| Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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| 04/04/2001 | EP1089325A2 Support frame for substrates |
| 04/04/2001 | EP1089319A1 Uniform gas distribution in large area plasma treatment device |
| 04/04/2001 | EP1088874A1 Moisture insensitive electroluminescent phosphor |
| 04/04/2001 | EP1088332A2 Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber |
| 04/04/2001 | EP1088331A1 Cleaning process end point determination using throttle valve position |
| 04/04/2001 | EP1088330A1 Cvd apparatus and process for depositing titanium films |
| 04/04/2001 | EP1088329A1 Method and apparatus for stabilising a plasma |
| 04/04/2001 | EP1088118A1 Method for applying a lubricating layer on an object and object with an adhesive lubricating layer |
| 04/04/2001 | EP1088116A1 Method for applying a coating system to surfaces |
| 04/04/2001 | EP1087857A1 Diamond cutting tool |
| 04/04/2001 | EP0852628B1 Process chamber with inner support |
| 04/04/2001 | EP0848658A4 Chemical vapor deposition and powder formation using thermal spray with near supercritical and supercritical fluid solutions |
| 04/04/2001 | EP0839217A4 A plasma enhanced chemical processing reactor and method |
| 04/04/2001 | CN1290309A Organocuprous precursors for chemical vapor deposition of copper film |
| 04/04/2001 | CN1290308A Plasma reactor with a deposition shield |
| 04/04/2001 | CN1289866A Process for growing gallium nitride and its compound film |
| 04/04/2001 | CN1289860A Chemical vapor phase deposition apparatus, its purification and apparatus for manufacturing semiconductors |
| 04/04/2001 | CN1289816A Humidity insensitive electroluminescent phosphor |
| 04/03/2001 | US6212059 Capacitor including barium strontium titanate film |
| 04/03/2001 | US6211495 Temperature control system for a thermal reactor |
| 04/03/2001 | US6211082 Chemical vapor deposition of tungsten using nitrogen-containing gas |
| 04/03/2001 | US6211081 Method of manufacturing a semiconductor device in a CVD reactive chamber |
| 04/03/2001 | US6211080 Repair of dielectric-coated electrode or circuit defects |
| 04/03/2001 | US6211072 Fabricating a titanium nitride layer on an underlying structure. tetrakis-dimethyl-amino-titanium vapor is decomposed to deposit a layer containing titanium nitride, |
| 04/03/2001 | US6211066 Electronic devices with barium barrier film and process for making same |
| 04/03/2001 | US6211065 Method of depositing and amorphous fluorocarbon film using HDP-CVD |
| 04/03/2001 | US6211043 Thermal decomposition of a metal organic compound and a solar cell using the above thin film, metal sulfide thin films of high purity, density and quality for photoelectric devices or solarcells |
| 04/03/2001 | US6210813 Disrupted grain structure and smaller grain sizes; increases the resistance of the material to stress cracks in subsequent thermal processing and reduces the overall residual stress of the material |
| 04/03/2001 | US6210754 Providing level-adjusting devices mounted on heater platform, wherein the turning of one or more of the level-adjusting devices allows positioning of the heater platform relative to the lower surface of the shower head; integrated circuits |
| 04/03/2001 | US6210749 Applying fillerless coating formulation comprising hydrogen silsesquioxane resin onto substrate to form film; heating film in inert or oxygen containing atmosphere to produce insoluble coating free of cracks; depositing silicon dioxide layer |
| 04/03/2001 | US6210745 Method of quality control for chemical vapor deposition |
| 04/03/2001 | US6210592 Deposition of resistor materials directly on insulating substrates |
| 04/03/2001 | US6210487 Disposable seal system with integral buffer |
| 04/03/2001 | US6210486 CVD film forming method in which a film formation preventing gas is supplied in a direction from a rear surface of an object to be processed |
| 04/03/2001 | US6210485 Chemical vapor deposition vaporizer |
| 04/03/2001 | US6210483 Anti-notch thinning heater |
| 04/03/2001 | US6210482 Apparatus for feeding gases for use in semiconductor manufacturing |
| 04/03/2001 | US6209484 Method and apparatus for depositing an etch stop layer |
| 04/03/2001 | US6209483 Apparatus and method for removing silicon dioxide residues from CVD reactors |
| 04/03/2001 | US6209482 Large area microwave plasma apparatus with adaptable applicator |
| 04/03/2001 | US6209221 Wafer rack provided with a gas distribution device |
| 04/03/2001 | US6209220 Apparatus for cooling substrates |
| 04/03/2001 | CA2196589C Titanium nitride doped with boron, substrate coating based on this new compound, with good hardness conferring very good resistance to wear, and parts bearing such a coating |
| 03/29/2001 | WO2001022479A1 Gas distribution apparatus for semiconductor processing |
| 03/29/2001 | WO2001022478A1 Semiconductor processing equipment having radiant heated ceramic liner |
| 03/29/2001 | WO2001022471A1 Semiconductor processing equipment having tiled ceramic liner |
| 03/29/2001 | WO2000070117A8 Low-temperature compatible wide-pressure-range plasma flow device |
| 03/29/2001 | DE19945299A1 Plasmabeschichtungsverfahren und dreidimensionales Kunststoffsubstrat mit einer metallhaltigen Beschichtung auf der Kunststoffoberfläche Plasma coating method, and three-dimensional plastic substrate having a metal-containing coating on the plastic surface |
| 03/29/2001 | DE10046052A1 Zuführung von flüssigen Vorläufern zu Halbleiterbearbeitungsreaktoren Introduction of liquid precursors to semiconductor processing reactors |
| 03/28/2001 | EP1087437A2 A multistep chamber cleaning process using a remote plasma that also enhances film gap fill |
| 03/28/2001 | EP1087430A2 A method and apparatus for integrating a metal nitride film in a semiconductor device |
| 03/28/2001 | EP1087426A2 Integrated method and apparatus for forming an enhanced capacitor |
| 03/28/2001 | EP1087036A1 Method and apparatus for observing porous amorphous film, and method and apparatus for forming the same |
| 03/28/2001 | EP1087035A1 Method and apparatus for formation of thin film |
| 03/28/2001 | EP1087034A1 Plasma coating method and three dimentional coated substrate |
| 03/28/2001 | EP1086489A1 Chemical vapor deposition fabrication of hybrid electrodes for ferroelectric device structures |
| 03/28/2001 | EP1086482A1 Gas distribution system |
| 03/28/2001 | EP1086481A1 Chamber having improved process monitoring window |
| 03/28/2001 | EP1086355A1 Ellipsometric method and control device for making a thin-layered component |
| 03/28/2001 | EP1086260A1 Oxygen-argon gas mixture for precleaning in vacuum processing system |
| 03/28/2001 | EP1086259A1 A method and apparatus for forming a ti doped ta2o5 layer |
| 03/28/2001 | CN1289405A Wafer carrier and semiconductor apparatus for processing a semiconductor substrate |
| 03/28/2001 | CN1288975A Alpha-SiCoF film as insulating dielectric with low dielectric constant and its preparation |
| 03/27/2001 | US6208453 Oriented niobate ferroelectric thin films for electrical and optical devices |
| 03/27/2001 | US6208234 Resistors for electronic packaging |
| 03/27/2001 | US6208033 A memory, comprising a memory array, control circuit and address logic, having contact(s) made by reacting titanium tetrachloridesilane to hydrogen to form titanium silicide |
| 03/27/2001 | US6207937 Temperature control system for a thermal reactor |
| 03/27/2001 | US6207844 Thin films |
| 03/27/2001 | US6207590 Flowing silane into the process chamber; flowing n2o into the process chamber; generating a rf signal at a first predetermined power at a first frequency; and generating a rf signal at a second predetermined power at a second frequency. |
| 03/27/2001 | US6207589 Method of forming a doped metal oxide dielectric film |
| 03/27/2001 | US6207586 Oxide/nitride stacked gate dielectric and associated methods |
| 03/27/2001 | US6207585 Method of forming stacked insulating film and semiconductor device using the same |
| 03/27/2001 | US6207558 For improved via fill in high aspect ratio sub-micron apertures at low temperature, particularly at the contact level on a substrate. |
| 03/27/2001 | US6207489 Dielectric film includes a first dielectric layer deposited at a first temperature selected from a designated temperature range, and a second dielectric layer deposited at a second temperature different from the first temperature |
| 03/27/2001 | US6207487 Method for forming dielectric film of capacitor having different thicknesses partly |
| 03/27/2001 | US6207305 Corrosion-resistant members against a chlorine-based gas |
| 03/27/2001 | US6207304 Substrate with ammonia-free silicon oxynitride passivation film |
| 03/27/2001 | US6207302 Electroluminescent device and method of producing the same |
| 03/27/2001 | US6207281 Electrostatic-erasing abrasion-proof coating and method for forming the same |
| 03/27/2001 | US6207263 Anti-reflection film and process for preparation thereof |
| 03/27/2001 | US6207262 Coated cemented carbide endmill having hard-material-coated-layers excellent in adhesion |
| 03/27/2001 | US6207238 Flash evaporating a crosslinkable monomer into a polymer with the selected index of refraction, forming an evaporate, passing it to a glow discharge electrode creating a monomer plasma, cryocondensing plasma on a substrate and |
| 03/27/2001 | US6207233 Positioning airfoil within internal space in coating chamber, placing activator within internal space below airfoil, placing chemical coating composition within annular space, closing, heating chamber to form coating |
| 03/27/2001 | US6207232 Producing bis(ethylcyclopentadineyl)ruthenium containing less than eleven parts per million metallic impurities by reacting ruthenium chloride trihydrate and ethyl cyclopentadiene with zinc powder in alcohol solvent; vaporizing to form film |
| 03/27/2001 | US6207006 Vacuum processing apparatus |
| 03/27/2001 | US6207005 Cluster tool apparatus using plasma immersion ion implantation |
| 03/27/2001 | US6206976 Deposition apparatus and related method with controllable edge exclusion |
| 03/27/2001 | US6206973 Chemical vapor deposition system and method |
| 03/27/2001 | US6206972 Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes |
| 03/27/2001 | US6206971 Integrated temperature controlled exhaust and cold trap assembly |
| 03/27/2001 | US6206970 Semiconductor wafer processor, semiconductor processor gas filtering system and semiconductor processing methods |
| 03/27/2001 | US6206967 Low resistivity W using B2H6 nucleation step |
| 03/27/2001 | US6206012 Method of avoiding wall particle contamination in depositing films |
| 03/27/2001 | CA2194323C Apparatus and method for plasma processing |
| 03/22/2001 | WO2001020687A1 New methods of fabricating devices and semiconductor layers comprising cadmium mercury telluride, mercury telluride, and cadmium telluride |
| 03/22/2001 | WO2001020652A1 Method and apparatus for cleaning film deposition device |
| 03/22/2001 | WO2001020640A1 Device and method for generating a local plasma by micro-structure electrode discharges with microwaves |
| 03/22/2001 | WO2001020638A1 A surface treatment process used in growing a carbon film |
| 03/22/2001 | WO2001020057A1 Method and device for producing process gas-vapor mixtures |
| 03/22/2001 | WO2001020056A1 Substrate surface preparation |