Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
11/2000
11/08/2000EP1050517A1 Glass container for medical purposes
11/08/2000EP1050073A1 Method of eliminating edge effect in chemical vapor deposition of a metal
11/08/2000EP1049820A1 Method for epitaxial growth on a substrate
11/08/2000EP1049813A1 T proced
11/08/2000EP1004132A4 A carbon film for field emission devices
11/08/2000CN1272953A Dual face shower head magnetron, plasma generating apparatus and method for coating substrate
11/08/2000CN1272557A Preparation process of diamond film suitable for linkage on silicone substrate
11/07/2000US6144898 Control process and device for treating the surface of a solid substrate
11/07/2000US6144050 Electronic devices with strontium barrier film and process for making same
11/07/2000US6143672 Method of reducing metal voidings in 0.25 μm AL interconnect
11/07/2000US6143659 Method for manufacturing aluminum metal interconnection layer by atomic layer deposition method
11/07/2000US6143619 Method for manufacturing semiconductor device and semiconductor device manufacturing apparatus
11/07/2000US6143377 Process of forming a refractory metal thin film
11/07/2000US6143376 Method for manufacturing coated short fibers
11/07/2000US6143362 Films on a substrate of an integrated circuit (ic) by forming a seed layer, then reducing a titanium precursor with the seed layer. in one embodiment, the seed layer comprises zinc.
11/07/2000US6143361 In exhaust conduit of cvd coating apparatus by introduction of gaseous chemical reactant in the exhaust stream to react with excess gaseous reactant constituents to form solid reaction products to reduce harmful deposition of liquid
11/07/2000US6143357 Aluminum complex derivatives for chemical vacuum evaporation and the method of producing the same
11/07/2000US6143192 Contacting at least a region of a surface of the ruthenium metal structure or a layer of ruthenium oxide layer with a solution comprising ceric ammonium nitrate
11/07/2000US6143129 Inductive plasma reactor
11/07/2000US6143128 Apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof
11/07/2000US6143086 Apparatus for full wafer deposition
11/07/2000US6143085 Laser desorption of CVD precursor species
11/07/2000US6143082 Isolation of incompatible processes in a multi-station processing chamber
11/07/2000US6143081 Film forming apparatus and method, and film modifying apparatus and method
11/07/2000US6143080 Wafer processing reactor having a gas flow control system and method
11/07/2000US6143079 Compact process chamber for improved process uniformity
11/07/2000US6143078 Gas distribution system for a CVD processing chamber
11/07/2000US6143077 Chemical vapor deposition apparatus
11/07/2000US6143063 Misted precursor deposition apparatus and method with improved mist and mist flow
11/07/2000US6143040 Comprises a semiconductor wafer processing chamber, a wafer transfer device, a wafer cassette holding unit, a wafer cassette transfer device and a wafer cassette bringing in/out section disposed in this order and a housing
11/07/2000US6142773 Enveloping device and vertical heat-treating apparatus for semiconductor process system
11/07/2000US6142539 Gas panel
11/07/2000US6142481 A piston ring having a hard film comprises diamond-like carbon in which are dispersed one or more elements selected from the group consisting of silicon, titanium, tungsten, chromium, molybdenum, niobium and vanadium
11/07/2000US6142096 Electronic device manufacturing apparatus and method for manufacturing electronic device
11/02/2000WO2000065649A1 CVD TiN PLUG FORMATION FROM TITANIUM HALIDE PRECURSORS
11/02/2000WO2000065640A1 PECVD OF Ta FILMS FROM TANTALUM HALIDE PRECURSORS
11/02/2000WO2000065631A2 Apparatus and method for exposing a substrate to plasma radicals
11/02/2000WO2000065611A1 Method of forming conducting transparent film, method of repairing wiring connection, and apparatus for forming conducting transparent film
11/02/2000WO2000065127A1 Apparatus and method for delivery of vapor to a cvd chamber
11/02/2000WO2000065126A1 Cvd tantalum nitride plug formation from tantalum halide precursors
11/02/2000WO2000065125A1 PECVD OF TaN FILMS FROM TANTALUM HALIDE PRECURSORS
11/02/2000WO2000065124A1 Plasma treatment of thermal cvd tan films from tantalum halide precursors
11/02/2000WO2000065123A1 THERMAL CVD OF TaN FILMS FROM TANTALUM HALIDE PRECURSORS
11/02/2000WO2000065122A1 CVD OF INTEGRATED Ta AND TaNx FILMS FROM TANTALUM HALIDE PRECURSORS
11/02/2000WO2000065121A1 Chemical vapor deposition system and method
11/02/2000WO2000018980A9 An in-line sputter deposition system
11/02/2000EP1049356A2 Heating apparatus for semiconductor wafers or substrates
11/02/2000EP1049149A2 Multi-phase lead germanate film and deposition method
11/02/2000EP1049148A2 C-axis oriented lead germanate film and deposition method
11/02/2000EP1049147A2 Epitaxially grown lead germanate film
11/02/2000EP1049133A2 Enhancing adhesion of deposits on exposed surfaces in process chamber
11/02/2000EP1048750A1 Coated cutting tool
11/02/2000EP1048747A1 Process and apparatus for treating a material with electromagnetic radiation under a controlled atmosphere
11/02/2000EP1048618A1 Process for making gold salt for use in electroplating process
11/02/2000EP1047808A1 Method of cleaning a cvd cold-wall chamber and exhaust lines
11/02/2000EP1047807A1 Substituted phenylethylene precursor deposition method
11/02/2000EP1047506A1 Spinning disk evaporator
11/02/2000EP0990059A4 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
11/02/2000DE19919902A1 Verfahren zur Herstellung eines Waferträgers, der insbesondere in einem Hochtemperatur-CVD-Reaktor bzw. bei einem Hochtemperatur-CVD-Verfahren unter Einsatz agressiver Gase Verwendung findet A method of manufacturing a wafer carrier, which is used in particular in a high temperature-CVD reactor or in a high-temperature CVD method using aggressive gases
11/02/2000DE19919326A1 Kammer für eine chemische Dampfbeschichtung Chamber for a chemical vapor deposition
11/02/2000DE19919010A1 Ceramic coating process, especially PVD or PECVD of silicon carbide e.g. for cutting tools, semiconductor devices and space travel applications, comprises depositing an amorphous ceramic layer at well below the ceramic melting temperature
11/02/2000DE19918802A1 Large area vacuum laser beam processing apparatus, e.g. for micro structuring semiconductor wafer surfaces, has a rotating window disk sealed by an O-ring seal and provided with a smaller window
11/02/2000CA2371353A1 Chemical vapor deposition system and method
11/01/2000CN1272142A Plasma enhanced chemical deposition with low vapor pressure compounds
11/01/2000CN1272141A Plasma polymerization enhancement of surface of metal for use in refrigerating and air conditioning
10/2000
10/31/2000USRE36936 Production of high-purity polycrystalline silicon rod for semiconductor applications
10/31/2000USRE36925 Vacuum treatment apparatus and a method for manufacturing semiconductor device therein
10/31/2000US6140624 Pyrolytic boron nitride radiation heater
10/31/2000US6140256 Method and device for treating semiconductor with treating gas while substrate is heated
10/31/2000US6140255 Method for depositing silicon nitride using low temperatures
10/31/2000US6140215 Method and apparatus for low temperature deposition of CVD and PECVD films
10/31/2000US6140204 Process for producing a semiconductor device having hemispherical grains (HSG)
10/31/2000US6139983 Containing a fluoride of at least one element selected from the group consisting of rare earth elements and alkaline earth elements.
10/31/2000US6139976 Article having a superalloy substrate and an enrichment layer placed thereon, and methods of its manufacturing
10/31/2000US6139964 Plasma enhancement apparatus and method for physical vapor deposition
10/31/2000US6139923 Method and apparatus for reducing particle contamination in a substrate processing chamber
10/31/2000US6139922 Tantalum and tantalum-based films formed using fluorine-containing source precursors and methods of making the same
10/31/2000US6139921 Method for depositing fine-grained alumina coatings on cutting tools
10/31/2000US6139700 Protective layer prevents defects in the conductive layer caused by precursor impurities used during the formation of the metal barrier layer.
10/31/2000US6139682 Processing apparatus for manufacturing semiconductors
10/31/2000US6139681 Plasma assisted process vessel cleaner
10/31/2000US6139678 Plasma processing methods and apparatus
10/31/2000US6139642 Substrate processing apparatus and method
10/31/2000US6139641 Substrate processing apparatus having a gas heating tube
10/31/2000US6139640 Chemical vapor deposition system and method employing a mass flow controller
10/31/2000US6139022 A diamond-like carbon hard overcoatings with dispersed carbides of one or more elements selected from the group consisting of silicon, titanium, tungsten, chromium, molybdenum, niobium, and vanadium; use in internal combustion
10/31/2000US6138745 Two-stage sealing system for thermally conductive chuck
10/31/2000CA2214921C Apparatus for depositing barrier film on three dimensional articles
10/30/2000CA2306319A1 Process for making gold salt for use in electroplating process
10/26/2000WO2000063959A1 METHOD FOR SINGLE CHAMBER PROCESSING OF PECVD-TI AND CVD-TIN FILMs IN IC MANUFACTURING
10/26/2000WO2000063957A1 Method of forming a thin film
10/26/2000WO2000063956A1 Method and apparatus for thin-film deposition, and method of manufacturing thin-film semiconductor device
10/26/2000WO2000063955A1 Plasma processing apparatus
10/26/2000WO2000063953A1 Method of manufacturing semiconductor device and manufacturing line thereof
10/26/2000WO2000063943A1 Large area atmospheric-pressure plasma jet
10/26/2000WO2000063466A1 Compound gas injection system and methods
10/26/2000WO2000063461A1 Novel organocuprous precursors for chemical vapor deposition of a copper film
10/26/2000WO2000063460A1 Method for vacuum treatment of workpieces and vacuum treatment facility
10/26/2000WO2000062903A1 Organic acid scrubber & methods
10/26/2000WO2000062830A2 Coating medical devices using air suspension