Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
04/2001
04/19/2001WO2000068472A8 Truncated susceptor for vapor-phase deposition
04/19/2001DE19947258A1 Production of a heat insulating layer containing zirconium oxide on a component, e.g. turbine blade involves using plasma flash evaporation of a liquid aerosol to form the layer
04/19/2001DE19929615C1 Vorrichtung und Verwendung der Vorrichtung zur Überwachung von absichtlichen oder unvermeidbaren Schichtabscheidungen A device and use of the device for monitoring of deliberate or unavoidable layer depositions
04/18/2001EP1092688A1 Compounds and compositions for coating glass and coated glass substrates
04/18/2001EP1092474A2 Chemical delivery system with ultrasonic fluid sensors
04/18/2001EP1092233A1 Method of forming a thin film
04/18/2001EP1091965A1 Precursors for growth of heterometal-oxide films by mocvd
04/18/2001CN1292040A Method of coating and annealing large area glass substrates
04/17/2001US6218735 Process to improve adhesion of cap layers in intergrated circuits
04/17/2001US6218734 Copper adhered to a diffusion barrier surface
04/17/2001US6218702 Microcrystal silicon film and its manufacturing method, and photoelectric conversion device and its manufacturing method
04/17/2001US6218518 For forming group ii thin films on substrates for microelectronic device applications such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, holographic storage
04/17/2001US6218320 Method for improving the uniformity of wafer-to-wafer film thickness
04/17/2001US6218319 Method of forming an arsenic silicon glass film onto a silicon structure
04/17/2001US6218312 Plasma reactor with heated source of a polymer-hardening precursor material
04/17/2001US6218301 Treating substrate with dielectric material thereon using gas mixture comprising silicon compound; forming tungsten films on substrate
04/17/2001US6218300 Placing substrate in deposition chamber; providing deposition gas mix comprising sources of tantalum, titanium, and oxygen containing gas into chamber; decomposing source of tantalum and titanium; reacting to form dielectric layer film
04/17/2001US6218299 Semiconductor device and method for producing the same
04/17/2001US6218298 Heating silicon substrate while flowing mixture consisting of tungsten fluoride(wf.sub.6), hydrogen and silicon hydride(sih.sub.4) for forming over walls of trench a nucleation film and to fill trench
04/17/2001US6218293 Using a diffusion furnace
04/17/2001US6218288 Multiple step methods for forming conformal layers
04/17/2001US6218268 Two-step borophosphosilicate glass deposition process and related devices and apparatus
04/17/2001US6218212 Apparatus for growing mixed compound semiconductor and growth method using the same
04/17/2001US6217952 Method of forming films over inner surface of cylindrical member
04/17/2001US6217947 Vapor deposition of polymers in a vacuum
04/17/2001US6217937 Organometallic vapor phase epitaxy; a cold wall reactor; inner wall, central cavity with an open and closed end and a heater, outer wall; space between inner and outer provides a reactor cell with a susceptor rotatably mounted
04/17/2001US6217724 Coated platen design for plasma immersion ion implantation
04/17/2001US6217715 Coating of vacuum chambers to reduce pump down time and base pressure
04/17/2001US6217662 Susceptor designs for silicon carbide thin films
04/17/2001US6217661 Plasma processing apparatus and method
04/17/2001US6217660 Method for cleaning a throttle valve and apparatus
04/17/2001US6217659 Dynamic blending gas delivery system and method
04/17/2001US6217658 Sequencing of the recipe steps for the optimal low-dielectric constant HDP-CVD Processing
04/17/2001US6217651 Method for correction of thin film growth temperature
04/17/2001US6217647 Method for producing a monocrystalline layer of a conducting or semiconducting material
04/17/2001US6217645 Method of depositing films by using carboxylate complexes
04/17/2001US6217640 Exhaust gas treatment apparatus
04/17/2001US6217633 An operation of switching between introduction of the exhaust gas to a recovery system and exhaustion of the exhaust gas to exhaust system is carried out depending on the content of impurity contained in exhaust gas for recovery ot noble gas
04/17/2001US6217272 In-line sputter deposition system
04/17/2001US6216708 Provide a metalorganic precursor to a first vaporizer, transport produced vapor to a deposition chamber, measure the build-up deposit and cut off metalorganic supply when preset level reached, and provide a cleaning fluid to remove deposit
04/17/2001US6216632 Plasma processing system
04/12/2001WO2001025504A1 Micro three-dimensional structure, production method therefor and production device therefor
04/12/2001WO2001025503A1 Glass container coating hood
04/12/2001WO2001025502A1 COMPOSITION AND METHOD FOR CVD DEPOSITION OF Zr/Hf SILICATE FILMS
04/12/2001WO2001025167A1 Process for cleaning ceramic articles
04/12/2001WO2001025148A1 Method for the production of single isotope silicon si-28
04/12/2001WO2000047796A8 Tungsten carbide coatings and method for producing the same
04/12/2001DE19943953A1 Vorrichtung und Verfahren zur Erzeugung eines lokalen Plasmas durch Mikrostrukturelektrodenentladungen mit Mikrowellen Apparatus and method for generating a local plasma by microwave discharge electrodes microstructure
04/12/2001CA2386657A1 Glass container coating hood
04/11/2001EP1091020A1 A method of applying a bond coating and a thermal barrier coating on a metal substrate, and related articles
04/11/2001EP1091019A1 Vacuum exhaust system
04/11/2001EP1091018A1 Purification, analysis and deposition of titanium amides
04/11/2001EP1090693A1 Ultrasonic enhancement of cleaning of a liquid delivery system
04/11/2001EP1090429A2 Multilayer semiconductor structure with phosphide-passivated germanium substrate
04/11/2001EP1090420A1 Endpoint detection in the fabrication of electronic devices
04/11/2001EP1090417A1 Method for single chamber processing of pecvd-ti and cvd-tin films in ic manufacturing
04/11/2001EP1090159A1 Deposition of coatings using an atmospheric pressure plasma jet
04/11/2001EP1089938A1 Free-standing and aligned carbon nanotubes and synthesis thereof
04/11/2001EP1089874A1 LOW $g(k) DIELECTRIC INORGANIC/ORGANIC HYBRID FILMS AND METHOD OF MAKING
04/11/2001EP0892861B1 Boron and nitrogen containing coating and method for making
04/11/2001EP0832310A4 Electrically tunable coatings
04/11/2001EP0779941B1 A process for treating aluminium alloys
04/11/2001CN1291241A Apparatus and method for depositing a semiconductor material
04/11/2001CN1290769A Nanometer silicon film and its preparing process
04/10/2001US6215188 Low temperature aluminum reflow for multilevel metallization
04/10/2001US6215106 Thermally processing a substrate
04/10/2001US6215087 Plasma film forming method and plasma film forming apparatus
04/10/2001US6214751 Method for forming thin film in fabricating semiconductor device
04/10/2001US6214729 Forming metal-containing film from transition metal complex precursor composition on surface of semiconductor substrate or assembly
04/10/2001US6214726 Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by same
04/10/2001US6214720 Plasma process enhancement through reduction of gaseous contaminants
04/10/2001US6214714 Forming titanium film on substrate, forming intermediate layer comprising silicon on titanium film, forming titanium nitride film on intermediate layer, wherein intermediate layer protects titanium film from chemical attack during process
04/10/2001US6214713 Two step cap nitride deposition for forming gate electrodes
04/10/2001US6214706 Hot wire chemical vapor deposition method and apparatus using graphite hot rods
04/10/2001US6214651 Making vacuum diode by providing collector and emitter, wherein at least one of said collector or emitter comprises doped carbonaceous material to reduce threshold voltage for emission of electrons from said collector or emitter
04/10/2001US6214479 Covered member and method of producing the same
04/10/2001US6214474 Oxidation protective coating for refractory metals
04/10/2001US6214473 Corrosion-resistant multilayer coatings
04/10/2001US6214247 Substrate treatment method
04/10/2001US6214160 Method and apparatus for removing particulates from semiconductor substrates in plasma processing chambers
04/10/2001US6214130 Supplying cleaning gas comprising 1% to 5% of oxygen and high-purity argon into pipe while heating pipe by changing temperature elevation rate step by step to effectively remove organic matter from the inner wall surface of the pipe
04/10/2001US6214123 Chemical vapor deposition systems and methods for depositing films on semiconductor wafers
04/10/2001US6214121 Pedestal with a thermally controlled platen
04/10/2001US6214116 For processing gallium nitride based semiconductors; high quality epitaxial growth because no dust is produced
04/10/2001US6214105 Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition
04/10/2001US6213478 Holding mechanism for a susceptor in a substrate processing reactor
04/10/2001US6213049 Nozzle-injector for arc plasma deposition apparatus
04/05/2001WO2001024581A1 Multi-zone resistance heater
04/05/2001WO2001024247A1 Electron beam treatment of fluorinated silicate glass
04/05/2001WO2001024227A2 IMPROVED PECVD AND CVD PROCESSES FOR WNx DEPOSITION
04/05/2001WO2001024221A1 Voltage control sensor and control interface for radio frequency power regulation in a plasma reactor
04/05/2001WO2001024220A2 Uniform gas distribution in large area plasma treatment device
04/05/2001WO2001023830A1 Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
04/05/2001WO2001023636A1 Method and apparatus for controlling chamber surfaces in a semiconductor processing reactor
04/05/2001WO2001023303A1 Method for producing a nanotube layer on a substrate
04/05/2001WO2000067311A3 Method for producing a wafer support in a high-temperature cvd reactor
04/05/2001US20010000160 Method for treatment of semiconductor substrates
04/05/2001US20010000146 Method for reducing by-product deposition in wafer processing equipment.
04/05/2001US20010000098 Equipment for UV wafer heating and photochemistry
04/05/2001DE19929306A1 Verfahren zur Herstellung einer strukturierten Edelmetallschicht A method for producing a structured layer of precious metal