Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
09/2000
09/21/2000WO2000054893A1 Method and apparatus for metal oxide chemical vapor deposition on a substrate surface
09/21/2000DE19954021A1 Verfahren zur Bor-Dotierung von Wafern unter Einsatz eines Vertikalofensystems A method for boron doping wafers using a vertical furnace system
09/20/2000EP1037506A2 Heater for high vacuum optical view port
09/20/2000EP1037276A1 Method for forming a porous silicon dioxide film
09/20/2000EP1036863A1 Method for synthesizing n-type diamond having low resistance
09/20/2000EP1036860A2 Process chamber with inner support
09/20/2000EP1036774A1 Glass substrate having transparent conductive film
09/20/2000EP1036406A2 Improved low mass wafer support system
09/20/2000EP1036214A1 Mixed frequency cvd process and apparatus
09/20/2000EP1036213A1 Plasma polymerization enhancement of surface of metal for use in refrigerating and air conditioning
09/20/2000EP1036210A1 Apparatus for surface modification of polymer, metal and ceramic materials using ion beam
09/20/2000EP1036209A1 PROCESS FOR PREPARING A LiMO 2 TYPE HETEROMETALLIC OXIDE FILM
09/20/2000EP0871910A4 A method and apparatus for the construction of photosensitive waveguides
09/20/2000CN1267398A Controlled conversion of metal oxyfluorides into superconducting oxides
09/19/2000US6122439 Rapid thermal heating apparatus and method
09/19/2000US6122109 Non-planar micro-optical structures
09/19/2000US6121630 Layer of a mixed oxide of yttrium or a lathanide, barium and copper deposited on a sapphire substrate and covered with a protective layer comprising a crystalline film of strontium titanate; high critical temperature; storage stability
09/19/2000US6121581 Semiconductor processing system
09/19/2000US6121579 Heating apparatus, and processing apparatus
09/19/2000US6121443 Compound for the aluminum film from chemical vapor depositions and the method of synthesis
09/19/2000US6121164 Method for forming low compressive stress fluorinated ozone/TEOS oxide film
09/19/2000US6121163 Forming a layer on substrates by vapor deposition
09/19/2000US6121162 Insulating film with fluorine and gas flow
09/19/2000US6121161 Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions
09/19/2000US6121140 Vapor deposition of copper film on substrate and exposure to hydrogen arc plasma then deposition of copper film
09/19/2000US6121114 Method for preparing a dummy wafer
09/19/2000US6120912 Thin film made by annealing an applied coating solution of metal alkoxides of bismuth, a specified metallic elements a and b respectively, which contains composite metal alkoxides formed by any two or more metal alkoxides
09/19/2000US6120846 Simultaneously exposing insulating portion and electrically conductive portion of substrate to chemical vapor deposition process; during procedure selectively depositing bismuth based ferroelectric thin film on electrically conductive portion
09/19/2000US6120844 Depositing self-aligning epsilon layer ofdeposition material on workpiece; depositing conducting material over epsilon layer
09/19/2000US6120661 Apparatus for processing glass substrate
09/19/2000US6120660 Removable liner design for plasma immersion ion implantation
09/19/2000US6120611 Apparatus and method for hermetically sealing a chamber
09/19/2000US6120609 Self-aligning lift mechanism
09/19/2000US6120608 Workpiece support platen for semiconductor process chamber
09/19/2000US6120606 Gas vent system for a vacuum chamber
09/19/2000US6120605 Semiconductor processing system
09/14/2000WO2000054328A1 Production method for semiconductor device
09/14/2000WO2000054320A1 Radical-assisted sequential cvd
09/14/2000WO2000053823A1 Method for treating polymer surface
09/14/2000WO2000053822A1 A wafer transfer system and methods for using the same
09/14/2000WO2000018980A8 An in-line sputter deposition system
09/14/2000DE19914585C1 Diamond coated tool, especially a machining tool of hard metal or cermet, has an inner diamond-rich carbon layer and an outer lower diamond content carbon layer of higher thermal expansion coefficient
09/13/2000EP1035757A1 Substrate electrode plasma generator and substance/material processing method
09/13/2000EP1035589A2 Iridium composite barrier structure and method for same
09/13/2000EP1035569A1 Method for forming plasma films
09/13/2000EP1035568A1 Method of plasma processing
09/13/2000EP1034561A1 Rapid thermal processing (rtp) system with gas driven rotating substrate
09/13/2000EP1034320A1 Method and apparatus for coating diamond-like carbon onto particles
09/13/2000EP1034319A1 Method for depositing fine-grained alumina coatings on cutting tools
09/13/2000EP1034233A1 Diamond-like carbon coatings on inorganic phosphors
09/13/2000EP1034146A1 Improvements in coating glass
09/13/2000CN1266536A Carbon film for field emission device
09/13/2000CN1266111A High-efficient polishing working method for diamond film
09/12/2000US6118571 Thin film electro-optic modulator for broadband applications
09/12/2000US6118100 Susceptor hold-down mechanism
09/12/2000US6117799 Deposition of super thin PECVD SiO2 in multiple deposition station system
09/12/2000US6117573 A vapor deposited silicon carbide on a ceramic substrate; noncracking, gas-tightness and purity
09/12/2000US6117571 A vapor deposited inorganic coatings using a liquid delivery technique for flash vaporization of the precursor
09/12/2000US6117533 Substrate with a superhard coating containing boron and nitrogen and method of making the same
09/12/2000US6117496 Method of forming a hard carbon film over an inner surface of a guide bush using a jig
09/12/2000US6117487 Metal oxide film formed by vapor deposition
09/12/2000US6117482 Forming dielectric film by vapor deposition
09/12/2000US6117283 Forming a slider body having a leading end, a trailing end, and an air-bearing surface, forming a single exterior layer of elemental silicon on air-bearing surface to form an exterior wear resistance protective contact layer
09/12/2000US6117245 Method and apparatus for controlling cooling and heating fluids for a gas distribution plate
09/12/2000US6117244 Deposition resistant lining for CVD chamber
09/12/2000US6117243 CVD device for coating the inside of hollow bodies
09/12/2000US6116187 Thin film forming apparatus
09/12/2000US6116185 Gas injector for plasma enhanced chemical vapor deposition
09/12/2000US6116184 Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size
09/08/2000WO2000052973A2 Plasma reactor having a helicon wave high density plasma source
09/08/2000WO2000052225A1 A tool having a multilayer coating comprising multiple mtcvd layers
09/08/2000WO2000052224A1 Mt cvd process
09/08/2000WO2000052223A1 Tool with a molybdenum sulfide containing coating and method for its production
09/08/2000WO2000052222A1 Tool with a molybdenum sulphide coating and method for producing the same
09/08/2000WO2000052221A1 Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor
09/08/2000WO2000051732A1 The surface modification of solid supports through the thermal decomposition and functionalization of silanes
09/08/2000WO2000020900A3 Silicon carbide for use as a low dielectric constant anti-reflective coating and its deposition method
09/08/2000CA2363470A1 Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor
09/08/2000CA2360713A1 Mt cvd process
09/07/2000DE19957668A1 Hard metal, cermet, ceramic or steel tool, especially a cutter insert for metal machining, has a coating layer of randomly oriented molybdenum disulfide and trisulfide crystals
09/06/2000EP1033763A1 Method of manufacturing a compound semiconductor thin film and a solar cell using the thin film
09/06/2000EP1033747A2 An improved method for depositing and planarizing fluorinated BPSG films
09/06/2000EP1033746A1 Method of forming film by plasma
09/06/2000EP1033743A2 Apparatus and method for processing substrate
09/06/2000EP1032947A1 Uhv-compatible in-situ pre-metallization clean and metallization of semiconductor wafers
09/06/2000EP1032943A2 Method for producing plasma by microwave irradiation
09/06/2000EP1032723A1 Method and apparatus for misted deposition of thin films
09/06/2000EP1032722A1 Low pressure vapor phase deposition of organic thin films
09/06/2000CN1265431A Vapor deposition device
09/06/2000CN1265406A Method for priming on aluminium material and primer
09/05/2000US6115538 Steam supplying apparatus and method for controlling same
09/05/2000US6114722 Microcrystalline silicon structure and fabrication process
09/05/2000US6114557 Methods for preparing ruthenium and osmium compounds
09/05/2000US6114242 MOCVD molybdenum nitride diffusion barrier for Cu metallization
09/05/2000US6114227 Chamber for reducing contamination during chemical vapor deposition
09/05/2000US6114216 Methods for shallow trench isolation
09/05/2000US6114043 Transparent substrate provided with at least one thin layer based on silicone nitride or oxynitride and the process for obtaining it
09/05/2000US6113985 In the lower temperature zone, the solid reactant is vaporized and transported toward the molten metal, the reaction occurs in higher temperature zone, where metal reacts with halide to produce desired metal nitride and by-products
09/05/2000US6113984 Gas injection system for CVD reactors
09/05/2000US6113983 Method of forming metallic and ceramic thin film structures using metal halides and alkali metals