Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
08/2000
08/02/2000CN1261829A Method and apparatus for gas phase coating complex internal surfaces of hollow articles
08/01/2000US6097079 Boron implanted dielectric structure
08/01/2000US6096913 Suppressing formation of a second metal-ligand complex of the metal with a higher valence by adding the elemental form of the metal to the synthesis of the first metal-ligand complex.
08/01/2000US6096661 Method for depositing silicon dioxide using low temperatures
08/01/2000US6096436 A coating on at least a portion of a substrate comprising a base layer, a boron and carbon containing intermediated layer and a carbon, boron and nitrogen containing layer adjacent to the intermediate layer
08/01/2000US6096390 Method of forming a hard carbon film over the inner surface of a guide bush
08/01/2000US6096389 Method and apparatus for forming a deposited film using a microwave CVD process
08/01/2000US6096377 Subjecting the substrate to a selective tungsten carbide etching step, and selective cobalt etching step
08/01/2000US6096371 Methods and apparatus for reducing reflection from optical substrates
08/01/2000US6096149 Method for fabricating adhesion-resistant micromachined devices
08/01/2000US6096135 Method and apparatus for reducing contamination of a substrate in a substrate processing system
08/01/2000US6096134 Liquid delivery system
08/01/2000US6096133 Chemical vapor deposition apparatus
08/01/2000US6095806 Semiconductor wafer boat and vertical heat treating system
08/01/2000US6095158 Anhydrous HF in-situ cleaning process of semiconductor processing chambers
08/01/2000US6095085 Photo-assisted remote plasma apparatus and method
08/01/2000US6095084 High density plasma process chamber
07/2000
07/27/2000WO2000044047A1 Microelectronic structure
07/27/2000WO2000044033A1 Method and apparatus for film deposition
07/27/2000WO2000043577A1 Cdv method of and reactor for silicon carbide monocrystal growth
07/27/2000WO2000043568A1 Microwave plasma cvd apparatus
07/27/2000WO2000043567A1 Film forming device
07/27/2000WO2000043566A1 Plasma processing system and method
07/27/2000WO2000043564A1 Method of, and apparatus for, depositing materials
07/27/2000WO2000000992A9 Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
07/27/2000DE19959845A1 Plasma generator, for plasma-assisted coating of a tubular component, comprises an induction coil around a protective tube with end closure flanges enclosing the component
07/27/2000DE19902000A1 Production of metal-coated hard materials used in cutting, boring, sawing and grinding tools comprises producing the metal layer by decomposing metal carbonyls in the presence of the hard material
07/26/2000EP1022559A1 System and method for identifying gaseous effluents, and equipment provided with such a system
07/26/2000EP1022354A2 Process for coating plastic substrates
07/26/2000EP1022353A1 Process for manufacturing metal coated hard materials
07/26/2000EP1021592A1 Jet plasma process and apparatus for deposition of coatings and coatings thus obtained
07/26/2000EP1021591A1 Combustion chemical vapor deposition of phosphate films and coatings
07/26/2000EP1021589A1 Method of chemical vapor deposition of metal films
07/26/2000EP1021588A1 Fluid delivery apparatus and method
07/26/2000EP1021587A1 Automatic positive pressure seal access door
07/26/2000EP1021586A1 A rapid thermal processing barrel reactor for processing substrates
07/26/2000EP0583374B1 Method and apparatus for plasma deposition
07/25/2000US6093660 Inductively coupled plasma chemical vapor deposition technology
07/25/2000US6093645 Elimination of titanium nitride film deposition in tungsten plug technology using PE-CVD-TI and in-situ plasma nitridation
07/25/2000US6093638 Method of forming an electrical contact in a substrate
07/25/2000US6093479 Coated hard alloy blade member
07/25/2000US6093297 Method for depositing solid electrolyte layer
07/25/2000US6093281 Baffle plate design for decreasing conductance lost during precipitation of polymer precursors in plasma etching chambers
07/25/2000US6093260 Surface alloyed high temperature alloys
07/25/2000US6093253 Method and a device for epitaxial growth of objects by chemical vapor deposition
07/25/2000US6093252 Process chamber with inner support
07/25/2000US6093228 Method and device for collecting by-products individually
07/25/2000US6092486 Plasma processing apparatus and plasma processing method
07/25/2000CA2035991C Method of coating steel substrate using low temperature plasma processes and priming
07/20/2000WO2000042652A1 Semiconductor device and its production method
07/20/2000WO2000042236A2 Processing system and method for chemical vapor deposition
07/20/2000WO2000042235A1 Film forming device
07/20/2000WO2000042234A1 Material fabrication
07/20/2000WO2000042232A1 Tungsten layer forming method and laminate structure of tungsten layer
07/20/2000WO2000041983A1 Densification of porous bodies
07/20/2000WO2000003421A9 Improved endpoint detection for substrate fabrication processes
07/20/2000WO2000000767A9 System for supply of multiple chemicals to a process tool
07/20/2000DE19901834A1 Verfahren zum Beschichten von Substraten aus Kunststoff A process for coating substrates of plastic
07/20/2000CA2359822A1 Material fabrication
07/19/2000EP1020236A2 Cleaning gas and cleaning method
07/19/2000EP1019956A1 Control of semiconductor device isolation properties through incorporation of fluorine in peteos films
07/19/2000EP1019945A1 Method and device for surface-treating substrates
07/19/2000EP1019944A1 Method and apparatus for treating the inside surface of plastic bottles in a plasma enhanced process
07/19/2000EP1019943A1 Device and method for treating the inside surface of a plastic container with a narrow opening in a plasma enhanced process
07/19/2000EP1019563A1 Dual frequency excitation of plasma for film deposition
07/19/2000EP1019562A1 Plasma enhanced chemical deposition with low vapor pressure compounds
07/19/2000EP1019553A1 Method for dissociating metals or dissociating metal compounds
07/19/2000EP1019180A1 Ampule with integral filter
07/19/2000EP1017641A4 Method for lubricating glass molds, plungers and the like
07/19/2000EP0820424B1 Method for the chemical vapour infiltration of a material consisting of carbon and silicon and/or boron
07/19/2000EP0800490B1 Process for producing preforms for optical fibres
07/19/2000EP0419507B1 Dry exhaust gas conditioning
07/19/2000CN1260843A Method of coating edges with diamond-like carbon
07/19/2000CN1260767A Photocatalytic-activated self-cleaning article and method of making same
07/19/2000CN1260407A Liquid conveying system
07/19/2000CN1054656C Method of cleaning vacuum processing apparatus
07/19/2000CN1054652C Apparatus for rapid plasma treatments and method
07/18/2000US6091122 Fabrication of mid-cap metal gates compatible with ultra-thin dielectrics
07/18/2000US6091045 Plasma processing apparatus utilizing a microwave window having a thinner inner area
07/18/2000US6090964 Organocuprous precursors for chemical vapor deposition of a copper film
07/18/2000US6090963 Cuprous hexafluoroacetonate complex with olefin ligand, chemical vapor deposition precursor
07/18/2000US6090960 Cuprous (hexafluoroacetylacetonate) complex with a methoxysilylolefin
07/18/2000US6090725 Method for preventing bubble defects in BPSG film
07/18/2000US6090709 Nitriding from titanium tetrahalide; hydrogen halide or ammonium halide by-product formation
07/18/2000US6090706 Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein
07/18/2000US6090705 Method of eliminating edge effect in chemical vapor deposition of a metal
07/18/2000US6090702 Embedded electroconductive layer and method for formation thereof
07/18/2000US6090675 Formation of dielectric layer employing high ozone:tetraethyl-ortho-silicate ratios during chemical vapor deposition
07/18/2000US6090530 Heating substrate using thermal energy in pressurized procesing chamber; applying electromagnetic energy to electrode to strike a plasma to plasma-polymerize precursor gas methylsilane to deposit polymer film on substrate
07/18/2000US6090490 Substrate having thereon leveling plastic coating, decorative zirconium compound layer, protective silicone coating
07/18/2000US6090476 Multilayer coated cutting tool comprising a cemented carbide body with at least one sintered-on inlay containing polycrystalline cubic boron nitride forming at least one cutting edge
07/18/2000US6090458 Method and apparatus for film formation by chemical vapor deposition
07/18/2000US6090455 Strontium, bismuth, tantalum thin film
07/18/2000US6090442 Method of growing films on substrates at room temperatures using catalyzed binary reaction sequence chemistry
07/18/2000US6090358 Crystalline Six Cy Nz and method for synthesis
07/18/2000US6090212 Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate
07/18/2000US6090211 Apparatus and method for forming semiconductor thin layer
07/18/2000US6090210 Multi-zone gas flow control in a process chamber
07/18/2000US6090208 Prevention of clogging in CVD apparatus
07/18/2000US6090206 Throttle valve providing enhanced cleaning