Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
09/1999
09/22/1999EP0943699A1 Load-lock device for transferring substrates in and out of a treatment chamber
09/22/1999EP0793736B1 Process for preparing micromechanical components having free-standing microstructures or membranes
09/22/1999EP0721514B1 Magnetically enhanced multiple capacitive plasma generation apparatus and related method
09/22/1999EP0712447B1 Welded susceptor assembly
09/22/1999EP0634501B1 Vacuum film forming method
09/22/1999CN1229442A Coated cutting insert
09/22/1999CN1229266A Manufacturing process for semiconductor device
09/22/1999CN1229110A Interference pigments having blue mass tone
09/22/1999CN1045218C System for conveying liquid at special speed using supersonic vibrator
09/21/1999US5956616 Method of depositing thin films by plasma-enhanced chemical vapor deposition
09/21/1999US5956613 Carbon is scavenged by introducing scavenger gases to react with carbon
09/21/1999US5956602 Deposition of polycrystal Si film
09/21/1999US5955754 Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same
09/21/1999US5955212 Superhard film-coated member and method of manufacturing the same
09/21/1999US5955197 Coating for carbon--carbon composites and method for producing same
09/21/1999US5955161 Blood collection tube assembly
09/21/1999US5955155 Forming a diamond coated layer on a substrate, with pretreatment, depositing and heat treatment
09/21/1999US5955146 Heating alkylmagnesium alkoxide; coating, evaporation, vapor deposition, sublimation, pyrolysis, decomposition
09/21/1999US5955139 Automatic film deposition control
09/21/1999US5955037 Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases
09/21/1999US5954911 Semiconductor processing using vapor mixtures
09/21/1999US5954887 Using a gas consisting essentially of ticl.sub.4 as a cleaning gas for removing a unnecessary portion of the ti film sticking to a process chamber in the film forming apparatus.
09/21/1999US5954881 Ceiling arrangement for an epitaxial growth reactor
09/16/1999WO1999046804A1 Thermal cycling module
09/16/1999WO1999046417A1 Silicon steel sheet and method for producing the same
09/16/1999WO1999030353A9 Surface modification of semiconductors using electromagnetic radiation
09/16/1999WO1999029477A9 Fluorine-doped diamond-like coatings
09/16/1999WO1999028955A3 Chemical vapor deposition of titanium on a wafer comprising an in-situ precleaning step
09/16/1999WO1999023276A8 Long life high temperature process chamber
09/15/1999EP0942473A2 Process for forming a microcrystalline silicon series thin film and apparatus suitable for practicing said process
09/15/1999EP0942459A1 Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device
09/14/1999USRE36295 Enables controlled growth of multicomponent metal oxide thin film including high temperature superconducting thin films which are uniform and reproducible using organometallic complexes as metal oxide source
09/14/1999US5953634 Method of manufacturing semiconductor device
09/14/1999US5953630 Suppression of tungsten film deposition on a semiconductor wafer bevel edge with a halogenide purge gas
09/14/1999US5952108 Silicon oxide on a substrate
09/14/1999US5952102 Vapor deposition
09/14/1999US5952069 Blood collection tube assembly
09/14/1999US5952063 Crucible of pyrolytic boron nitride for molecular beam epitaxy
09/14/1999US5952060 Comprising interior surface of processing chamber having dimond-like carbon coating; extends durability of processing systems; prevents accumulation of residues; does not generate particulates and seals in impurities
09/14/1999US5952047 CVD precursors and film preparation method using the same
09/14/1999US5952046 Method for liquid delivery chemical vapor deposition of carbide films on substrates
09/14/1999US5951923 Vaporizer apparatus and film deposition apparatus therewith
09/14/1999US5951887 Plasma processing apparatus and plasma processing method
09/14/1999US5951820 Compound is evaporated, passed through inner tube of heat exchanger to be precipitated, the heat exchanger is heated to re-evaporate compound, and the re-evaporated compound is precipitated in a filling container, cooled
09/14/1999US5951791 Plating aluminum and nickel-aluminum in the form of a gaseous organoaluminum compound-onto preform, reactive sintering; controlled porosity
09/14/1999US5951787 Polishing surface of ferrite-based stainless steel; baking in inert gas to remove moisture; heat treating to form chromium oxide that is free from iron oxide on the outermost surface
09/14/1999US5951776 Positioning substrate in chemical reactor; lifting cycles
09/14/1999US5951775 Apparatus for full wafer deposition
09/14/1999US5951774 Cold-wall operated vapor-phase growth system
09/14/1999US5951773 Inductively coupled plasma chemical vapor deposition apparatus
09/14/1999US5951772 For semiconductors, integrated circuits
09/14/1999US5951771 Plasma jet system
09/14/1999US5951768 Flame stabilizer for stagnation flow reactor
09/14/1999US5950925 Reactant gas ejector head
09/14/1999US5950693 Bulk chemical delivery system
09/14/1999US5950675 Backflow prevention apparatus for feeding a mixture of gases
09/14/1999US5950646 Vapor feed supply system
09/10/1999WO1999045585A1 Plasma processing apparatus and plasma processing method
09/10/1999WO1999045578A1 Uniform heat trace and secondary containment for delivery lines for processing system
09/10/1999WO1999045577A1 Prevention of ground fault interrupts in a semiconductor processing system
09/10/1999WO1999045567A1 Method and apparatus for predicting plasma-process surface profiles
09/10/1999WO1999045168A1 Plasma cvd method, plasma cvd apparatus, and electrode
09/10/1999WO1999045167A1 Method of depositing silicon with high step coverage
09/10/1999WO1999045166A1 Vacuum processing apparatus
09/10/1999WO1999045165A1 Method of forming phosphosilicate glass having a high wet-etch rate
09/10/1999WO1999045164A1 Method of coating and annealing large area glass substrates
09/10/1999WO1999044760A1 In situ cleaning of the surface inside a vacuum processing chamber
09/09/1999DE19808180A1 Kombinierte Verschleißschutzschicht, Verfahren zur Erzeugung derselben, die damit beschichteten Objekte und deren Verwendung Combination anti-abrasion layer, method of producing the same, the thus-coated objects and the use thereof
09/08/1999EP0940845A2 Susceptor for semiconductor manufacturing equipment and process for producing the same
09/08/1999EP0940839A2 Etching or coating devices
09/08/1999EP0940378A1 Ceramic articles having a conductive surface and method for manufacturing the same
09/08/1999CN1228067A Method of depositing tin oxide and titanium oxide coating on flat glass and resulting coated glass
09/08/1999CN1227968A Susceptor for semiconductor manufacturing equipment and process for producing the same
09/08/1999CN1045015C Dents for reed in high-speed weaving machine, and method of manufacturing same
09/07/1999US5950083 Method for fabricating CMOS transistor with self-aligned silicide (salicide) structure
09/07/1999US5948983 For measuring variations in deposit thickness in a deposit/etch chamber
09/07/1999US5948921 Method for the selective hydrogenation of vinyl oxirane to butylene oxide
09/07/1999US5948541 Boron and nitrogen containing coating and method for making
09/07/1999US5948485 Plasma deposition method and an apparatus therefor
09/07/1999US5948467 Enhanced CVD copper adhesion by two-step deposition process
09/07/1999US5948379 Plasma-chemical deposition of very fine particles
09/07/1999US5948255 Microfabricated particle thin film filter and method of making it
09/07/1999US5948224 Method of controlling a treatment process and vacuum treatment apparatus
09/07/1999US5948169 Apparatus for preventing particle deposition in a capacitance diaphragm gauge
09/07/1999US5948168 Distributed microwave plasma reactor for semiconductor processing
09/07/1999US5948166 Process and apparatus for depositing a carbon-rich coating on a moving substrate
09/07/1999US5948165 Electrostatic chucking mechanism
09/02/1999WO1999044221A1 A seal member and a vacuum chamber
09/02/1999WO1999044219A1 Low pressure inductively coupled high density plasma reactor
09/02/1999WO1999043875A1 Epitaxial growth apparatus
09/02/1999WO1999043874A1 Ceiling arrangement for an epitaxial growth reactor
09/02/1999WO1999043867A1 Deposition of copper with increased adhesion
09/02/1999WO1999043866A1 Liquid vaporizer systems and methods for their use
09/02/1999WO1999043865A1 Combination antiabrasion layer
09/02/1999WO1999043445A1 Passivating a gas vessel and article produced
09/02/1999DE19824440C1 Production of gold-containing pigments
09/01/1999EP0939145A1 Continuous gas saturation system and method
09/01/1999EP0939144A2 Surface-coated object
09/01/1999EP0938741A1 Vacuum plasma processor having coil whth intermediate portion coupling lower magnetic flux density to plasma than center and peripheral portions of the coil
09/01/1999EP0938740A1 Particle controlling method and plasma processing chamber