Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
10/2001
10/25/2001WO2001079586A1 A process for the purification of organometallic compounds or heteroatomic organic compounds with a catalyst based on iron and manganese supported on zeolites
10/25/2001WO2001079585A1 Dlc layer system and method for producing said layer system
10/25/2001WO2001079584A1 Methods for chemical vapor deposition of titanium-silicon-nitrogen films
10/25/2001WO2001079578A1 Silicon reagents and low temperature cvd method of forming silicon-containing gate dielectric materials using same
10/25/2001WO2001078869A1 A process for the purification of organometallic compounds or heteroatomic organic compounds with a palladium-based catalyst
10/25/2001WO2001044538A9 Device for producing a gas mixture
10/25/2001US20010034140 Film forming method and semiconductor device
10/25/2001US20010034126 Copper alloy seed layer for copper metallization
10/25/2001US20010034123 Method of manufacturing a barrier metal layer using atomic layer deposition
10/25/2001US20010034097 Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same
10/25/2001US20010034004 Quartz window having reinforcing ribs
10/25/2001US20010033952 Method and apparatus for integrated-battery devices
10/25/2001US20010033936 Silicon carbide (SiC), a polycrystalline beta-SiC layer grown on the surface of an alpha-SiC sintered base material by thermal chemical vapor deposition is heat treated to convert it into the crystal structure of the base material; mirrors
10/25/2001US20010033899 Conducting within a fluidized bed of diamond particles by controlling the electrostatic potential to within a given range; film is useful as a diamond membrane of a lithographic mask
10/25/2001US20010033896 Deposited metal film on sintered product such as rare earth magnet for oxidation resistance comprising an upper and lower cage with large numbers of compartments, so that they open and close
10/25/2001US20010033893 Composition for preparing water-repellent coatings on optical substrates
10/25/2001US20010032781 Forming thin film
10/25/2001US20010032666 Integrated capacitor-like battery and associated method
10/25/2001US20010032591 Magnetic barrier for plasma in chamber exhaust
10/25/2001US20010032590 Magnetic barrier for plasma in chamber exhaust
10/25/2001US20010032589 Film forming apparatus and method of forming a crystalline silicon film
10/25/2001US20010032588 Semiconductor film deposition apparatus
10/25/2001US20010032543 Abatement of semiconductor processing gases
10/25/2001DE10018143A1 Layer system used for the wear protection, corrosion protection and for improving the sliding properties of machine parts consists of an adhesion layer, a transition layer and a covering layer arranged on a substrate
10/25/2001DE10018015A1 Arrangement for carrying out plasma-based process especially for ionised physical vapour deposition (IPVD) for metal deposition in microelectronics components manufacture
10/25/2001DE10010766A1 Verfahren und Vorrichtung zur Beschichtung von insbesondere gekrümmten Substraten Method and apparatus for coating in particular curved substrates
10/25/2001CA2406214A1 Deposited thin films and their use in separation and sarcrificial layer applications
10/25/2001CA2404195A1 A process for the purification of organometallic compounds or heteroatomic organic compounds with hydrogenated getter alloys
10/25/2001CA2404130A1 A process for the purification of organometallic compounds or heteroatomic organic compounds with a catalyst based on iron and manganese supported on zeolites
10/24/2001EP1148539A2 Method of depositing low K films using an oxidizing plasma
10/24/2001EP1148533A2 Method and apparatus for cleaning parts of a deposition system or etching wafers
10/24/2001EP1148152A2 Chemical vapor deposition apparatus
10/24/2001EP1148151A2 Ceramic heater device and film forming device using the same
10/24/2001EP1148150A2 Method and apparatus for processing semiconductor substrates with hydroxyl radicals
10/24/2001EP1147547A2 Inflatable slit and/or gate valve
10/24/2001EP1147242A1 Large area plasma source
10/24/2001EP1146958A1 Apparatus and method for point-of-use treatment of effluent gas streams
10/24/2001EP0950125B1 Method for making a diamond-coated member and product obtained thereby
10/24/2001CN1319247A Low contaminatino, high density plasma etch chamber and method for making the same
10/24/2001CN1319146A Method of passivating CVD chamber
10/24/2001CN1318862A Large workpiece plasma processor
10/24/2001CN1318443A Guide tube and method for forming hard carbon film on internal surface of tube
10/23/2001US6306776 Catalytic breakdown of reactant gases in chemical vapor deposition
10/23/2001US6306765 Method for the formation of thin films for use as a semiconductor device
10/23/2001US6306244 Apparatus for reducing polymer deposition on substrate support
10/23/2001US6306225 Mixing boron triflouride with hydrogen and optionally, argon, to generate reaction gas; converting hydrogen to atomic hydrogen by pulsed plasma discharge; contacting ferrous material surface with reaction gas to convert iron boride
10/23/2001US6306217 Used for preparation of semiconductor structures using chemical vapor deposition techniques and systems
10/23/2001US6306216 Apparatus for deposition of thin films on wafers through atomic layer epitaxial process
10/23/2001US6306211 Method for growing semiconductor film and method for fabricating semiconductor device
10/23/2001US6306183 Method of forming manufacturing semiconductor device
10/23/2001US6305392 Method and apparatus for removing processing liquid from a processing liquid delivery line
10/23/2001US6305390 Stabilization; inert gas flow; varying pressure
10/23/2001US6305315 ECR plasma apparatus
10/23/2001US6305314 Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
10/18/2001WO2001078123A1 Method of forming metal interconnects
10/18/2001WO2001078117A2 Gaseous process for surface preparation
10/18/2001WO2001078115A2 Barrier coating for vitreous materials
10/18/2001WO2001078105A1 Reaction chamber with at least one hf feedthrough
10/18/2001WO2001077421A1 Method for growing semiconductor crystalline materials containing nitrogen
10/18/2001WO2001077408A1 Substrate body coated with multiple layers and method for the production thereof
10/18/2001WO2001077407A1 In-situ generation of precursors for cvd
10/18/2001WO2001077406A2 A method of determining the end point of a plasma cleaning operation
10/18/2001WO2001076779A1 Liquid supply unit and purging method in the liquid supply unit
10/18/2001WO2001076768A1 Method and apparatus for temperature controlled vapor deposition on a substrate
10/18/2001WO2000049197A9 Wafer processing reactor having a gas flow control system and method
10/18/2001US20010031563 Semiconductor device and method of fabricating the same
10/18/2001US20010031542 Thin film forming method, thin film forming apparatus and solar cell
10/18/2001US20010031541 Hot wire chemical vapor deposition method and apparatus using graphite hot rods
10/18/2001US20010031539 Solutions of metal-comprising materials, and methods of making solutions of metal-comprising materials
10/18/2001US20010031527 Semiconductor memory device incorporating therein ruthenium electrode and method for the manufacture thereof
10/18/2001US20010031346 Diamond-like carbon hard multilayer film and component excellent in wear resistance and sliding performance
10/18/2001US20010031321 Film forming method in which flow rate is switched
10/18/2001US20010030876 Self-cleaning automotive head lamp
10/18/2001US20010030795 Hard carbon film and surface-acoustic-wave substrate
10/18/2001US20010030369 Methods and apparatus for forming a film on s substrate
10/18/2001US20010030291 Organic film vapor deposition method and a scintillator panel
10/18/2001US20010029896 Rotating device for plasma immersion supported treatment of substrates
10/18/2001US20010029895 Ceramic heater device and film forming device using the same
10/18/2001US20010029894 Reacting fibrous materials with chemical digesting solution in presence of organosilicon compounds selected from specified organopolysiloxane compounds or organosilane compounds to produce pulp
10/18/2001US20010029893 Deposited film forming apparatus and deposited film forming method
10/18/2001US20010029892 Vertical plasma enhanced process apparatus & method
10/18/2001US20010029891 Apparatus and method for forming ultra-thin film of semiconductor device
10/18/2001US20010029888 Method for improved chamber bake-out and cool-down
10/18/2001DE10016958A1 Verfahren zur Herstellung von Multilagenschichten auf Substratkörpern und Verbundwerkstoff, bestehend aus einem beschichteten Substratkörper A process for the production of multilayer coatings on substrate articles and composite material consisting of a coated substrate body
10/18/2001DE10015729A1 Production of an element made from polycrystalline diamond comprises molding a substrate with a surface complementary to a surface of the element, coating with polycrystalline diamond using CVD, and removing from the mold
10/18/2001DE10015371A1 Production of an epitaxial layer on a single crystalline substrate comprises heating a purified substrate in an epitaxy device while introducing organometallic precursors and a nitrogen-containing gas at a specified flow rate
10/17/2001EP1146569A2 Thin film forming method, thin film forming apparatus and solar cell
10/17/2001EP1146142A2 Process for forming fluorosilicate glass layers using high density plasma, for copper damascene integrated circuits
10/17/2001EP1146141A2 Liquid precursor mixtures for deposition of multicomponent metal containing materials
10/17/2001EP1146140A1 Process for deposition of oxides and nitrides with compositional gradients
10/17/2001EP1146014A2 Mesoporous silica films with mobile ion gettering and accelerated processing
10/17/2001EP1145759A1 Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions
10/17/2001EP1145311A1 Microelectronic structure
10/17/2001EP1145277A1 Gas injection system for plasma processing
10/17/2001EP1145273A2 Low contamination high density plasma etch chambers and methods for making the same
10/17/2001EP1144913A1 Burner manifold apparatus for use in a chemical vapor deposition process
10/17/2001EP1144722A1 Improved corrosion resistant coating
10/17/2001EP1144721A1 Material fabrication
10/17/2001EP1144720A1 Method for producing a heat insulating layer
10/17/2001EP1144719A2 Polycrystalline diamond layer with optimized surface properties