Patents for C23F 1 - Etching metallic material by chemical means (16,062)
04/2008
04/22/2008US7361287 Method for etching structures in an etching body by means of a plasma
04/22/2008US7361285 Method for fabricating cliche and method for forming pattern using the same
04/22/2008US7361228 Showerheads for providing a gas to a substrate and apparatus
04/22/2008US7361016 Temperature control assembly for use in etching processes and an associated retrofit method
04/17/2008WO2008043876A1 Method for measuring the active koh concentration in a koh etching process
04/17/2008US20080090417 showerhead electrode assembly for processing semiconductor substrates; prevent aluminum fluoride formation; gas passages are positioned and sized such that they are misaligned at ambient temperature, concentric at high temperature; non-uniform shear stresses
04/17/2008US20080089774 A method and apparatus for semconductor processing
04/17/2008US20080087641 Components for a plasma processing apparatus
04/17/2008US20080087633 Method for forming a metal line and method for manufacturing display substrate having the metal line
04/17/2008US20080087381 Matching network characterization using variable impedance analysis
04/16/2008CN101164121A Plasma oxidation and removal of oxidized material
04/16/2008CN100382237C Vacuum treatment device
04/15/2008US7359177 Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
04/15/2008US7358192 Method and apparatus for in-situ film stack processing
04/15/2008US7357879 Cupric chloride solution and triazole compound; capable of forming an etching-inhibiting coating; nonuniform irregularities formed on the side wall of the circuit pattern by the etching improves the adhesion between the circuit pattern and an insulating resin layer covering the circuit pattern
04/15/2008US7357878 Etchant, and method for fabricating a thin film transistor subtrate including conductive wires using the etchant and the resulting structure
04/15/2008US7357874 Staggered vertical comb drive fabrication method
04/15/2008US7357873 Polymide thin film self-assembly process
04/15/2008US7357846 Substrate processing apparatus and substrate processing method
04/10/2008WO2007100933A3 Etch selectivity enhancement, deposition quality evaluation, structural modification and three-dimensional imaging using electron beam activated chemical etch
04/10/2008US20080083703 Method of plasma processing
04/10/2008US20080083701 Oxygen conditioning of plasma vessels
04/10/2008US20080083700 Method and Apparatus for Maximizing Cooling for Wafer Processing
04/10/2008US20080083697 Porous silicon composite structure as large filtration array
04/10/2008US20080083618 System and Methods for Determining an Analyte Concentration Incorporating a Hematocrit Correction
04/10/2008US20080083501 Substrate processing apparatus
04/09/2008EP1907596A1 Injection type plasma treatment apparatus and method
04/09/2008CN101160207A Metal layered product, its manufacturing method and application
04/09/2008CN101158052A Alkaline etching solution for semiconductor wafer and alkaline etching method
04/09/2008CN100380628C Production method of semiconductor component and plug
04/09/2008CN100380605C Plasma processing apparatus and method, and electrode plate for plasma processing apparatus
04/09/2008CN100380599C 抛光装置及基片处理装置 A polishing apparatus and a substrate processing apparatus
04/09/2008CN100380564C Method and apparatus for an improved baffle plate in a plasma processing system
04/09/2008CN100379898C Solution for etching copper surfaces and method of depositing metal on copper surfaces
04/09/2008CN100379897C Mask forming method, mask forming functional layer, dry etching method, and method of manufacturing an information recording medium
04/09/2008CN100379896C Chemical processing method and chemical processing device
04/08/2008US7354869 Substrate processing method, substrate processing apparatus, and semiconductor device manufacturing method
04/08/2008US7354523 Methods for sidewall etching and etching during filling of a trench
04/08/2008US7354500 Mask and apparatus using it to prepare sample by ion milling
04/08/2008US7353863 Method of surface treating aluminum alloy base body of heat exchanger and heat exchanger produced by the method
04/03/2008US20080081173 Aluminum substrate is subjected to a first film dissolution treatment for dissolving up to 20 wt % of the anodized layer, followed by an anodizing treatment and a second film dissolution treatment
04/03/2008US20080079777 Droplet Ejection Head And Method Of Manufacturing The Same
04/03/2008US20080078746 Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium
04/03/2008US20080078745 RF Coil Plasma Generation
04/03/2008US20080078744 High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
04/03/2008US20080078743 Elevated temperature chemical oxide removal module and process
04/03/2008US20080078742 Method of preparing a sample for transmission electron microscopy
04/03/2008US20080078506 RF Coil Plasma Generation
04/03/2008US20080078504 Self-Calibrating Optical Emission Spectroscopy for Plasma Monitoring
04/02/2008CN101153395A Metal removing solution and metal removing method using the same
04/02/2008CN101153388A Plating liquid for electroless zinc plating for magnesium alloy
04/02/2008CN101152820A Technique for producing multicolor pattern on stainless steel surface
04/02/2008CN100378924C Plasma etching reactor
04/02/2008CN100378911C Process for titanium nitride removal
04/01/2008USH2212 Method and apparatus for producing an ion-ion plasma continuous in time
04/01/2008US7352266 Head electrode region for a reliable metal-to-metal contact micro-relay MEMS switch
04/01/2008US7351354 comprising orthoperiodic acid, hydrofluoric acid and water; for removing tungsten and forming a film on semiconductor substrate; free of sulfuric acid; demetallization
04/01/2008US7351353 Method for roughening copper surfaces for bonding to substrates
04/01/2008US7351349 Method and apparatus for real-time dynamic chemical analysis
04/01/2008US7351346 Non-photolithographic method for forming a wire grid polarizer for optical and infrared wavelengths
04/01/2008US7351321 Electroplating metal onto substrate in pattern corresponding to complement of conformable mask; forming multilayer, three-dimensional structure
04/01/2008US7351292 Assembly for processing substrates
04/01/2008US7351291 Semiconductor processing system
03/2008
03/27/2008US20080073321 Method of patterning an anti-reflective coating by partial etching
03/27/2008US20080073031 Method and apparatus for semiconductor processing
03/26/2008EP1901983A2 Load port module
03/26/2008CN101148765A Silicon chip etching method
03/26/2008CN101148764A Steel ring repairing technique
03/26/2008CN100377315C Silicon gate etching method
03/26/2008CN100377314C Method for removing residual polymer in polysilicon etching technology
03/26/2008CN100377308C Particle-removing process before semiconductor etching
03/26/2008CN100377301C Gas injection and diffusion system
03/26/2008CN100377300C Reaction chamber for semiconductor treatment
03/26/2008CN100376721C Chemical etching solution for molybdenum
03/20/2008WO2008033928A2 Electron beam enhanced surface wave plasma source
03/20/2008US20080070327 Plasma processing method and plasma processing apparatus
03/20/2008US20080069966 A protective film of oxides of aluminum and yttrium formed on an inner wall surface of the chamber and the internal exposed surfaces of the apparatus for processing semiconductor wafers; high-corrosion resistance and dielectric property; etching resistance; spraying yttrium, aluminum and amorphous garnet
03/20/2008US20080067148 Peracetic acid; stabilizer; organic acid of acetic, citric, oxalic, and/or tartaric acid; inorganic acid of sulfuric, nitric, hydrochloric, and/or phosphoric acid; salt and water; thin film transistor liquid crystal displays; one step; damage prevention; eliminates Galvanic effect
03/20/2008US20080067147 Processing apparatus and processing method
03/20/2008US20080066867 Semiconductor etching apparatus
03/20/2008US20080066866 Method and apparatus for reducing plasma-induced damage in a semiconductor device
03/20/2008US20080066865 Device and process for liquid treatment of wafer-shaped articles
03/20/2008US20080066862 Substrate holding apparatus and substrate polishing apparatus
03/20/2008US20080066861 Plasma processing chamber with an apparatus for measuring set of electrical characteristics in a plasma
03/20/2008US20080066860 Ta-TaN SELECTIVE REMOVAL PROCESS FOR INTEGRATED DEVICE FABRICATION
03/20/2008US20080066779 Removing the palladium metal layer using a cerium (IV) nitrate salt
03/20/2008US20080066679 Processing system and plasma generation device
03/19/2008EP1899111A2 Integrated chemical mechanical polishing composition and process for single platen processing
03/19/2008CN101145522A Gas injection device
03/19/2008CN101144181A Film formation apparatus for semiconductor process and method for using the same
03/19/2008CN101144163A Air separation device
03/18/2008US7344998 Wafer recovering method, wafer, and fabrication method
03/18/2008US7344988 Alumina abrasive for chemical mechanical polishing
03/18/2008CA2460520C Metal-containing web processed with a continuous etch process
03/13/2008WO2008031031A2 Cartesian cluster tool configuration for lithography type processes
03/13/2008US20080061033 processing method of a polymer product is provided. This method first supplies a gas to an atmospheric pressure plasma machine to generate an ionized gas. Then, bombard the ionized gas to the surface of the polymer product to create a surface reaction. Afterwards, a dying treatment or electroplating
03/13/2008US20080061032 Electrostatic chuck cleaning during semiconductor substrate processing
03/13/2008US20080061030 Methods for patterning indium tin oxide films
03/13/2008US20080061026 Gimbal-less micro-electro-mechanical-system tip-tilt and tip-tilt-piston actuators and a method for forming the same
03/13/2008US20080060760 Radial line slot antenna having a conductive layer
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