Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
08/2001
08/28/2001US6279503 Chemical vapor deposition apparatus for manufacturing semiconductor devices
08/28/2001US6279402 Device for measuring pressure in a chamber
08/25/2001CA2331278A1 Process for controlled growth of carbon nanotubes
08/23/2001WO2001061737A1 Electron beam modification of cvd deposited films, forming low dielectric constant materials
08/23/2001WO2001061736A1 Method of processing wafer
08/23/2001WO2001061726A1 Method and apparatus for inductively coupled plasma treatment
08/23/2001WO2001061071A2 Condensation coating method
08/23/2001WO2001061070A1 Method and apparatus for chemical vapor deposition of polysilicon
08/23/2001WO2001061069A2 Plasma polymerized primers for metal pretreatment
08/23/2001WO2001061068A2 Tumble coater
08/23/2001US20010016674 Method and apparatus for cleaning a vacuum line in a CVD system
08/23/2001US20010016429 Deposition of tungsten nitride by plasma enhanced chemical vapor deposition
08/23/2001US20010016364 Film processing system
08/23/2001US20010016273 Hard wear resistant substrate, vapor deposition coating bonded to substrate, coating comprised of a first system of at least two different substances deposited in 50 individual layers; hardness, wear resistance; cutting tools
08/23/2001US20010015605 Carbon film, field emission cathode comprising the carbon film, and method of manufacturing the carbon film
08/23/2001US20010015344 Staggered in-situ deposition and etching of a dielectric layer for HDP-CVD
08/23/2001US20010015262 Apparatus and method for plasma treatment
08/23/2001US20010015168 Optimized silicon wafer gettering for advanced semiconductor devices
08/23/2001US20010015133 Cooling mechanism trap separates the gases, stores them in a temporary storage mechanism until it reaches a concentration at which an efficient recovery is possible and packs them in a cylinder
08/23/2001DE10106940A1 Beschichtetes Werkzeug mit einer Gleitbeschichtung und Verfahren zu seiner Herstellung Coated tool with a sliding coating and process for its preparation
08/23/2001DE10007059A1 Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung Method and apparatus for the production of coated substrates by means of condensation coating
08/23/2001CA2386382A1 Method and apparatus for chemical vapor deposition of polysilicon
08/22/2001EP1126511A1 Plasma film forming method
08/22/2001EP1126504A1 Method and apparatus for inductively coupled plasma treatment
08/22/2001EP1126046A2 Chemical vapor deposition of barriers from novel precursors
08/22/2001EP1125324A1 Radical-assisted sequential cvd
08/22/2001EP1125321A1 Chemical deposition reactor and method of forming a thin film using the same
08/22/2001EP1125319A2 Semiconductor processing chamber calibration tool
08/22/2001EP1125003A1 Excess cvd reactant control
08/22/2001EP1124729A1 Plastic container having a carbon-treated internal surface
08/22/2001EP1124622A1 Method for reducing the amount of perfluorocompound gas contained in exhaust emissions from plasma processing
08/22/2001CN1309776A Method of organic film deposition
08/22/2001CN1309418A Method and device for forming film on substrate
08/22/2001CN1309192A Metal compound solution and method for preparing film using same
08/22/2001CN1309191A Deposition process for preparing anti-reflecting film of InSb infrared focus plane array device and its special mask frame
08/22/2001CN1069933C Method and apparatus for forming deposited film
08/22/2001CN1069932C Metal organic chemical vapour phase deposition process for prepairng metal and alloy film
08/21/2001US6277657 Apparatus for fabricating semiconductor device and fabrication method therefor
08/21/2001US6277496 Reflective metal layer and ceramic surface
08/21/2001US6277480 Coated article including a DLC inclusive layer(s) and a layer(s) deposited using siloxane gas, and corresponding method
08/21/2001US6277436 Dielectric metal titanate film has a dielectric constant k>40 and a second order voltage coefficient a.sub.2 <100 ppm/v2, and said metal titanate film contains at least 60 atom % titanium
08/21/2001US6277347 Use of ozone in process effluent abatement
08/21/2001US6277254 A backing plate with a ferroelectric ceramic composition of lead, zirconium, titanium and bismuth joined to it; high desity; nanostructure; low temperature sintering
08/21/2001US6277251 Adjusting the density of plasma contained in a chamber where semiconductor wafers are processed, and etching or depositing a metal layer on a substrate
08/21/2001US6277235 In situ plasma clean gas injection
08/21/2001US6277201 CVD apparatus for forming thin films using liquid reaction material
08/21/2001US6277200 For using bistertiarybutylaminesilane as a silicon source to react with an oxidizing agent to form a dielectric film on a substrate that includes silicon
08/21/2001US6277198 Use of tapered shadow clamp ring to provide improved physical vapor deposition system
08/21/2001US6277194 Method for in-situ cleaning of surfaces in a substrate processing chamber
08/21/2001US6276296 Hollow containers with inert or impermeable inner surface through plasma-assisted surface reaction or on-surface polymerization
08/21/2001CA2198588C Formation of a metalorganic compound for growing epitaxial semiconductor layers
08/16/2001WO2001059186A1 Processing line having means to monitor crystallographic orientation
08/16/2001WO2001059177A1 Exhaust pipe with reactive by-product adhesion preventing means and method of preventing the adhesion
08/16/2001WO2001059176A1 Gas supply device for precursors with a low vapor pressure
08/16/2001WO2001059175A1 Method for producing a conductive doped diamond-like nanocomposite film and conductive doped diamond-like nanocomposite film
08/16/2001WO2001059172A1 Diamond-like carbon film with enhanced adhesion
08/16/2001US20010014544 Semiconductor producing apparatus and producing method for epitaxial wafer using same
08/16/2001US20010014521 Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride
08/16/2001US20010014520 Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units
08/16/2001US20010014510 Forming electrode, forming dielectric thin film by depositing amorphous tantalum oxynitride film on surface of lower electrode, supplying tantalum source gas, supplying reaction gas, forming upper electrode on upper portion of dielectric
08/16/2001US20010014398 Diamond-like protective coatings
08/16/2001US20010014397 Method for producing a wafer support, used, in particular, in a high-temperature CVD reactor or in a high-temperature CVD process which involves the use of aggressive gases
08/16/2001US20010014371 Apparatus for growing thin films
08/16/2001US20010014111 Method for measuring radiation temperature, equipment for measuring radiation temperature and equipment for manufacturing semiconductor device
08/16/2001US20010014003 Integrated power modules for plasma processing systems
08/16/2001US20010013504 Plasma treatment method and apparatus
08/16/2001US20010013371 Gas panel
08/16/2001US20010013363 Apparatus and method for feeding gases for use in semiconductor manufacturing
08/16/2001US20010013312 Apparatus for growing thin films
08/16/2001EP1124257A2 Phosphorous doped copper film
08/16/2001EP1124255A2 Etching process in the fabrication of electronic devices
08/16/2001EP1124252A2 Apparatus and process for processing substrates
08/16/2001EP1123992A2 Semiconductor processing apparatus and method
08/16/2001EP1123991A2 Low dielectric constant materials and processes
08/16/2001EP1123988A1 Method of forming chromium coated copper for printed circuit boards
08/16/2001EP1123639A2 Wafer level burn-in and test thermal chuck and method
08/16/2001EP1123560A2 Method for producing a wafer support in a high-temperature cvd reactor
08/16/2001EP1123423A1 High rate silicon deposition method at low pressures
08/16/2001CA2399477A1 Gas supply device for precursors with a low vapor pressure
08/15/2001CN1308371A Method of forming copper wiring in semiconductor device
08/15/2001CN1308370A Method of forming copper wiring in semiconductor device
08/15/2001CN1308147A Plasma Chemical vapor deposition filing method and equipment
08/14/2001US6274837 Method and apparatus for in-situ solid state doping of CVD diamonds and diamonds so made
08/14/2001US6274507 Plasma processing apparatus and method
08/14/2001US6274496 Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturing
08/14/2001US6274495 Method for fabricating a device on a substrate
08/14/2001US6274461 Method for depositing layers of high quality semiconductor material
08/14/2001US6274403 Process for producing heteropitaxial diamond layers on Si-substrates
08/14/2001US6274206 Method of coating a silicon or silicide substrate
08/14/2001US6274196 Apparatus and method for exchanging an atmosphere of spherical object
08/14/2001US6274195 Vaporizing zirconium or titanium complex together with organometallic precursors and bringing vapor into contact with heated substrate to deposit metal oxide film on substrate
08/14/2001US6274191 Precise regulation of pyrocarbon coating
08/14/2001US6274058 Remote plasma cleaning method for processing chambers
08/14/2001US6273961 Method for cleaning semiconductor processing equipment by reducing particles
08/14/2001US6273958 Substrate support for plasma processing
08/14/2001US6273957 Vaporizing device for CVD source materials and CVD apparatus employing the same
08/14/2001US6273955 Film forming apparatus
08/14/2001US6273954 System for manufacturing a semiconductor device
08/14/2001US6273951 Precursor mixtures for use in preparing layers on substrates
08/14/2001US6273023 Plasma processing apparatus capable of reliably, electrostatically attracting and holding and thus fixing semiconductor wafer