Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
06/2000
06/13/2000US6074512 Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
06/13/2000US6074487 Unit for vaporizing liquid materials
06/13/2000US6074486 Apparatus and method for manufacturing a semiconductor device having hemispherical grains
06/13/2000US6074202 Apparatus for manufacturing a semiconductor material
06/13/2000US6073576 Substrate edge seal and clamp for low-pressure processing equipment
06/08/2000WO2000032841A1 Apparatus for forming thin film
06/08/2000WO2000032840A1 Method and system for producing semiconductor crystals using temperature management
06/08/2000WO2000032608A1 Complex compound of an element of sub-group iv
06/08/2000WO2000023201A9 Superalloy component with abrasive grit-free coating
06/08/2000WO2000016377A3 Method for forming a three-component nitride film containing metal and silicon
06/08/2000WO2000015881A3 Gas feeding system for chemical vapor deposition reactor and method of controlling the same
06/08/2000WO2000007223A3 Method for reducing particle emission or absorption on a surface
06/08/2000WO2000007221A3 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots
06/08/2000DE19952316A1 Verfahren zum Ausbilden einer Siliziumdioxidschicht und Verfahren zum Herstellen eines Dünnfilmtransistors dadurch A method of forming a silicon dioxide layer and method for manufacturing a thin film transistor characterized
06/07/2000EP1006761A1 Plasma processor
06/07/2000EP1006569A2 Deposition of an insulating film
06/07/2000EP1006566A2 Film forming equipment
06/07/2000EP1006219A1 Ultrasonic level sensing in a chemical refill system
06/07/2000EP1006212A1 Film forming method
06/07/2000EP1005581A1 Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
06/07/2000EP0889975B1 Deposition method and use of a precursor therefor
06/07/2000CN1255554A Deposited film forming system and method thereof
06/07/2000CN1053230C Microwave enhanced CVD system and method under magnetic field
06/07/2000CN1053229C Microwave enhanced CVD system and method under magnetic field
06/06/2000US6072939 Solid precursor injector apparatus
06/06/2000US6072227 Low power method of depositing a low k dielectric with organo silane
06/06/2000US6072207 Process for fabricating layered superlattice materials and making electronic devices including same
06/06/2000US6072160 Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection
06/06/2000US6072147 Plasma processing system
06/06/2000US6071808 Method of passivating copper interconnects in a semiconductor
06/06/2000US6071797 Method for forming amorphous carbon thin film by plasma chemical vapor deposition
06/06/2000US6071765 Method of forming polycrystalline silicon layer on substrate and surface treatment apparatus thereof
06/06/2000US6071676 Integrated circuit formed by exposing to radiation or particle beam through mask an organometallic fluoride compound coated onto substrate, removing residue and unexposed compound to leave submicron patterned deposit
06/06/2000US6071573 Vapor deposition of fluorinated silicon oxide, precoating interiors
06/06/2000US6071572 Forming tin thin films using remote activated specie generation
06/06/2000US6071562 Process for depositing titanium nitride films
06/06/2000US6071561 Chemical vapor deposition of fluorine-doped zinc oxide
06/06/2000US6071552 Insitu formation of TiSi2 /TiN bi-layer structures using self-aligned nitridation treatment on underlying CVD-TiSi2 layer
06/06/2000US6071353 Depositing a polysilicon layer on inner surface of processing chamber, depositing a silicon nitride layer on semiconductor substrate(s) in chamber, removing semiconductor substrate with nitride layer, etching to clean processing chamber
06/06/2000US6071351 Low temperature chemical vapor deposition and etching apparatus and method
06/06/2000US6071349 Gas supplying apparatus and vapor-phase growth plant
06/06/2000US6071343 Heat treatment jig and method of producing the same
06/06/2000US6071109 Method of making AlInSb by metal-organic chemical vapor deposition
06/06/2000US6071103 Member having sliding contact surface, compressor and rotary compressor
06/06/2000US6070599 Non-plasma halogenated gas flow to prevent metal residues
06/06/2000US6070552 Substrate processing apparatus
06/06/2000US6070551 Deposition chamber and method for depositing low dielectric constant films
06/06/2000US6070550 Apparatus for the stabilization of halogen-doped films through the use of multiple sealing layers
06/02/2000WO2000031790A1 Process for forming a sion/teos interlevel dielectric with after-treatment of the cvd silicum oxynitride layer
06/02/2000WO2000031782A1 Silane-based oxide anti-reflective coating for patterning of metal features in semiconductor manufacturing
06/02/2000WO2000031773A1 Method and apparatus for optical detection of effluent composition
06/02/2000WO2000031323A1 Method and arrangement for deposition of a semiconductor material
06/02/2000WO2000031322A1 Method for epitaxial growth on a substrate
06/02/2000WO2000031317A1 Reactor and method for chemical vapour deposition
06/02/2000WO2000031314A1 Diamond coated cutting tools and method of manufacture
06/02/2000WO2000013207A3 Method for forming a metal film
06/02/2000CA2348851A1 Diamond coated cutting tools and method of manufacture
05/2000
05/31/2000EP1004688A1 Substrate processing reactors
05/31/2000EP1004686A2 High temperature vapor coating container
05/31/2000EP1004132A1 A carbon film for field emission devices
05/31/2000EP0885315B1 Misted precursor deposition apparatus and method with improved mist and mist flow
05/31/2000EP0764346A4 High vertical aspect ratio thin film structures
05/31/2000CN1255170A Process of diamond growth from C70
05/30/2000US6069094 Method for depositing a thin film
05/30/2000US6069093 Process of forming metal films and multi layer structure
05/30/2000US6069072 CVD tin barrier layer for reduced electromigration of aluminum plugs
05/30/2000US6069053 Formation of conductive rugged silicon
05/30/2000US6068912 Platible non-metallic filler material for metallurgical screening paste
05/30/2000US6068889 Mixing methyl acetylene/propadiene gas at a first pressure with oxygen gas at a second pressure, directing resulting mixture to and through nozzle and toward surface of glass forming apparatus, igniting to form flame, depositing graphite
05/30/2000US6068884 Method of making low κ dielectric inorganic/organic hybrid films
05/30/2000US6068883 Distributing diamond grains on a substrate at a high density and growing the diamond film on said substrate by using said diamond grains as growth nuclei
05/30/2000US6068784 In vacuum; inductive coupling; controlling temperature
05/30/2000US6068729 Two step process for cleaning a substrate processing chamber
05/30/2000US6068704 Transfer arm apparatus and semiconductor processing system using the same
05/30/2000US6068703 Gas mixing apparatus and method
05/30/2000US6068685 Semiconductor manufacturing system with getter safety device
05/30/2000US6068016 Modular fluid flow system with integrated pump-purge
05/30/2000US6067999 Controlling the temperature in processing chamber of deposition tool, supplying nitrogen trifluoride in the chamber, high pressurizing, establishing plasma in the chamber to ionize nitrogen trifluoride, then low pressurizing
05/25/2000WO2000030158A1 Gas distribution system for a cvd processing chamber
05/25/2000WO2000030155A1 Buffer chamber and method for integrating physical and chemical vapor deposition chambers together in a processing system
05/25/2000WO2000030148A1 Integrated power modules for plasma processing systems
05/25/2000WO2000030141A1 Self-oriented bundles of carbon nanotubes and method of making same
05/25/2000WO2000029642A1 Removing oxides or other reducible contaminants from a substrate by plasma treatment
05/25/2000WO2000029637A1 Diffusion barrier materials with improved step coverage
05/25/2000WO2000029330A1 Thin hafnium oxide film and method for depositing same
05/25/2000WO1999063590A9 A method for treating a deposited film for resistivity reduction
05/25/2000DE19855021C1 Semiconductor material is deposited by chemical gas phase transport with horizontal and vertical close spacing of the substrate and source material during deposition
05/25/2000DE19853605A1 Verfahren und Anordnung zur Herstellung einer Leuchtschicht Method and apparatus for producing a luminescent layer
05/24/2000EP1003197A2 Substrate for electron source, electron source and image forming apparatus, and manufacturing method thereof
05/24/2000EP1003196A1 Carbon material, method for manufacturing the same material, field-emission type cold cathode using the same material and method for manufacturing the same cathode
05/24/2000EP1002964A1 Rolling bearing with coated element
05/24/2000EP1002887A1 Method and apparatus for producing a luminescent layer
05/24/2000EP1002573A2 The combinatorial synthesis of novel materials
05/24/2000EP1002572A2 The combinatorial synthesis of novel materials
05/24/2000EP1002142A1 Method and apparatus for reducing deposition of contaminants
05/24/2000EP1002141A1 Component with high temperature resistance and method for producing an anti-oxidation element
05/24/2000EP0879303B1 Device and process for coating substrates
05/24/2000EP0876516B1 Process for producing wear-resistant boride layers on metal material surfaces
05/24/2000EP0832407A4 Passive gas substrate thermal conditioning apparatus and method
05/24/2000EP0742847B1 A method of depositing tungsten nitride using a source gas comprising silicon