Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
10/2000
10/26/2000DE19953843A1 Verfahren zur Herstellung einer Kupferverdrahtung für eine Halbleitervorrichtung A process for producing a copper wiring for a semiconductor device
10/26/2000DE10017459A1 Lubricated sliding element, especially an adjusting shim for an i. c. engine valve operating mechanism, has a hard carbon-based film surface containing nitrogen and-or oxygen and-or having a low hydrogen content
10/26/2000CA2370991A1 Large area atmospheric-pressure plasma jet
10/26/2000CA2368962A1 Coating medical devices using air suspension
10/25/2000EP1047289A2 RF plasma source for material processing
10/25/2000EP1047113A2 Method and apparatus for generating controlled mixture of organic vapor and inert gas
10/25/2000EP1047104A1 Apparatus for particle beam induced modification of a specimen
10/25/2000EP1046729A1 CVD processing chamber
10/25/2000EP1046728A2 Process chamber with inner support
10/25/2000EP1046613A2 Method of forming carbon nanotubes
10/25/2000CN1270920A Forming method for carbon nano-tube
10/25/2000CN1057799C Method for preparing titanium nitride layer
10/24/2000US6137120 Semiconductor device and method of fabricating the same
10/24/2000US6136725 Method for chemical vapor deposition of a material on a substrate
10/24/2000US6136703 Methods for forming phosphorus- and/or boron-containing silica layers on substrates
10/24/2000US6136693 Method for planarized interconnect vias using electroless plating and CMP
10/24/2000US6136685 High deposition rate recipe for low dielectric constant films
10/24/2000US6136678 Method of processing a conductive layer and forming a semiconductor device
10/24/2000US6136451 Improving oxidation resistance of a platinum modified aluminide diffusion coating on a substrate by electroplating the substrate with a platinum layer from an aqueous hydroxide based electroplating solution and aluminizing the substrate
10/24/2000US6136389 Plasma polymerization; the noble metals are derived from a monomer or comonomer precursor of the noble metal and with the precursor being disposed within a plasma glow zone to dissociate into ions, allows metal to deposit as a film
10/24/2000US6136388 Substrate processing chamber with tunable impedance
10/24/2000US6136387 A plasma processing system, for attracting only positive ions from a plasma and repelling electrons and negative ions to the plasma, thereby forming a positive ion flow directed toward a target object
10/24/2000US6136386 Method of coating polymer or glass objects with carbon films
10/24/2000US6136159 Method for depositing metal
10/24/2000US6136096 Method and apparatus for correcting defects in photomask
10/24/2000US6135433 Continuous gas saturation system and method
10/24/2000US6135054 Semiconductor wafer holder with CVD silicon carbide film coating
10/24/2000US6135053 Apparatus for forming a deposited film by plasma chemical vapor deposition
10/24/2000US6134742 Apparatus for particle reduction in semiconductor processing equipment
10/24/2000CA2119198C Method of improving the selectivity of carbon membranes by chemical carbon vapor deposition
10/19/2000WO2000062328A1 Method and apparatus for stabilising a plasma
10/19/2000WO2000061833A1 Sequential chemical vapor deposition
10/19/2000WO2000061832A1 Method and getter devices for use in deposition of thin layers
10/19/2000WO2000061384A1 Remote plasma generator
10/19/2000WO2000026433A9 Polycrystalline diamond layer with (100) texture
10/18/2000EP1045435A2 Chemical vapor deposition of Pb5Ge3O11 thin film for ferroelectric applications
10/18/2000EP1044458A1 Dual face shower head electrode for a magnetron plasma generating apparatus
10/18/2000EP1044291A1 In situ growth of oxide and silicon layers
10/18/2000EP1044288A2 Method for forming a three-component nitride film containing metal and silicon
10/18/2000EP1044074A1 Photoresist coating process control with solent vapor sensor
10/18/2000EP0850323A4 Method and apparatus for cold wall chemical vapor deposition
10/18/2000CN1270415A Etching technology for reducing corrosion of metal patterns of coated layer on substrate
10/18/2000CN1270413A Method for forming copper wires in semiconductor device
10/17/2000US6133550 Method and apparatus for thermal processing of semiconductor substrates
10/17/2000US6133161 Methods of forming a film on a substrate using complexes having tris(pyrazolyl) methanate ligands
10/17/2000US6133159 Chemical vapor deposition of ruthenium oxide onto semiconductor substrate by vapor phase oxidation of (dienyl)ruthenium tricarbonyl complex with an oxidizing gas
10/17/2000US6133152 Co-rotating edge ring extension for use in a semiconductor processing chamber
10/17/2000US6133148 Method of depositing film for semiconductor device in single wafer type apparatus using a lamp heating method
10/17/2000US6133121 Apparatus for supporting semiconductor wafers and semiconductor wafer processing method using supporting apparatus
10/17/2000US6133051 Chemical vapor deposition and annealing to transform it into a ferroelectric layer
10/17/2000US6133050 Coating with a liquid precursor containing a plurality of metal moieties, drying by heating and exposing to an ultraviolet radiation to increase the c-axis orientation in metal oxide layered superlattice material thin film
10/17/2000US6132890 High-temperature spray coated member and method of production thereof
10/17/2000US6132875 Multilayer; protective layer and lubricant on nonmagnetic substrate
10/17/2000US6132816 Effecting plasma assisted chemical vapor deposition with carbon source and hydrogen gas concentration of mixed gas at first level for depositing high-quality homoepitaxial diamond thin film; depositing with concentration at second level
10/17/2000US6132653 Powders formed by pressurization and transport of solutions, heating, exposure to spray
10/17/2000US6132564 In-situ pre-metallization clean and metallization of semiconductor wafers
10/17/2000US6132552 Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
10/17/2000US6132550 Apparatuses for desposition or etching
10/17/2000US6132519 Vapor deposition apparatus and vapor deposition method
10/17/2000US6132518 A closed loop, carbon monoxide self-contained process for the production of nickel or a nickel-coated object; a nickel carbonyl vapour recovery system to freezing nickel carbonyl melt the solid nickel carbonyl and recover it
10/17/2000US6132517 Multiple substrate processing apparatus for enhanced throughput
10/17/2000US6132516 Vacuum deposition apparatus
10/17/2000US6132515 Liquid precursor delivery system
10/17/2000US6132514 Catalytic breakdown of reactant gases in chemical vapor deposition
10/17/2000US6132512 Vapor-phase film growth apparatus and gas ejection head
10/17/2000US6132491 Method and apparatus for dissociating metals from metal compounds extracted into supercritical fluids
10/17/2000US6131533 Jig for forming hard carbon film over inner surface of guide bush using the jig
10/17/2000CA2177012C Segmented substrate for improved arc-jet diamond deposition
10/12/2000WO2000060657A1 Endpoint detection in the fabrication of electronic devices
10/12/2000WO2000060647A1 Device having multi-layer structure, production device for the device, and production method for the device
10/12/2000WO2000060414A1 Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
10/12/2000WO2000060137A1 Diamond-coated tool and process for producing thereof
10/12/2000WO2000035782A3 Distributed control system architecture and method for a material transport system
10/12/2000DE19921303C1 Medical glass container, for holding pharmaceutical or medical diagnostic solution, has an inner PECVD non-stick layer containing silicon, oxygen, carbon and hydrogen
10/12/2000DE19850592C1 Haftvermittlerschicht zur Erzeugung haftfester Leiterstrukturen auf Isoliermaterialien der Elektronik Adhesive layer to produce adherent conductor structures on insulating the electronics
10/12/2000CA2369042A1 Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
10/12/2000CA2367184A1 Diamond-coated tool and process for producing thereof
10/11/2000EP1043764A1 Semiconductor wafer and its manufacturing method
10/11/2000EP1043763A1 Semiconductor wafer and vapor growth apparatus
10/11/2000EP1043762A1 Polycrystalline silicon thin film forming method and thin film forming apparatus
10/11/2000EP1043420A1 Silicon carbide body
10/11/2000EP1043419A1 A diamond film depositing apparatus and method thereof
10/11/2000EP1043416A2 Cemented carbide insert
10/11/2000EP1043289A1 Low stress, water-clear zinc sulfide
10/11/2000EP1042795A1 Precleaning step prior to metallization for sub-quarter micron application
10/11/2000EP1042783A1 Focus rings and methods therefor
10/11/2000EP1042544A1 Growth of very uniform silicon carbide epitaxial layers
10/11/2000EP1042532A1 Method for annealing an amorphous film using microwave energy
10/11/2000EP1042531A2 Material deposition
10/11/2000EP1042530A1 Multilayered cvd coated article and process for producing same
10/11/2000EP1042529A1 Method for selectively depositing bismuth based ferroelectric films
10/11/2000EP1042528A1 Method for deposition of ferroelectric thin films
10/11/2000EP1042527A1 Coated cemented carbide cutting tool and method of coating it with diamond
10/11/2000EP0931175B1 Conveyor and delivery device
10/11/2000CN1269847A Method of depositing electrocatalyst and electrodes formed by such method
10/11/2000CN1057349C Plasma processing method and plasma processing apparatus
10/11/2000CN1057348C Method and apparatus for chemically gas phase sedimenting coating of inner surface of essentially semispheric stroma
10/10/2000US6130451 High dielectric constant material containing tantalum, process for forming high dielectric constant film containing tantalum, and semiconductor device using the same
10/10/2000US6130345 Copper (1) precursors for chemical deposit in gas phase of metallic copper
10/10/2000US6130160 Amine complexes include a group iiia metal, and are particularly suitable for use in a chemical vapor deposition system.
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