Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/2000
12/12/2000US6159867 RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
12/12/2000US6159855 Multi-metallic mixtures of metalloamide compounds.
12/12/2000US6159854 Process of growing conductive layer from gas phase
12/12/2000US6159853 Method for using ultrasound for assisting forming conductive layers on semiconductor devices
12/12/2000US6159852 Method of depositing polysilicon, method of fabricating a field effect transistor, method of forming a contact to a substrate, method of forming a capacitor
12/12/2000US6159763 Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element
12/12/2000US6159559 Heating substrate; providing a continuous plasma discharge about a surface of substrate to enable deposition of products on surface s providing a metered amount of tetramethylsilane (tms) in plasma; depositing silicon dioxide film
12/12/2000US6159533 Vapor deposition of thermally vaporized noble metal catalyst material onto gas permeable electrode
12/12/2000US6159333 Substrate processing system configurable for deposition or cleaning
12/12/2000US6159301 Resistant to fluorine based active species; easy replacing and cleaning
12/12/2000US6159300 Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device
12/12/2000US6159299 Wafer pedestal with a purge ring
12/12/2000US6159298 Thermal processing system
12/12/2000US6159297 Semiconductor process chamber and processing method
12/12/2000US6159287 Truncated susceptor for vapor-phase deposition
12/12/2000US6158688 Drive mechanism for transporting a tow at constant speed
12/12/2000US6158454 Sieve like structure for fluid flow through structural arrangement
12/12/2000US6158384 Plasma reactor with multiple small internal inductive antennas
12/12/2000US6158383 Plasma processing method and apparatus
12/12/2000US6158382 Method for forming a deposited film by plasma chemical vapor deposition and apparatus for forming a deposited film by plasma chemical vapor deposition
12/12/2000US6158226 Trapping device
12/12/2000CA2026979C Multilayer optical interference coating of complex curved substrates
12/07/2000WO2000074127A1 Plasma process device
12/07/2000WO2000074125A1 Apparatus for manufacturing semiconductor device
12/07/2000WO2000074124A1 Apparatus for manufacturing semiconductor device
12/07/2000WO2000074123A1 Transparent window of process chamber of process apparatus, and method of manufacture thereof
12/07/2000WO2000074122A1 Ozone treatment device of semiconductor process system
12/07/2000WO2000073534A1 Low temperature metal oxide coating formation
12/07/2000WO2000073533A1 Cooled window
12/07/2000WO2000073314A1 TETRAHYROFURAN-ADDUCTED GROUP II β-DIKETONATE COMPLEXES AS SOURCE REAGENTS FOR CHEMICAL VAPOR DEPOSITION
12/07/2000WO2000016380A9 Method and apparatus for cooling substrates
12/06/2000EP1058301A1 Method for modifying the surface of a substrate on which an insulating film is to be formed
12/06/2000EP1058292A2 Tapered shadow clamp ring and method to provide improved edge exclusion
12/06/2000EP1057796A1 Transparent layered product and glass article using the same
12/06/2000EP1057207A1 Rf powered plasma enhanced chemical vapor deposition reactor and methods
12/06/2000EP1057206A1 Low pressure inductively coupled high density plasma reactor
12/06/2000EP1057205A1 Rf powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
12/06/2000EP1056594A1 A-site and/or b-site modified pbzrtio3 materials and films
12/06/2000CN1275637A Diamond-cobalt boron compound wear-resistant composite coating of carbide tool and preparation process thereof
12/06/2000CN1275635A Large area diamond film material growth technology of nanometer diamond powder pretreatment
12/05/2000US6157867 Method and system for on-line monitoring plasma chamber condition by comparing intensity of certain wavelength
12/05/2000US6157774 Vapor generating method and apparatus using same
12/05/2000US6156916 Reacting an alkyl compound of group 13 element with an acyclic alcohol or with an aloxide of group 13 element to obtain dialkyl metal alkoxide, reacting it with alkali metal alkoxide, reacting product with divalent metal halide
12/05/2000US6156675 Method for enhanced dielectric film uniformity
12/05/2000US6156667 Methods and apparatus for plasma processing
12/05/2000US6156657 Pressing substrate onto holder in film forming apparatus; heating with lamp; separately introducing two active substances; vaporizing; forming metal film and depositing on substrate; exhausting unreacted active substances
12/05/2000US6156656 Process for manufacturing a semiconductor device
12/05/2000US6156653 Method of fabricating a MOS device
12/05/2000US6156439 Comprising a surface layer containing materials that reduce the tendency for hydrogen atoms in the hydrocarbon fluid to covalently bond with atoms in the surface layer, the materials being metal and metal compounds of aluminum, gold, 1a metals
12/05/2000US6156435 Formed by monomer gas pyrolysis and plasma excitation methods; can be carried out individually, sequentially, or simultaneously to produce flexible fluorocarbon polymer thin films on wires, twisted wires, tubes, complex microstructures
12/05/2000US6156395 Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby
12/05/2000US6156383 Vapor deposition of a group iv, v, vi metal carbide, nitride and/or carbonitride onto a substrate, then adding carbon dioxide to vapor deposition gas mixture to form a bond coat containing oxygen, topcoating with vapor deposited alumina
12/05/2000US6156382 Vapor deposition of a thin nucleating film using a tungsten source/reducing agent gas mixture, treating substrate in a group iii or v hydride ambient without tungsten, then adding tungsten source and second reducing agent for bulk deposition
12/05/2000US6156149 In situ deposition of a dielectric oxide layer and anti-reflective coating
12/05/2000US6156133 Method for manufacturing a product with a metallic basic body
12/05/2000US6156125 Adhesion apparatus
12/05/2000US6156122 Depositor for depositing a dielectric layer with fewer metallic impurities and a method for reducing the content of the metallic impurities in the dielectric layer by using this depositor
12/05/2000US6156121 Wafer boat and film formation method
12/05/2000US6156105 Semiconductor manufacturing system with getter safety device
12/05/2000US6155540 Apparatus for vaporizing and supplying a material
12/05/2000US6155201 Plasma processing apparatus and plasma processing method
12/05/2000US6155200 ECR plasma generator and an ECR system using the generator
12/05/2000US6155198 A vapor deposition processing chamber comprising a radio frequency signal connected to a showerhead and a second radio frequency signal connected to a wafer support
12/05/2000CA2149567C Coated cutting tool and method of making same
12/05/2000CA2025171C Deposition process for a protective amorph inorganic coating on a polymeris organic substrate
11/2000
11/30/2000WO2000071780A1 Dlc film, dlc-coated plastic container, and method and apparatus for manufacturing dlc-coated plastic container
11/30/2000WO2000071779A1 Pyrolytic carbon coating apparatus having feed gas actuator
11/30/2000WO2000071778A1 Protective gas shield apparatus
11/30/2000WO2000071550A1 Copper source reagent compositions, and method of making and using same for microelectronic device structures
11/30/2000WO2000071298A1 Superhard material article of manufacture
11/30/2000DE10011567A1 Luminescent material for light emitting element, comprises silicon and nitrogen, with the amount of silicon higher than stoichiometric amount of silicon in silicon nitride
11/30/2000CA2374512A1 Pyrolytic carbon coating apparatus having feed gas actuator
11/29/2000WO2001041202A1 Heat treating device and heat treating method
11/29/2000EP1056125A2 Lead germanate ferroelectric structure with multi-layered electrode
11/29/2000EP1056107A2 Key sheet and method for manufacturing the same
11/29/2000EP1055747A1 Apparatus and method for forming a film on a substrate
11/29/2000EP1055746A1 Method of chemical vapor depositing tungsten films
11/29/2000EP1055252A1 Substrate support for a thermal processing chamber
11/29/2000EP1055250A1 Plasma processing apparatus
11/29/2000EP1055014A1 Free floating shield and semiconductor processing system
11/29/2000EP1055012A2 Plasma processes for depositing low dielectric constant films
11/29/2000EP1054934A1 Alkane/polyamine solvent compositions for liquid delivery cvd
11/29/2000EP0840551A4 Microwave cvd method for deposition of robust barrier coatings
11/29/2000CN1274823A Gas-conveying quantitative distributing pipe
11/29/2000CN1274768A Gas distributing system
11/28/2000US6154582 Fabrication method of making silica-based optical devices and opto-electronic devices
11/28/2000US6154284 Chamber effluent monitoring system and semiconductor processing system comprising absorption spectroscopy measurement system, and methods of use
11/28/2000US6153542 Reacting silane and hydrogen peroxide; depressurization
11/28/2000US6153540 From tetraethoxy silane and triethyl phosphate in vapor phase
11/28/2000US6153529 Photo-assisted remote plasma apparatus and method
11/28/2000US6153524 Cluster tool method using plasma immersion ion implantation
11/28/2000US6153519 Method of forming a barrier layer
11/28/2000US6153515 Method of forming multilayered film
11/28/2000US6153327 Amorphous carbon comprising a dispersion containing a load of nobel metal electrocatalyst
11/28/2000US6153269 Monomer gas is exposed to a source of heat having a temperature sufficient to pyrolyze the monomer gas and produce a source of reactive cf2 species in the vicinity of the structure surface
11/28/2000US6153261 Self-decomposition of vapor deposited title silicon source to form a silicon nitride or oxynitride dielectric film on substrate with good step coverage and gap filling
11/28/2000US6153260 Method for heating exhaust gas in a substrate reactor
11/28/2000US6153013 Deposited-film-forming apparatus
11/28/2000US6153012 Device for treating a substrate
11/28/2000US6153010 Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device
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