Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
03/2001
03/06/2001US6197121 Chemical vapor deposition apparatus
03/06/2001US6197120 Apparatus for coating diamond-like networks onto particles
03/06/2001US6197119 Method and apparatus for controlling polymerized teos build-up in vacuum pump lines
03/06/2001US6197118 Thin film deposition apparatus
03/06/2001US6197116 Plasma processing system
03/06/2001US6197102 Small amount of separation (segregation, precipitation) of excessive metallic elements' particles, little leakage current, hydrogen heat treatment resistance as well as voltage resistance
03/06/2001US6196155 Plasma processing apparatus and method of cleaning the apparatus
03/06/2001US6196154 Air lock for introducing substrates to and/or removing them from a treatment chamber
03/06/2001CA2225620C Process for the preparation of magnesium oxide films using organomagnesium compounds
03/06/2001CA2125430C Synchronized process for catalysis of electroless metal plating on plastic
03/01/2001WO2001015220A1 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
03/01/2001WO2001015212A1 Plasma processing apparatus and method of plasma processing
03/01/2001WO2001015210A1 Apparatus for forming polymer continuously on the surface of metal by dc plasma polymerization
03/01/2001WO2001015209A1 Plasma polymerizing apparatus having an electrode with a lot of uniform edges
03/01/2001WO2001015199A1 Electron beam plasma formation for surface chemistry
03/01/2001WO2001014619A1 Method and device for depositing materials with a large electronic energy gap and high binding energy
03/01/2001WO2000058995B1 Apparatus for improving plasma distribution and performance in an inductively coupled plasma
03/01/2001WO2000021139A8 Low stress polysilicon film and method for producing same
03/01/2001DE19952465C1 Production of an adhesive-tight amorphous hydrocarbon layer on a substrate surface for cutting tools uses ion-supported deposition during which the surface of the substrate electrode is temporarily cooled
03/01/2001DE19935046A1 Plasma-CVD-Verfahren und Vorrichtung zur Herstellung einer mikrokristallinen Si:H-Schicht auf einem Substrat sowie deren Verwendung Plasma CVD method and apparatus for producing a microcrystalline Si: H layer on a substrate and the use thereof
02/2001
02/28/2001EP1079671A2 Antenna device for generating inductively coupled plasma
02/28/2001EP1079425A1 Process and device for vacuum plasma treatment of substrate
02/28/2001EP1079423A1 Apparatus for gas processing
02/28/2001EP1079422A2 Method and apparatus for manufacturing semiconductor device
02/28/2001EP1079001A1 Dual fritted bubbler
02/28/2001EP1079000A1 Method for removing residue from an exhaust line
02/28/2001EP1078396A1 A two-step borophosphosilicate glass deposition process and related devices and apparatus
02/28/2001EP1078113A1 Energy transfer system and method for thermal processing applications
02/28/2001EP1078112A1 A sub-atmospheric chemical vapor deposition system with dopant bypass
02/28/2001EP1030788A4 Plasma processing methods and apparatus
02/27/2001US6195504 Liquid feed vaporization system and gas injection device
02/27/2001US6194691 Heating furnace and manufacturing method therefor
02/27/2001US6194628 Method and apparatus for cleaning a vacuum line in a CVD system
02/27/2001US6194314 Process for chemical vapor deposition layer production on a semiconductor surface with absorbing protective gasses
02/27/2001US6194310 Method of forming amorphous conducting diffusion barriers
02/27/2001US6194295 Production of a refractory metal by chemical vapor deposition of a bilayer-stacked tungsten metal
02/27/2001US6194292 Method of fabricating in-situ doped rough polycrystalline silicon using a single wafer reactor
02/27/2001US6194038 Variations in gas flow concentration
02/27/2001US6194037 Applying radio frequency to mixture of silicon hydride and nitrous oxide
02/27/2001US6194036 Deposition of coatings using an atmospheric pressure plasma jet
02/27/2001US6194030 Containing liner tube, gas supply means and gas flow resistor
02/27/2001US6194026 Dissolving embedded abrasive particles with hydroxide
02/27/2001US6194023 Method of manufacturing a poly-crystalline silicon film
02/27/2001US6193911 Combustion chemical vapor deposition (ccvd) solution in which is dissolved an additive which forms an electroconductivity adjusting metal oxide in the resulting thin film resistor
02/27/2001US6193813 Tungsten silicide wafer film that exhibits hysteresis when stress of film is determined
02/27/2001US6193811 Baking a semiconductor and isolation
02/27/2001US6193804 Apparatus and method for sealing a vacuum chamber
02/27/2001US6193803 Substrate holding apparatus for processing semiconductors
02/27/2001US6193802 Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment
02/27/2001US6193585 Method of polishing a hard material-coated wafer
02/27/2001US6193506 Apparatus and method for batch thermal conditioning of substrates
02/27/2001US6192979 Includes top functional layer capable of adjusting wetting behavior of base material, layer includes carbon and hydrogen and one of nonmetallic element and semimetallic element selected from 3rd, 4th, 5th, 6th, 7th groups of periodic table
02/27/2001US6192938 Gas panel
02/27/2001US6192919 Chemical delivery and containment system employing mobile shipping crate
02/27/2001US6192898 Method and apparatus for cleaning a chamber
02/27/2001US6192828 Thin film forming device for forming silicon thin film having crystallinity
02/27/2001US6192601 Method and apparatus for reducing particle contamination during wafer transport
02/22/2001WO2001013419A1 Processing apparatus and processing method
02/22/2001WO2001013415A1 Production method of semiconductor device and production device therefor
02/22/2001WO2001013404A1 Diamond coated parts in a plasma reactor
02/22/2001WO2001013054A1 Hot wall rapid thermal processor
02/22/2001WO2001012876A1 Process and composition for treating metals
02/22/2001WO2001012875A1 Film forming device
02/22/2001WO2001012874A1 Surface preparation of a substrate for thin film metallization
02/22/2001WO2001012873A1 Pulsed plasma processing method and apparatus
02/22/2001WO2001012634A1 Group(iii)-metal-hydrides with a guanidino-type ligand
02/22/2001WO2001012433A2 Nanostructure coatings
02/22/2001WO2001012300A1 Method for reducing the amount of perfluorocompound gas contained in exhaust emissions from plasma processing
02/22/2001CA2383485A1 Process and composition for treating metals
02/21/2001EP1077480A1 Method and apparatus to enchance properties of Si-O-C low K films
02/21/2001EP1077479A1 Post-deposition treatment to enchance properties of Si-O-C low K film
02/21/2001EP1077477A1 Surface treatment of C-doped Si02 film to enhance film stability during 02 ashing
02/21/2001EP1077274A1 Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes
02/21/2001EP1077270A1 Transition metal boride coatings
02/21/2001EP1076732A1 Injector for reactor
02/21/2001EP1076729A1 Low pressure purging method
02/21/2001CN1285008A PCVD apparatus and a method of manufacturing optical flber, preform rod and jacket tube as well as the optical fiber manufactured therewith
02/21/2001CN1285007A Method for selectively depositing bismuth based ferroelectric films
02/21/2001CN1285006A Free floating shield and semiconductor processing system
02/21/2001CN1284742A Method for manufacturing semiconductor device with semiconductor layer
02/21/2001CN1284613A Collecting device
02/20/2001US6191399 System of controlling the temperature of a processing chamber
02/20/2001US6191390 Heating element with a diamond sealing material
02/20/2001US6191388 Thermal processor and components thereof
02/20/2001US6191054 Method for forming film and method for fabricating semiconductor device
02/20/2001US6191011 Selective hemispherical grain silicon deposition
02/20/2001US6190925 Epitaxially grown lead germanate film and deposition method
02/20/2001US6190732 Supporting substrate on chuck disposed in reaction chamber proximate a showerhead, reaction chamber having exhaust port, positioning the chuck to restrict flow path from showerhead to exhaust port, dispensing process gas over substrate
02/20/2001US6190725 Coating method for the preparation of coated nuclear fuels with carbides borides or nitrides by using high temperature and high pressure combustion synthesis
02/20/2001US6190629 Removing hazardous gas from exhaust stream; air pollution control; nontoxic, corrosion resistance
02/20/2001US6190511 Sputtering; vacuum chamber, baffle, pump for pumping gases, screen chemical
02/20/2001US6190495 Magnetron plasma processing apparatus
02/20/2001US6190460 Apparatus for low pressure chemical vapor depostion
02/20/2001US6190457 CVD system and CVD process
02/20/2001US6190453 Growth of epitaxial semiconductor material with improved crystallographic properties
02/20/2001US6190233 Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
02/20/2001US6189570 Gas panel
02/20/2001US6189485 Plasma CVD apparatus suitable for manufacturing solar cell and the like
02/20/2001US6189484 Plasma reactor having a helicon wave high density plasma source
02/20/2001US6189483 Process kit