Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
05/1999
05/26/1999EP0918100A1 Method and apparatus for producing homoepitaxial diamond thin film
05/26/1999EP0917596A1 Method of manufacturing a semiconductor device and a device for applying such a method
05/26/1999EP0917494A1 Systems and methods for the combinatorial synthesis of novel materials
05/26/1999CN1217569A Formation method of aluminium film for wiring
05/25/1999US5907077 Method and apparatus for treatment of freon gas
05/25/1999US5906895 Thermal barrier coating member and method of producing the same
05/25/1999US5906866 High speed hydrogen reduction of tungsten hexafluoride without the use of silane to form a tungsten film
05/25/1999US5906861 Heating the substrate, supplying a mixture of the gases tetramethylcyclotetrasiloxane, trimethylborate, trimethylphosphite, and oxygen to vapor deposit an inorganic coatings
05/25/1999US5906688 Heating to oxidize stainless steel surface preteated by purging surface moisture using anhydrous inert gas
05/25/1999US5906683 Lid assembly for semiconductor processing chamber
05/25/1999US5906680 Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
05/25/1999US5906670 Spraying toward substrate aerosol droplets of metal salt dissolved in volatile solvent, desolventizing and reacting droplets while airborne with gas phase reagent to form a metal or metal compound to be coated onto substrate
05/20/1999WO1999025012A1 ELIMINATION OF THE TITANIUM NITRIDE FILM DEPOSITION IN TUNGSTEN PLUG TECHNOLOGY USING PE-CVD-Ti AND IN-SITU PLASMA NITRIDATION
05/20/1999WO1999025006A2 Electrostatic chuck having improved gas conduits
05/20/1999WO1999024637A1 Method for annealing an amorphous film using microwave energy
05/20/1999WO1999024636A1 Method for applying a diamond layer on substrates made of sintered metallic carbide
05/20/1999WO1999024635A1 Method of fabricating iridium-based materials and structures on substrates, and iridium source reagents therefor
05/20/1999CA2309590A1 Method for applying a diamond layer on substrates made of sintered metallic carbide
05/19/1999EP0916745A1 Two piece diamond deposition mandrel having graphite ring
05/19/1999EP0916635A2 Ceramic coatings containing layered porosity
05/19/1999EP0730670B1 Coated body, its method of production and its use
05/19/1999CN1217031A Surface alloyed high temp. alloys
05/18/1999US5904958 Coating a substrate, condensation and adjustment of apertures vacuum chamber;
05/18/1999US5904957 Vapour phase chemical infiltration process for densifying porous substrates disposed in annular stacks
05/18/1999US5904952 Oxidation of organosilicon compound with oxygen in helium; magnetically confined; controlling gas flow
05/18/1999US5904872 Heating plate formed of silica for semiconductor vapor deposition process
05/18/1999US5904776 Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
05/18/1999US5904771 Stable evaporation rate
05/18/1999US5904769 Epitaxial growth method
05/18/1999US5904757 Trap apparatus
05/18/1999US5904573 PE-TEOS process
05/18/1999US5904567 Layer member forming method
05/18/1999US5904553 Fabrication method for a gate quality oxide-compound semiconductor structure
05/18/1999US5904491 Planar waveguides
05/14/1999WO1999023707A1 CONSTRUCTION WITH HIGH Tc SUPERCONDUCTOR MATERIAL AND METHOD FOR PRODUCING SAID CONSTRUCTION
05/14/1999WO1999023698A1 Titanium nitride contact plug formation
05/14/1999WO1999023695A1 Method of plasma processing
05/14/1999WO1999023691A2 Improved low mass wafer support system
05/14/1999WO1999023276A1 Long life high temperature process chamber
05/14/1999WO1999023275A1 Cemented carbide body with high wear resistance and extra tough behaviour
05/14/1999WO1999023273A1 Coating method and device
05/14/1999WO1999023042A1 Improvements in coating glass
05/14/1999WO1999022878A2 Method for corrosion-resistant coating of metal substrates by means of plasma polymerisation
05/14/1999CA2308480A1 Construction with high tc superconductor material and process for producing the construction
05/12/1999EP0914497A1 Hard graphite-like material bonded by diamond-like framework
05/12/1999EP0914496A1 Microwave applicator for an electron cyclotron resonance plasma source
05/12/1999EP0914486A1 Coating substrate
05/12/1999EP0843747B1 Treatment of cemented carbide substrate to receive a diamond film by CVD
05/12/1999EP0693975B1 Hollow containers with inert or impermeable inner surface through plasma-assisted surface reaction or on-surface polymerization
05/12/1999DE19755902C1 Plasma surface treatment process involves hollow cathode self-cleaning
05/11/1999US5903106 Plasma generating apparatus having an electrostatic shield
05/11/1999US5902675 Diamond film and solid diamond particle composite compositions
05/11/1999US5902671 Coated with refractory alumina layer
05/11/1999US5902651 Providing a gaseous tetrakisdimethylamidotitanium precursor within reactor, exposing the gaseous tetrakisdimethylamidotitanium precursor to light, causing titanium to be deposited
05/11/1999US5902650 Depositing on substrate amorphous silicon based film having predetermined resistivity by chemical vapor deposition using gas mixture comprising silane, hydrogen, phosphine, nitrogen-containing gas with adjusted flow rate
05/11/1999US5902649 Vacuum treatment system for homogeneous workpiece processing
05/11/1999US5902640 Method of improving field emission characteristics of diamond thin films
05/11/1999US5902639 Liquid delivery vaporization of a bismuth amide source reagent to form a bismuth-containing source vapor, and deposition on the substrate of bismuth from the bismuth-containing source vapor to form the bismuth layerbismuth-containing material
05/11/1999US5902638 Method for producing spallation-resistant protective layer on high performance alloys
05/11/1999US5902563 The energies of particles are limited by selecting frequency, pressure, magnetic field and electric bias to the deposition region and chemical vapor depositing the diamond from the plasma source
05/11/1999US5902494 Method and apparatus for reducing particle generation by limiting DC bias spike
05/11/1999US5902407 Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
05/11/1999US5902406 Low pressure CVD system
05/11/1999US5902405 Plasma processing apparatus
05/11/1999US5902403 Method and apparatus for cleaning a chamber
05/11/1999US5902369 Carbon coated metallic mold for making a glass plate
05/11/1999US5902103 Vertical furnace of a semiconductor manufacturing apparatus and a boat cover thereof
05/06/1999WO1999022165A1 Gas panel
05/06/1999WO1999022043A1 New deposition systems and processes for transport polymerization and chemical vapor deposition
05/06/1999WO1999021932A1 Low dielectric constant materials with improved thermal and mechanical properties
05/06/1999WO1999021924A1 Precursors for making low dielectric constant materials with improved thermal stability
05/06/1999WO1999021706A1 Low dielectric constant materials prepared from photon or plasma assisted cvd
05/06/1999WO1999014787A3 Method for producing plasma by microwave irradiation
05/06/1999EP0913496A1 High-temperature spray coated member and method of production thereof
05/06/1999EP0912775A1 Process for coating the interior wall of a container
05/06/1999EP0912460A1 Densification of a porous structure (iii)
05/06/1999EP0912459A1 Densification of a porous structure (i)
05/06/1999EP0912279A1 Diamond coated cutting member and method of making the same
05/06/1999EP0787221A4 Platinum aluminide cvd coating method
05/06/1999DE19748240A1 Verfahren zur korrosionsfesten Beschichtung von Metallsubstraten mittels Plasmapolymerisation A process for the corrosion-resistant coating of metal substrates by means of plasma
05/06/1999DE19747813A1 Element used in manufacture of electronic components
05/06/1999DE19727432A1 Growth substrate holder has a heat conductive screen for providing uniform temperature distribution
05/06/1999CA2307663A1 Gas panel
05/05/1999CN1216015A Abrasive body
05/05/1999CN1215764A Chemical vapor deposition apparatus for manufacturing semiconductor devices, its driving method
05/04/1999US5901271 Process of evaporating a liquid in a cyclone evaporator
05/04/1999US5900699 Plasma generator with a shield interposing the antenna
05/04/1999US5900498 Single source metal imido-amido-amine precursors prepared by the reaction of a pentavalent or tetravalent metal halide with a primary amine or hydrazine
05/04/1999US5900297 Friction disk with an annular porous structure with a vapor deposited binding matrix; simultanious processing of large quantities of aircraft brake disks
05/04/1999US5900290 Method of making low-k fluorinated amorphous carbon dielectric
05/04/1999US5900289 Method of producing a colorating coating
05/04/1999US5900288 Method for improving substrate adhesion in fluoropolymer deposition processes
05/04/1999US5900285 Method of making a vessel having a wall surface having a barrier coating
05/04/1999US5900279 Processes for the chemical vapor deposition and solvent used for the processes
05/04/1999US5900161 Apparatus and method for detecting end point of post treatment
05/04/1999US5900105 Wafer transfer system and method of using the same
05/04/1999US5900103 Plasma treatment method and apparatus
05/04/1999US5900065 Apparatus for the plasma-chemical deposition of polycrystalline diamond
05/04/1999US5900064 Plasma process chamber
05/04/1999US5899720 Process of fabricating salicide structure from high-purity reproducible cobalt layer without sacrifice of leakage current and breakdown voltage of P-N junction
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