Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
05/2001
05/22/2001US6234679 Rolling bearing with coated element
05/22/2001US6234107 Auxiliary vacuum chamber and vacuum processing unit using same
05/17/2001WO2001035453A1 Heat treatment device
05/17/2001WO2001034871A1 Apparatus and method for performing simple chemical vapor deposition
05/17/2001WO2001034382A1 Aerogel substrate and method for preparing the same
05/17/2001US20010001297 Forming a titanium film upon a substrate, forming an intermediate layer comprising silicon upon said titanium film, and forming a titanium nitride film upon said intermediate layer; barrier
05/17/2001US20010001191 Method for forming dielectric layers
05/17/2001US20010001185 Plasma processing apparatus and method of cleaning the apparatus
05/17/2001US20010001175 Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using differential plasma power
05/17/2001DE19940033A1 Verfahren und Vorrichtung zum Abscheiden von Schichten auf rotierenden Substraten in einem allseits beheizten Strömungskanal Method and apparatus for depositing layers on rotating substrates in a well-heated flow channel
05/17/2001DE10055431A1 Production of a capacitor used in the production of DRAMs comprises forming a lower electrode on a semiconductor substrate, depositing an amorphous thin layer and forming an upper electrode
05/16/2001EP1100121A2 Process for forming low k silicon oxide dielectric material while suppressing pressure spiking and inhibiting increase in dielectric constant
05/16/2001EP1100119A1 Plasma processing method
05/16/2001EP1100116A1 Method for relaxing stress in blanket tungsten film formed by chemical vapor deposition
05/16/2001EP1100115A1 Device and method for plasma processing
05/16/2001EP1099779A1 Surface treatment apparatus
05/16/2001EP1099778A2 Trap apparatus
05/16/2001EP1099241A2 Gas flow control in a substrate processing system
05/16/2001EP1099008A1 Cvd apparatus
05/16/2001EP1099007A1 Susceptor for barrel reactor
05/16/2001EP1099006A1 Liquid precursor for chemical vapor deposition
05/16/2001EP1099005A1 Material deposition
05/16/2001EP1098845A2 New class of diamond-based materials and techniques for their synthesis
05/16/2001CN1295342A Manufacture of capacitor for semiconductor device
05/16/2001CN1295341A Method for manufacture of Ta2O5 capacitor using Ta2O5 film as dielectric film
05/16/2001CN1065926C Infrared anti-reflection filter window of diamond and its preparing method
05/16/2001CN1065925C Low-temp, method and device for preparation of large area eka-diamond carbon film
05/15/2001US6232706 Self-oriented bundles of carbon nanotubes and method of making same
05/15/2001US6232658 Process to prevent stress cracking of dielectric films on semiconductor wafers
05/15/2001US6232580 Apparatus for uniform gas and radiant heat dispersion for solid state fabrication processes
05/15/2001US6232248 Single-substrate-heat-processing method for performing reformation and crystallization
05/15/2001US6232246 Method of fabricating semiconductor device
05/15/2001US6232234 Method of reducing in film particle number in semiconductor manufacture
05/15/2001US6232216 Thin film forming method
05/15/2001US6232204 Semiconductor manufacturing system with getter safety device
05/15/2001US6232196 Method of depositing silicon with high step coverage
05/15/2001US6232135 Passivation of ink jet printheads
05/15/2001US6231933 Bellow disturbance and sonic disturbance in interior of reactor reducting thickness of gas boundary layer
05/15/2001US6231923 Forming monolithic disk shaped ceramics, using tools, shafts and vapor deposition
05/15/2001US6231918 Film on integrated circuits with oxide layers
05/15/2001US6231777 Surface treatment method and system
05/15/2001US6231674 Wafer edge deposition elimination
05/15/2001US6231673 Manufacturing method of semiconductor wafer, semiconductor manufacturing apparatus, and semiconductor device
05/15/2001US6231672 Apparatus for depositing thin films on semiconductor wafer by continuous gas injection
05/15/2001US6231658 Chemical vapor deposition source for depositing lead zirconate titanate film
05/15/2001US6230652 Apparatus and methods for upgraded substrate processing system with microwave plasma source
05/15/2001US6230651 Gas injection system for plasma processing
05/10/2001WO2001033619A1 Gate dielectrics and method of making with binary non-crystaline analogs of silicon dioxide
05/10/2001WO2001033617A1 Semiconductor-manufacturing apparatus
05/10/2001WO2001033616A1 Method and apparatus for thin film deposition
05/10/2001WO2001033615A2 Method and apparatus for supercritical processing of multiple workpieces
05/10/2001WO2001032966A1 Method for producing an initial polycrystalline silicon in the form of plates having a large surface and chamber for the precipitation of silicon
05/10/2001WO2001032950A1 Deposition of pyrocarbon
05/10/2001WO2001032799A1 Particle dispersions
05/10/2001WO2001032513A1 Nitrogen-free dlc film coated plastic container, and method and apparatus for manufacturing the same
05/10/2001WO2001032359A2 Ultrasonic metal finishing involving cavitational erosion
05/10/2001US20010000866 Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
05/10/2001US20010000865 Wafer produced by method of quality control for chemical vapor deposition
05/10/2001DE19951991A1 Process for charging a substrate wafer onto a heated susceptor or a susceptor segment of a deposition reactor with comprises holding the wafer and susceptor or susceptor segment away from each other before contacting them
05/10/2001DE19950565A1 Schichterzeugungsverfahren bei der Herstellung eines Halbleiterbauelements und Halbleiterbauelement Layer forming process in the manufacture of a semiconductor device and semiconductor device
05/10/2001DE10055450A1 Capacitor for semiconductor memory such as DRAM has silicon nitride film formed between lower electrode and tantalum oxide film on which upper electrode is formed
05/10/2001DE10046021A1 Capacitor production on a substrate by forming a lower electrode on the substrate, forming a dielectric layer on the electrode, oxygen radical or plasma heat treating the dielectric layer and forming the upper electrode
05/10/2001DE10042881A1 CVD apparatus comprises a reaction chamber, a material gas introduction path, an inert gas introduction path, an introduction path for a gas having a high heat conductivity, a moisture measuring device and a vacuum pump
05/10/2001CA2387341A1 Method and apparatus for supercritical processing of multiple workpieces
05/09/2001EP1098354A2 Apparatus for controlling temperature in a semiconductor processing system
05/09/2001EP1098015A1 Evaporator for a CVD apparatus
05/09/2001EP1097778A2 Method for manufacturing objects of metallic material and objects manufactured with this method
05/09/2001EP1097473A1 Plasma process to deposit silicon nitride with high film quality and low hydrogen content
05/09/2001EP1097472A1 Vapor deposition routes to nanoporous silica
05/09/2001EP1097470A1 Infra-red transparent thermal reactor cover member
05/09/2001EP1097469A1 Method and apparatus for reducing contamination of a substrate in a substrate processing system
05/09/2001EP1097468A1 Method and apparatus for processing wafers
05/09/2001EP1097253A1 Ion energy attenuation
05/09/2001EP1097252A1 Multi-position load lock chamber
05/09/2001EP1097251A1 System and method for reducing particles in epitaxial reactors
05/09/2001EP1097111A1 Heating a substrate support in a substrate handling chamber
05/09/2001EP0811082B1 Cvd diamond burrs for odontological and related uses
05/09/2001EP0802988B1 Method of forming diamond-like carbon film (dlc)
05/09/2001CN1294542A Diamond cutting tool
05/09/2001CN1294481A Microwave plasma processor and method thereof
05/09/2001CN1065573C Guide bush and method of forming hard carbon film over inner surface of guide bush
05/08/2001US6229118 Wafer handling apparatus for transferring a wafer to and from a process chamber
05/08/2001US6228781 Sequential in-situ heating and deposition of halogen-doped silicon oxide
05/08/2001US6228702 Method of manufacturing semiconductor device
05/08/2001US6228510 Coating and method for minimizing consumption of base material during high temperature service
05/08/2001US6228502 Material having titanium dioxide crystalline orientation film and method for producing the same
05/08/2001US6228471 Coating comprising layers of diamond like carbon and diamond like nanocomposite compositions
05/08/2001US6228439 Multistage; concurrent cleaning substrate, depositing
05/08/2001US6228434 Plasma polymerized polymer films, enhanced chemical vapordeposition with a flash evaporated feed source of a low vapor pressure compound.
05/08/2001US6228420 Method to maintain consistent thickness of thin film deposited by chemical vapor deposition
05/08/2001US6228297 Method for producing free-standing silicon carbide articles
05/08/2001US6228175 Apparatus for generating a wet oxygen stream for a semiconductor processing furnace
05/08/2001US6228174 Heat treatment system using ring-shaped radiation heater elements
05/08/2001US6228173 Single-substrate-heat-treating apparatus for semiconductor process system
05/08/2001US6228170 Method and apparatus for regulating chamber pressure
05/08/2001US6228166 Method for boron contamination reduction in IC fabrication
05/08/2001US6227141 RF powered plasma enhanced chemical vapor deposition reactor and methods
05/08/2001US6227140 Semiconductor processing equipment having radiant heated ceramic liner
05/08/2001CA2073642C Substoichiometric zirconium nitride coating
05/07/2001WO2001048790A1 Baffle plate, apparatus for producing the same, method of producing the same, and gas processing apparatus containing baffle plate