Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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11/08/2000 | EP1050517A1 Glass container for medical purposes |
11/08/2000 | EP1050073A1 Method of eliminating edge effect in chemical vapor deposition of a metal |
11/08/2000 | EP1049820A1 Method for epitaxial growth on a substrate |
11/08/2000 | EP1049813A1 T proced |
11/08/2000 | EP1004132A4 A carbon film for field emission devices |
11/08/2000 | CN1272953A Dual face shower head magnetron, plasma generating apparatus and method for coating substrate |
11/08/2000 | CN1272557A Preparation process of diamond film suitable for linkage on silicone substrate |
11/07/2000 | US6144898 Control process and device for treating the surface of a solid substrate |
11/07/2000 | US6144050 Electronic devices with strontium barrier film and process for making same |
11/07/2000 | US6143672 Method of reducing metal voidings in 0.25 μm AL interconnect |
11/07/2000 | US6143659 Method for manufacturing aluminum metal interconnection layer by atomic layer deposition method |
11/07/2000 | US6143619 Method for manufacturing semiconductor device and semiconductor device manufacturing apparatus |
11/07/2000 | US6143377 Process of forming a refractory metal thin film |
11/07/2000 | US6143376 Method for manufacturing coated short fibers |
11/07/2000 | US6143362 Films on a substrate of an integrated circuit (ic) by forming a seed layer, then reducing a titanium precursor with the seed layer. in one embodiment, the seed layer comprises zinc. |
11/07/2000 | US6143361 In exhaust conduit of cvd coating apparatus by introduction of gaseous chemical reactant in the exhaust stream to react with excess gaseous reactant constituents to form solid reaction products to reduce harmful deposition of liquid |
11/07/2000 | US6143357 Aluminum complex derivatives for chemical vacuum evaporation and the method of producing the same |
11/07/2000 | US6143192 Contacting at least a region of a surface of the ruthenium metal structure or a layer of ruthenium oxide layer with a solution comprising ceric ammonium nitrate |
11/07/2000 | US6143129 Inductive plasma reactor |
11/07/2000 | US6143128 Apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof |
11/07/2000 | US6143086 Apparatus for full wafer deposition |
11/07/2000 | US6143085 Laser desorption of CVD precursor species |
11/07/2000 | US6143082 Isolation of incompatible processes in a multi-station processing chamber |
11/07/2000 | US6143081 Film forming apparatus and method, and film modifying apparatus and method |
11/07/2000 | US6143080 Wafer processing reactor having a gas flow control system and method |
11/07/2000 | US6143079 Compact process chamber for improved process uniformity |
11/07/2000 | US6143078 Gas distribution system for a CVD processing chamber |
11/07/2000 | US6143077 Chemical vapor deposition apparatus |
11/07/2000 | US6143063 Misted precursor deposition apparatus and method with improved mist and mist flow |
11/07/2000 | US6143040 Comprises a semiconductor wafer processing chamber, a wafer transfer device, a wafer cassette holding unit, a wafer cassette transfer device and a wafer cassette bringing in/out section disposed in this order and a housing |
11/07/2000 | US6142773 Enveloping device and vertical heat-treating apparatus for semiconductor process system |
11/07/2000 | US6142539 Gas panel |
11/07/2000 | US6142481 A piston ring having a hard film comprises diamond-like carbon in which are dispersed one or more elements selected from the group consisting of silicon, titanium, tungsten, chromium, molybdenum, niobium and vanadium |
11/07/2000 | US6142096 Electronic device manufacturing apparatus and method for manufacturing electronic device |
11/02/2000 | WO2000065649A1 CVD TiN PLUG FORMATION FROM TITANIUM HALIDE PRECURSORS |
11/02/2000 | WO2000065640A1 PECVD OF Ta FILMS FROM TANTALUM HALIDE PRECURSORS |
11/02/2000 | WO2000065631A2 Apparatus and method for exposing a substrate to plasma radicals |
11/02/2000 | WO2000065611A1 Method of forming conducting transparent film, method of repairing wiring connection, and apparatus for forming conducting transparent film |
11/02/2000 | WO2000065127A1 Apparatus and method for delivery of vapor to a cvd chamber |
11/02/2000 | WO2000065126A1 Cvd tantalum nitride plug formation from tantalum halide precursors |
11/02/2000 | WO2000065125A1 PECVD OF TaN FILMS FROM TANTALUM HALIDE PRECURSORS |
11/02/2000 | WO2000065124A1 Plasma treatment of thermal cvd tan films from tantalum halide precursors |
11/02/2000 | WO2000065123A1 THERMAL CVD OF TaN FILMS FROM TANTALUM HALIDE PRECURSORS |
11/02/2000 | WO2000065122A1 CVD OF INTEGRATED Ta AND TaNx FILMS FROM TANTALUM HALIDE PRECURSORS |
11/02/2000 | WO2000065121A1 Chemical vapor deposition system and method |
11/02/2000 | WO2000018980A9 An in-line sputter deposition system |
11/02/2000 | EP1049356A2 Heating apparatus for semiconductor wafers or substrates |
11/02/2000 | EP1049149A2 Multi-phase lead germanate film and deposition method |
11/02/2000 | EP1049148A2 C-axis oriented lead germanate film and deposition method |
11/02/2000 | EP1049147A2 Epitaxially grown lead germanate film |
11/02/2000 | EP1049133A2 Enhancing adhesion of deposits on exposed surfaces in process chamber |
11/02/2000 | EP1048750A1 Coated cutting tool |
11/02/2000 | EP1048747A1 Process and apparatus for treating a material with electromagnetic radiation under a controlled atmosphere |
11/02/2000 | EP1048618A1 Process for making gold salt for use in electroplating process |
11/02/2000 | EP1047808A1 Method of cleaning a cvd cold-wall chamber and exhaust lines |
11/02/2000 | EP1047807A1 Substituted phenylethylene precursor deposition method |
11/02/2000 | EP1047506A1 Spinning disk evaporator |
11/02/2000 | EP0990059A4 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices |
11/02/2000 | DE19919902A1 Verfahren zur Herstellung eines Waferträgers, der insbesondere in einem Hochtemperatur-CVD-Reaktor bzw. bei einem Hochtemperatur-CVD-Verfahren unter Einsatz agressiver Gase Verwendung findet A method of manufacturing a wafer carrier, which is used in particular in a high temperature-CVD reactor or in a high-temperature CVD method using aggressive gases |
11/02/2000 | DE19919326A1 Kammer für eine chemische Dampfbeschichtung Chamber for a chemical vapor deposition |
11/02/2000 | DE19919010A1 Ceramic coating process, especially PVD or PECVD of silicon carbide e.g. for cutting tools, semiconductor devices and space travel applications, comprises depositing an amorphous ceramic layer at well below the ceramic melting temperature |
11/02/2000 | DE19918802A1 Large area vacuum laser beam processing apparatus, e.g. for micro structuring semiconductor wafer surfaces, has a rotating window disk sealed by an O-ring seal and provided with a smaller window |
11/02/2000 | CA2371353A1 Chemical vapor deposition system and method |
11/01/2000 | CN1272142A Plasma enhanced chemical deposition with low vapor pressure compounds |
11/01/2000 | CN1272141A Plasma polymerization enhancement of surface of metal for use in refrigerating and air conditioning |
10/31/2000 | USRE36936 Production of high-purity polycrystalline silicon rod for semiconductor applications |
10/31/2000 | USRE36925 Vacuum treatment apparatus and a method for manufacturing semiconductor device therein |
10/31/2000 | US6140624 Pyrolytic boron nitride radiation heater |
10/31/2000 | US6140256 Method and device for treating semiconductor with treating gas while substrate is heated |
10/31/2000 | US6140255 Method for depositing silicon nitride using low temperatures |
10/31/2000 | US6140215 Method and apparatus for low temperature deposition of CVD and PECVD films |
10/31/2000 | US6140204 Process for producing a semiconductor device having hemispherical grains (HSG) |
10/31/2000 | US6139983 Containing a fluoride of at least one element selected from the group consisting of rare earth elements and alkaline earth elements. |
10/31/2000 | US6139976 Article having a superalloy substrate and an enrichment layer placed thereon, and methods of its manufacturing |
10/31/2000 | US6139964 Plasma enhancement apparatus and method for physical vapor deposition |
10/31/2000 | US6139923 Method and apparatus for reducing particle contamination in a substrate processing chamber |
10/31/2000 | US6139922 Tantalum and tantalum-based films formed using fluorine-containing source precursors and methods of making the same |
10/31/2000 | US6139921 Method for depositing fine-grained alumina coatings on cutting tools |
10/31/2000 | US6139700 Protective layer prevents defects in the conductive layer caused by precursor impurities used during the formation of the metal barrier layer. |
10/31/2000 | US6139682 Processing apparatus for manufacturing semiconductors |
10/31/2000 | US6139681 Plasma assisted process vessel cleaner |
10/31/2000 | US6139678 Plasma processing methods and apparatus |
10/31/2000 | US6139642 Substrate processing apparatus and method |
10/31/2000 | US6139641 Substrate processing apparatus having a gas heating tube |
10/31/2000 | US6139640 Chemical vapor deposition system and method employing a mass flow controller |
10/31/2000 | US6139022 A diamond-like carbon hard overcoatings with dispersed carbides of one or more elements selected from the group consisting of silicon, titanium, tungsten, chromium, molybdenum, niobium, and vanadium; use in internal combustion |
10/31/2000 | US6138745 Two-stage sealing system for thermally conductive chuck |
10/31/2000 | CA2214921C Apparatus for depositing barrier film on three dimensional articles |
10/30/2000 | CA2306319A1 Process for making gold salt for use in electroplating process |
10/26/2000 | WO2000063959A1 METHOD FOR SINGLE CHAMBER PROCESSING OF PECVD-TI AND CVD-TIN FILMs IN IC MANUFACTURING |
10/26/2000 | WO2000063957A1 Method of forming a thin film |
10/26/2000 | WO2000063956A1 Method and apparatus for thin-film deposition, and method of manufacturing thin-film semiconductor device |
10/26/2000 | WO2000063955A1 Plasma processing apparatus |
10/26/2000 | WO2000063953A1 Method of manufacturing semiconductor device and manufacturing line thereof |
10/26/2000 | WO2000063943A1 Large area atmospheric-pressure plasma jet |
10/26/2000 | WO2000063466A1 Compound gas injection system and methods |
10/26/2000 | WO2000063461A1 Novel organocuprous precursors for chemical vapor deposition of a copper film |
10/26/2000 | WO2000063460A1 Method for vacuum treatment of workpieces and vacuum treatment facility |
10/26/2000 | WO2000062903A1 Organic acid scrubber & methods |
10/26/2000 | WO2000062830A2 Coating medical devices using air suspension |