Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/1999
12/08/1999EP0585343B1 Primary flow cvd apparatus and method
12/08/1999CN1237796A Process for forming microcrystalline silicon series thin film and apparatus suitable for practicing said process
12/08/1999CN1237648A Method for growing high-oriented BCN nanometer tube material
12/08/1999CN1237611A Method for making long-life electroluminescent phosphor
12/08/1999CN1047209C 高密度闪蒸器 High-density flash evaporator
12/08/1999CN1047147C Method for producing coated silicon carbide fibre and reactor thereof
12/07/1999US5998932 Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
12/07/1999US5998644 Volatile organometallic compound containing a divalent metal and a group 13 metal, process for preparing same, and process for preparing a heterometallic oxide film using same
12/07/1999US5998299 Protection structures for the suppression of plasma damage
12/07/1999US5998289 Process for obtaining a transistor having a silicon-germanium gate
12/07/1999US5997963 The process chamber can be used to contain gas reactants for steps such as etching, doping, or growing materials in making integrated electronic, optical or micromechanical devices on the wafer substrate
12/07/1999US5997956 Combustion chemical vapor deposition (?ccvd?), a recently invented cvd technique, allows for open atmosphere deposition of thin films.
12/07/1999US5997950 Substrate having uniform tungsten silicide film and method of manufacture
12/07/1999US5997949 Synthesis of W-Si-N films by chemical vapor deposition using WF6, SiH4 and NH3
12/07/1999US5997948 Process for producing a deposit comprising silica on the surface of a glass product
12/07/1999US5997686 Process for setting a working rate distribution in an etching or plasma CVD apparatus
12/07/1999US5997651 Heat treatment apparatus
12/07/1999US5997650 Reactor having an array of heating filaments and a filament force regulator
12/07/1999US5997649 Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
12/07/1999US5997642 Method and apparatus for misted deposition of integrated circuit quality thin films
12/07/1999US5997639 Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organometallic precursor compounds
12/07/1999US5997589 Adjustment pumping plate design for the chamber of semiconductor equipment
12/07/1999US5996528 Method and apparatus for flowing gases into a manifold at high potential
12/07/1999CA2177013C Spinning substrate holder for cutting tool inserts for improved arc-jet diamond deposition
12/07/1999CA2155928C Plastic articles of reduced gas transmission and method therefor
12/07/1999CA2112102C Methods and apparatus for depositing barrier coatings
12/07/1999CA2007561C Method of toughening diamond coated tools
12/02/1999WO1999062099A1 Gas distributor for a semiconductor process chamber
12/02/1999WO1999061682A1 Method for applying a lubricating layer on an object and object with an adhesive lubricating layer
12/02/1999WO1999061680A1 Gas manifold for uniform gas distribuition and photochemistry
12/02/1999WO1999061679A1 Target for pvd and similar processes
12/02/1999WO1999061677A1 Thin-film processing electromagnet for low-skew magnetic orientation
12/02/1999WO1999061371A2 New class of diamond-based materials and techniques for their synthesis
12/02/1999WO1999054908A8 Crystalline gas distributor for semiconductor plasma etch chamber
12/02/1999WO1999052647B1 Non-planar micro-optical structures
12/02/1999DE19824364A1 Verfahren zum Aufbringen eines Verschleißschutz-Schichtsystems mit optischen Eigenschaften auf Oberflächen Method for applying a wear protection layer system with optical properties to surfaces
12/01/1999EP0960958A2 Method for producing hydrogenated silicon oxycarbide films
12/01/1999EP0960957A2 Method of preparing the surface of a composite body
12/01/1999EP0960435A1 Apparatus and methods for minimizing as-deposited stress in tungsten silicide films
12/01/1999EP0960219A1 Composite body comprising a hard metal, cermet or ceramic substrate body and method of producing the same
12/01/1999EP0842307A4 System for the plasma treatment of large area substrates
12/01/1999CN1237273A Method of producing thin semiconductor film and apparatus thereof
11/1999
11/30/1999US5994678 Apparatus for ceramic pedestal and metal shaft assembly
11/30/1999US5994676 Method for calibrating the temperature of an epitaxy reactor
11/30/1999US5994571 Metal hexafluoroacetylacetonate precursor with a substituted ethylene ligand
11/30/1999US5994240 Method for cleaning semiconductor wafers
11/30/1999US5994209 Heating; doping
11/30/1999US5994158 Controlling gas flow
11/30/1999US5993919 Method of synthesizing diamond
11/30/1999US5993916 Circulating heat exchange medium in vacuum chamber, heating a heater pedestal having surface for supporting substrate, flowing gas into chamber to deposit film
11/30/1999US5993908 Depositing polycrystalline aluminum film containing copper, heating to a target temperature, controlled cooling to a final temperature
11/30/1999US5993770 Thermal conductivity along the direction of the sic crystal growth between 150 and 250 w/m.k, an internal structure having an average grain diameter between 5 to 8 mu
11/30/1999US5993679 Method of cleaning metallic films built up within thin film deposition apparatus
11/30/1999US5993678 Device and method for processing a plasma to alter the surface of a substrate
11/30/1999US5993598 Magnetron
11/30/1999US5993594 Silicon nitride liner, focus ring and/or gas distribution plate, the member having an exposed surface adjacent the substrate holder being effective to minimize particle contamination during processing of substrates.
11/30/1999US5993557 Apparatus for growing single-crystalline semiconductor film
11/30/1999US5993543 Method of producing plasma display panel with protective layer of an alkaline earth oxide
11/30/1999US5993538 Method of forming single-crystalline thin film using beam irradiating method
11/30/1999US5992463 Gas panel
11/30/1999US5992346 Apparatus for the surface treatment of workpieces
11/30/1999US5992159 Method and apparatus for heat extraction by controlled spray cooling
11/30/1999CA2059046C Aluminium surfaces
11/29/1999CA2272815A1 A metallic article having a thermal barrier coating and a method of application thereof
11/25/1999WO1999060621A1 Method and apparatus for treating a semi-conductor substrate
11/25/1999WO1999060183A1 Anti-adherent coating and method for the production thereof
11/25/1999DE19919384A1 Verfahren zum Trockenätzen und Vakuumbehandlungsreaktor A method for dry etching and vacuum treatment reactor
11/25/1999DE19822936A1 Applying a lubricating layer to the surface of a cylinder face
11/25/1999DE19822935A1 Applying lubricating layer to the surface of a form tool
11/25/1999DE19822934A1 Applying lubricating layer to the surface of an object
11/25/1999DE19822932A1 Process for applying a lubricating layer to the surface of a connecting rod
11/25/1999DE19822931A1 Process for applying a lubricating layer to the surface of a gear wheel
11/25/1999DE19822930A1 Applying a lubricating layer to the surface of a valve
11/25/1999DE19822929A1 Applying a lubricating layer to the surface of an object
11/25/1999DE19822928A1 Applying lubricating layer to the surface of the chain
11/25/1999DE19822927A1 Process for applying a lubricating layer to the surface of a camshaft
11/25/1999DE19822926A1 Applying a lubricating layer to the surface of a tool
11/25/1999DE19822925A1 Applying lubricating layer to the surface of a bushing
11/25/1999DE19822903A1 Applying lubricating layer to the surface of a slide tappet
11/25/1999DE19822901A1 Applying lubricating layer to the surface of a piston
11/25/1999DE19822900A1 Applying a lubricating layer to the surface of a valve lifter
11/25/1999DE19822899A1 Applying lubricating layer to the surface of an engine component
11/25/1999DE19822898A1 Applying a lubricating layer to the surface of a valve clamping washer
11/25/1999DE19809675C1 Apparatus and method for diamond coating of tubular components of limited length
11/24/1999EP0959151A2 Thin film forming apparatus
11/24/1999EP0959150A2 Apparatus for depositing thin films
11/24/1999EP0959149A2 Apparatus for depositing thin films
11/24/1999EP0959148A2 Method for producing diamond films using a vapour-phase synthesis system
11/24/1999EP0958401A1 Apparatus and method for high density plasma chemical vapor deposition
11/24/1999EP0958400A1 Method and apparatus for plasma deposition of a thin film onto the interior surface of a container
11/24/1999EP0958399A1 Barrier films having vapor coated evoh surfaces
11/24/1999EP0958195A2 Method for coating surfaces using an installation with sputter electrodes
11/24/1999EP0797688B1 Method for deposition of diamondlike carbon films
11/23/1999US5991081 Anti-reflection coatings and coated articles
11/23/1999US5990559 Circuitry comprising roughened platinum layers, platinum-containing materials, capacitors comprising roughened platinum layers, methods forming roughened layers of platinum, and methods of forming capacitors
11/23/1999US5990556 Stacked thin film assembly
11/23/1999US5990013 Process for treating a semiconductor substrate comprising a surface-treatment step
11/23/1999US5989999 Construction of a tantalum nitride film on a semiconductor wafer
11/23/1999US5989998 For semiconductor devices; by plasma polymerization or oxidizing an alkoxy(alkyl or phenyl)silane compound of given formula to yield a silicon oxide film containing an organic component not regularly arranged
11/23/1999US5989957 Process for fabricating semiconductor memory device with high data retention including silicon oxynitride etch stop layer formed at high temperature with low hydrogen ion concentration
1 ... 585 586 587 588 589 590 591 592 593 594 595 596 597 598 599 600 601 602 603 604 605 ... 719