| Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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| 07/03/2001 | US6255230 Method for modifying a film forming surface of a substrate on which a film is to be formed, and method for manufacturing a semiconductor device using the same |
| 07/03/2001 | US6255222 Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process |
| 07/03/2001 | US6255216 Forming titanium silicide by chemical vapor deposition (cvd) on an exposed silicon base layer of the contact hole; forming a barrier layer on the titanium silicide; and forming a plug material on the barrier layer. |
| 07/03/2001 | US6255209 Methods of forming a contact having titanium formed by chemical vapor deposition |
| 07/03/2001 | US6255200 Polysilicon structure and process for improving CMOS device performance |
| 07/03/2001 | US6254983 Process for forming silicon oxide coating on plastic material |
| 07/03/2001 | US6254940 Forming nanoparticles; heating, flaming, applying perpendicular electric field; carbiding, alloying |
| 07/03/2001 | US6254933 Heating semiconductor to create convection between substrate and side walls; crystallizing thin film |
| 07/03/2001 | US6254925 Vapor deposition of nickel or alloy in nonoxidizing environment with iodide; bonding to porous sheet to form tile |
| 07/03/2001 | US6254792 Isotropic dry cleaning process for noble metal integrated circuit structures |
| 07/03/2001 | US6254746 Recessed coil for generating a plasma |
| 07/03/2001 | US6254687 Chemical vapor deposition system with reduced material deposition on chamber wall surfaces |
| 07/03/2001 | US6254686 Vented lower liner for heating exhaust gas from a single substrate reactor |
| 07/03/2001 | US6254685 Chemical vapor deposition trap with tapered inlet |
| 07/03/2001 | US6254683 Substrate temperature control method and device |
| 07/03/2001 | US6253703 Microwave chemical vapor deposition apparatus |
| 06/28/2001 | WO2001046999A2 Method and apparatus for supercritical processing of a workpiece |
| 06/28/2001 | WO2001046498A2 Chemical vapor deposition reactor and process chamber for said reactor |
| 06/28/2001 | WO2001046493A1 Polycrystalline diamond microstructures |
| 06/28/2001 | WO2001046492A1 Method and system for reducing damage to substrates during plasma processing with a resonator source |
| 06/28/2001 | WO2001046491A1 Film forming device |
| 06/28/2001 | WO2001046490A1 Method of cleaning and conditioning plasma reaction chamber |
| 06/28/2001 | WO2001046458A1 Deposited thin films and their use in detection, attachment, and bio-medical applications |
| 06/28/2001 | WO2001045864A1 Low temperature process for high density thin film integrated capacitors, and amorphously frustrated ferroelectric materials therefor |
| 06/28/2001 | WO2001045862A1 Plasma-deposited coatings, devices and methods |
| 06/28/2001 | WO2000055388A3 Method and apparatus for arc deposition |
| 06/28/2001 | WO1999065821A9 Free-standing and aligned carbon nanotubes and synthesis thereof |
| 06/28/2001 | US20010005629 Depositing barrier/wetting layer over surfaces of aperture, the barrier/wetting layer comprising tantalum, tantalum nitride, tungsten, tungsten nitride, and combinations thereof, depositing a conformal metal layer over the surface |
| 06/28/2001 | US20010005612 Next generation semiconductor memory devices of >256M grade by forming an amorphous tantalum oxynitride thin film over the lower electrode, heating in ammonia to form tantalum nitride (stoichiometric) with a film of high dielectric |
| 06/28/2001 | US20010005546 By plasma assisted chemical vapor deposition of an organosilicon compound and oxidizing gas using radio frequency power to generate reactive oxygen atoms; controlled carbon content; improved dual damascene process |
| 06/28/2001 | US20010004881 For delivering gases to a substrate or wafer for processing of said substrate or wafer; vapor deposition |
| 06/28/2001 | US20010004880 Pedestal with a thermally controlled platen |
| 06/28/2001 | US20010004879 Integrated temperature controlled exhaust and cold trap assembly |
| 06/28/2001 | DE19963122A1 Plasma chemical vapor deposition assembly has a cylindrical structure with a waveguide system to couple the microwave energy with a gas feed to coat the interior of plastics containers of all shapes and sizes without modification |
| 06/28/2001 | DE19962306A1 Liquid crystal orientation layer production on substrate comprises depositing layer consisting of hydrocarbon, especially monomeric hydrocarbon, from plasma of gas discharge |
| 06/28/2001 | DE10064654A1 Ruthenium layer, useful for the production of capacitors, has a high oxygen concentration towards the surface of the underlayer and a lower value in the direction of the outer coating surface . |
| 06/28/2001 | DE10064042A1 Copper wiring production comprises forming intermediate insulating layer on semiconductor layer, forming contact hole and trench, depositing copper and chemical-mechanical polishing |
| 06/28/2001 | DE10064041A1 Copper wiring production comprises forming intermediate insulating layer on semiconductor layer, forming contact hole and trench, depositing copper seed layer, plating with copper and chemical-mechanical polishing |
| 06/28/2001 | DE10032210A1 Kondensator für Halbleiterspeicherbauelement und Verfahren zu dessen Herstellung Capacitor for the semiconductor memory device and method for its production |
| 06/28/2001 | CA2394942A1 Deposited thin films and their use in detection, attachment, and bio-medical applications |
| 06/28/2001 | CA2387373A1 Method and apparatus for supercritical processing of a workpiece |
| 06/28/2001 | CA2329568A1 Apparatus for growing thin films |
| 06/28/2001 | CA2329566A1 Apparatus for growing thin films |
| 06/27/2001 | EP1111664A2 Process and apparatus for the deposition of dielectric layers |
| 06/27/2001 | EP1111661A2 High temperature electrostatic chuck |
| 06/27/2001 | EP1111660A2 Bell jar having integral gas distribution channeling |
| 06/27/2001 | EP1111356A2 Method and apparatus for processing semiconductor substrates |
| 06/27/2001 | EP1111087A1 Apparatus and method for forming thin film |
| 06/27/2001 | EP1111083A2 Process for makinga structured metal layer |
| 06/27/2001 | EP1110919A1 Method of manufacturing an optical fibre preform by chemical vapour deposition |
| 06/27/2001 | EP1110248A1 Method for depositing layers of high quality semiconductor material |
| 06/27/2001 | EP1109947A1 Hardcoats for flat panel display substrates |
| 06/27/2001 | CN2436514Y Ceramic film deposition device |
| 06/27/2001 | CN1300876A Double sintered diffuser |
| 06/27/2001 | CN1300875A Plasma treating apparatus |
| 06/27/2001 | CN1300726A Energy-saving efficient process of preparing composite carbon/carbon material by rapid deposition |
| 06/27/2001 | CN1300724A Method for preparing pre-formed articles with precisive distribution of refractive index by chemical gas phase deposition |
| 06/26/2001 | US6252295 Adhesion of silicon carbide films |
| 06/26/2001 | US6251807 Method for improving thickness uniformity of deposited ozone-teos silicate glass layers |
| 06/26/2001 | US6251800 Ultrathin deposited gate dielectric formation using low-power, low-pressure PECVD for improved semiconductor device performance |
| 06/26/2001 | US6251795 Method for depositing high density plasma chemical vapor deposition oxide with improved topography |
| 06/26/2001 | US6251793 Particle controlling method for a plasma processing chamber |
| 06/26/2001 | US6251792 Plasma etch processes |
| 06/26/2001 | US6251759 Method and apparatus for depositing material upon a semiconductor wafer using a transition chamber of a multiple chamber semiconductor wafer processing system |
| 06/26/2001 | US6251758 Construction of a film on a semiconductor wafer |
| 06/26/2001 | US6251508 Grade for cast iron |
| 06/26/2001 | US6251504 Ceramic heat barrier coating having low thermal conductivity, and process for the deposition of said coating |
| 06/26/2001 | US6251337 Apparatus and method for treating a particulate material within a rotating retort |
| 06/26/2001 | US6251192 Vacuum exhaust system |
| 06/26/2001 | US6251191 Processing apparatus and processing system |
| 06/26/2001 | US6251190 Gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride |
| 06/26/2001 | US6251189 Substrate processing apparatus and substrate processing method |
| 06/26/2001 | US6251188 Apparatus for forming laminated thin films or layers |
| 06/26/2001 | US6251187 Gas distribution in deposition chambers |
| 06/26/2001 | US6250914 Wafer heating device and method of controlling the same |
| 06/26/2001 | US6250251 Vacuum processing apparatus and vacuum processing method |
| 06/21/2001 | WO2001045158A1 Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
| 06/21/2001 | WO2001045149A1 Method of forming copper interconnections and thin films using chemical vapor deposition with catalyst |
| 06/21/2001 | WO2001045135A2 Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates |
| 06/21/2001 | WO2001045134A2 Method and apparatus for producing uniform process rates |
| 06/21/2001 | WO2001044539A1 Coating method |
| 06/21/2001 | WO2001044538A1 Device for producing a gas mixture |
| 06/21/2001 | WO2001044537A1 Chuck heater for improved planar deposition process |
| 06/21/2001 | WO2001044138A1 Ceramic compositions, physical vapor deposition targets and methods of forming ceramic compositions |
| 06/21/2001 | WO2001024220A3 Uniform gas distribution in large area plasma treatment device |
| 06/21/2001 | US20010004533 Preparing a semiconductor substrate, forming a first electrode on the substrate, depositing a ferroelectric barium strontium titinate on lower electrode, high temperature treatment for crystallization of the oxide, removal of carbon |
| 06/21/2001 | US20010004479 Reacting silicon compound(s) that contain carbon e.g., methyl-or dimethylsilane, with an oxidizing gas, e.g. nitrous oxide, at a constant radio frequency power at a low level; adhesion of silicon oxide; etch stop; damascene films |
| 06/21/2001 | US20010004478 Plasma treatment of titanium nitride formed by chemical vapor deposition |
| 06/21/2001 | US20010004470 Precursor composition for vapor deposition of metal containing film on substrate, composition includes solvents comprising alkanes having dissolved therein compatible metal organic beta diketonate compounds, alkoxide ligands |
| 06/21/2001 | US20010004140 Furnace of apparatus for manufacturing a semiconductor device having a heat blocker for preventing heat loss during the unloading of wafers |
| 06/21/2001 | US20010003892 Exhaust gas filtration device, auxiliary filtration device and trap device |
| 06/21/2001 | DE19960333A1 Vorrichtung zum Herstellen eines Gasgemisches An apparatus for producing a gas mixture |
| 06/21/2001 | DE19959711A1 Verfahren zur Herstellung einer strukturierten Metallschicht A method for producing a structured metal layer |
| 06/21/2001 | DE19958474A1 Verfahren zur Erzeugung von Funktionsschichten mit einer Plasmastrahlquelle A process for the production of function layers with a plasma beam source |
| 06/20/2001 | EP1109210A1 Ozone treatment device of semiconductor process system |
| 06/20/2001 | EP1109203A2 Dual substrate loadlock process equipment |
| 06/20/2001 | EP1109201A2 Serial wafer handling mechanism |
| 06/20/2001 | EP1108801A1 High temperature filter |
| 06/20/2001 | EP1108468A1 Thin film deposition apparatus |
| 06/20/2001 | EP1108267A1 Capacitors comprising roughened platinum layers, methods of forming roughened layers of platinum and methods of forming capacitors |