Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
09/2001
09/26/2001EP1135796A1 Process for forming a sion/teos interlevel dielectric with after-treatment of the cvd silicium oxynitride layer
09/26/2001EP1135792A1 Method for manufacturing carbon nanotubes as functional elements of mems devices
09/26/2001EP1135545A1 Removing oxides or other reducible contaminants from a substrate by plasma treatment
09/26/2001EP1135539A1 Diamond coated cutting tools and method of manufacture
09/26/2001EP1135335A1 Thin hafnium oxide film and method for depositing same
09/26/2001EP1135218A1 Superalloy component with abrasive grit-free coating
09/26/2001EP0902962B1 Apparatus for plasma jet treatment of substrates
09/26/2001EP0792951B1 Vacuum chamber made of aluminum or its alloys
09/26/2001EP0708983B1 Chemical vapor deposition process for fabricating layered superlattice materials
09/26/2001CN1071725C Densification of substrate arranged in ring-shaped stacks by chemical infiltration in vapour phase with temp. gradient
09/25/2001US6294484 Method of forming TEOS oxide films
09/25/2001US6294483 Method for preventing delamination of APCVD BPSG films
09/25/2001US6294468 Introducing silane initiation gases to form an amorphous, monolayer of silicon; introducing wf6 nucleation gases to form a silane reduced tungsten layer; hydrogen reducing gas flow to form a layer of hydrogen reduced bulk tungsten
09/25/2001US6294466 HDP-CVD apparatus and process for depositing titanium films for semiconductor devices
09/25/2001US6294241 Security document and method of producing it
09/25/2001US6294228 Silicon nitride film forming processes with lower temperature: unnecessary silicon nitride film is intentionally subjected to stress and cracked, whereby the unnecessary thin film is relieved from stress.
09/25/2001US6294227 Method of forming protective film on plastic part for vehicle-use and apparatus
09/25/2001US6294226 Method and apparatus for producing plastic container having carbon film coating
09/25/2001US6294219 Method of annealing large area glass substrates
09/25/2001US6294026 Distribution plate for a reaction chamber with multiple gas inlets and separate mass flow control loops
09/25/2001US6293310 Gas panel
09/25/2001US6293222 Remote-plasma-CVD method for coating or for treating large-surface substrates and apparatus for performing same
09/20/2001WO2001069644A1 Method and device for the plasma-activated surface treatment and use of the inventive method
09/20/2001WO2001069642A2 Plasma deposition method and system
09/20/2001WO2001069131A2 Chamber cleaning mechanism
09/20/2001WO2001068948A1 Pyrazolate copper complexes, and mocvd of copper using same
09/20/2001WO2001068941A1 Method and implementing device for a chemical reaction
09/20/2001WO2001068940A1 Methods for replication, replicated articles, and replication tools
09/20/2001WO2001068580A1 β-DIKETONATOCOPPER(I) COMPLEX CONTAINING ALLENE COMPOUND AS LIGAND AND PROCESS FOR PRODUCING THE SAME
09/20/2001WO2001068559A1 Adhesive composite coating for diamond and diamond-containing materials and method for producing said coating.
09/20/2001WO2001068271A1 Controlling surface chemistry on solid substrates
09/20/2001WO2001068224A1 Method and device for processing pfc
09/20/2001WO2000003421A8 Improved endpoint detection for substrate fabrication processes
09/20/2001US20010023377 Distributed control system architecture and method for a material transport system
09/20/2001US20010023234 Reactor for coating flat substrates and process for manufacturing such substrates
09/20/2001US20010023126 Spraying tetraethoxysilane and hydrogen peroxide
09/20/2001US20010022996 Deposited-film formation apparatus, and deposited-film formation process
09/20/2001US20010022991 Vacuum container; electrolytic cell
09/20/2001US20010022988 Device and method for protecting medical devices during a coating process
09/20/2001US20010022408 Method and apparatus for producing free-standing silicon carbide articles
09/20/2001US20010022295 Apparatus for fabricating semiconductor device and method for fabricating semiconductor using the same
09/20/2001US20010022215 Apparatus and method for improving uniformity in batch processing of semiconductor wafers
09/20/2001US20010022158 Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
09/20/2001US20010022148 Metal compound solution and thin film formation using the same
09/20/2001DE10064178A1 Verfahren und Vorrichtung zur Ausbildung einer Dünnschicht Method and apparatus for forming a thin film
09/20/2001CA2402150A1 Method and implementing device for a chemical reaction
09/19/2001EP1134802A2 Method of forming conducting diffusion barriers
09/19/2001EP1134794A1 Semiconductor thin film and thin film device
09/19/2001EP1134791A2 Shadow ring with common guide member
09/19/2001EP1134789A2 One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
09/19/2001EP1134304A2 Method of vertically aligning carbon nanotubes on substrates using thermal chemical vapor deposition with dc bias
09/19/2001EP1134073A1 Gas barrier film
09/19/2001EP1133788A1 Silane-based oxide anti-reflective coating for patterning of metal features in semiconductor manufacturing
09/19/2001EP1133652A2 Manifold system of removable components for distribution of fluids
09/19/2001EP1133582A1 Method for preparing titanium coatings
09/19/2001EP1133581A1 Method and device for plasma vapor chemical deposition of homogeneous films on large flat surfaces
09/19/2001EP1133499A1 Complex compound of an element of sub-group iv
09/19/2001EP1133453A1 Method and device for spraying of a material
09/19/2001EP1029103B1 Coating method and device
09/19/2001CN1313914A Carbon film and method for formation thereof and article covered with carbon film and method for preparation thereof
09/19/2001CN1313412A Process for generating epitaxial layer of III-family nitrode on monocrystal substrate and its products and equipment
09/19/2001CN1313255A Process for colouring surface layer of glass
09/18/2001US6291876 Electronic devices with composite atomic barrier film and process for making same
09/18/2001US6291793 Inductively coupled plasma reactor with symmetrical parallel multiple coils having a common RF terminal
09/18/2001US6291367 Method for depositing a selected thickness of an interlevel dielectric material to achieve optimum global planarity on a semiconductor wafer
09/18/2001US6291358 Plasma deposition tool operating method
09/18/2001US6291347 Method and system for constructing semiconductor devices
09/18/2001US6291346 Insulation of silicon substrate, contact holes and vapor deposition
09/18/2001US6291343 Plasma annealing of substrates to improve adhesion
09/18/2001US6291341 Method for PECVD deposition of selected material films
09/18/2001US6291340 Method of forming low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer
09/18/2001US6291029 Plasma processing method
09/18/2001US6291028 Forming plasma from inert gas introduced into processing chamber, bringing radio frequency energy used in plasma formation to full power, introducing remaining reactant gases to effect plasma deposition
09/18/2001US6291014 Chemical vapor codepositing aluminum, silicon and hafnium on substrate to form initial aluminide diffusion layer, depositing layer comprising platinum on aluminide layer, aluminizing layer after platinum deposition
09/18/2001US6290779 Processing substrate in chamber by depositingmetallic film by chemical vapor deposition using metal halide; introducing cleaning gas and oxidizer; heating and pressurization to produce volatile reaction product which is discharged
09/18/2001US6290774 Sequential hydride vapor phase epitaxy
09/18/2001US6290491 Method for heating a semiconductor wafer in a process chamber by a shower head, and process chamber
09/18/2001US6289843 Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface
09/18/2001US6289842 Plasma enhanced chemical vapor deposition system
09/13/2001WO2001067834A1 Flexible circuits with static discharge protection and process for manufacture
09/13/2001WO2001067087A2 Fluid handling devices with diamond-like films
09/13/2001WO2001066834A2 Chemical vapor deposition process for fabricating layered superlattice materials
09/13/2001WO2001066832A2 Graded thin films
09/13/2001WO2001066824A1 Plasma polymerization system and method for plasma polymerization
09/13/2001WO2001066823A1 Supplying and exhausting system in plasma polymerizing apparatus
09/13/2001WO2001066822A1 Method and device for coating substrates
09/13/2001WO2001066821A1 Method for substrate thermal management
09/13/2001WO2001066820A1 Diamond-like glass thin films
09/13/2001WO2001066819A2 Methods for preparing ruthenium metal films
09/13/2001WO2001066818A1 Machine for coating hollow bodies
09/13/2001WO2001066816A1 Liquid sources for cvd of group 6 metals and metal compounds
09/13/2001WO2001066484A1 Radiation-transmissive films on glass articles
09/13/2001WO2001066347A1 Composition and process for production of copper circuitry in microelectronic device structures
09/13/2001US20010021785 Indium source reagent compositions, and use thereof for deposition of indium-containing films on substrates and ion implantation of indium-doped shallow junction microelectronic structures
09/13/2001US20010021595 Sub-atmospheric pressure thermal chemical vapor deposition (SACVD) trench isolation method with attenuated surface sensitivity
09/13/2001US20010021593 Chemical vapor deposition apparatus and chemical vapor deposition process
09/13/2001US20010021592 High density plasma chemical vapor deposition apparatus and gap filling method using the same
09/13/2001US20010021591 From reactants ozone, and triethoxyfluorosilane for example, forming an insulating material comprising silicon, oxygen and fluorine, and optionally doping with boron or phosphorus; fluorine gives material with higher density
09/13/2001US20010021590 Directly vaporizing an organosilicon compound and then introducing it to the reaction chamber of the plasma chemical vapor deposition apparatus; residence time of source gas is lengthened by reducing total flow of reaction gas
09/13/2001US20010021446 Anti-reflection film and process for preparation thereof