| Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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| 01/30/2001 | US6179924 Heater for use in substrate processing apparatus to deposit tungsten |
| 01/30/2001 | US6179922 Chemical vapor deposition directly to a semiconductor substrate surface by heating a monomer in a gas chamber to vaporize and polymerize; passing polymer vapor to a connected processing chamber and depositing a thin uniform film |
| 01/30/2001 | US6179920 CVD apparatus for forming thin film having high dielectric constant |
| 01/30/2001 | US6179919 Apparatus for performing chemical vapor deposition |
| 01/30/2001 | US6179913 Compound gas injection system and methods |
| 01/30/2001 | US6179277 Liquid vaporizer systems and methods for their use |
| 01/30/2001 | US6178918 Plasma enhanced chemical processing reactor |
| 01/30/2001 | CA2202026C Method of making a diamond-coated composite body |
| 01/25/2001 | WO2001006044A1 Growth of epitaxial semiconductor material with improved crystallographic properties |
| 01/25/2001 | WO2001006043A1 Susceptorless semiconductor wafer epitaxial layer growth method |
| 01/25/2001 | WO2001006033A1 Method of coating an article |
| 01/25/2001 | WO2001006032A1 Method for forming metallic tungsten film |
| 01/25/2001 | WO2001006031A1 Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth |
| 01/25/2001 | WO2001005487A1 Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels |
| 01/25/2001 | WO2000066506B1 Highly tetrahedral amorphous carbon coating on glass |
| 01/25/2001 | WO2000058995A3 Apparatus for improving plasma distribution and performance in an inductively coupled plasma |
| 01/25/2001 | DE19934418A1 Verfahren zum Beschichten einer lokal unterschiedlich beanspruchten Komponente A method for coating a locally differently stressed component |
| 01/25/2001 | CA2379704A1 Method of coating an article |
| 01/24/2001 | EP1071141A2 Diamond semiconductor and method for the fabrication thereof. |
| 01/24/2001 | EP1071123A1 Method for forming film |
| 01/24/2001 | EP1071116A1 Method and apparatus for removing material from the periphery of a substrate, using a remote plasma source |
| 01/24/2001 | EP1070769A1 Process for coating a locally diversely stressed component |
| 01/24/2001 | EP1070336A1 Direct temperature control for a component of a substrate processing chamber |
| 01/24/2001 | EP1070161A1 A method and a device for epitaxial growth of objects by chemical vapour deposition |
| 01/24/2001 | EP0848711B1 Method for the selective hydrogenation of vinyl oxirane to butylene oxide |
| 01/24/2001 | CN1060983C Coated cutting tool |
| 01/23/2001 | US6177706 Field-effect thin-film transistor device |
| 01/23/2001 | US6177353 Metallization etching techniques for reducing post-etch corrosion of metal lines |
| 01/23/2001 | US6177200 Thermal barrier coating systems and materials |
| 01/23/2001 | US6177178 Coated milling insert and method of making it |
| 01/23/2001 | US6177149 Method of forming titanium film by CVD |
| 01/23/2001 | US6177148 For coating substrates; homogeneity of coated layer |
| 01/23/2001 | US6177147 Process and apparatus for treating a substrate |
| 01/23/2001 | US6177146 Densification of a porous structure (III) |
| 01/23/2001 | US6177145 Semiconductor processing method of making electrical contact to a node |
| 01/23/2001 | US6177142 Method of forming a film on a substrate |
| 01/23/2001 | US6177136 Coating substrate with silicon-containing protective layer by chemical vapor deposition using starting compound tri(dialkylaminosily)-amino-di(dialkylamino)borane |
| 01/23/2001 | US6177135 Low temperature CVD processes for preparing ferroelectric films using Bi amides |
| 01/23/2001 | US6177134 Preparing gaseous mixture comprising neutral gas and silane; providing gas stream comprising carrier gas and oxidizing gas; mixing gas stream with gaseous mixture to obtain final mixture |
| 01/23/2001 | US6177129 A surface treatment in vacuum station, controlling the timing process by a programmable process controller unit; batch processing; treating semiconductor wafers, memory discs, or machine components, tools |
| 01/23/2001 | US6177127 Method of monitoring emissivity |
| 01/23/2001 | US6177023 Method and apparatus for electrostatically maintaining substrate flatness |
| 01/23/2001 | US6176979 At least two surfaces of electro-conductive material are exposed to the vacuum atmosphere atlest one being inpart covered with a material of lower electroconductivity than the material of surface |
| 01/23/2001 | US6176936 Semiconductors; reductive decomposition of a metal halide |
| 01/23/2001 | US6176932 Thin film deposition apparatus |
| 01/23/2001 | US6176930 Apparatus and method for controlling a flow of process material to a deposition chamber |
| 01/23/2001 | US6176929 Thin-film deposition apparatus |
| 01/23/2001 | US6176198 Apparatus and method for depositing low K dielectric materials |
| 01/23/2001 | US6176153 Process for manufacturing an extrusion tool using a CVD process |
| 01/23/2001 | CA2105342C Method of forming silicon carbide |
| 01/18/2001 | WO2001005020A1 Radio frequency power source for generating an inductively coupled plasma |
| 01/18/2001 | WO2001004942A1 Chemical vapor deposition of silicon oxide films using alkylsiloxane oligomers with ozone |
| 01/18/2001 | WO2001004931A2 Method and apparatus for providing uniform gas delivery to substrates in cvd and pecvd processes |
| 01/18/2001 | WO2001004669A1 Narrow-band optical interference filter |
| 01/18/2001 | WO2001004668A1 Narrow-band optical interference filter |
| 01/18/2001 | WO2001004379A1 Installation and method for vacuum treatment or the production of powder |
| 01/18/2001 | WO2001004377A1 Seal means and its application in deposition reactor |
| 01/18/2001 | WO2001004376A1 A method of forming a silicon nitride layer on a semiconductor wafer |
| 01/18/2001 | WO2001004370A1 Single crystal tungsten alloy penetrator and method of making |
| 01/18/2001 | WO2001003858A1 Method and system for in situ cleaning of semiconductor manufacturing equipment using combination chemistries |
| 01/18/2001 | WO2001003856A1 Method of forming a thin metal layer on an insulating substrate |
| 01/18/2001 | DE19932082A1 Interferenzoptisches Schmalbandfilter Interference optical narrow-band filter |
| 01/18/2001 | DE10022333A1 Silicon carbide coated graphite component e.g. gas rectification tube, for silicon single crystal drawing apparatus, has graphite base adhered with primary and secondary layers of silicon carbide film |
| 01/18/2001 | CA2389593A1 Single crystal tungsten alloy penetrator and method of making |
| 01/18/2001 | CA2379077A1 Narrow-band optical interference filter |
| 01/17/2001 | EP1069611A2 Method and apparatus for forming a conductive via comprising a refractory metal |
| 01/17/2001 | EP1069610A2 Refractory metal deposition process for low contact resistivity to silicon and corresponding apparatus |
| 01/17/2001 | EP1069599A2 Apparatus for deposition of thin films on wafers |
| 01/17/2001 | EP1069208A2 Method of diffusing gas into a CVD chamber and gas diffusing means |
| 01/17/2001 | EP1069207A2 In-situ etch method for for cleaning a CVD chamber |
| 01/17/2001 | EP1068633A1 Method and device for specifically manipulating and depositing particles |
| 01/17/2001 | EP1068632A1 Contamination controlling method and plasma processing chamber |
| 01/17/2001 | EP1068480A1 Substrate support for a thermal processing chamber |
| 01/17/2001 | EP1068371A1 Deposition resistant lining for cvd chamber |
| 01/17/2001 | EP1068370A1 Multi-ledge substrate support for a thermal processing chamber |
| 01/17/2001 | EP1068214A1 Lewis base adducts of anhydrous mononuclear tris(beta-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same |
| 01/17/2001 | EP1068032A1 Container with material coating having barrier effect and method and apparatus for making same |
| 01/17/2001 | CN2415041Y Device for pulse laser deposition of large thin film |
| 01/17/2001 | CN1280705A Method and apparatus for treating the inside surface of plastic bottles in a plasma enhanced process |
| 01/17/2001 | CN1280657A Gas panel |
| 01/17/2001 | CN1280632A Method for depositing fine-grained alumina coatings on cutting tools |
| 01/17/2001 | CN1280631A Apparatus for surface modification of polymer, metal and ceramic materials using ion bean |
| 01/17/2001 | CN1280516A Gas Purification system with safety device and method for purifying gases |
| 01/17/2001 | CN1280392A Capacitor of somiconductor storage element |
| 01/17/2001 | CN1280391A Capacitor of semiconductor storage element and its producing method |
| 01/17/2001 | CN1280390A Capacitor of semiconductor storage element and its producing method |
| 01/17/2001 | CN1280209A Compound for forming A102 film by using chemical steam deposition and method for preparing said compound |
| 01/16/2001 | US6174809 Method for forming metal layer using atomic layer deposition |
| 01/16/2001 | US6174805 Setting temperature of evacuated reaction chamber to not less than temperature at which hydrogen chloride is produced by chlorine and hydrogen; feeding hydrogenated gas; placing substrate; evacuating; feeding titanium chloride and argon gas |
| 01/16/2001 | US6174599 Glazing panel provided with a conductive and/or low emissivity film |
| 01/16/2001 | US6174563 Forming an integrated circuit which includes a metal film layer for wiring |
| 01/16/2001 | US6174499 A semiconductor etching apparatus comprising a generator for generating a plasma in the reaction chamber to decompose and chemically activate the freon gas, then made into contact with a reactant to form a reaction product |
| 01/16/2001 | US6174377 Processing chamber for atomic layer deposition processes |
| 01/16/2001 | US6174376 Apparatus for evacuating a process chamber |
| 01/16/2001 | US6174373 Non-plasma halogenated gas flow prevent metal residues |
| 01/16/2001 | US6173674 Plasma reactor with a deposition shield |
| 01/16/2001 | US6173673 Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber |
| 01/16/2001 | US6173672 Diamond film deposition on substrate arrays |
| 01/11/2001 | WO2001003162A1 Low-pressure apparatus and pressure control valve |
| 01/11/2001 | WO2001003159A1 Gas distribution apparatus for semiconductor processing |