Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
05/2001
05/31/2001WO2001038601A1 Precursor deposition using ultrasonic nebulizer
05/31/2001WO2001038600A1 Articles coated with aluminum nitride by chemical vapor deposition
05/31/2001WO2001038596A2 Plasma coating metals at atmospheric pressure
05/31/2001WO2001038255A1 Method for making a bowl in thermostructural composite material in particular for a monocrystalline silicon producing installation
05/31/2001WO2001037985A1 In-situ air oxidation treatment of mocvd process effluent
05/31/2001WO2000003421A3 Improved endpoint detection for substrate fabrication processes
05/31/2001US20010002338 Method of preventing generation of particles in chamber
05/31/2001US20010002326 To form a barrier layer having uniform composition along a depth of a contact hole or via of an integrated circuit
05/31/2001US20010002285 Streams of active particles are created, these being directed onto the surface which is to be treated, and caused to interact with the surface
05/31/2001US20010002284 Providing vaporized organic component from one source, wherein vaporized organic material is capable of condensing in vacuum, providing plasma from other source, causing vaporized organic material to condense and polymerize on surface
05/31/2001US20010002280 Depositing a monolayer of metal on the substrate surface by flowing a molecular precursor gas or vapor bearing the metal over a surface, flowing at least one radical species into the chamber and over the surface
05/31/2001US20010002279 Reacting organic precursors in vapor phase
05/31/2001US20010002278 Heating the substrate to a deposition temperature by a cureent flow through heater filaments, discontinuing current flow to the heater filament, initiating deopositon of material layer subsequent to discontinuing current flow
05/31/2001US20010001954 Forming a titanium/titanium nitride film on a semiconductor substrate surface by vapor deposition where the substrate support has a protective silicon nitride coating to prevent contamination the support material; no current leakage
05/31/2001US20010001953 Support apparatus for semiconductor wafer processing
05/31/2001US20010001952 Opening and closing of valve means according to a preset open-close time chart and a preset number of cycles; heating; evacuation, continuing evaluation; single crystals; accuracy
05/31/2001US20010001950 Sharing vacuum pumps by evacuating the main chamber and auxilary chambers by pumps arranged in series; connected and sharing a drive motor; etching and vapor deposition of semiconductor wafers; efficiency
05/31/2001US20010001949 Coating a film on a wafer by dissolving a nonvolatile intermediate in an inorganic solvent, transporting the solution in a liquid state; evaporating; reacting the novolatile vapor with a reactant vapor; less by-products
05/31/2001DE10055636A1 Transparent conducting film having a specified thickness used in production of electrodes for controlling liquid crystals in display elements for computers comprises indium-tin oxide containing nitrogen and formed on substrate
05/31/2001DE10032213A1 Kondensator für Halbleiterspeicherbauelement und Verfahren zu dessen Herstellung Capacitor for the semiconductor memory device and method for its production
05/30/2001EP1104012A1 Method and apparatus for forming an oxide layer on semiconductor wafers
05/30/2001EP1103635A2 Coated cutting insert for milling and turning applications
05/30/2001EP1103632A1 Apparatus and method for processing semiconductor substrates
05/30/2001EP1103069A1 Misted precursor deposition apparatus and method with improved mist and mist flow
05/30/2001EP1103068A1 Improved gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
05/30/2001EP1102947A1 Chemical delivery system having purge system utilizing multiple purge techniques
05/30/2001EP1102872A1 Novel organocuprous precursors for chemical vapor deposition of a copper film
05/30/2001EP1102871A1 Chemical vapor deposition vaporizer
05/30/2001EP1102870A1 Gas distributor plate for a processing apparatus
05/30/2001EP1102869A1 Esrf chamber cooling system and process
05/30/2001EP1102616A1 Esrf coolant degassing process
05/30/2001EP0925383B1 Process for coating substrates with a silicium-containing protective layer by chemical vapour deposition
05/30/2001EP0689619B1 Apparatus and method for delivering reagents in vapor form to a cvd reactor
05/30/2001CN1297491A Reduced impedance chamber
05/30/2001CN1297218A Field-emission display device using vertically arranged nanometer carbon tubes and its mfg. method
05/30/2001CN1297064A Monitor method and equipment of precursor for chemical gas-phase deposition and osmosis process
05/30/2001CN1066369C Alumina-coated cutting tool
05/29/2001US6240335 Distributed control system architecture and method for a material transport system
05/29/2001US6239553 RF plasma source for material processing
05/29/2001US6239543 Electron beam plasma formation for surface chemistry
05/29/2001US6239045 Semiconductor producing apparatus and producing method for epitaxial wafer using same
05/29/2001US6239043 Method for modulating uniformity of deposited layer thickness
05/29/2001US6239018 Method for forming dielectric layers
05/29/2001US6238751 Semiconductor substrate
05/29/2001US6238739 Vapor deposition; process control
05/29/2001US6238738 Thermal decomposition of titanium tetrachloride and oxyester
05/29/2001US6238737 Method for protecting refractory metal thin film requiring high temperature processing in an oxidizing atmosphere and structure formed thereby
05/29/2001US6238734 Liquid precursor mixtures for deposition of multicomponent metal containing materials
05/29/2001US6238588 High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
05/29/2001US6238587 Method for treating articles with a plasma jet
05/29/2001US6238514 Apparatus and method for removing condensable aluminum vapor from aluminum etch effluent
05/29/2001US6238512 Plasma generation apparatus
05/29/2001US6238488 Method of cleaning film forming apparatus, cleaning system for carrying out the same and film forming system
05/29/2001US6238471 Flake particles coated with cobalt oxide-containing layer, colorless transparent metal oxide layer having first refractive index and outer layer of colorless transparent metal oxide having higher refractive index
05/29/2001US6237528 Showerhead electrode assembly for plasma processing
05/29/2001US6237526 Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
05/29/2001CA2090109C Abrasion wear resistant coated substrate product
05/25/2001WO2001037321A2 Semiconductor devices with selectively doped iii-v nitride layers
05/25/2001WO2001037315A1 Plasma processing systems and method therefor
05/25/2001WO2001037314A1 Materials and gas chemistries for processing systems
05/25/2001WO2001037313A1 Plasma processing apparatus with an electrically conductive wall
05/25/2001WO2001037311A2 Method and apparatus for controlling the volume of a plasma
05/25/2001WO2001036711A1 Adherent hard coatings for dental burs and other applications
05/25/2001WO2001036708A1 A method for depositing layers on a substrate
05/25/2001WO2001036707A1 Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a cvd chamber
05/25/2001WO2001036706A1 Exhaust system for vapor deposition reactor
05/25/2001WO2001036705A1 Liquid delivery mocvd of sbt
05/25/2001WO2001036703A1 System and method for depositing inorganic/organic dielectric films
05/25/2001WO2001036702A1 Method of vaporizing liquid sources and apparatus therefor
05/25/2001WO2001002622A3 Method of coating ceramics using ccvd
05/24/2001US20010001679 For a field emitter device, by treating a substrate such as with acid or base to modify a morphology of the substrate to create nucleation sites and growing a carbon film
05/24/2001US20010001385 Boron-doped isotopic diamond and process for producing the same
05/24/2001US20010001384 Silicon epitaxial wafer and production method therefor
05/23/2001EP1102521A2 Plasma injector
05/23/2001EP1102305A1 Plasma processing apparatus with an electrically conductive wall
05/23/2001EP1102299A1 Field emission display device using vertically-aligned carbon nanotubes and manufacturing method thereof
05/23/2001EP1102298A1 Field emission display device using vertically-aligned carbon nanotubes and manufacturing method thereof
05/23/2001EP1100980A2 Processing system and method for chemical vapor deposition
05/23/2001EP1100979A1 Coated grooving or parting insert
05/23/2001EP1100978A1 Method and apparatus for forming amorphous and polycrystalline silicon germanium alloy films
05/23/2001EP0931178B1 Composite body, production process and use
05/23/2001EP0865514B1 Process for the preparation of aluminum oxide film using dialkylaluminum alkoxide
05/23/2001DE19955880A1 Metal coating process, e.g. for steel parts used in vehicles, involves forming a coupling layer by plasma coating in inert gas and-or oxidizing gas containing organo-silicon compound and then applying organic coating
05/23/2001CN1296127A Collector
05/23/2001CN1295987A Compositions for coating glass and the coated glass
05/23/2001CN1295875A Detergent and washing method for harmful gas
05/22/2001US6236559 Capacitor
05/22/2001US6236113 Iridium composite barrier structure and method for same
05/22/2001US6236023 Cleaning process for rapid thermal processing system
05/22/2001US6235675 Methods of forming materials containing carbon and boron, methods of forming catalysts, filaments comprising boron and carbon, and catalysts
05/22/2001US6235654 Process for forming PECVD nitride with a very low deposition rate
05/22/2001US6235652 High rate silicon dioxide deposition at low pressures
05/22/2001US6235650 Passivation; protective coating
05/22/2001US6235649 Method of forming high dielectric constant thin film and method of manufacturing semiconductor device
05/22/2001US6235646 RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
05/22/2001US6235631 Vapor deposition; reacting dimethylaluminum hydride with tetrakis/dimethylamido/titanium
05/22/2001US6235416 Multilayer; zirconium carbonitride and zirconium oxide
05/22/2001US6235121 Vertical thermal treatment apparatus
05/22/2001US6235120 Coating for parts used in semiconductor processing chambers
05/22/2001US6235112 Apparatus and method for forming thin film