Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
08/2000
08/22/2000US6106678 Method of high density plasma CVD gap-filling
08/22/2000US6106677 Method of creating low resistance contacts in high aspect ratio openings by resputtering
08/22/2000US6106659 Treater systems and methods for generating moderate-to-high-pressure plasma discharges for treating materials and related treated materials
08/22/2000US6106634 Preheating
08/22/2000US6106631 Plasma processing apparatus
08/22/2000US6106630 Ceramic-coated heating assembly for high temperature processing chamber
08/22/2000US6106628 Heater unit for chemical vapor deposition systems
08/22/2000US6106626 Apparatus and method for preventing chamber contamination
08/22/2000US6106625 Reactor useful for chemical vapor deposition of titanium nitride
08/22/2000US6105534 Apparatus for plasma jet treatment of substrates
08/22/2000US6105518 Durable plasma treatment apparatus and method
08/22/2000US6105435 Circuit and apparatus for verifying a chamber seal, and method of depositing a material onto a substrate using the same
08/17/2000WO2000048435A1 Method of plasma enhanced chemical vapor deposition of diamond
08/17/2000WO2000048238A1 Multilayer structure with controlled internal stresses and method for making same
08/17/2000WO2000048051A1 Method of regulating a high temperature gaseous phase process and use of said method
08/17/2000WO2000047798A1 Method and installation for forming a deposit on a substrate
08/17/2000WO2000047797A1 Low pressure chemical vapour deposition of titanium dioxide
08/17/2000WO2000047796A1 Tungsten carbide coatings and method for producing the same
08/17/2000WO2000047795A1 Method of hot-filament chemical vapor deposition of diamond
08/17/2000WO2000047531A1 METHOD FOR PRODUCING AN ANHYDRITE III OR α BASED HYDRAULIC BONDING AGENT
08/17/2000WO2000047404A1 Chemical vapor deposition of tungsten nitride
08/17/2000WO2000047402A1 Fluorine-doped diamond-like coatings
08/17/2000WO2000047290A1 Highly durable and abrasion resistant composite diamond-like carbon decorative coatings with controllable color for metal substrates
08/17/2000DE19905697A1 Production of adhesion promoting layer on substrate surface for bonded joints and coatings comprises deposition of silicon oxide(s) layer by means of flame treatment using organosilicon compound
08/16/2000EP1028458A2 Chemical vapor deposition of silicate high dielectric constant materials
08/16/2000EP1028457A1 Method of plasma processing
08/16/2000EP1028175A1 Accelerated plasma cleaning
08/16/2000EP1027482A1 Apparatus and method for the in-situ generation of dopants
08/16/2000EP1027475A1 Large area microwave plasma apparatus with adaptable applicator
08/16/2000EP1027473A1 Mini-batch process chamber
08/16/2000EP1027169A2 Method for corrosion-resistant coating of metal substrates by means of plasma polymerisation
08/16/2000EP0628212B1 Dc power supply for a plasma processing system
08/16/2000CN1263569A Method and apparatus for fabrication of thin films by chemical vapor deposition
08/16/2000CN1263441A Ornamental stones
08/16/2000CN1263032A Transparent barrier-layer system
08/15/2000US6103639 Pretreatment of wafer surface bearing dielectric layer patterned with metal interconnects to strip any organic residue using ammonia and nitrous oxide plasma, then depositing silicon oxide buffer layer and silicon nitride
08/15/2000US6103601 Method and apparatus for improving film stability of halogen-doped silicon oxide films
08/15/2000US6103566 Method for manufacturing semiconductor integrated circuit device having a titanium electrode
08/15/2000US6103321 Method of manufacturing an ultraviolet resistant object
08/15/2000US6103304 Flowing a purge gas into reactor holes in the walls which have an inside dimension greater than the outer diameter of the substrate holder; uniform down-flow of purge gas prevents the retention/circulation of reaction gas in the dead space
08/15/2000US6103133 Manufacturing method of a diamond emitter vacuum micro device
08/15/2000US6103015 Symmetrical CVD coater with lower upstream exhaust toe
08/15/2000US6103014 Chemical vapor deposition chamber
08/15/2000US6103002 CVD method for forming oxide-system dielectric thin film
08/15/2000US6102993 Complexes
08/15/2000US6101973 Apparatus for reducing friction on polymeric surfaces
08/15/2000US6101972 Plasma processing system and method
08/15/2000US6101970 Plasma processing apparatus
08/15/2000US6101969 Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof
08/15/2000US6101844 Double wall reaction chamber glassware
08/15/2000US6101816 Fluid storage and dispensing system
08/15/2000CA2112308C Method of making white diamond film
08/10/2000WO2000047023A1 Method and apparatus for deposition of diamond-like carbon coatings from a hall-current ion source
08/10/2000WO2000046840A1 Cooled showerhead for rapid thermal processing (rtp) system
08/10/2000WO2000046420A1 Thermal barrier coating resistant to sintering
08/10/2000WO2000026433A3 Polycrystalline diamond layer with (100) texture
08/10/2000WO1999056057A9 Fluid storage and dispensing system
08/09/2000EP1026762A1 Chemical vapor deposited electrode component and method of manufacture
08/09/2000EP1025279A1 Introducing process fluid over rotating substrates
08/09/2000EP1025278A1 Vertically-stacked process reactor and cluster tool system for atomic layer deposition
08/09/2000EP1025277A1 Vacuum coating installation and coupling device
08/09/2000EP1025041A1 Method for fabricating silicon oxynitride
08/09/2000EP0946459B1 Method for chemical vapour infiltration of refractory substances, especially carbon and silicon carbide
08/09/2000CN1262710A Method for dissociating metals or metal compounds
08/09/2000CN1262342A Ruthenium film
08/08/2000USRE36810 Plasma processing apparatus and method
08/08/2000US6101085 High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film
08/08/2000US6100546 Bandgap light emitting materials, comprising gallium aresinide nitride and indium arsenide-nitiride, useful for semiconductor lasers with different emission wavelength within the lightwave spectrum from ultraviolet to infrared
08/08/2000US6100466 Method of forming microcrystalline silicon film, photovoltaic element, and method of producing same
08/08/2000US6100205 Intermetal dielectric layer formation with low dielectric constant using high density plasma chemical vapor deposition process
08/08/2000US6100105 Fabrication of InGaAlN based compound semiconductor device
08/08/2000US6099976 Thermally-insulating ceramic coating having a columnar morphology covering at least a part of said exterior surface and a diamond layer covering at least part of said ceramic coating
08/08/2000US6099966 Hydrocarbon gas and atomic hydrogen utilized in depositing diamond film on deposition target medium comprising a substrate having young's modulus of less than 50 gpa, a coating on said substrate comprising binder and oxide
08/08/2000US6099918 Method of preparing a poly-crystalline silicon film
08/08/2000US6099917 Pretreatment of oxide substrates and radiation reactive n2+ ion beams on oxide substrates
08/08/2000US6099904 Flowing a process gas comprising a tungsten-containing source, a group iii or v hydride and an additional reduction agent into said deposition zone, and stopping the flow of said hydride and increasing the pressure in said deposition zone
08/08/2000US6099903 MOCVD processes using precursors based on organometalloid ligands
08/08/2000US6099902 Method of determining a time to clean a low pressure chemical vapor deposition (LPCVD) system
08/08/2000US6099747 Grounding counter electrode and connecting substrate electrode to high frequence power source; introducing gas to form layer on wafer; chamber etching of apparatus; disconnecting from grounding and power; introducing fluorocarbon gas
08/08/2000US6099698 Having micro-waviness on a fabrication surface of a substrate for reducing dynamic friction and controlling head float,
08/08/2000US6099667 Uniformly discharging gas over the width of the steel substrate, and dissipating electrical power from the plasma discharges into the steel resulting in uniform heating
08/08/2000US6099653 Liquid reagent delivery system with constant thermal loading of vaporizer
08/08/2000US6099652 Apparatus and method for depositing a substance with temperature control
08/08/2000US6099651 Temperature controlled chamber liner
08/08/2000US6099650 Structure and method for reducing slip in semiconductor wafers
08/08/2000US6099649 Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal
08/08/2000US6099648 Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
08/08/2000US6099647 Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films
08/08/2000US6099598 Fabrication system and fabrication method
08/08/2000US6098964 Method and apparatus for monitoring the condition of a vaporizer for generating liquid chemical vapor
08/08/2000US6098637 In situ cleaning of the surface inside a vacuum processing chamber
08/08/2000US6098568 Mixed frequency CVD apparatus
08/03/2000WO2000045427A1 Method and apparatus for plasma processing
08/03/2000WO2000045422A2 Inflatable slit/gate valve
08/03/2000WO2000044679A1 Methods for manufacturing and depositing fine particles combining flame and laser beam
08/03/2000WO2000006794A9 Hardcoats for flat panel display substrates
08/03/2000WO2000003422A3 Gas flow control in a substrate processing system
08/02/2000EP1024524A2 Deposition of dielectric layers using supercritical CO2
08/02/2000EP1024210A1 Apparatus and method for producing tungsten nitride film
08/02/2000CN1261927A Apparatus and method for nucleotion and deposition of diamond using hot-filament DC plasma