Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
07/2001
07/27/2001CA2304548A1 Free floating shield and semiconductor processing system
07/26/2001WO2001054164A1 Impedance adapted microwave energy coupling device
07/26/2001WO2001053565A1 Process for preparing metal nitride thin film employing amine-adduct single-source precursor
07/26/2001WO2001053304A1 Novel aminosilyl borylalkanes, their production and use
07/26/2001WO2001052963A1 Apparatus and method for removing condensable aluminum vapor from aluminum etch effluent
07/26/2001US20010009812 Process to improve adhesion of cap layers in integrated circuits
07/26/2001US20010009695 Process for growing metalloid thin films
07/26/2001US20010009693 Supplying a first reactive gas ammonia or hydrogen onto the substrates, etching the transition metal or alloy layer into fine grains which acts as catalyst, supplying second reactive carbonized gas for forming carbon nanotubes, and heating
07/26/2001US20010009274 Volatile copper precursor compound comprising a complex of copper with hexafluoroacetylacetonate and a phenylethylene ligand such as alpha-methylsytrene; for chemical vapor deposition of copper with high deposition rates
07/26/2001US20010009255 System and method for rapid thermal processing
07/26/2001US20010009220 Forming plasma in space facing substrate surface; imposing pulse voltage of lower frequency than the oscillation frequency of plasma ions on substrate causing thin film to be produced on substrate
07/26/2001US20010009154 Oxidation of surface with an oxygen plasma controlled by oxygen atmosphere, temperature, and radio frequency power levels, and removing the product as a vapor with hydrolyzed hexafluoroacetylacetonate; wafer chuck is not disassembled
07/26/2001US20010009141 Susceptor designs for silicon carbide thin films
07/26/2001US20010009140 Apparatus for fabrication of thin films
07/26/2001US20010009138 Used in chemical vapor deposition tools for making semiconductors
07/26/2001DE10101766A1 Semiconductor element with a double damascene structure is formed in a dielectric layer structure comprising an upper layer with a first formation, an etch stop layer, and a lower layer with a second formation
07/26/2001DE10002876A1 New aminosilylborylalkanes are useful as CVD-applied coatings for protecting metal, carbon or ceramic substrates against oxidation at high temperatures
07/26/2001DE10001936A1 Microwave internal plasma-coating apparatus for bottles, has microwave coupling system at one end, opposite coaxial waveguide including gas supply tube
07/26/2001DE10001889A1 Process for coating the inside of a weapon shaft comprises applying a layer of carbon similar to diamond in a partial region of the shaft
07/25/2001EP1119035A2 Method for depositing a low dielectric constant film
07/25/2001EP1119034A1 Method of plasma-assisted film deposition
07/25/2001EP1119033A1 Plasma processing method
07/25/2001EP1119030A1 Plasma reactor
07/25/2001EP1119024A2 Substrate processing chambers and methods of operation thereof
07/25/2001EP1119016A2 Gas shower unit for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus
07/25/2001EP1118880A1 Method of organic film deposition
07/25/2001EP1118693A2 Suspended gas distribution manifold for plasma chamber
07/25/2001EP1118692A1 Remote plasma apparatus
07/25/2001EP1118691A1 Reactor with remote plasma system and method of processing a semiconductor substrate
07/25/2001EP1118688A1 Coated body with nanocrystalline CVD coating for enhanced edge toughness and reduced friction
07/25/2001EP1118109A1 Silicon carbide deposition method and use as a barrier layer and passivation layer
07/25/2001EP1118107A1 In situ deposition of low k si carbide barrier layer, etch stop, and anti-reflective coating for damascene applications
07/25/2001EP1118105A1 Method for cleaning a process chamber
07/25/2001EP1118102A1 Low-pressure apparatus and pressure control valve
07/25/2001EP1118025A2 Silicon carbide for use as a low dielectric constant anti-reflective coating and its deposition method
07/25/2001EP1117968A1 Method and apparatus for thermal processing of semiconductor substrates
07/25/2001EP1117854A1 Method and apparatus for forming polycrystalline and amorphous silicon films
07/25/2001EP1021589B1 Method of chemical vapor deposition of metal films
07/25/2001EP0920435A4 Platinum source compositions for chemical vapor deposition of platinum
07/25/2001EP0784715B1 Method of coating a cutting tool with "alpha"-al2o3
07/25/2001CN1305541A Injector for reactor
07/25/2001CN1305539A Sieve like structure for fluid flow through structural arrangement
07/24/2001USRE37294 Ion beam process for deposition of highly abrasion-resistant coatings
07/24/2001US6265311 High quality conformal tantalum nitride films from tantalum pentahalide precursors and nitrogen
07/24/2001US6265086 Electroless metal deposition on silyl hydride functional resin
07/24/2001US6265077 Conductive surface layer containing metal, carbon, and silicon; noncracking; peeling prevention
07/24/2001US6265070 Hard carbide protective coating over ceramic surface
07/24/2001US6265068 Hydrogenation; transparent layer; durability; luminescence
07/24/2001US6265026 Flowing carrier gas; vaporization
07/24/2001US6264852 Substrate process chamber and processing method
07/24/2001US6264788 Plasma treatment method and apparatus
07/24/2001US6264751 Mechanism for performing water repellency processing on both sides simultaneously
07/24/2001US6264749 Process and apparatus for making composite films
07/24/2001US6264748 Substrate processing apparatus
07/24/2001US6264706 Used foor manufacturing semiconductor device or liquid crystal display device
07/24/2001US6264467 Micro grooved support surface for reducing substrate wear and slip formation
07/24/2001US6264246 Purge system and purge joint
07/24/2001US6264209 Guide bush and method of forming diamond-like carbon film over the guide bush
07/24/2001US6264064 Chemical delivery system with ultrasonic fluid sensors
07/24/2001US6263831 Downstream plasma using oxygen gas mixtures
07/24/2001US6263830 Microwave choke for remote plasma generator
07/24/2001US6263829 Process chamber having improved gas distributor and method of manufacture
07/24/2001US6263590 Method and apparatus for controlling byproduct induced defect density
07/24/2001US6263587 Degassing method using simultaneous dry gas flux pressure and vacuum
07/24/2001CA2235807C Anchored oxide coatings on hard metal cutting tools
07/24/2001CA2106734C Apparatus for supplying cvd coating devices
07/19/2001WO2001052310A1 Method of performing plasma warm-up on semiconductor wafers
07/19/2001WO2001052309A1 Method of surface preparation
07/19/2001WO2001052302A1 Segmented electrode assembly and method for plasma processing
07/19/2001WO2001051680A1 Vacuum processing apparatus
07/19/2001WO2001024581A8 Multi-zone resistance heater
07/19/2001US20010008798 Plasma treatment system and method
07/19/2001US20010008797 Introducing only one of a high melting metal composition gas and a reducing gas for a short time as a pre-process just before the film forming process to improve repeatability of a thickness and uniformity of thickness of the film
07/19/2001US20010008782 Method and apparatus for manufacturing semiconductor device
07/19/2001US20010008708 Ceramic heat barrier coating having low thermal conductivity, and process for the deposition of said coating
07/19/2001US20010008622 Vapor deposition at high temperature, high pressure
07/19/2001US20010008618 Removal semiconductor by-products
07/19/2001US20010008172 Semiconductor workpiece processing apparatus and method
07/19/2001US20010008138 Removal deposits in vapor deposition enclosures
07/19/2001US20010008122 Plasma processing apparatus
07/19/2001US20010008111 Method of depositing films by using carboxylate complexes
07/19/2001DE10064067A1 Verfahren zur Herstellung von Halbleitereinrichtungskondensatoren A process for producing semiconductor device capacitors
07/19/2001DE10057605A1 Production of high-performance coatings, e.g., on tools and machine parts comprises electrophoretic deposition followed by chemical vapor infiltration/deposition
07/19/2001DE10001620A1 Process used for coating a blade of a gas turbine comprises exciting the base material during coating in an ultrasound frequency range using a transmitting head connected to a vibrator
07/18/2001EP1116261A1 Method and apparatus for cooling substrates
07/18/2001EP1116225A1 Hard disk vapor lube
07/18/2001EP1115905A1 Composite material coating and a method for the production thereof
07/18/2001EP1115904A1 Raw materials or blanks having super hydrophobic coating
07/18/2001EP1115903A1 Super hydrophobic coated substrates
07/18/2001EP1115902A1 Articles with hard surfaces having super hydrophobic coating
07/18/2001EP1115901A1 Method for applying a coating to a substrate
07/18/2001EP1115900A1 Methods for preparing ruthenium metal films
07/18/2001EP0948660B1 An article having a superalloy substrate and an enrichment layer placed thereon, and methods of its manufacturing
07/18/2001CN1304549A Method for single chamber processing of PECVD-Ti and CVD-Ti films in IC mfg.
07/17/2001US6262523 Large area atmospheric-pressure plasma jet
07/17/2001US6262397 Heat treatment apparatus and heat treatment method
07/17/2001US6262393 Epitaxial growth furnace
07/17/2001US6261975 Method for depositing and planarizing fluorinated BPSG films
07/17/2001US6261974 Growth method of a polymer film
07/17/2001US6261693 Highly tetrahedral amorphous carbon coating on glass