Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
03/1999
03/16/1999US5883015 Method for using oxygen plasma treatment on a dielectric layer
03/16/1999US5882975 Method of fabricating salicide-structure semiconductor device
03/16/1999US5882826 The laminated film is obtained by continuously forming a sicn film on one of or each of sides of a sic film.
03/16/1999US5882807 Heat treatment silicon carbide, vapor deposition and impregnation
03/16/1999US5882805 Infrared detectors, solar cells and other advanced opto-electronic devices
03/16/1999US5882740 Cathodoluminescence, vapor deposition a diamond
03/16/1999US5882730 Method for the preparation of a double-coated body of boron nitride
03/16/1999US5882725 Parylene deposition chamber including eccentric part tumbler
03/16/1999US5882424 Plasma cleaning of a CVD or etch reactor using a low or mixed frequency excitation field
03/16/1999US5882419 Chemical vapor deposition chamber
03/16/1999US5882418 Jig for use in CVD and method of manufacturing jig for use in CVD
03/16/1999US5882417 Apparatus for preventing deposition on frontside peripheral region and edge of wafer in chemical vapor deposition apparatus
03/16/1999US5882416 Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer
03/16/1999US5882414 Method and apparatus for self-cleaning a blocker plate
03/16/1999US5882413 Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer
03/16/1999US5882411 Faceplate thermal choke in a CVD plasma reactor
03/16/1999US5882410 Vapor deposition, barium stronium titanate film of higher dielectric constant and less leakage current
03/16/1999US5882366 Alternating wash/dry water scrubber entry
03/16/1999US5882171 Transport and transfer apparatus
03/11/1999WO1999012196A1 Control of semiconductor device isolation properties through incorporation of fluorine in peteos films
03/11/1999WO1999011839A1 Method and apparatus for monitoring generation of liquid chemical vapor
03/11/1999WO1999011838A1 Vapor deposition apparatus
03/11/1999WO1999011573A1 Method for fabricating silicon oxynitride
03/11/1999DE19836331A1 Multi-mode gas system control method
03/11/1999DE19810015A1 Strangpreßwerkzeug, Verfahren zu dessen Herstellung sowie seine Verwendung Extrusion die, a process for its preparation and its use
03/11/1999CA2297329A1 Method for fabricating silicon oxynitride
03/10/1999EP0900860A2 Coated cemented carbide endmill having hard-materials-coated-layers excellent in adhesion
03/10/1999EP0900859A2 Process for deposition of a dielectric Ta2O5 layer
03/10/1999EP0900287A1 Substrate with a superhard coating containing boron and nitrogen and method of making the same
03/10/1999EP0725767B1 Vapor phase chemical infiltration process of a material into a porous substrate at controlled surface temperature
03/09/1999US5879970 Process of growing polycrystalline silicon-germanium alloy having large silicon content
03/09/1999US5879811 Oxide thin film having quartz crystal structure
03/09/1999US5879775 Hard, transparent diamond-like carbon protective coating
03/09/1999US5879763 Enhancing the abrasion resistance of the inner surface of a cylinder
03/09/1999US5879744 Method of manufacturing aerogel composites
03/09/1999US5879741 Apparatus for forming film over flexible substrate by chemical vapor deposition including means for curving substrate during deposition to cancel internal stresses and reduce warpage
03/09/1999US5879574 Apparatus for fabricating an intergrated circuit device where a cleaning gas reacts with unwanted residue to produce clean gas reactants
03/09/1999US5879573 Method for optimizing a gap for plasma processing
03/09/1999US5879467 Cycling vacuum system between two pressures, pumping down to lower pressure
03/09/1999US5879461 Metered gas control in a substrate processing apparatus
03/09/1999US5879459 Vertically-stacked process reactor and cluster tool system for atomic layer deposition
03/09/1999US5879415 Detecting by an oxygen densitometer to control an inert gas flow rate and an oxygen flow rate
03/09/1999US5878793 Refillable ampule and method re same
03/04/1999WO1999010913A1 An apparatus and method for allowing a stable power transmission into a plasma processing chamber
03/04/1999WO1999010560A1 Jet plasma process and apparatus for deposition of coatings and coatings thus obtained
03/04/1999WO1999010559A1 Deposition rate control on wafers with varying characteristics
03/04/1999WO1999010558A1 Vertically-stacked process reactor and cluster tool system for atomic layer deposition
03/04/1999DE19839996A1 Modification of antifriction property of polymer surface
03/04/1999DE19825983A1 Composite gradient layer by CVD containing diamond and carbide phases
03/04/1999DE19748483C1 High temperature superconductor material structure for a current limiting device
03/04/1999DE19737748A1 Plasma treated polymer layer for corrosion protection of ferrous alloys
03/04/1999CA2298697A1 Jet plasma process and apparatus for deposition of coatings and coatings thus obtained
03/03/1999EP0899779A2 Method for fabricating thermally stable contacts
03/03/1999EP0899359A1 CVD process for producing a multi-layer coating based on Ti-Al-N
03/03/1999EP0899358A2 Silicon carbide fabrication
03/03/1999EP0898504A1 Abrasive body
03/02/1999US5877095 Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen
03/02/1999US5877087 Low temperature integrated metallization process and apparatus
03/02/1999US5876850 Coating for carbon-carbon composites and method for producing same
03/02/1999US5876838 Semiconductor integrated circuit processing wafer having a PECVD material layer of improved thickness uniformity
03/02/1999US5876808 Titanium nitride
03/02/1999US5876798 Method of fluorinated silicon oxide film deposition
03/02/1999US5876797 Silicon chemical vapor deposition
03/02/1999US5876793 Fine powders and method for manufacturing
03/02/1999US5876683 Combustion flame synthesis of nanophase materials
03/02/1999US5876504 Process for producing oxide thin films and chemical vapor deposition apparatus used therefor
03/02/1999US5876503 Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions
02/1999
02/25/1999WO1999009586A2 Method for forming titanium silicide and titanium by cvd
02/25/1999WO1999009576A1 A carbon film for field emission devices
02/25/1999WO1999009233A1 Gas distribution system for a process reactor and method for processing semiconductor substrates
02/25/1999WO1999009223A1 Method for dissociating metals or dissociating metal compounds
02/25/1999WO1999008805A1 Plasma cleaning and etching methods using non-global-warming compounds
02/25/1999DE19738098C1 Hard material coating includes a textured titanium carbonitride layer
02/25/1999CA2297678A1 Method for dissociating metals or dissociating metal compounds
02/24/1999EP0898303A2 Electric isolating thin film system with defined residual conduction
02/24/1999EP0898302A1 Reactor and method of processing a semiconductor substrate
02/24/1999EP0897997A1 Composite material
02/24/1999EP0897996A1 Aluminide/MCrAlY coating system
02/24/1999EP0897925A2 A volatile organometallic compound containing a divalent metal and a group 13 metal, process for preparing same, and process for preparing a heterometallic oxide film using same
02/24/1999EP0897328A1 Abrasive body
02/23/1999US5875416 Temperature adjusting method and apparatus therefor using at least two temperature sensors and a correction value
02/23/1999US5874705 Method of and apparatus for microwave-plasma production
02/23/1999US5874368 Silicon nitride from bis(tertiarybutylamino)silane
02/23/1999US5874364 Forming ruthenium or ruthenium oxide film by vapor deposition of ruthenium, 2,5-dimethyl-3,5-heptanedione complex
02/23/1999US5874350 Separately activating gaseous reactants by high energy discharge prior to reacting together in mixing zone and vapor deposition onto heated substrate
02/23/1999US5874131 CVD method for forming metal-containing films
02/23/1999US5874130 Wafer and method of producing a wafer
02/23/1999US5874129 Low temperature, high pressure silicon deposition method
02/23/1999US5874014 Durable plasma treatment apparatus and method
02/23/1999US5873983 Coating flowable material onto clamped substrate with some excess residue covering clamp, hot melting coating while clamped substrate is held face down to so that excess residue on clamp does not flow onto substrate coating layer
02/23/1999US5873942 Apparatus and method for low pressure chemical vapor deposition using multiple chambers and vacuum pumps
02/18/1999WO1999008311A1 Ceramic-coated heating assembly for high temperature processing chamber
02/18/1999WO1999007925A1 Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
02/18/1999WO1999007924A1 Apparatus and method for the in-situ generation of dopants
02/18/1999WO1999007915A1 Mini-batch process chamber
02/18/1999WO1998051837A3 Chemical vapour deposition precursors
02/18/1999DE19735399A1 Gas piping system especially for a horizontal or vertical wafer treatment furnace
02/17/1999EP0897024A1 Process for epitaxy on a silicon substrate containing zones highly doped with arsenic
02/17/1999EP0896640A1 Diamond-like nanocomposite compositions
02/17/1999CN1208247A Method of forming fluorine-added insulating film