| Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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| 02/20/2001 | US6189482 High temperature, high flow rate chemical vapor deposition apparatus and related methods |
| 02/20/2001 | CA2127832C Cvd diamond radiation detector |
| 02/20/2001 | CA1341184C Method and apparatus for the plasma etching substrate cleaning or deposition of materials by d.c. glow discharge |
| 02/15/2001 | WO2001010795A1 Silicon nitride components with protective coating |
| 02/15/2001 | WO2001010725A1 Plastic container having a carbon-treated internal surface |
| 02/15/2001 | WO2000065631A3 Apparatus and method for exposing a substrate to plasma radicals |
| 02/14/2001 | EP1076111A2 Apparatus and method for selectively coating internal and external surfaces of an airfoil |
| 02/14/2001 | EP0857095A4 Anchored oxide coatings on hard metal cutting tools |
| 02/14/2001 | CN1284203A Method of eliminating edga effect in chemical vapor deposition of metal |
| 02/14/2001 | CN1283895A Film Resonator device and its mfg. method |
| 02/14/2001 | CN1283789A Polygon plane multipath component, and system contg. same and its method for use |
| 02/14/2001 | CN1283788A Method and appts for analyzing molecular sorts in vacuum by resonant wave and spectrum sensitivity |
| 02/13/2001 | US6188564 Method and apparatus for compensating non-uniform wafer processing in plasma processing chamber |
| 02/13/2001 | US6188134 Electronic devices with rubidium barrier film and process for making same |
| 02/13/2001 | US6188044 High-performance energy transfer system and method for thermal processing applications |
| 02/13/2001 | US6187693 Having a high dielectric constant suitable for use in a high density dram, and a small leakage current. |
| 02/13/2001 | US6187692 Method for forming an insulating film |
| 02/13/2001 | US6187691 Method of forming film on semiconductor substrate in film-forming apparatus |
| 02/13/2001 | US6187656 CVD-based process for manufacturing stable low-resistivity poly-metal gate electrodes |
| 02/13/2001 | US6187392 Positioning target comprising chemical vapor deposition precursor in chamber; transferring heat energy to selected target area of target to induce predetermined temperature increase; positioning deposition substrate precursor region |
| 02/13/2001 | US6187379 Fluidized bed coating process with liquid reagent |
| 02/13/2001 | US6187133 Gas manifold for uniform gas distribution and photochemistry |
| 02/13/2001 | US6187102 Thermal treatment apparatus |
| 02/13/2001 | US6187101 Substrate processing device |
| 02/13/2001 | US6187100 Produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment |
| 02/13/2001 | US6187080 Exhaust gas treatment apparatus including a water vortex means and a discharge pipe |
| 02/13/2001 | US6187072 Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions |
| 02/13/2001 | US6186154 Find end point of CLF3 clean by pressure change |
| 02/13/2001 | US6186153 A dry cleaning method to remove film deposits adhering to the inner walls of a semiconductor manufacturing apparatus that result from etching or ion sputtering residue using a two-step plasma treatment using gases of different reactivity |
| 02/13/2001 | US6186092 Apparatus and method for aligning and controlling edge deposition on a substrate |
| 02/13/2001 | US6186090 Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor |
| 02/13/2001 | US6185839 Semiconductor process chamber having improved gas distributor |
| 02/08/2001 | WO2001009931A1 Method for forming crystalline silicon nitride |
| 02/08/2001 | WO2001009926A1 Improved ladder boat for supporting wafers |
| 02/08/2001 | WO2001009647A1 Anti-reflection coatings and coated articles |
| 02/08/2001 | WO2001009407A1 SiC MATERIAL, SEMICONDUCTOR PROCESSING EQUIPMENT AND METHOD OF PREPARING SiC MATERIAL THEREFOR |
| 02/08/2001 | WO2001008570A1 A cutting blade for a surgical instrument |
| 02/07/2001 | EP1074588A2 Barrier coating and process for applying the same to plastic substrates |
| 02/07/2001 | EP1074287A2 Trap apparatus |
| 02/07/2001 | EP1074063A1 Three dimensional micromachined electromagnetic device and associated methods |
| 02/07/2001 | EP1074042A1 Synchronous multiplexed near zero overhead architecture for vacuum processes |
| 02/07/2001 | EP1074041A2 A high temperature multi-layered alloy heater assembly and related methods |
| 02/07/2001 | EP1073779A1 Reduced impedance chamber |
| 02/07/2001 | EP1073777A2 Film deposition system |
| 02/07/2001 | EP1073531A1 Device and method for alternating pressure flushing |
| 02/07/2001 | EP0946436A4 Organometallics for lightwave optical circuit applications |
| 02/07/2001 | CN1282801A Chemical vapour phase deposition equipment and method of synthesizing nanometer pipe using said equipment |
| 02/07/2001 | CN1061702C Oxide coated cutting tool |
| 02/06/2001 | US6184623 Method for controlling plasma-generating high frequency power, and plasma generating apparatus |
| 02/06/2001 | US6184158 Inductively coupled plasma CVD |
| 02/06/2001 | US6184157 Stress-loaded film and method for same |
| 02/06/2001 | US6184154 Method of processing the backside of a wafer within an epitaxial reactor chamber |
| 02/06/2001 | US6184135 Forming insulating layer having contact opening on substrate; insitu depositing titanium silicide layer and titanium layer; etching titanium layer; rapid thermal annealing titanium silicide layer forming titanium contact layer |
| 02/06/2001 | US6183831 Hard disk vapor lube |
| 02/06/2001 | US6183818 Forming a plasma of methane/hydrogen for vapor deposition of diamonds |
| 02/06/2001 | US6183816 Magnetic recording media on substrates from plasma |
| 02/06/2001 | US6183811 Method of repairing turbine airfoils |
| 02/06/2001 | US6183565 Method and apparatus for supporting a semiconductor wafer during processing |
| 02/06/2001 | US6183564 Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system |
| 02/06/2001 | US6183563 Apparatus for depositing thin films on semiconductor wafers |
| 02/06/2001 | US6183562 Thermal protection system for a chemical vapor deposition machine |
| 02/06/2001 | US6183552 Vapor deposition |
| 02/06/2001 | US6182605 Apparatus for particle beam induced modification of a specimen |
| 02/06/2001 | US6182603 Surface-treated shower head for use in a substrate processing chamber |
| 02/06/2001 | US6182602 Inductively coupled HDP-CVD reactor |
| 02/06/2001 | CA2107830C Method and apparatus for densification of porous billets |
| 02/01/2001 | WO2001008455A1 Method of promoting uniform process conditions in pecvd reactor for batch production of glazing panels |
| 02/01/2001 | WO2001007691A1 Apparatus for growing epitaxial layers on wafers |
| 02/01/2001 | WO2001007678A1 Plasma activated cvd method and device for producing a microcristalline si:h layer |
| 02/01/2001 | WO2001007677A1 Method and apparatus for manufacturing semiconductor device |
| 02/01/2001 | DE19936160A1 Process for conveying a non-condensed material comprises dropping the pressure to a distance controlled by a diaphragm using a sub-pressure produced by a suction stream in a chamber |
| 01/31/2001 | EP1073198A2 Thin film resonator apparatus and method of making same |
| 01/31/2001 | EP1073109A2 Single phase perovskite ferroelectric film on platinum electrode and method for forming same |
| 01/31/2001 | EP1073108A1 Chemical vapor deposition process for dielectric material |
| 01/31/2001 | EP1073106A2 Method for reducing oxidation of an interface of a semiconductor device and resulting device |
| 01/31/2001 | EP1073096A1 Semiconductor workpiece processing apparatus and method |
| 01/31/2001 | EP1072693A1 Chemical vapor deposition apparatus and method of synthesizing carbon nanotubes using the apparatus |
| 01/31/2001 | EP1072692A2 Method and assembly for assessing quality of a coating process |
| 01/31/2001 | EP1072570A1 Silicon carbide and process for its production |
| 01/31/2001 | EP1071834A1 Method of passivating a cvd chamber |
| 01/31/2001 | EP1071833A2 Method and apparatus for modifying the profile of high-aspect-ratio gaps using differential plasma power |
| 01/31/2001 | CN1282386A Growth of very uniform silicon carbide external layers |
| 01/31/2001 | CN1282099A Processing device and method for semiconductor workpiece |
| 01/31/2001 | CN1061387C Method for forming diamond-like carbon film (DLC), DLC film formed thereby, use of the same, field emitter array and field emitter cattodes |
| 01/31/2001 | CN1061386C 密封装置 Sealing device |
| 01/30/2001 | US6181069 High frequency discharging method and apparatus, and high frequency processing apparatus |
| 01/30/2001 | US6180926 Heat exchanger apparatus for a semiconductor wafer support and method of fabricating same |
| 01/30/2001 | US6180542 Nitriding and oxidation of tantalum compound to tantalum oxynitride; heat and plasma treatment |
| 01/30/2001 | US6180541 Preheating carrier gas; vaporizing organometallic compound; forming thin film on semiconductor |
| 01/30/2001 | US6180540 Method for forming a stabilized fluorosilicate glass layer |
| 01/30/2001 | US6180513 Apparatus and method for manufacturing a semiconductor device having a multi-wiring layer structure |
| 01/30/2001 | US6180484 Forming tungsten layer having surface on semiconductor substrate, whereby plurality of spires are formed on surface of tungsten layer; bombarding surface of tungsten layer with chemical plasma ions thereby rounding spires |
| 01/30/2001 | US6180420 Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates |
| 01/30/2001 | US6180223 Densification of a porous structure |
| 01/30/2001 | US6180191 Method for plasma deposition of a thin film onto a surface of a container |
| 01/30/2001 | US6180190 Vapor source for chemical vapor deposition |
| 01/30/2001 | US6180189 Activated nitrogen is generated by a high-pressure plasma process. |
| 01/30/2001 | US6180185 Method of forming a film on a substrate |
| 01/30/2001 | US6180049 Layer manufacturing using focused chemical vapor deposition |
| 01/30/2001 | US6179925 Method and apparatus for improved control of process and purge material in substrate processing system |