Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
11/2000
11/28/2000US6152977 Surface functionalized diamond crystals and methods for producing same
11/28/2000US6152166 Apparatus for dividing a gas stream into several partial gas streams
11/28/2000US6152075 Method and system for heating semiconductor wafers
11/28/2000US6152072 Chemical vapor deposition coating of fibers using microwave application
11/28/2000US6152071 High-frequency introducing means, plasma treatment apparatus, and plasma treatment method
11/28/2000US6152070 Tandem process chamber
11/28/2000CA2210599C Process for depositing barrier film on three-dimensional articles
11/28/2000CA2038220C Process for depositing hard coating in a nozzle orifice
11/28/2000CA2001009C Infrared window
11/23/2000WO2000070673A1 Tungsten-filled deep trenches
11/23/2000WO2000070662A1 Device for film deposition
11/23/2000WO2000070661A1 Apparatus for manufacturing semiconductor device and method of manufacture thereof
11/23/2000WO2000070658A1 Multi-zone resistive heater
11/23/2000WO2000070657A1 Chuck having pressurized zones of heat transfer gas
11/23/2000WO2000070129A1 Method and apparatus for epitaxially growing a material on a substrate
11/23/2000WO2000070121A1 UTILIZATION OF SiH4, SOAK AND PURGE IN DEPOSITION PROCESSES
11/23/2000WO2000070120A1 Al2O3 COATED CUTTING TOOL
11/23/2000WO2000070119A1 Mocvd processes using precursors based on organometalloid ligands
11/23/2000WO2000070118A1 Tantalum and tantalum-based films formed using fluorine-containing source precursors and methods of making the same
11/23/2000WO2000070117A1 Low-temperature compatible wide-pressure-range plasma flow device
11/23/2000WO2000070116A1 Low pressure stagnation flow reactors with a flow barrier
11/23/2000WO2000042236A3 Processing system and method for chemical vapor deposition
11/23/2000DE19922665A1 Three-dimensional base body used in the production of a bearing or sealing component has a fine crystalline diamond structure with a specified surface roughness
11/22/2000EP1054444A1 Process for depositing a porous, low dielectric constant silicon oxide film
11/22/2000EP1054438A2 System and method for cleaning silicon-coated surfaces in an ion implanter
11/22/2000EP1054311A1 Gas delivery metering tube
11/22/2000EP1054076A2 Gas distribution system
11/22/2000EP1054075A1 Sliding part covered with lubrication promoting oxides stabilized by trace elements
11/22/2000EP1053442A1 Wafer carrier and semiconductor apparatus for processing a semiconductor substrate
11/22/2000EP0821799A4 Fabrication of silica-based optical devices and opto-electronic devices
11/22/2000CN1274395A Dual frequency excitation of plasma for film deposition
11/22/2000CN1274020A Cold cathode structure of diamond film and its preparing process
11/21/2000USRE36957 Method and apparatus for cold wall chemical vapor deposition
11/21/2000US6151532 Method and apparatus for predicting plasma-process surface profiles
11/21/2000US6151447 Rapid thermal processing apparatus for processing semiconductor wafers
11/21/2000US6150549 As monomers(starting material) of polysilane eligible for precursor of electroconductive- and photoconductive-materials such as phtoresists as well as polymerization initiators and and which is useful for chemical vapor deposition
11/21/2000US6150283 Thin film transistor fabrication method, active matrix substrate fabrication method, and liquid crystal display device
11/21/2000US6150265 Apparatus for forming materials
11/21/2000US6150226 Nitrogen exposure
11/21/2000US6149987 Enhancing the surface sensitivity of a pecvd liner layer with activated oxygen.
11/21/2000US6149984 Laser irradiation processing on a film that is sensitive to impurities, such as a semiconductor film that has been subjected to laser light irradiation. another object of the invention is to facilitate cleaning irradiation apparatus.
11/21/2000US6149982 Method of forming a coating on an inner surface
11/21/2000US6149975 Potassium-containing thin film and process for producing the same
11/21/2000US6149974 Deposits a ramp layer while ramping pressure to a target deposition pressure and deposits an sacvd layer over the ramp layer. in one
11/21/2000US6149783 Vacuum treatment apparatus
11/21/2000US6149779 Filling gaps during integrated circuit production using gas mixture consisting of silicon-containing, oxygen-containing and boron-containing components to deposit film over said gaps by simultaneous chemical vapor deposition and sputter etching
11/21/2000US6149730 Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor
11/21/2000US6149729 Film forming apparatus and method
11/21/2000US6149728 Semiconductor manufacturing device
11/21/2000US6149365 Support frame for substrates
11/21/2000US6149162 Sliding member
11/21/2000US6148847 Low vapor pressure gas distribution system and method
11/21/2000US6148764 Multiple micro inlet silane injection system for the jet vapor deposition of silicon nitride with a microwave discharge jet source
11/21/2000US6148763 Deposited film forming apparatus
11/21/2000US6148762 Plasma processing apparatus
11/21/2000US6148761 Dual channel gas distribution plate
11/21/2000CA2308758A1 Gas delivery metering tube
11/17/2000CA2308832A1 Gas distribution system
11/16/2000WO2000068472A1 Truncated susceptor for vapor-phase deposition
11/16/2000WO2000068471A1 Sequential hydride vapor-phase epitaxy
11/16/2000WO2000068470A1 Magnesium-doped iii-v nitrides & methods
11/16/2000WO2000068457A1 Inserts for metal cutting purposes
11/16/2000WO2000067879A1 Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases
11/16/2000WO2000045422A3 Inflatable slit/gate valve
11/16/2000WO2000026974A3 Semiconductor processing chamber calibration tool
11/16/2000DE19921744A1 Process for transporting vaporous substances through the wall of a vacuum chamber into the chamber comprises inserting the substance through an inner tube of a double casing tube into the vacuum chamber from the outside
11/15/2000EP1052694A1 Semiconductor device having insulating film of fluorine-added carbon film and method of producing the same
11/15/2000EP1052309A2 Apparatus for fabrication of thin films
11/15/2000EP1052308A2 Process for coating of a heat exchanger
11/15/2000EP1052307A2 Heat transfer surface
11/15/2000EP1051536A1 Method and apparatus for deposition of three- dimensional object
11/15/2000CN1273280A RF film-plating technology by siliconization
11/15/2000CN1058534C Method for forming diamond film
11/14/2000US6147033 Apparatus and method for forming a film on a tape substrate
11/14/2000US6147020 Light-impermeable, high purity silicon carbide material, a light shielding member for a semiconductor-treating apparatus, and a semiconductor-treating apparatus
11/14/2000US6147013 Method of LPCVD silicon nitride deposition
11/14/2000US6147012 Process for forming low k silicon oxide dielectric material while suppressing pressure spiking and inhibiting increase in dielectric constant
11/14/2000US6147011 In the presence of activated fluorine, a dielectric layer is chemical vapor deposited over the substrate
11/14/2000US6147009 Hydrogenated oxidized silicon carbon material
11/14/2000US6147006 Cleaning gas
11/14/2000US6146724 A laminate comprising a silicon oxide barrier layer, forming a container, such that the barrier layer is on the interior of the container; gas impermeability, resists impact, and resists abrasion
11/14/2000US6146697 Introducing into reaction chamber a deposition process gas comprising a hydrogen halide and a carbon/nitrogen source, a metal-halogen compound, hydrogen, and nitrogen so that a carbonitride-containing coating is deposited on substrate
11/14/2000US6146692 Caustic process for replacing a thermal barrier coating
11/14/2000US6146608 Stable hydride source compositions for manufacture of semiconductor devices and structures
11/14/2000US6146463 Apparatus and method for aligning a substrate on a support member
11/14/2000US6146461 Chemical vapor deposition apparatus having a gas diffusing nozzle designed to diffuse gas equally at all levels
11/14/2000US6146135 Oxide film forming method
11/14/2000US6145763 Fluorine-coating amorphous hydronated carbon film is made in part from trifluoromethyltrimethylsilane; coating helps improve fuel economy and engine performance
11/14/2000US6145469 Plasma processing apparatus and processing method
11/09/2000WO2000067311A2 Method for producing a wafer support in a high-temperature cvd reactor
11/09/2000WO2000066806A1 Use of a method for the plasma-supported reactive deposition of a material
11/09/2000WO2000066805A1 Chamber for chemical vapour deposition
11/09/2000WO2000066804A1 Device for treating a container with microwave plasma
11/09/2000WO2000066506A1 Highly tetrahedral amorphous carbon coating on glass
11/09/2000WO2000066353A1 Wear-resistant polymeric articles and methods of making the same
11/09/2000CA2370153A1 Chamber for chemical vapour deposition
11/08/2000EP1050602A2 Process chamber with inner support
11/08/2000EP1050601A1 Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
11/08/2000EP1050600A1 Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
11/08/2000EP1050599A2 Method of forming interlayer insulating film
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