Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
09/2000
09/05/2000US6113751 Electromagnetic beam assisted deposition method for depositing a material on an irradiated substrate
09/05/2000US6113732 Deposited film forming apparatus
09/05/2000US6113705 High-speed rotational vapor deposition apparatus and high-speed rotational vapor deposition thin film method
09/05/2000US6113704 Substrate-supporting device for semiconductor processing
09/05/2000US6113703 Method and apparatus for processing the upper and lower faces of a wafer
09/05/2000US6113702 Wafer support system
09/05/2000US6113701 Semiconductor device, manufacturing method, and system
09/05/2000US6113700 Gas diffuser having varying thickness and nozzle density for semiconductor device fabrication and reaction furnace with gas diffuser
09/05/2000US6113699 Purging gas control structure for CVD chamber
09/05/2000US6113698 Degassing method and apparatus
09/05/2000US6112697 RF powered plasma enhanced chemical vapor deposition reactor and methods
09/05/2000US6112696 Downstream plasma using oxygen gas mixture
09/05/2000US6112695 Apparatus for plasma deposition of a thin film onto the interior surface of a container
09/05/2000US6112554 Device for forming a pyrolytic coating
09/05/2000CA2073236C Process and apparatus for the ignition of cvd plasmas
08/2000
08/31/2000WO2000051174A1 A method of processing a polymer layer
08/31/2000WO2000050246A1 Electronic device, method of manufacturing power supply board and imaging device, and method of manufacturing electronic device and electron source board
08/31/2000DE19907601A1 Verfahren sowie Anordnung zum kontinuierlichen Behandeln von Gegenständen Method and arrangement for the continuous treatment of objects
08/30/2000EP1032052A1 Method of manufacturing silicon based thin film photoelectric conversion device
08/30/2000EP1032032A2 Tailoring of a wetting/barrier layer to reduce electromigration in an aluminium interconnect
08/30/2000EP1032023A2 Method and arrangement for continuously treating objects
08/30/2000EP1031641A2 Method and apparatus for depositing an insulating film
08/30/2000EP1031640A1 Trap apparatus
08/30/2000EP1030855A1 Bismuth amide compounds and compositions, and method of forming bismuth-containing films therewith
08/30/2000EP1030788A1 Plasma processing methods and apparatus
08/30/2000EP1030745A1 All-surface biasable and/or temperature-controlled electrostatically-shielded rf plasma source
08/30/2000EP0928498B1 Method for producing a titanium monophosphide layer and its use
08/30/2000EP0907764B1 Cutting tool and manufacturing method therefor
08/30/2000EP0833960B1 Use of plasma polymer layer sequences as functional layers in material transport or heat exchanger systems
08/30/2000EP0586579B1 Microwave plasma processing device
08/30/2000CN1265163A Single body injector and deposition chamber
08/29/2000US6111284 Ferroelectric thin-film device
08/29/2000US6111124 Such as tris-(2,2,6,6-tetramethyl-3,5-heptanedionato) bismuth n,n,n'n'-tetramethylethylenediamine adduct; use as precursors for chemical vapor deposition of bismuth for ferroelectric thin film devices, chalcogenides, and thermoelectric films
08/29/2000US6111122 Group II MOCVD source reagents, and method of forming Group II metal-containing films utilizing same
08/29/2000US6110855 Process for strengthening aluminum based ceramics and material
08/29/2000US6110844 Reduction of particle deposition on substrates using temperature gradient control
08/29/2000US6110814 Forming on substrate an insulating film containing phosphorus oxide by using film forming gas in which oxidizing gas is added to mixture including silicon compound and phosphorus compound, heating, fluidizing, planarizing
08/29/2000US6110594 Diamond film and solid fiber composite compositions
08/29/2000US6110556 Lid assembly for a process chamber employing asymmetric flow geometries
08/29/2000US6110544 Surface such as glass, metal or plastic to be coated is positioned in the path of the active species generated by the plasma as they pass into and through the deposition or coating chamber of the apparatus; protective coatings
08/29/2000US6110543 Process for making compound films
08/29/2000US6110542 Method for forming a film
08/29/2000US6110541 Chemical vapor deposition method and apparatus for highly textured diamond film formation
08/29/2000US6110540 Plasma apparatus and method
08/29/2000US6110531 Gasifying a generated mist to form a gasified precursor comprising a bismuth-containing organic compound, a metal polyalkoxide compound, a lead-containing organic compound, oxidizing with oxygen gas to form a superlattice thin film
08/29/2000US6110530 CVD method of depositing copper films by using improved organocopper precursor blend
08/29/2000US6110529 Using a metalorganic reagent solution consisting a metalorganic complex dissolved in a solvent or suspending agent to deposit a metal, a metal oxide or a metal sulfide
08/29/2000US6110322 Prevention of ground fault interrupts in a semiconductor processing system
08/29/2000US6110290 Method for epitaxial growth and apparatus for epitaxial growth
08/29/2000US6110289 Rapid thermal processing barrel reactor for processing substrates
08/29/2000US6110287 Plasma processing method and plasma processing apparatus
08/29/2000US6110286 Vertical processing unit
08/29/2000US6110285 Vertical wafer boat
08/29/2000US6110284 Apparatus and a method for shielding light emanating from a light source heating a semicondutor processing chamber
08/29/2000US6110283 Chemical vapor deposition apparatus
08/29/2000US6110240 Superhard article with diamond coat and method of manufacturing same
08/29/2000US6109915 Drafting apparatus
08/29/2000US6109209 Apparatus for use with CVI/CVD processes
08/29/2000US6109208 Plasma generating apparatus with multiple microwave introducing means
08/29/2000US6109206 Remote plasma source for chamber cleaning
08/29/2000US6108937 Method of cooling wafers
08/29/2000CA2195049C Blood collection tube assembly
08/24/2000WO2000049646A1 Scalable lead zirconium titanate (pzt) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
08/24/2000WO2000049199A1 Method and apparatus for chemical vapor deposition of polysilicon
08/24/2000WO2000049198A1 Method and apparatus for controlling polymerized teos build-up in vacuum pump lines
08/24/2000WO2000049197A1 Wafer processing reactor having a gas flow control system and method
08/24/2000DE19907220A1 Diamond coated tool, especially a machining tool or dental tool, has adjustable surface topography obtained by sintering particles to tool body prior to diamond layer deposition
08/24/2000DE19906676A1 Bedampfungsvorrichtung A steamer
08/24/2000CA2362694A1 Wafer processing reactor having a gas flow control system and method
08/23/2000EP1030352A2 Method and apparatus for forming materials layers from atomic gases
08/23/2000EP1030089A2 Method and apparatus for removing processing liquid from a processing liquid path
08/23/2000EP1029943A1 Process for producing barrier film
08/23/2000EP1029371A1 CONSTRUCTION WITH HIGH T c? SUPERCONDUCTOR MATERIAL AND METHOD FOR PRODUCING SAID CONSTRUCTION
08/23/2000EP1029349A1 Titanium nitride contact plug formation
08/23/2000EP1029343A1 ELIMINATION OF THE TITANIUM NITRIDE FILM DEPOSITION IN TUNGSTEN PLUG TECHNOLOGY USING PE-CVD-Ti AND IN-SITU PLASMA NITRIDATION
08/23/2000EP1029109A1 Long life high temperature process chamber
08/23/2000EP1029108A1 Cemented carbide body with high wear resistance and extra tough behaviour
08/23/2000EP1029107A1 Method for applying a diamond layer on substrates made of sintered metallic carbide
08/23/2000EP1029106A1 Method of fabricating iridium-based materials and structures on substrates, and iridium source reagents therefor
08/23/2000EP1029103A1 Coating method and device
08/23/2000EP1028798A1 Gas purification system with safety device and method for purifying gases
08/23/2000EP1028797A1 Semiconductor manufacturing system with getter safety device
08/23/2000CN1264432A Method and device for vacuum-coating substrate
08/23/2000CN1264353A Method for depositing coating layer on optical fibre while it is being drawn and device for its implementation
08/23/2000CN1264159A Foreign-body elminating method, film forming method, semiconductor device and film forming device
08/23/2000CN1263953A Industrial pulse or DC plasma and chemical gas-phase deposition equipment for strenthening surface of tool or mould
08/22/2000US6108490 Multizone illuminator for rapid thermal processing with improved spatial resolution
08/22/2000US6108189 Electrostatic chuck having improved gas conduits
08/22/2000US6107214 Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers
08/22/2000US6107212 Method of and apparatus for manufacturing semiconductor devices
08/22/2000US6107200 Forming a second tungsten film on a first tungsten film which is formed by using a reduction gas not containing diborane, by using a gas containing the diborane, or forming the second tungsten film on the first tungsten film
08/22/2000US6107199 Method for improving the morphology of refractory metal thin films
08/22/2000US6107198 Ammonium chloride vaporizer cold trap
08/22/2000US6107192 Reactive preclean prior to metallization for sub-quarter micron application
08/22/2000US6107152 Method of forming tungsten nitride comprising layers using NF3 as a nitrogen source gas
08/22/2000US6106898 Vapor deposition nitride film with tert-butyl hydrazine
08/22/2000US6106892 Deposition of silicon oxide coating on glass
08/22/2000US6106737 Plasma treatment method utilizing an amplitude-modulated high frequency power
08/22/2000US6106734 Micromachine manufacture using gas beam crystallization
08/22/2000US6106682 Thin-film processing electromagnet for low-skew magnetic orientation