Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/1998
12/02/1998CN1200381A Method and equipment for metallising plastic container or glass container
12/01/1998US5844225 Abrasion wear resistant coated substrate product
12/01/1998US5844205 Heated substrate support structure
12/01/1998US5844195 Remote plasma source
12/01/1998US5843838 Modified clean recipe to suppress formation of BPSG bubble
12/01/1998US5843829 Method for fabricating a semiconductor device including a step for forming an amorphous silicon layer followed by a crystallization thereof
12/01/1998US5843571 Amorphous hard carbon film
12/01/1998US5843533 CVD method of forming self-lubricating composites
12/01/1998US5843520 Substrate clamp design for minimizing substrate to clamp sticking during thermal processing of thermally flowable layers
12/01/1998US5843518 Method for making a tantala/silica interference using heat treatment
12/01/1998US5843239 Two-step process for cleaning a substrate processing chamber
12/01/1998US5843234 Method and apparatus for aiming a barrel reactor nozzle
12/01/1998US5843233 Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus
11/1998
11/26/1998WO1998053484A1 Processing apparatus
11/26/1998WO1998053115A1 Packaging material
11/25/1998EP0880166A2 Method and apparatus for depositing an etch stop layer
11/25/1998EP0880163A2 Plasma processing method and apparatus
11/25/1998EP0880073A1 Diamond films suitable for x-ray lithography and their manufacture
11/25/1998EP0879899A1 Packaging material
11/25/1998EP0879897A1 Process for continuous annealing of metal substrates
11/25/1998EP0879802A2 Coating method
11/25/1998EP0879303A1 Device and process for coating substrates
11/25/1998EP0788727B1 Process for manufacturing electrical circuit bases
11/25/1998EP0779941A4 Etchant for aluminium alloys
11/24/1998US5840897 Metal complex source reagents for chemical vapor deposition
11/24/1998US5840631 Forming wiring layer on substrate, adding catalyst gas, adding organosilicon compound as source gas for silicon oxide insulating film, forming wiring layer
11/24/1998US5840628 Two step process of mixing titanium-based gas, nitrogen-based gas and hydrogen in first step of low mixing ratio and second step of increased mixing ratio
11/24/1998US5840427 A diamond-like carbon inorganic coatings over a silicon film; protective coatings, stress resistance
11/24/1998US5840426 Method for fluorination of diamond surfaces and associated product
11/24/1998US5840374 Method of forming a SiO2 passivation film on a plastic substrate
11/24/1998US5840373 Method of growing films by flame synthesis using a stagnation-flow reactor
11/24/1998US5840367 Process for preparing a two phase HFB2 -SIB4 material
11/24/1998US5840366 Method of forming thin film
11/24/1998US5840125 Rapid thermal heating apparatus including a substrate support and an external drive to rotate the same
11/24/1998US5840124 For mounting wafers in epitaxial reactor
11/24/1998US5840110 Metal alkoxycarboxylate-based liquids
11/24/1998CA2051214C Vacuum film forming apparatus
11/19/1998WO1998051981A1 Glass fiber reinforced ceramic molding compositions
11/19/1998WO1998051844A1 Co-rotating edge ring extension for use in a semiconductor processing chamber
11/19/1998WO1998051843A1 A method and apparatus for achieving temperature uniformity of a substrate
11/19/1998WO1998051839A1 Processing insert, and production of same
11/19/1998WO1998051838A1 Low resistivity w using b2h¿6?
11/19/1998WO1998051837A2 Chemical vapour deposition precursors
11/19/1998WO1998051632A1 Method for depositing a coating layer on an optical fibre while it is being drawn and device for its implementation
11/19/1998WO1998037254A3 Thin films
11/18/1998EP0878837A2 Ferroelectric thin film comprising a bufferlayer and a Bismuth layered compound
11/18/1998EP0878823A2 Plasma-enhanced chemical vapor deposition apparatus and method M
11/18/1998EP0878560A2 Vapor generating method and apparatus using same
11/18/1998EP0878558A1 Coated material and method of manufacturing the same
11/18/1998EP0878268A2 Polishing apparatus and method for hard material-coated wafer
11/18/1998CN1199410A Coated plastic substrate
11/17/1998US5838528 For retaining a wafer in a processing chamber
11/17/1998US5837607 Method of making a laser synthesized ceramic electronic devices and circuits
11/17/1998US5837357 Eliminating head smear
11/17/1998US5837332 Semiconductors for electronic and magnetic apparatus
11/17/1998US5837331 Vapor deposition in vacuum enclosure by ionizing the precursor, forming gaseous plasma having ion impinging energy, modulating in predetermined manner
11/17/1998US5837322 Deposition of polycrystalline diamond film on zinc sulfide substrate having nitride interlayer
11/17/1998US5837321 Volatile organic lanthanide compounds and methods for the preparation of lanthanide-containing layered materials form these compounds
11/17/1998US5837320 Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands
11/17/1998US5837081 Method for making a carbon-carbon composite
11/17/1998US5837059 Automatic positive pressure seal access door
11/17/1998US5837058 High temperature susceptor
11/12/1998WO1998050606A1 Vertical furnace for the treatment of semiconductor substrates
11/12/1998WO1998032893A3 Wafer support system
11/12/1998DE19719195A1 Schneideinsatz zum Zerspanen und Verfahren zur Herstellung dieses Schneideinsatzes A cutting insert for chip removal and methods for making this cutting insert
11/12/1998DE19718517A1 Microelectronic component with diamond layer
11/11/1998EP0877421A2 Sputter deposition and annealing of copper alloy metallization M
11/11/1998EP0877416A1 Integrated structure comprising a polysilicon element with large grain size
11/11/1998EP0877415A2 Method and system for the deposition of a multi-layer film
11/11/1998EP0877410A1 Deposition chamber and method for depositing low dielectric constant films
11/11/1998EP0877098A1 Method and system for depositing films
11/11/1998EP0876821A2 A process for improving start up and steady rate friction of soft/compliant polyurethanes
11/11/1998EP0876528A1 Capacitively coupled rf diamond-like-carbon reactor
11/11/1998EP0876516A1 Process for producing wear-resistant boride layers on metal material surfaces
11/11/1998CN1198589A Process equipment for making large scale integrated circuit
11/11/1998CN1198480A Plasma intensified chemical vapour deposition device and method for making said deposition
11/10/1998US5835678 Liquid vaporizer system and method
11/10/1998US5835677 Liquid vaporizer system and method
11/10/1998US5834803 Oriented ferroelectric thin film element and process for preparing the same
11/10/1998US5834372 Pretreatment of semiconductor substrate
11/10/1998US5834371 Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof
11/10/1998US5834068 Heating a wafer than cooling with a high thermal conductive gas, adjusting flow rate to stabilize the temperature and reduce surface temperature variations
11/10/1998US5834061 Al2 O3 coated cutting tool preferably for near net shape machining
11/10/1998US5834060 High dielectric constant thin film structure method for forming high dielectric constant thin film and apparatus for forming high dielectric contact thin film
11/10/1998US5834059 Semiconductors
11/10/1998US5834058 Vapor deposited amidine complexes to form semiconductor materials; the complexes having thermal stability in vapor phase and good stability at room temperature
11/10/1998US5833888 Weeping weir gas/liquid interface structure
11/10/1998US5833754 Deposition apparatus for growing a material with reduced hazard
11/10/1998US5833753 Reactor having an array of heating filaments and a filament force regulator
11/10/1998US5833752 Manifold system
11/05/1998WO1998049366A1 Fluidized bed reactor to deposit a material on a surface by chemical vapour deposition, and methods of forming a coated substrate therewith
11/05/1998DE19718518A1 Diamond deposition by low temperature plasma CVD
11/04/1998EP0875919A2 Self-cleaning focus ring
11/04/1998EP0875595A1 Process-gas supply apparatus
11/04/1998EP0874919A1 Coated turning insert and method of making it
11/04/1998EP0795042B1 Process for coating with an oxide layer a passivable metal or alloy substrate
11/04/1998EP0784714B1 Low surface energy coatings
11/04/1998EP0646285B1 Semiconductor wafer processing method and apparatus with heat and gas flow control
11/04/1998CN1197848A Vacuum film growth apparatus
11/04/1998CN1197629A Surface treating method
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