Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
03/2000
03/09/2000WO2000012447A1 Process for the production of improved boron coatings onto graphite and article obtained in this process
03/09/2000DE19934336A1 High temperature silicon carbide semiconductor substrate production and treatment apparatus, especially for silicon carbide epitaxy, has a susceptor completely covered by a cover plate and the substrate
03/09/2000DE19921129A1 Titanium nitride film deposition, e.g. on semiconductor wafers, is carried out by CVD from both tetrakis-dimethylamido-titanium and tetrakis-diethylamido-titanium
03/09/2000CA2341696A1 Method for applying a coating to a substrate
03/08/2000EP0984077A2 Diamond-coated hard metal member
03/08/2000EP0984076A1 Apparatus for coating substrates in a vacuum chamber
03/08/2000EP0983791A1 Method and apparatus for recovering rare gas
03/08/2000EP0763147B1 Method and apparatus for producing thin films
03/08/2000CN1050158C Method and apparatus for treating surface
03/07/2000US6035101 High temperature multi-layered alloy heater assembly and related methods
03/07/2000US6034356 RTP lamp design for oxidation and annealing
03/07/2000US6033732 Titanyl bis(dipivaloylmethane)
03/07/2000US6033727 Method for strengthening and aging-prevention of TZP by formation of silica/zircon layer on the surface thereof
03/07/2000US6033721 Image-based three-axis positioner for laser direct write microchemical reaction
03/07/2000US6033533 Method of forming films over inner surface of cylindrical member
03/07/2000US6033493 Process for coating a passivatable metal or alloy substrate with an oxide layer, and fuel assembly cladding and guide tubes and spacer grid coated with an oxide layer
03/07/2000US6033481 Plasma processing apparatus
03/07/2000US6033480 Wafer edge deposition elimination
03/07/2000US6033479 Process gas delivery system for CVD having a cleaning subsystem
03/07/2000US6032611 Apparatus for forming single-crystalline thin film by beam irradiator and beam reflecting device
03/02/2000WO2000011726A1 Method for depositing layers of high quality semiconductor material
03/02/2000WO2000011721A1 Electronic devices with barrier film and process for making same
03/02/2000WO2000011667A1 Hard disk vapor lube
03/02/2000DE19813523C2 CVD-Reaktor und dessen Verwendung CVD reactor and its use
03/01/2000EP0982772A1 A semiconductor non-planar storage capacitor
03/01/2000EP0982309A2 Volatile organic barium, strontium and calcium compounds and method for the preparation of layered materials with barium, strontium or calcium oxides or fluorides from these compounds
03/01/2000EP0981656A1 Low resistivity w using b 2?h 6?
03/01/2000EP0981655A2 Chemical vapour deposition precursors
03/01/2000EP0981502A1 Method for depositing a coating layer on an optical fibre while it is being drawn and device for its implementation
03/01/2000EP0784713A4 Conformal titanium-based films and method for their preparation
03/01/2000EP0550630B1 Abrasion wear resistant coated substrate product
03/01/2000CN1245835A Hydrogen inhibition method in silicon device with or without ferroelectric clad underlayer
02/2000
02/29/2000US6031211 Zone heating system with feedback control
02/29/2000US6031198 Plasma processing method and apparatus
02/29/2000US6030902 Apparatus and method for improving uniformity in batch processing of semiconductor wafers
02/29/2000US6030900 Process for generating a space in a structure
02/29/2000US6030893 Forming a dielectric layer covering the substrate containing a conductive area, patterning and etching the dielectric layer to form a hole in a portion of conductive area, forming conductive layer on dielectric layer to fill the hole
02/29/2000US6030881 High throughput chemical vapor deposition process capable of filling high aspect ratio structures
02/29/2000US6030666 Method for microwave plasma substrate heating
02/29/2000US6030661 Device and a method for epitaxially growing objects by CVD
02/29/2000US6030509 Apparatus and method for shielding a wafer holder
02/29/2000US6030461 Portable cooling system for use with a semiconductor fabrication system
02/29/2000US6030460 Chemical vapor deposition reactor having a support for substrate, and at least one inlet port, a source of ozone gas, a source of organometallic compound, a source of ultraviolet radiation
02/29/2000US6030459 Low-pressure processing device
02/29/2000US6030457 Substrate processing apparatus
02/29/2000US6030456 Installation to supply gas
02/29/2000US6030454 Composition and method for forming thin film ferrite layers on a substrate
02/29/2000US6029718 Chemical delivery system employing containment crate
02/29/2000US6029717 High aspect ratio containers for ultrahigh purity chemicals
02/29/2000US6029680 Method for in situ removal of particulate residues resulting from cleaning treatments
02/24/2000WO1999061371A8 New class of diamond-based materials and techniques for their synthesis
02/24/2000DE19924174A1 Composite material, e.g. high speed milling tool insert, electrical component or wear or heat protective component, comprises a microwave sintered cermet or hard metal with a modified surface layer and a lower density core
02/23/2000EP0981171A2 Process for fabricating device comprising lead zirconate titanate
02/23/2000EP0980701A1 Gas recovery unit
02/23/2000EP0980445A1 Processing insert, and production of same
02/22/2000US6028393 E-beam/microwave gas jet PECVD method and apparatus for depositing and/or surface modification of thin film materials
02/22/2000US6028014 Controlling selected parameter of the plasma to alter the ratio of molecular oxygen cations to atomic oxygen cations detected in the plasma, then supplying tetraethoxysilane into vapor deposition reactor to coat semiconductor with silica
02/22/2000US6028012 Process for forming a gate-quality insulating layer on a silicon carbide substrate
02/22/2000US6027826 Method for making ceramic-metal composites and the resulting composites
02/22/2000US6027792 Coating film excellent in resistance to halogen-containing gas corrosion and halogen-containing plasma corrosion, laminated structure coated with the same, and method for producing the same
02/22/2000US6027766 Annealing the a glass float ribbon having a protective coating of tin and a vapor-deposited overcoating of a titanium dioxide precursor to produce a dimensiaonally-stable oxidation catalyst
02/22/2000US6027760 Photoresist coating process control with solvent vapor sensor
02/22/2000US6027662 Materials processing by separately generated process medium constituents
02/22/2000US6027629 Corrosion resistance; porous and non porous anodizing
02/22/2000US6027569 Gas injection systems for a LPCVD furnace
02/22/2000US6026764 Apparatus for low pressure chemical vapor deposition
02/22/2000US6026762 Apparatus for improved remote microwave plasma source for use with substrate processing systems
02/22/2000US6026589 Wafer carrier and semiconductor apparatus for processing a semiconductor substrate
02/22/2000CA2195048C Blood collection tube assembly
02/17/2000WO2000008681A1 Misted precursor deposition apparatus and method with improved mist and mist flow
02/17/2000WO2000008680A1 Vapor growth method for metal oxide dielectric film and vapor growth device for metal oxide dielectric material
02/17/2000WO2000008230A1 Copper precursor composition and process for manufacture of microelectronic device structures
02/17/2000WO2000008229A1 Esrf chamber cooling system and process
02/17/2000WO2000008225A2 Organocopper precursors for chemical vapor deposition
02/17/2000WO2000007954A1 Process for coating glass
02/17/2000WO2000007950A1 Creating silica soot with a plug-free system
02/17/2000WO2000007688A1 Esrf coolant degassing process
02/17/2000WO1999041424A3 Reflow chamber and process
02/17/2000DE19836652A1 Installation for coating substrates comprises chambers which are arranged one after another at successively lower levels, and are supplied with substrates by means of a gravity conveyor unit
02/17/2000CA2339576A1 Creating silica soot with a plug-free system
02/16/2000EP0979316A1 Fluidized bed reactor to deposit a material on a surface by chemical vapour deposition, and methods of forming a coated substrate therewith
02/16/2000CN1244598A Method for preparing film by using atom layer deposition
02/15/2000US6025609 Laser synthesized ceramic electronic devices and circuits and method for making
02/15/2000US6025575 Heating apparatus for chemical vapor deposition equipment
02/15/2000US6025280 Use of SiD4 for deposition of ultra thin and controllable oxides
02/15/2000US6025252 Semiconductor device and method of fabricating the same
02/15/2000US6025222 Vapor phase growth of a dielectric film and a fabrication process of a semiconductor device having such a dielectric film
02/15/2000US6025115 Selectively irradiating surface of substrate with light in gas atmosphere to form surface-modified layer, annealing to stabilize and make more etch resistant, dry etching non-modified portion
02/15/2000US6025076 Vapor phase deposition and cutting edges, patterns and spacings for grooves and patterns
02/15/2000US6025013 PICVD process and device for the coating of curved substrates
02/15/2000US6024915 Metal base, coating of particles and dispersion
02/15/2000US6024844 Enhanced reactive DC sputtering system
02/15/2000US6024800 Plasma processing apparatus
02/15/2000US6024799 Chemical vapor deposition manifold
02/15/2000US6024105 Semiconductor manufacturing device and method of removing particles therefrom
02/15/2000US6024044 Dual frequency excitation of plasma for film deposition
02/14/2000CA2271282A1 Process for fabricating device comprising lead zirconate titanate
02/10/2000WO2000007228A1 Epitaxial growth furnace
02/10/2000WO2000007223A2 Method for reducing particle emission or absorption on a surface
02/10/2000WO2000007221A2 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots