Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
02/2000
02/10/2000WO2000007216A1 A ceramic composition for an apparatus and method for processing a substrate
02/10/2000WO2000007215A2 A method of allowing a stable power transmission into a plasma processing chamber
02/10/2000WO2000006795A1 Cvd tungsten deposition on oxide substrates
02/10/2000WO2000006794A1 Hardcoats for flat panel display substrates
02/10/2000WO1999057330A9 Oxide/organic polymer multilayer thin films deposited by chemical vapor deposition
02/10/2000DE19932640A1 Photovoltaic module for converting solar radiation into electrical energy, comprises substrate front and back dual layer contacts and at least one solar cell
02/10/2000DE19853598A1 Manufacture of thin film by atomic layer deposition
02/10/2000DE19835154A1 Apparatus for vacuum coating of substrates, in particular, those with spherical surfaces comprises two vacuum chambers which are located adjacent to one another and have rotating transport arms
02/10/2000DE19833718A1 Verfahren zur Verringerung der Partikelabgabe und Partikelaufnahme einer Oberfläche A method for reducing the particle charge and particle of a surface
02/09/2000EP0978491A2 Precision burners for oxidizing halide-free, silicon-containing compounds
02/09/2000EP0977907A1 Combination antiabrasion layer
02/09/2000EP0977906A1 Metered gas control in a substrate processing apparatus
02/09/2000EP0787220B1 Packing element, in particular for shutting-off and regulating means, and process for producing the same
02/09/2000CN1244186A Method for chemical vapour infiltration of refractory substances especially carbon and silicon carbide
02/09/2000CN1244031A Method and apparatus for manufacturing semiconductor layers, and manufacture of photovoltaic solar cell
02/08/2000US6023405 Electrostatic chuck with improved erosion resistance
02/08/2000US6023025 Electric wire and manufacturing method thereof
02/08/2000US6022812 Dielectric polysilicate films by vapor deposition of tetra-alkoxysilane(s) on a substrate; exposing to water and acid or base catalyst to gel; drying; high porosity; low dielectric constant; semiconductors; integrated circuits
02/08/2000US6022811 Method of uniform CVD
02/08/2000US6022806 Supplying process gases; vapor deposition; rotating wafer
02/08/2000US6022622 Hard carbon film-coated substrate and method for fabricating the same
02/08/2000US6022602 Plasma modification of lumen surface of tubing
02/08/2000US6022595 Passing gaseous reactant through field with sufficient strength to polarize gaseous molecules of gaseous reactant, reacting molecules to deposit film
02/08/2000US6022587 Prewafer reaction layer is deposited onto a susceptor placed in reaction chamber to form prewafer reaction layer coated susceptor prior to film deposition, deposition gas is fed into reaction chamber to flow over the prewafer to form film
02/08/2000US6022586 Supplying first film-forming gases into process chamber of vessel while heating the chamber so as to form a first pre-coating film on the inner surface of the process vessel, loading semiconductor wafer into chamber, coating
02/08/2000US6022460 Enhanced inductively coupled plasma reactor
02/08/2000US6022418 Vacuum processing method
02/08/2000US6022416 Point-of-use vaporization system and method
02/08/2000US6022414 Single body injector and method for delivering gases to a surface
02/08/2000US6022413 Thin-film vapor deposition apparatus
02/08/2000US6022412 Epitaxial reactor, susceptor and gas-flow system
02/08/2000US6021582 Temperature control of parylene dimer
02/08/2000CA2192900C Methods of preparing cutting tool substrate materials for deposition of a more adherent diamond coating and products resulting therefrom
02/03/2000WO2000005754A1 Semiconductor thin film and thin film device
02/03/2000WO2000005753A1 Infra-red transparent thermal reactor cover member
02/03/2000WO2000005752A1 Method and apparatus for processing wafers
02/03/2000WO2000005751A1 Method and apparatus for reducing contamination of a substrate in a substrate processing system
02/03/2000WO2000005431A1 Cvd apparatus
02/03/2000WO2000005430A1 Chemical vapor deposition vaporizer
02/03/2000WO2000005000A1 Surface coatings
02/03/2000WO1999054521A3 Method and apparatus for modifying the profile of high-aspect-ratio gaps using differential plasma power
02/03/2000DE19932247A1 Supplying user points with vaporized raw material containing silicon for glass production involves reduction of the gas pressure on the raw material to near zero in each participating vessel
02/03/2000DE19834314A1 Application of a scratch resistant coating and an antireflective system onto a plastic substrate, in particular spectacle lenses by consecutive plasma and sputtering methods
02/03/2000DE19833448A1 Cleaning a CVD apparatus used for depositing oxide ceramics on semiconductor substrates comprises contacting the residues with an etching medium containing free diketones
02/02/2000EP0977249A2 An improved method of forming an arsenic silicon glass film onto a silicon structure
02/02/2000EP0977246A2 Production process of semiconductor layer, fabrication process of photovoltaic cell and production apparatus of semiconductor layer
02/02/2000EP0976847A2 Apparatus and process for controlled atmosphere chemical vapor deposition
02/02/2000EP0976846A1 Thin film forming device for forming silicon thin film having crystallinity
02/02/2000EP0975821A1 Cvd reactor and use thereof
02/02/2000EP0975820A1 Hard material coating of a cemented carbide or carbide containing cermet substrate
02/02/2000EP0975435A1 Modular coating fixture
02/02/2000CN2361640Y Reaction chamber for vapor-phase growth of diamond film
02/02/2000CN1049018C Diamond-phase carbon tubes and CVD process for their production
02/01/2000US6021152 Reflective surface for CVD reactor walls
02/01/2000US6020570 Plasma processing apparatus
02/01/2000US6020511 Methods, complexes, and systems for forming metal-containing films
02/01/2000US6020458 Precursors for making low dielectric constant materials with improved thermal stability
02/01/2000US6020253 Decomposition; phosphiding
02/01/2000US6020036 Method of forming hard carbon film over the inner surface of guide bush
02/01/2000US6020035 Film to tie up loose fluorine in the chamber after a clean process
02/01/2000US6019849 A number of air actuated valves are added to a conventional apparatus for treating semiconductor wafers with hexamethyldisilazane vapor to improve the adhesion between the wafers and resist layers.
02/01/2000US6019848 Lid assembly for high temperature processing chamber
01/2000
01/27/2000WO2000004576A1 Method and apparatus for plasma processing
01/27/2000WO2000004574A1 Improved gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
01/27/2000WO2000004206A1 Method for depositing pyrolytic coatings on metallic articles
01/27/2000WO2000004205A1 High throughput organometallic vapor phase epitaxy (omvpe) apparatus
01/27/2000WO1999045167A8 Method of depositing silicon with high step coverage
01/27/2000CA2334349A1 High throughput organometallic vapor phase epitaxy (omvpe) apparatus
01/26/2000EP0975014A1 Enhanced CVD copper adhesion by two-step deposition process
01/26/2000EP0975005A2 Method for controlling plasma-generating high frequency power, and plasma generating apparatus
01/26/2000EP0974681A1 Method and apparatus for calibrating the gas pressure in a vacuum working chamber (vacuum coating chamber or recipient)
01/26/2000EP0974615A1 Aliphatic polyester film and gas barrier film
01/26/2000EP0973957A1 Method of making titania-doped fused silica
01/26/2000EP0764221A4 Apparatus for deposition of thin-film, solid state batteries
01/26/2000EP0667921B1 Microwave apparatus for depositing thin films
01/26/2000EP0649479B1 Method and apparatus for coating a glass substrate
01/26/2000CN2360422Y Automatic film coating appts for vapour phase deposition
01/25/2000US6018065 Method of fabricating iridium-based materials and structures on substrates, iridium source reagents therefor
01/25/2000US6017396 Plasma film forming apparatus that prevents substantial irradiation damage to the substrate
01/25/2000US6017395 Gas pressure regulation in vapor deposition
01/25/2000US6017144 Method and apparatus for depositing highly oriented and reflective crystalline layers using a low temperature seeding layer
01/25/2000US6016766 Microwave plasma processor
01/25/2000US6016765 Plasma processing apparatus
01/25/2000US6016611 Gas flow control in a substrate processing system
01/20/2000WO2000003566A1 Microwave discharge apparatus
01/20/2000WO2000003425A1 Plasma process to deposit silicon nitride with high film quality and low hydrogen content
01/20/2000WO2000003422A2 Gas flow control in a substrate processing system
01/20/2000WO2000003421A2 Improved endpoint detection for substrate fabrication processes
01/20/2000WO2000003420A2 Method for forming a copper film on a substrate
01/20/2000WO2000003415A1 Rf matching network with distributed outputs
01/20/2000WO2000003399A1 Primary target for forming fission products
01/20/2000WO2000003169A2 Manifold system of removable components for distribution of fluids
01/20/2000WO2000003065A1 Surface treatment apparatus
01/20/2000WO2000003064A1 Gas distributor plate for a processing apparatus
01/20/2000WO2000003063A1 Liquid precursor for chemical vapor deposition
01/20/2000WO2000003062A1 Coated grooving or parting insert
01/20/2000WO2000003061A1 Method and apparatus for forming amorphous and polycrystalline silicon germanium alloy films
01/20/2000WO2000003060A1 Chemical vapor deposition apparatus employing linear injectors for delivering gaseous chemicals and method
01/20/2000WO2000003058A1 Cvd photo resist and deposition
01/20/2000WO2000003057A1 Multi-position load lock chamber