Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
05/2000
05/03/2000EP0996767A1 Reflective surface for cvd reactor walls
05/03/2000EP0996766A1 Method for producing a magnesia based deposit
05/03/2000EP0996765A1 Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer
05/03/2000EP0835332B1 Plasmapolymer surface coating and heat exchanger coated therewith
05/03/2000CN1252108A Method for reducing metal contamination during semiconductor processing in reactor having metal components
05/02/2000US6057250 Low temperature reflow dielectric-fluorinated BPSG
05/02/2000US6057236 CVD/PVD method of filling structures using discontinuous CVD AL liner
05/02/2000US6057235 Method for reducing surface charge on semiconducter wafers to prevent arcing during plasma deposition
05/02/2000US6057229 Method for metallizing submicron contact holes in semiconductor bodies
05/02/2000US6057047 Porous ceramic material of at least 10 layers where at least three layers have 20% by volume porosity and at least one other layer has less than 5% by vol. porosity; thermal barrier; coated gas turbine engine components
05/02/2000US6057031 Plastic substrate with thin metal-containing layer
05/02/2000US6057022 Pressure gradient CVI/CVD apparatus, process and product
05/02/2000US6057005 Plasma cvd process, high-frequency power introducing electrode to generate a plasma in the film forming chamber, microcrystalline silicon film with excellent electrical and optical characteristics to be formed even at high forming
05/02/2000US6057004 Plasma of air, oxygen, steam, and/or an inert gas, and an organosilicon compound, a coating that contains silicate forms on the surface of dental work,
05/02/2000US6056999 Titanium carbonitride coated cemented carbide and cutting inserts made from the same
05/02/2000US6056994 Liquid deposition methods of fabricating layered superlattice materials
05/02/2000US6056849 Apparatus for the surface treatment of workpieces by means of a plasma
05/02/2000US6056824 Free floating shield and semiconductor processing system
05/02/2000US6056823 Temperature controlled gas feedthrough
05/02/2000US6056443 Guide bush and method of forming film over guide bush
05/02/2000US6056024 Bulk chemical delivery system
05/02/2000US6055929 Magnetron
05/02/2000US6055928 Plasma immersion ion processor for fabricating semiconductor integrated circuits
05/02/2000US6055927 Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
04/2000
04/27/2000WO2000024050A1 Cvd nanoporous silica low dielectric constant films
04/27/2000WO2000024044A1 Wafer support of semiconductor manufacturing system
04/27/2000WO2000023636A1 Excess cvd reactant control
04/27/2000WO2000023635A1 Liquid compounds for formation of materials containing alkaline earth metals
04/27/2000WO2000023201A1 Superalloy component with abrasive grit-free coating
04/27/2000WO1999061371A3 New class of diamond-based materials and techniques for their synthesis
04/27/2000DE19950375A1 Densification of porous structures using toluene in chemical vapor infiltration
04/27/2000DE19849205A1 Transparentes Barriereschichtensystem Transparent barrier layer system
04/26/2000EP0995815A1 Combination cvi/cvd and heat treat suceptor lid
04/26/2000EP0995814A2 Method and apparatus for inhibiting infiltration of a reactive gas into porous refractory insulation
04/26/2000EP0995813A2 Method and apparatus for measurement of weight during CVI/CVD process
04/26/2000EP0995342A1 Method for improved cleaning of substrate processing systems
04/26/2000EP0995340A1 Frequency selected, variable output inductor heater system and method
04/26/2000EP0995218A1 Plasma treater systems and treatment methods
04/26/2000EP0994973A1 Apparatus and method for nucleation and deposition of diamond using hot-filament dc plasma
04/26/2000EP0838097B1 ELECTROCATALYTIC STRUCTURE COMPRISING A MATRIX OF SiOxCyHz HAVING DISPERSED THEREIN PARTICLES OF CATALYTIC MATERIAL
04/26/2000EP0650536B1 Deposition apparatus and method
04/26/2000CN1051903C Method and apparatus for ignition of CVD plasmas
04/25/2000US6054735 Very thin PECVD SiO2 in 0.5 micron and 0.35 micron technologies
04/25/2000US6054379 Method of depositing a low k dielectric with organo silane
04/25/2000US6054375 Method for making laser synthesized ceramic electronic devices and circuits
04/25/2000US6054206 Vapor deposit of a film of a silica precursor on a substrate in an environment with low oxidant content and removiing all ofthe organic groups; low dielectric constant insulating materials in semiconductor devices
04/25/2000US6054191 Decarbonization of a titanium nitride/silicon interface with an plasma gas activated to react with the carbon present from the organotitanium compound used in the vapor disposition of the nitride layer; transforming to a lower electrical
04/25/2000US6054188 Non-ideal barrier coating architecture and process for applying the same to plastic substrates
04/25/2000US6054185 Substrate with superhard coating containing boron and nitrogen and method of making the same
04/25/2000US6054183 Uniformly distributing monolayer of diamond gritheating said grit covered substrate in chemical vapor deposition chamber to deposit polycrystalline diamond layer; recovering polishing pad and conditioning head
04/25/2000US6054018 Outside chamber sealing roller system for surface treatment gas reactors
04/25/2000US6054013 Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
04/25/2000US6053982 Wafer support system
04/25/2000US6053171 Plasma treated tubing
04/25/2000US6053123 Plasma-assisted metallic film deposition
04/25/2000CA2138292C Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten cvd
04/20/2000WO2000022658A1 Semiconductor device and method for manufacturing the same
04/20/2000WO2000022187A1 Method for preparing titanium coatings
04/20/2000WO2000022068A1 Anti-coking coatings
04/20/2000WO2000021905A1 Three dimensionally periodic structural assemblies on nanometer and longer scales
04/20/2000DE19944977A1 Beschichtungen zur Anwendung bei Brennstoffeinspritzvorrichtungskomponenten Coatings for use in fuel injector components
04/20/2000DE19848025A1 Verfahren zur Oberflächenbehandlung von Werkzeugen und Werkzeuge mit behandelter Oberfläche A method of surface treatment of tools and tools with a treated surface
04/20/2000DE19847278A1 Process for coating a vehicle wheel rim comprises producing a monomer film on the rim by condensing from the vapor phase, and then applying a reflecting layer and a transparent layer
04/20/2000CA2314356A1 Anti-coking coatings for refractory alloys used in the petroleum field
04/19/2000EP0994502A2 Dynamic blending gas delivery system and method
04/19/2000EP0994201A2 Method for surface treatment of tools
04/19/2000EP0994118A2 Complex for the high dielectric film deposition and the method of deposition
04/19/2000EP0994080A1 Glass coating agent, method for coating glass material using the same and coated product
04/19/2000EP0695376B1 Magnetic roller gas gate employing transonic sweep gas flow
04/19/2000CN1250822A Surface treatment holder and holding frame, and method and equipment therefor
04/19/2000CN1051554C Metalorganic compounds
04/19/2000CN1051553C Preparation of metalorganic compounds for growing epitaxial semiconductor layers
04/18/2000US6051823 Method and apparatus to compensate for non-uniform film growth during chemical vapor deposition
04/18/2000US6051517 Molecular sieve membrane; separation of material
04/18/2000US6051321 Low dielectric constant materials and method
04/18/2000US6051287 Laser desorption of CVD precursor species
04/18/2000US6051286 Heater assembly with an integrated rf plane for bottom powered rf capability allows pecvd deposition at a temperature of at least 400 degrees c. for more efficient plasma treatment.
04/18/2000US6051285 Support member is sufficiently cooled so as to suppress thermal deformation and abnormal discharge, thus enabling to preferably carry out the film formation.
04/18/2000US6051284 Chamber monitoring and adjustment by plasma RF metrology
04/18/2000US6051282 Surface treatment of antireflective layer in chemical vapor deposition process
04/18/2000US6051281 Subjecting the substrate to the plasma processing in an atmosphere of the mixed gas of nitrogen gas and hydrogen gas, thereby nitriding a surface layer of the titanium film to form thereon a nitride layer
04/18/2000US6051276 Internally heated pyrolysis zone
04/18/2000US6051152 Process for making diamond and diamond-coated filaments
04/18/2000US6051122 Deposition shield assembly for a semiconductor wafer processing system
04/18/2000US6051120 Thin film forming apparatus
04/18/2000US6051071 Device for extracting gas from an oven for chemical vapor deposition or infiltration in an installation for fabricating composite material parts
04/18/2000US6051063 Diamond wafer and method of producing a diamond wafer
04/18/2000US6051053 Trapping device and method of operation therefor
04/18/2000US6050506 Pattern of apertures in a showerhead for chemical vapor deposition
04/18/2000US6050287 Purge system and purge joint
04/18/2000US6050217 Parallel plate plasma CVD apparatus
04/18/2000US6050216 Showerhead electrode for plasma processing
04/18/2000CA2061302C Method of making synthetic diamond film
04/13/2000WO2000021139A1 Low stress polysilicon film and method for producing same
04/13/2000WO2000021120A1 Method and apparatus for depositing material upon a semiconductor wafer using a transition chamber of a multiple chamber semiconductor wafer processing system
04/13/2000WO2000020900A2 Silicon carbide for use as a low dielectric constant anti-reflective coating and its deposition method
04/13/2000WO2000020656A1 A method of metallizing the surface of a solid polymer substrate and the product obtained
04/13/2000WO2000020655A1 Internally heated exhaust unit
04/13/2000WO2000020346A1 Method and device for spraying of a material
04/13/2000WO2000007228A8 Epitaxial growth furnace