Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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06/13/2000 | US6074512 Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
06/13/2000 | US6074487 Unit for vaporizing liquid materials |
06/13/2000 | US6074486 Apparatus and method for manufacturing a semiconductor device having hemispherical grains |
06/13/2000 | US6074202 Apparatus for manufacturing a semiconductor material |
06/13/2000 | US6073576 Substrate edge seal and clamp for low-pressure processing equipment |
06/08/2000 | WO2000032841A1 Apparatus for forming thin film |
06/08/2000 | WO2000032840A1 Method and system for producing semiconductor crystals using temperature management |
06/08/2000 | WO2000032608A1 Complex compound of an element of sub-group iv |
06/08/2000 | WO2000023201A9 Superalloy component with abrasive grit-free coating |
06/08/2000 | WO2000016377A3 Method for forming a three-component nitride film containing metal and silicon |
06/08/2000 | WO2000015881A3 Gas feeding system for chemical vapor deposition reactor and method of controlling the same |
06/08/2000 | WO2000007223A3 Method for reducing particle emission or absorption on a surface |
06/08/2000 | WO2000007221A3 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots |
06/08/2000 | DE19952316A1 Verfahren zum Ausbilden einer Siliziumdioxidschicht und Verfahren zum Herstellen eines Dünnfilmtransistors dadurch A method of forming a silicon dioxide layer and method for manufacturing a thin film transistor characterized |
06/07/2000 | EP1006761A1 Plasma processor |
06/07/2000 | EP1006569A2 Deposition of an insulating film |
06/07/2000 | EP1006566A2 Film forming equipment |
06/07/2000 | EP1006219A1 Ultrasonic level sensing in a chemical refill system |
06/07/2000 | EP1006212A1 Film forming method |
06/07/2000 | EP1005581A1 Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures |
06/07/2000 | EP0889975B1 Deposition method and use of a precursor therefor |
06/07/2000 | CN1255554A Deposited film forming system and method thereof |
06/07/2000 | CN1053230C Microwave enhanced CVD system and method under magnetic field |
06/07/2000 | CN1053229C Microwave enhanced CVD system and method under magnetic field |
06/06/2000 | US6072939 Solid precursor injector apparatus |
06/06/2000 | US6072227 Low power method of depositing a low k dielectric with organo silane |
06/06/2000 | US6072207 Process for fabricating layered superlattice materials and making electronic devices including same |
06/06/2000 | US6072160 Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection |
06/06/2000 | US6072147 Plasma processing system |
06/06/2000 | US6071808 Method of passivating copper interconnects in a semiconductor |
06/06/2000 | US6071797 Method for forming amorphous carbon thin film by plasma chemical vapor deposition |
06/06/2000 | US6071765 Method of forming polycrystalline silicon layer on substrate and surface treatment apparatus thereof |
06/06/2000 | US6071676 Integrated circuit formed by exposing to radiation or particle beam through mask an organometallic fluoride compound coated onto substrate, removing residue and unexposed compound to leave submicron patterned deposit |
06/06/2000 | US6071573 Vapor deposition of fluorinated silicon oxide, precoating interiors |
06/06/2000 | US6071572 Forming tin thin films using remote activated specie generation |
06/06/2000 | US6071562 Process for depositing titanium nitride films |
06/06/2000 | US6071561 Chemical vapor deposition of fluorine-doped zinc oxide |
06/06/2000 | US6071552 Insitu formation of TiSi2 /TiN bi-layer structures using self-aligned nitridation treatment on underlying CVD-TiSi2 layer |
06/06/2000 | US6071353 Depositing a polysilicon layer on inner surface of processing chamber, depositing a silicon nitride layer on semiconductor substrate(s) in chamber, removing semiconductor substrate with nitride layer, etching to clean processing chamber |
06/06/2000 | US6071351 Low temperature chemical vapor deposition and etching apparatus and method |
06/06/2000 | US6071349 Gas supplying apparatus and vapor-phase growth plant |
06/06/2000 | US6071343 Heat treatment jig and method of producing the same |
06/06/2000 | US6071109 Method of making AlInSb by metal-organic chemical vapor deposition |
06/06/2000 | US6071103 Member having sliding contact surface, compressor and rotary compressor |
06/06/2000 | US6070599 Non-plasma halogenated gas flow to prevent metal residues |
06/06/2000 | US6070552 Substrate processing apparatus |
06/06/2000 | US6070551 Deposition chamber and method for depositing low dielectric constant films |
06/06/2000 | US6070550 Apparatus for the stabilization of halogen-doped films through the use of multiple sealing layers |
06/02/2000 | WO2000031790A1 Process for forming a sion/teos interlevel dielectric with after-treatment of the cvd silicum oxynitride layer |
06/02/2000 | WO2000031782A1 Silane-based oxide anti-reflective coating for patterning of metal features in semiconductor manufacturing |
06/02/2000 | WO2000031773A1 Method and apparatus for optical detection of effluent composition |
06/02/2000 | WO2000031323A1 Method and arrangement for deposition of a semiconductor material |
06/02/2000 | WO2000031322A1 Method for epitaxial growth on a substrate |
06/02/2000 | WO2000031317A1 Reactor and method for chemical vapour deposition |
06/02/2000 | WO2000031314A1 Diamond coated cutting tools and method of manufacture |
06/02/2000 | WO2000013207A3 Method for forming a metal film |
06/02/2000 | CA2348851A1 Diamond coated cutting tools and method of manufacture |
05/31/2000 | EP1004688A1 Substrate processing reactors |
05/31/2000 | EP1004686A2 High temperature vapor coating container |
05/31/2000 | EP1004132A1 A carbon film for field emission devices |
05/31/2000 | EP0885315B1 Misted precursor deposition apparatus and method with improved mist and mist flow |
05/31/2000 | EP0764346A4 High vertical aspect ratio thin film structures |
05/31/2000 | CN1255170A Process of diamond growth from C70 |
05/30/2000 | US6069094 Method for depositing a thin film |
05/30/2000 | US6069093 Process of forming metal films and multi layer structure |
05/30/2000 | US6069072 CVD tin barrier layer for reduced electromigration of aluminum plugs |
05/30/2000 | US6069053 Formation of conductive rugged silicon |
05/30/2000 | US6068912 Platible non-metallic filler material for metallurgical screening paste |
05/30/2000 | US6068889 Mixing methyl acetylene/propadiene gas at a first pressure with oxygen gas at a second pressure, directing resulting mixture to and through nozzle and toward surface of glass forming apparatus, igniting to form flame, depositing graphite |
05/30/2000 | US6068884 Method of making low κ dielectric inorganic/organic hybrid films |
05/30/2000 | US6068883 Distributing diamond grains on a substrate at a high density and growing the diamond film on said substrate by using said diamond grains as growth nuclei |
05/30/2000 | US6068784 In vacuum; inductive coupling; controlling temperature |
05/30/2000 | US6068729 Two step process for cleaning a substrate processing chamber |
05/30/2000 | US6068704 Transfer arm apparatus and semiconductor processing system using the same |
05/30/2000 | US6068703 Gas mixing apparatus and method |
05/30/2000 | US6068685 Semiconductor manufacturing system with getter safety device |
05/30/2000 | US6068016 Modular fluid flow system with integrated pump-purge |
05/30/2000 | US6067999 Controlling the temperature in processing chamber of deposition tool, supplying nitrogen trifluoride in the chamber, high pressurizing, establishing plasma in the chamber to ionize nitrogen trifluoride, then low pressurizing |
05/25/2000 | WO2000030158A1 Gas distribution system for a cvd processing chamber |
05/25/2000 | WO2000030155A1 Buffer chamber and method for integrating physical and chemical vapor deposition chambers together in a processing system |
05/25/2000 | WO2000030148A1 Integrated power modules for plasma processing systems |
05/25/2000 | WO2000030141A1 Self-oriented bundles of carbon nanotubes and method of making same |
05/25/2000 | WO2000029642A1 Removing oxides or other reducible contaminants from a substrate by plasma treatment |
05/25/2000 | WO2000029637A1 Diffusion barrier materials with improved step coverage |
05/25/2000 | WO2000029330A1 Thin hafnium oxide film and method for depositing same |
05/25/2000 | WO1999063590A9 A method for treating a deposited film for resistivity reduction |
05/25/2000 | DE19855021C1 Semiconductor material is deposited by chemical gas phase transport with horizontal and vertical close spacing of the substrate and source material during deposition |
05/25/2000 | DE19853605A1 Verfahren und Anordnung zur Herstellung einer Leuchtschicht Method and apparatus for producing a luminescent layer |
05/24/2000 | EP1003197A2 Substrate for electron source, electron source and image forming apparatus, and manufacturing method thereof |
05/24/2000 | EP1003196A1 Carbon material, method for manufacturing the same material, field-emission type cold cathode using the same material and method for manufacturing the same cathode |
05/24/2000 | EP1002964A1 Rolling bearing with coated element |
05/24/2000 | EP1002887A1 Method and apparatus for producing a luminescent layer |
05/24/2000 | EP1002573A2 The combinatorial synthesis of novel materials |
05/24/2000 | EP1002572A2 The combinatorial synthesis of novel materials |
05/24/2000 | EP1002142A1 Method and apparatus for reducing deposition of contaminants |
05/24/2000 | EP1002141A1 Component with high temperature resistance and method for producing an anti-oxidation element |
05/24/2000 | EP0879303B1 Device and process for coating substrates |
05/24/2000 | EP0876516B1 Process for producing wear-resistant boride layers on metal material surfaces |
05/24/2000 | EP0832407A4 Passive gas substrate thermal conditioning apparatus and method |
05/24/2000 | EP0742847B1 A method of depositing tungsten nitride using a source gas comprising silicon |