| Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
|---|
| 12/27/2000 | EP1063240A2 Improved organocopper precursor blend and method of depositing copper by chemical vapor deposition |
| 12/27/2000 | EP1063213A1 Ceramic superalloy articles |
| 12/27/2000 | EP1062377A1 Deposition of copper with increased adhesion |
| 12/27/2000 | EP1062088A1 Device for moulding flowable solids |
| 12/27/2000 | CN1278021A Low temp. chemical vapor-phase deposition equipment and method for synthesizing nanometer carbon tube using same |
| 12/27/2000 | CN1277966A Method for producing metal-ligand compositions |
| 12/26/2000 | US6167323 Method and system for controlling gas system |
| 12/26/2000 | US6167195 Multizone illuminator for rapid thermal processing with improved spatial resolution |
| 12/26/2000 | US6166427 Integration of low-K SiOF as inter-layer dielectric for AL-gapfill application |
| 12/26/2000 | US6166319 Photovoltaic element having first pin junction i-type layer of microcrystal silicon carbide and second pin junction i-type layer of microcrystal silicon; first junction closer to light incidence side; efficiency, low photodeterioration |
| 12/26/2000 | US6165916 Film-forming method and film-forming apparatus |
| 12/26/2000 | US6165875 Methods for modifying solid phase crystallization kinetics for A-Si films |
| 12/26/2000 | US6165622 Ferroelectric thin film, substrate provided with ferroelectric thin film, device having capacitor structure and method for manufacturing ferroelectric thin film |
| 12/26/2000 | US6165616 Synthetic diamond coatings with intermediate bonding layers and methods of applying such coatings |
| 12/26/2000 | US6165568 Methods of depositing silicon nitride on sodalime glass surfaces and to form field emission display devices; flat-panel displays |
| 12/26/2000 | US6165566 Useful for providing an effective barrier against gas permeability in containers and for extending shelf-life of containers, especially plastic evacuated blood collection devices |
| 12/26/2000 | US6165556 High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film |
| 12/26/2000 | US6165555 From 1,1,1,5,5,5-hexafluoro-2,4-pentanedionato(vinyltrimethoxysilan e) copper(i) and 1,1,1,5,5,5-hexafluoro-2,4-pentanedione |
| 12/26/2000 | US6165554 Vaporized polymer gas flowing at supersonic velocity |
| 12/26/2000 | US6165376 Work surface treatment method and work surface treatment apparatus |
| 12/26/2000 | US6165313 Downstream plasma reactor system with an improved plasma tube sealing configuration |
| 12/26/2000 | US6165311 Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| 12/26/2000 | US6165276 Apparatus for preventing plasma etching of a wafer clamp in semiconductor fabrication processes |
| 12/26/2000 | US6165274 Plasma processing apparatus and method |
| 12/26/2000 | US6165273 Equipment for UV wafer heating and photochemistry |
| 12/26/2000 | US6165272 Closed-loop controlled apparatus for preventing chamber contamination |
| 12/26/2000 | US6165271 Temperature controlled process and chamber lid |
| 12/26/2000 | US6164295 CVD apparatus with high throughput and cleaning method therefor |
| 12/26/2000 | US6164240 Semiconductor wafer processor, plasma generating apparatus, magnetic field generator, and method of generating a magnetic field |
| 12/26/2000 | CA2202225C Synthetic diamond wear component and method |
| 12/21/2000 | WO2000077837A1 Process for polycrystalline silicon film growth and apparatus for same |
| 12/21/2000 | WO2000077275A1 Method of processing films prior to chemical vapor deposition using electron beam processing |
| 12/21/2000 | WO2000076814A1 Belt retractor with a switchable force limiter |
| 12/21/2000 | WO2000076783A1 Substrate treatment method |
| 12/20/2000 | EP1061586A2 Transparent layered product and glass article using the same |
| 12/20/2000 | EP1061567A1 Method and apparatus for manufacturing an improved phosphosilicate glass film |
| 12/20/2000 | EP1061557A2 Substrate processing apparatus |
| 12/20/2000 | EP1061156A2 Method and system of post-deposition treating a carbon-containing layer on a substrate |
| 12/20/2000 | EP1061155A1 Vacuum processing apparatus |
| 12/20/2000 | EP1061154A1 Method and apparatus for doping of CVD diamonds and diamonds so made |
| 12/20/2000 | EP1061083A1 Adduct of a dialkylgalliumazide with hydrazine for MOCVD of GaN |
| 12/20/2000 | EP1061043A1 Low-temperature synthesis of carbon nanotubes using metal catalyst layer for decomposing carbon source gas |
| 12/20/2000 | EP1061041A1 Low-temperature thermal chemical vapor deposition apparatus and method of synthesizing carbon nanotube using the same |
| 12/20/2000 | EP1060783A1 Semiconductor processing exhaust abatement |
| 12/20/2000 | EP1060511A2 Reflow chamber and process |
| 12/20/2000 | EP1060501A1 Method and apparatus for predicting plasma-process surface profiles |
| 12/20/2000 | EP1060301A1 Ceiling arrangement for an epitaxial growth reactor |
| 12/20/2000 | EP1060288A1 Pcvd apparatus and a method of manufacturing an optical fiber, a preform rod and a jacket tube as well as the optical fiber manufactured therewith |
| 12/20/2000 | EP1060287A1 Method of depositing silicon with high step coverage |
| 12/20/2000 | EP1060286A1 Method of forming phosphosilicate glass having a high wet-etch rate |
| 12/20/2000 | EP1060285A1 Apparatus and method for depositing a semiconductor material |
| 12/20/2000 | EP0737256B1 Microwave plasma reactor |
| 12/20/2000 | CN1277735A Apparatus for manufacturing semiconductor device and its manufacturing method |
| 12/20/2000 | CN1277147A Low-temperature synthesis of carbon nanometre tube with metal catalytic layer of decomposing carbon source gas |
| 12/20/2000 | CN1277145A Method for synthetizing vertical arrangement high-purity carbon nanometre tube in large-scale on large size substrate using hot CVD method |
| 12/20/2000 | CN1059716C Method for synthesizing Beta-C3N4 superhard film material using radio-freq. chemical gas-phase sedimentation |
| 12/19/2000 | US6163007 Microwave plasma generating apparatus with improved heat protection of sealing O-rings |
| 12/19/2000 | US6162988 Photovoltaic element |
| 12/19/2000 | US6162734 Semiconductor processing using vapor mixtures |
| 12/19/2000 | US6162715 Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride |
| 12/19/2000 | US6162712 Platinum source compositions for chemical vapor deposition of platinum |
| 12/19/2000 | US6162709 Use of an asymmetric waveform to control ion bombardment during substrate processing |
| 12/19/2000 | US6162706 Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic |
| 12/19/2000 | US6162501 Thin films of metal oxide for semiconductors |
| 12/19/2000 | US6162499 Method of inhibiting deposition of material on an internal wall of a chemical vapor deposition reactor |
| 12/19/2000 | US6162488 Method for closed loop control of chemical vapor deposition process |
| 12/19/2000 | US6162412 Chemical vapor deposition method of high quality diamond |
| 12/19/2000 | US6162299 Multi-position load lock chamber |
| 12/19/2000 | US6162298 Sealed reactant gas inlet for a CVI/CVD furnace |
| 12/19/2000 | US6162297 Embossed semiconductor fabrication parts |
| 12/19/2000 | US6162293 Method for manufacturing ferroelectric thin film, substrate covered with ferroelectric thin film, and capacitor |
| 12/19/2000 | US6162010 Method for recovering object to be treated after interruption |
| 12/19/2000 | US6161575 Apparatus and method for preventing chamber contamination |
| 12/19/2000 | US6161500 Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions |
| 12/19/2000 | US6161499 Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma |
| 12/19/2000 | US6161498 Plasma processing device and a method of plasma process |
| 12/19/2000 | US6161311 System and method for reducing particles in epitaxial reactors |
| 12/19/2000 | CA2054257C A method of providing anti-oxidation protection for a composite material containing carbon, and a material protected thereby |
| 12/16/2000 | CA2303713A1 Method and apparatus for in-situ solid state doping of cvd diamonds and diamonds so made |
| 12/14/2000 | WO2000075972A1 Vacuum processing apparatus |
| 12/14/2000 | WO2000075971A1 Film-forming apparatus |
| 12/14/2000 | WO2000075970A1 Substrate support for plasma processing |
| 12/14/2000 | WO2000075394A1 A doped diamond-like carbon coating |
| 12/14/2000 | WO2000075087A1 Process for the production of photocatalytic coatings on substrates |
| 12/14/2000 | WO2000074932A1 Deposited thin film void-column network materials |
| 12/14/2000 | WO2000001615A9 Method and apparatus for the preparation of high purity phosphine or other gas |
| 12/14/2000 | CA2375138A1 Deposited thin film void-column network materials |
| 12/13/2000 | EP1059664A2 Method of depositing and etching dielectric layers |
| 12/13/2000 | EP1059296A1 Lewis adducts of aluminum organyls for preparation of alumina films by CVD |
| 12/13/2000 | EP1059295A1 Production of metal complexes by comproportionation |
| 12/13/2000 | EP1059266A2 Mass synthesis method of high purity carbon nanotubes vertically aligned over large-size substrate using thermal chemical vapor deposition |
| 12/13/2000 | EP1058945A1 Uniform heat trace and secondary containment for delivery lines for processing system |
| 12/13/2000 | CN1276741A Semiconductor mfg. system with getter safety device |
| 12/12/2000 | US6161054 Cell control method and apparatus |
| 12/12/2000 | US6160661 Infrared transmissive protective window |
| 12/12/2000 | US6160621 Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source |
| 12/12/2000 | US6160315 The alloying metal oxide having a thickness of about 6 nm on the oxide sidewalls encapsulates the copper layer to provide a barrier against copper migration, to form an adhesion layer over silicon dioxide |
| 12/12/2000 | US6159873 Method for producing semiconductor device and production apparatus of semiconductor device |
| 12/12/2000 | US6159872 F ion implantation into oxide films to form low-K intermetal dielectric |
| 12/12/2000 | US6159871 Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |