Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
06/1997
06/10/1997US5637351 Low temperature vacuum deposition
06/10/1997US5637180 Plasma processing method and plasma generator
06/10/1997US5637153 Supplying cleaning gas containing chlorine trifluoride to interior of reaction tube and exhaust piping system to remove film deposited on inner wall surface by etching
06/10/1997US5637145 Method of vapor phase epitaxial growth
06/10/1997US5636963 Method of handling wafers in a vacuum processing apparatus
06/05/1997WO1997020340A1 Method and device for treating semiconductor with treating gas while substrate is heated
06/05/1997WO1997020083A1 Coated cutting insert and method of making it
06/05/1997WO1997020082A1 Coated turning insert and method of making it
06/05/1997WO1997020081A1 Coated milling insert and method of making it
06/05/1997WO1997019778A2 Cutting tool, process for coating a cutting tool, and use thereof
06/05/1997DE19615740A1 Diamond-coated composite structure for electronics
06/04/1997EP0777262A1 Wafer heater assembly
06/04/1997EP0776991A1 Plasma annealing of thin films
06/04/1997EP0776990A1 Substrate support apparatus for a deposition chamber
06/04/1997EP0776989A1 Method of making a coloured coating
06/04/1997EP0776988A2 Temperature regulation apparatus
06/04/1997EP0554246B1 Cvd of metal films from beta-diketonate complexes
06/04/1997CN1035071C Method of pretreating metallic works
06/03/1997US5635287 Pane provided with a functional film
06/03/1997US5635258 Method of forming a boron-doped diamond film by chemical vapor deposition
06/03/1997US5635256 Passivating and removing via gas-assisted vaporization the cobalt binder matrix from the surface of a tungsten carbide cutting tool prior to chemical vapor deposition of diamond;wear resistance; toughness; hardness
06/03/1997US5635254 Plasma spraying method for forming diamond and diamond-like coatings
06/03/1997US5635247 Depositing alumina coating on substrate, wet blasting, heat treating to convert to alpha-alumina
06/03/1997US5635245 Vapor deposition of an optically transparent interlayer which bonds to glass substrate followed by deposition of an outer diamond-like carbon layer
06/03/1997US5635244 Clamping a wafer edge using a clamp having an overhang separated from the wafer surface a distance such as to prevent contacting the deposited material
06/03/1997US5635243 Forming a coating on a substrate by radiating to immobilize, diffuse, vaporize and react constiuent elements or alter its physical structure (carbide to diamond on steel); cutting tool inserts
06/03/1997US5635242 Method and apparatus for preventing rupture and contamination of an ultra-clean APCVD reactor during shutdown
06/03/1997US5635241 Method for producing thin film and apparatus therefor
06/03/1997US5635144 Generating plasma within vessel made of material which becomes part of thin film, introducing gas which reacts with vessel to produce reaction product that reacts at surface to form thin film
06/03/1997US5634973 Semiconductor having substrate selectively coated with epitaxial layer patterned by masking with group iiib oxide layer wherein epitaxial growth does not occur on mask
06/03/1997US5634370 Composite diamond wire die
06/03/1997US5634266 Method of making a dielectric chuck
05/1997
05/28/1997EP0776037A2 Low temperature integrated metallization process and apparatus
05/28/1997DE19543748A1 Schneidwerkzeug, Verfahren zur Beschichtung eines Schneidwerkzeuges und Verwendung des Schneidwerkzeuges Cutter method for coating a cutting tool and use of the cutting tool
05/27/1997US5633211 Semiconductor device and process
05/27/1997US5633088 Diamond film and solid particle composite structure and methods for fabricating same
05/27/1997US5633087 Synthetic diamond wear component and method
05/27/1997US5633073 Heating until eutectic forms between conductive connector and metal layer to form an electrical connection
05/27/1997US5633036 Heating silicon substrate having silicon dioxide regions, forming nuclei from silicon source gas, converting to titanium silicide, etching to remove, growing layer of silicide on silicon from titanium and silicon source gases
05/27/1997US5632910 Multilayer resist pattern forming method
05/27/1997US5632879 Process for forming inorganic skin film
05/27/1997US5632873 Two piece anti-stick clamp ring
05/27/1997US5632868 Providing feed gas of oxygen supplemented with carbon dioxide, carbon monoxide or mixtures, applying voltage to produce ozone not contaminated with chromium compounds
05/27/1997US5632821 Post treatment method for in-situ cleaning
05/27/1997US5632820 Thermal treatment furnace in a system for manufacturing semiconductors
05/27/1997US5632797 Method of providing vaporized halide-free, silicon-containing compounds
05/22/1997WO1997018583A1 VERY THIN PECVD SiO2 FOR RESISTOR PROTECTION IN 0.5 MICRON AND 0.35 MICRON TECHNOLOGIES
05/22/1997WO1997018344A1 Surface treatment method and device therefor
05/22/1997WO1997018343A1 Method and device for sterilising, deodorising and protecting the inner surfaces of containers and tubes
05/21/1997EP0774778A2 Plasma etch with trifluoroacetic acid and derivatives
05/21/1997EP0774533A1 Method for depositing Si-O containing coatings
05/21/1997EP0774532A2 Process for the production of a diamond layer with homogensed thickness profile, diamond windows and membranes thus produced
05/21/1997EP0650465A4 Conversion of fullerenes to diamond.
05/21/1997EP0633997A4 A rapid thermal processing apparatus for processing semiconductor wafers.
05/21/1997EP0411079B1 Method for the deposition of at least one thickness of at least one decorative material to an object, and decorative object obtained by such method
05/21/1997CN1150461A Carbon-coated barrier film with increased concentration of tetrahedral equal carbon
05/21/1997CN1150240A Gas recovery unit
05/20/1997US5631496 Covering layer of boron-doped, amorphous hydrogenous carbon
05/20/1997US5631174 Preventing the formation of stringers causing short circuiting
05/20/1997US5631046 Improved adhesion of interconnect layers
05/20/1997US5630881 Thin-film forming apparatus with magnetic bearings and a non-contact seal and drive
05/20/1997US5630878 Liquid material-vaporizing and supplying apparatus
05/20/1997CA2120092C Triangular deposition chamber for a vapor deposition system
05/14/1997EP0773167A1 Carbon film-coated plastic container manufacturing apparatus and method
05/14/1997EP0773166A1 Carbon film-coated plastic container
05/14/1997EP0772875A1 Process for manufacturing optical data storage disk stamper
05/14/1997EP0772699A1 Diamond-phase carbon tubes and cvd process for their production
05/14/1997EP0670055B1 Method of deposition
05/14/1997EP0667043B1 Process for sealing high-temperature fuel cells and fuel cells sealed according to this process
05/14/1997EP0568696B1 PRODUCTION OF CLEAN, WELL-ORDERED CdTe SURFACES USING LASER ABLATION
05/14/1997CN1149761A Crystal wafer temmperature on-site controller for single wafer tool
05/13/1997US5629267 Superconducting element having an intermediate layer with multiple fluorite blocks
05/13/1997US5629245 Making film by forming on substrate with uneven upper surface a silicon oxide or nitride layer by chemical vapor deposition with carbon-free silicon material, forming second silicon oxide layer by plasma cvd with organic silane
05/13/1997US5629229 Metalorganic chemical vapor deposition of (Ba1-x Srx)RuO3 /(Ba1-x Srx)TIO3 /(Ba1-x Srx)TiO3 /(Ba1- Srx)RuO3 capacitors for high dielectric materials
05/13/1997US5629086 Substrate is stainless steel, nickel, aluminum or alloy of ni or al; intermediate layer is mainly composed of carbon, ruthenium, silicon or germanium or is layer of ru, si or ge mixed with carbon, nitrogen and/or oxygen with gradient
05/13/1997US5629054 Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
05/13/1997US5629053 Method for manufacturing microcrystalline cubic boron-nitride-layers
05/13/1997US5629043 Silicon nitride film formation method
05/13/1997US5628920 Organic layer for subsequent coating with a cover layer which is harder than the organic layer and process for surface treatment of an organic layer
05/13/1997US5628881 High temperature reaction method
05/13/1997US5628869 Plasma enhanced chemical vapor reactor with shaped electrodes
05/13/1997US5628839 Components of apparatus for film making and method for manufacturing the same
05/13/1997US5628829 Method and apparatus for low temperature deposition of CVD and PECVD films
05/13/1997US5628828 Processing method and equipment for processing a semiconductor device having holder/carrier with flattened surface
05/13/1997US5628824 Efficiency
05/09/1997WO1997016692A1 Modification of metal surfaces
05/09/1997WO1997016580A1 Method of forming diamond-like carbon film (dlc), dlc film formed thereby, use of the same, field emitter array and field emitter cathodes
05/09/1997WO1996041897A3 Durable plasma treatment apparatus and method
05/07/1997EP0771887A1 Gas recovery unit
05/07/1997EP0771886A1 Method for depositing amorphous SiNC coatings
05/07/1997EP0771469A1 Method of and apparatus for microwave-plasma production
05/07/1997DE19645033A1 Verfahren zur Bildung eines Metalldrahtes A method of forming a metal wire
05/07/1997DE19540543A1 Apparatus for coating a substrate by means of a chemical vapour deposition process
05/06/1997US5627435 Hollow cathode array and method of cleaning sheet stock therewith
05/06/1997US5627089 Atmosphere pressure chemical vapor deposition; forming gate electrode having sloped sides
05/06/1997US5626963 Cutting tool
05/06/1997US5626924 Method of forming oxide film
05/06/1997US5626922 Plasma processing method
05/06/1997US5626908 Method for producing silicon nitride based member coated with film of diamond
05/06/1997US5626775 Plasma etch with trifluoroacetic acid and derivatives