Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
04/2000
04/12/2000EP0992735A2 Control vent system for ultra-high purity delivery system for liquefied compressed gases
04/12/2000EP0992611A2 Method for forming film or fabricating semiconductor device
04/12/2000EP0992610A2 Barrier coating on plastic substrates and process for its deposition
04/12/2000EP0992609A1 Process for depositing a barrier coating on plastic objects
04/12/2000EP0992608A1 Light-impermeable, high purity silicon carbide material, a light shielding member for a semiconductor-treating apparatus, and a semiconductor-treating apparatus
04/12/2000EP0992607A1 Substrate holder
04/12/2000EP0992605A2 Support member, holder, process, and apparatus in the field of surface-treatment
04/12/2000EP0992603A1 Thermal barrier coating systems and materials
04/12/2000EP0992472A2 Corrosion-resistant members against a chlorine-based gas
04/12/2000EP0992281A2 The combinatorial synthesis of novel materials
04/12/2000EP0992072A1 Controlled conversion of metal oxyfluorides into superconducting oxides
04/12/2000EP0991792A1 Gas injection disc assembly for cvd applications
04/12/2000EP0991791A1 Packaging material
04/12/2000EP0991337A1 Ornamental stones
04/12/2000CN1250587A Model based temperature controller for semiconductor thermal processors
04/12/2000CN1250490A Susceptor designs for silicon carbide thin films
04/12/2000CN1250486A Plastic containers with an external gas barrier coating
04/12/2000CN1051400C Method of forming a dielectric
04/12/2000CN1051263C 氧化物涂层切削刀具 Oxide coated cutting tool
04/11/2000US6049736 Implantable medical device with electrode lead having improved surface characteristics
04/11/2000US6049661 Method of simulating shape of sample after surface reaction processing, apparatus and recording medium
04/11/2000US6049131 Device formed by selective deposition of refractory metal of less than 300 Angstroms of thickness
04/11/2000US6048793 Method and apparatus for thin film growth
04/11/2000US6048792 Method for manufacturing an interconnection structure in a semiconductor device
04/11/2000US6048578 Closed loop carbon monoxide self-contained nickel carbonyl deposition process
04/11/2000US6048403 Multi-ledge substrate support for a thermal processing chamber
04/11/2000US6047744 Delivery system and manifold
04/11/2000US6047713 Flowing a cleaning gas into a vacuum chamber, positioning throttle valve so that deposited sufaces of valve are exposed to interior of the chamber, ingiting a plasma of cleaning gas to etch away unwanted film deposited on the throttle valve
04/11/2000CA2082853C Process for the production of a thin film optical waveguide of tio2
04/06/2000WO2000019592A1 Dechucking method and apparatus for workpieces in vacuum processors
04/06/2000WO2000019508A1 Silicon carbide deposition method and use as a barrier layer and passivation layer
04/06/2000WO2000019507A1 Method of plasma-assisted film deposition
04/06/2000WO2000019501A1 Method and apparatus for plasma processing
04/06/2000WO2000019498A1 In situ deposition of low k si carbide barrier layer, etch stop, and anti-reflective coating for damascene applications
04/06/2000WO2000019494A1 Method for manufacturing carbon nanotubes as functional elements of mems devices
04/06/2000WO2000019491A1 Method for cleaning a process chamber
04/06/2000WO2000019481A2 Low contamination high density plasma processing chamber and methods for processing a semiconductor substrate
04/06/2000WO2000018982A1 Method and apparatus for forming polycrystalline and amorphous silicon films
04/06/2000WO2000018981A1 Method for diamond-coating surfaces
04/06/2000WO2000018980A1 An in-line sputter deposition system
04/06/2000WO2000018518A1 A process for ultra smooth diamond coating on metals and uses thereof
04/05/2000EP0990061A1 Method and device for vacuum-coating a substrate
04/05/2000EP0990060A1 A method of coating edges with diamond-like carbon
04/05/2000EP0990059A1 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
04/05/2000EP0989915A1 Passivating a gas vessel and article produced
04/05/2000EP0783596B1 Composite body, use of this composite body and process for its preparation
04/05/2000CN1051088C Process for preparing fluoride-bearing organotin compounds
04/04/2000US6046439 System and method for thermal processing of a semiconductor substrate
04/04/2000US6046364 Regeneration of metal CVD precursors
04/04/2000US6046345 Barium strontium β-diketonates, processes for producing the same and processes for producing barium strontium-containing oxide dielectric films with the use of the same
04/04/2000US6045916 Coating film and preparation method thereof
04/04/2000US6045877 Pyrolytic chemical vapor deposition of silicone films
04/04/2000US6045862 CVD film forming method in which a film formation preventing gas is supplied in a direction from a rear surface of an object to be processed
04/04/2000US6045671 Systems and methods for the combinatorial synthesis of novel materials
04/04/2000US6045667 Process and system for the treatment of substrates using ions from a low-voltage arc discharge
04/04/2000US6045665 Efficiently prevents peeling of deposits formed on the surface of the inner walls of the thin-film formation apparatus and suppresses particle production without contaminating the inside of the thin-film forming device
04/04/2000US6045619 Horizontal-type silicon-nitride furnace
04/04/2000US6045618 Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment
04/04/2000US6045617 Method for CVD surface coating and CVD reactor system
04/04/2000US6044981 Microfabricated filter with specially constructed channel walls, and containment well and capsule constructed with such filters
04/04/2000US6044792 Plasma CVD apparatus
03/2000
03/30/2000WO2000018198A1 Substrate electrode plasma generator and substance/material processing method
03/30/2000WO2000017920A1 Plasma processing method
03/30/2000WO2000017917A1 Plasma film forming method
03/30/2000WO2000017416A1 Composite material coating and a method for the production thereof
03/30/2000WO2000017278A1 Method for the chemical vapor deposition of copper-based films and copper source precursors for the same
03/30/2000WO1999067440A3 Substrate support member with a purge gas channel and pumping system
03/30/2000DE19942303A1 Coated hard metal or cermet, especially for wear protected cutter inserts, has an aluminum oxide and zirconium and/or hafnium oxide layer containing finely dispersed titanium oxide, oxycarbide, oxy nitride or oxy carbonitride
03/30/2000DE19844538A1 Verfahren zur Diamant-Beschichtung von Oberflächen A method for diamond coating of surfaces
03/29/2000EP0989595A2 Device for processing a surface of a substrate
03/29/2000EP0989211A1 Process for obtaining diamond layers by gaseous-phase synthesis
03/29/2000EP0989204A1 Process for preparing nitride film
03/29/2000EP0989203A1 Cu(hfac)TMVS precursor with water additive to increase the condcuctivity of Cu
03/29/2000EP0989133A2 Solution of copper compound for the copper film deposition from chemical vapor deposition and the method of synthesis
03/29/2000EP0988407A1 Method for producing coated workpieces, uses and installation for the method
03/29/2000EP0988406A1 Method for making a non-sticking diamond like nanocomposite
03/29/2000EP0987966A1 Decorative stone
03/29/2000CN1249040A Coatings, methods and apparatus for reducing reflection from optical substrates
03/29/2000CN1249012A Method of multifunctional surface treatment, and device for implementing same
03/28/2000US6043460 System and method for thermal processing of a semiconductor substrate
03/28/2000US6043450 Method to compensate for non-uniform film growth during chemical vapor deposition
03/28/2000US6043177 Modification of zeolite or molecular sieve membranes using atomic layer controlled chemical vapor deposition
03/28/2000US6043167 Method for forming low dielectric constant insulating film
03/28/2000US6043149 Method of purifying a metal line in a semiconductor device
03/28/2000US6043147 Method of prevention of degradation of low dielectric constant gap-fill material
03/28/2000US6043140 Method for growing a nitride compound semiconductor
03/28/2000US6042901 Suppling reactant gases of silicon tetrafluoride and silicon hydride in a temperature-controlled gas flow ratio, e,g, temperature of the growing film controlled as a function of the reactant gases ratio; stable moisture-resistant films
03/28/2000US6042900 CVD method for forming diamond films
03/28/2000US6042887 Chemical vapor deposition using tetraethoxysilane (teos) to form sub-atmospheric undoped silicon glass (sausg) dielectric over semiconductor structure, then etching aperture through dielectric with greater uniformity
03/28/2000US6042886 Hot filament chemical vapor deposition (hf-cvd) of a rough diamond layer on a grinding tool
03/28/2000US6042758 Precision replication by chemical vapor deposition
03/28/2000US6042654 Thermally decomposing chlorine gas to form free radicals; reacting free radicals with said deposits formed inside process chamber on internal components made of quartz, silicon carbide coated graphite, stainless steel; removing by products
03/28/2000US6042653 Susceptor for bearing an object to be processed thereon
03/28/2000US6042652 Atomic layer deposition apparatus for depositing atomic layer on multiple substrates
03/28/2000US6042650 Processing apparatus for fabricating LSI with protected beam damper
03/28/2000US6042372 Heat treatment apparatus
03/28/2000US6041735 Inductively coupled plasma powder vaporization for fabricating integrated circuits
03/28/2000US6041734 Use of an asymmetric waveform to control ion bombardment during substrate processing
03/28/2000US6041733 Plasma processing apparatus protected from discharges in association with secondary potentials
03/28/2000CA2109198C Primary flow cvd apparatus and method