Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
05/2000
05/24/2000CN1254061A Rolling bearing with coating layer portion
05/24/2000CN1253878A Thermal resistance coating system and its material
05/24/2000CA2254460A1 Systems and methods for the combinatorial synthesis of novel materials
05/23/2000US6066892 Copper alloy seed layer for copper metallization in an integrated circuit
05/23/2000US6066836 High temperature resistive heater for a process chamber
05/23/2000US6066508 Treating a semiconductor integrated circuit wafer, as housed in a reaction furnace, in a hydrogen gas, discharging hydrogen gas form outside of the furnace, converting hydrogen into water by treating the gas with oxidation catalyst
05/23/2000US6066399 A graded structure in which a ratio of diamond and graphite bonding decreases in its thickness direction from the interface to a minimum in the interior between said interface surface and then increases toward the surface; adhesion
05/23/2000US6066392 Vacuum containers, semiconductors; anodic oxidation film on aluminum alloy
05/23/2000US6066366 Method for depositing uniform tungsten layers by CVD
05/23/2000US6066358 Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer
05/23/2000US6066209 Cold trap
05/23/2000US6066204 High pressure MOCVD reactor system
05/23/2000US6066196 Method for the chemical vapor deposition of copper-based films and copper source precursors for the same
05/23/2000US6065489 Ozone flow rate control device
05/23/2000US6065425 Plasma process apparatus and plasma process method
05/23/2000CA2051378C Method for producing a heatable and refrigerable element for a system handling small quantities of liquid, and an element manufactured by the method
05/18/2000WO2000028107A1 Substituted phenylethylene precursor deposition method
05/18/2000WO2000028106A1 Polycrystalline diamond member and method of making the same
05/18/2000WO2000000664A9 Susceptor for barrel reactor
05/18/2000DE19847101C1 CVD reactor used in the production of the semiconductor wafers has upper and lower reactor chambers provided with a gas feed line and gas removal line
05/18/2000CA2346945A1 Polycrystalline diamond member and method of making the same
05/17/2000EP1001455A1 Apparatus for protecting a substrate support surface and method of fabricating same
05/17/2000EP1001449A1 Deposited film forming system and process
05/17/2000EP1001448A2 Thin film DC plasma processing system
05/17/2000EP1001051A1 Thin film forming method and thin film forming apparatus
05/17/2000EP1001050A2 Process for internal coating of capillaries and use of such capillaries
05/17/2000EP1001049A1 Process for purification of organometallic compounds
05/17/2000EP1001048A2 Hard carbon film and surface-acoustic-wave substrate
05/17/2000EP1001047A2 Alkene ligand precursor and synthesis method
05/17/2000EP1000948A2 Copper containing substituted phenylethylene precursor and synthesis method
05/17/2000EP1000947A2 Metal containing substituted ethylene precursor and synthesis method
05/17/2000EP1000291A1 Fluid storage and dispensing system
05/17/2000EP1000182A2 Thin films
05/16/2000US6064847 Developing device
05/16/2000US6064800 Apparatus for uniform gas and radiant heat dispersion for solid state fabrication processes
05/16/2000US6063951 Volatile magnesium alkylaluminum alkoxide and deposition of magnesium aluminate film using same
05/16/2000US6063705 Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide
05/16/2000US6063514 Gas-tight article and a producing process thereof
05/16/2000US6063513 Silicon carbide(sic) top layer, surface processed to be a specular surface, and having a defect-free sic crystal layer at given depth from the specular surface; resistant to high energy beams for use such as reflecting mirrors
05/16/2000US6063443 Vapor deposition
05/16/2000US6063442 Bonding of porous materials to other materials utilizing chemical vapor deposition
05/16/2000US6063441 Vapor deposition
05/16/2000US6063440 Method for aligning a wafer
05/16/2000US6063236 Vacuum processing system and method of removing film deposited on inner face of vacuum vessel in the vacuum processing system
05/16/2000US6063233 Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
05/16/2000US6063203 Susceptor for plasma CVD equipment and process for producing the same
05/16/2000US6063202 Apparatus for backside and edge exclusion of polymer film during chemical vapor deposition
05/16/2000US6063199 Temperature controlled liner
05/16/2000US6063198 High pressure release device for semiconductor fabricating equipment
05/16/2000US6063197 Trap for capturing waste by-product generated by a chemical vapor deposition system
05/16/2000US6063196 Semiconductor processing chamber calibration tool
05/16/2000US6063186 Growth of very uniform silicon carbide epitaxial layers
05/16/2000US6063179 Nonselectively absorbing filmlike layer at least partially transparent to visible light
05/16/2000US6062869 Method of making a stacked thin film assembly
05/16/2000US6062851 Combination CVI/CVD and heat treat susceptor lid
05/16/2000US6062776 Coated cutting insert and method of making it
05/16/2000US6062163 Plasma initiating assembly
05/16/2000CA2114971C Coating apparatus, method of coating glass, compounds and compositions for coating glass and coated glass substrates
05/11/2000WO2000027175A1 Adhesion-promoting layer for generating conductor structures with good adhesive properties on insulating material used in electronics
05/11/2000WO2000026974A2 Semiconductor processing chamber calibration tool
05/11/2000WO2000026952A1 Method for in-situ, post deposition surface passivation of a chemical vapor deposited film
05/11/2000WO2000026949A1 Semiconductor wafer and its manufacturing method
05/11/2000WO2000026948A1 Semiconductor wafer and vapor growth apparatus
05/11/2000WO2000026435A1 Apparatus and method for depositing low k dielectric materials
05/11/2000WO2000026434A1 Improved corrosion resistant coating
05/11/2000WO2000026433A2 Polycrystalline diamond layer with (100) texture
05/11/2000WO2000026432A1 Nickel carbonyl vapour deposition apparatus and process
05/11/2000WO2000026431A1 Gas cluster ion beams for formation of nitride films
05/11/2000WO2000008225A3 Organocopper precursors for chemical vapor deposition
05/11/2000WO2000000992A3 Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
05/11/2000DE19851824A1 Process for reducing deposits in a CVD reactor comprises rinsing the chamber walls with rinsing gas
05/11/2000DE19851579A1 Metallized plastic for metallizing decorative plastics, for shower fittings, and as housings for computers and mobile phones shows strong adhesion of the metal coating to the plastics surface especially when activated
05/10/2000EP0999293A1 Aluminium oxide-coated article
05/10/2000EP0999292A1 Transport of gases pumped in a vacuum pump or in pipings
05/10/2000EP0998594A1 Method and apparatus for fabrication of thin films by chemical vapor deposition
05/10/2000EP0953214A4 Semiconductor having large volume fraction of intermediate range order material
05/10/2000CN1252893A Method for producing silicon oxide film, method for making semiconductor device, semiconductor device, display, and infrared irradiating device
05/09/2000US6060836 Plasma generating apparatus and ion source using the same
05/09/2000US6060755 Aluminum-doped zirconium dielectric film transistor structure and deposition method for same
05/09/2000US6060405 Method of deposition on wafer
05/09/2000US6060397 Flowing nitrogen, oxygen and perfluoroethane
05/09/2000US6060391 Monitoring partial pressure of organic metal raw material gas depending on emission intensity of light
05/09/2000US6060132 Forming silicon oxynitride and silicon nitride coatings without contaminating photoresist by holding wafer in vacuum to prevent explosion, adding gas mixture of silane, oxygen, nitrogen and subjecting to radio frequency electrical signal
05/09/2000US6060131 Method of forming a thin film by plasma chemical vapor deposition
05/09/2000US6060129 Method for bulk coating using a plasma process
05/09/2000US6060119 Compound tertiarybutylbis-(dimethylamino)phosphine and a process for preparing the compound tertiarybutylbis-(dimethylamino)phosphine
05/09/2000US6059885 Vapor deposition apparatus and method for forming thin film
05/09/2000US6058751 Free-wheeling lock
05/09/2000US6058740 Glass substrate deposition system having lateral alignment mechanism
05/04/2000WO2000025354A1 Polycrystalline silicon thin film forming method and thin film forming apparatus
05/04/2000WO2000025347A1 Plasma treatment apparatus and method
05/04/2000DE19850346A1 Diamantschicht mit optimierten Oberflächeneigenschaften Diamond film with optimized surface characteristics
05/03/2000EP0997554A1 Plasma cvd method, plasma cvd apparatus, and electrode
05/03/2000EP0997553A1 Sealed reactant gas inlet for a cvi/cvd furnace
05/03/2000EP0997551A2 Transparent barrier film system
05/03/2000EP0996973A1 Improved deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber
05/03/2000EP0996972A1 Method for targeted production on n-type conductive areas in diamond layers by ion implantation
05/03/2000EP0996966A1 Fluid delivery system and method
05/03/2000EP0996965A1 Modular architecture for semiconductor wafer fabrication equipment
05/03/2000EP0996964A1 Apparatus and method for delivering a gas