Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
10/2001
10/17/2001EP1144718A1 Indium source reagent compositions
10/17/2001EP1144716A2 Cvd process using bi alcoxides
10/17/2001EP1144134A1 Conformal coating of a microtextured surface
10/17/2001EP1144133A1 Plasma enhanced polymer deposition onto fixtures
10/17/2001EP1144132A1 Plasma enhanced chemical deposition for high and/or low index of refraction polymers
10/17/2001EP0975821B1 Cvd reactor and use thereof
10/17/2001EP0837911B1 Plate-like titanium dioxide pigment
10/17/2001EP0730671B1 Method and device for feeding precursors into a chemical vapour deposition chamber
10/17/2001EP0693137B1 Method and apparatus for coating hollow containers with inert or impermeable inner surface through plasma-assisted deposition of a primarily inorganic substance
10/17/2001CN1318015A Substrate treatment method
10/17/2001CN1073061C Thermal insulation coating components, their manufacture and gas turbine parts using them
10/16/2001US6303523 Plasma processes for depositing low dielectric constant films
10/16/2001US6303520 Silicon oxynitride film
10/16/2001US6303519 Method of making low K fluorinated silicon oxide
10/16/2001US6303518 Methods to improve chemical vapor deposited fluorosilicate glass (FSG) film adhesion to metal barrier or etch stop/diffusion barrier layers
10/16/2001US6303517 Fast deposition on spherical-shaped integrated circuits in non-contact CVD process
10/16/2001US6303501 Gas mixing apparatus and method
10/16/2001US6303499 Process for preparing semiconductor device
10/16/2001US6303495 Method of forming thin copper film and semiconductor device with thin copper film
10/16/2001US6303481 Method for forming a gate insulating film for semiconductor devices
10/16/2001US6303391 Vaporizing bismuth .beta.-diketonate precursor to form a vaporized precursor, and contacting vapors with substrate to deposit bismuth or bismuth containing film
10/16/2001US6303231 Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric memories formed with said coating solutions, as well as processes for production thereof
10/16/2001US6303226 Highly tetrahedral amorphous carbon coating on glass
10/16/2001US6303192 Process to improve adhesion of PECVD cap layers in integrated circuits
10/16/2001US6303007 For creating a plasma discharge includes a hollow, substantially cylindrical-shaped waveguide, and a coaxial refractive materials
10/16/2001US6302965 Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces
10/16/2001US6302964 One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
10/16/2001US6302963 Bell jar having integral gas distribution channeling
10/16/2001US6302768 Method for polishing surface of vapor-phase synthesized thin diamond film
10/16/2001US6302139 Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels
10/16/2001US6302057 Apparatus and method for electrically isolating an electrode in a PECVD process chamber
10/16/2001US6301936 Apparatus for manufacturing porous glass preform
10/11/2001WO2001076326A1 Optical monitoring and control system and method for plasma reactors
10/11/2001WO2001075956A1 Method of forming a dielectric film
10/11/2001WO2001075491A1 Selective deposition of material on a substrate according to an interference pattern
10/11/2001WO2001075189A2 Cleaning of a plasma processing system silicon roof
10/11/2001WO2001075188A2 Method of and apparatus for gas injection
10/11/2001WO2001074708A2 Method for depositing polycrystalline sige suitable for micromachining and devices obtained thereof
10/11/2001WO2001037321A3 Semiconductor devices with selectively doped iii-v nitride layers
10/11/2001WO2001037311A3 Method and apparatus for controlling the volume of a plasma
10/11/2001WO2000051732A9 The surface modification of solid supports through the thermal decomposition and functionalization of silanes
10/11/2001US20010029114 Method of forming polymeric layers of silicon oxynitride
10/11/2001US20010029112 Apparatus and method for use in manufacturing a semiconductor device
10/11/2001US20010029110 Precursors for making low dielectric constant materials with improved thermal stability
10/11/2001US20010029109 Nitride surface (formed by silicon compounds and ammonia or other nitriding gases) brought into a chemically active state by etching, hence film forming surface is easily oxidized by hydrogen peroxide, oxygen, ozone, nitric acid etc.
10/11/2001US20010029108 Substrate processeing apparatus, substrate processing method and electronic device manufacturing method
10/11/2001US20010029090 Dissolving barium, strontium, and titanium dipivaloyl compounds in an organic solvent, vaporizing, depositing to form barium strontium titanium oxide coating
10/11/2001US20010028956 Coated article including a DLC inclusive layer(s) and a layer(s) deposited using siloxane gas, and corresponding method
10/11/2001US20010028924 Sequential chemical vapor deposition
10/11/2001US20010028922 Vapor deposition
10/11/2001US20010028919 Method of removing diamond coating and method of manufacturing diamond-coated body
10/11/2001US20010028074 Having first and second tetraethyl orthosilicate-ozone films formed on protection film through chemical vapor deposition; second film has higher ozone concentration and lower water content as compared to first film
10/11/2001US20010028064 InAlGaN emitting light in ultraviolet short-wavelength region and process for preparing the same as well as ultraviolet light-emitting device using the same
10/11/2001US20010027970 Single-substrate-heat-processing apparatus for semiconductor process
10/11/2001US20010027843 Plasma treatment method and apparatus
10/11/2001US20010027750 Device for surface treatment and/or coating and/or producing construction elements, in particular, flat construction elements of glass, glass alloys or metal, by a continuous process
10/11/2001DE10016971A1 Process for coating and/or treating a surface of a substrate used in the production of semiconductor elements such as thin layer solar cells comprises bombarding the surface
10/10/2001EP1143501A1 Method of forming thin film
10/10/2001EP1143499A2 Film forming method for a semiconductor device
10/10/2001EP1143036A2 Apparatus and method for controlling the temperature of a wall of a reaction chamber
10/10/2001EP1143035A2 Apparatus and method for controlling the temperature of a wall of a reaction chamber
10/10/2001EP1143034A1 Method and apparatus for coating or treatment of a substrate
10/10/2001EP1143033A2 Silicon carbide and method for producing the same
10/10/2001EP1142894A2 Volatile precursors for deposition of metals and metal-containing films
10/10/2001EP1142008A1 Reduced degradation of metal oxide ceramic due to diffusion of a mobile specie therefrom
10/10/2001EP1142004A1 Method for boron doping wafers using a vertical oven system
10/10/2001EP1141443A1 A method of metallizing the surface of a solid polymer substrate and the product obtained
10/10/2001EP1141440A1 Polycrystalline diamond member and method of making the same
10/10/2001EP1141439A2 Distributed control system architecture and method for a material transport system
10/10/2001EP0970267B1 Susceptor designs for silicon carbide thin films
10/10/2001EP0845053B1 Composite body and process for its production
10/10/2001CN1317150A Vapor deposition routes to nanoporous silica
10/10/2001CN1317147A Method and apparatus for reducing contamination of substrate in substrate processing system
10/10/2001CN1317057A Super hydrophobic coated substrates
10/10/2001CN1317056A Cvd装置 Cvd device
10/10/2001CN1316547A Equipment and method for forming deposition film
10/10/2001CN1316546A Chemical vapor deposition equipment and chemical vapor deposition method
10/10/2001CN1316545A Depositing gamma-aluminium oxide by chemical steam deposition method
10/10/2001CN1072735C Method of depositing aluminuium film
10/09/2001US6301510 Method and apparatus to calibrate a semi-empirical process simulator
10/09/2001US6301434 Apparatus and method for CVD and thermal processing of semiconductor substrates
10/09/2001US6300600 Hot wall rapid thermal processor
10/09/2001US6300255 Method and apparatus for processing semiconductive wafers
10/09/2001US6300245 Inductively coupled plasma powder vaporization for fabricating integrated circuits
10/09/2001US6300240 Conforming antireflective coating on films, sharp pattern photoresists
10/09/2001US6300226 Formed SIC product and manufacturing method thereof
10/09/2001US6300225 Plasma processing method
10/09/2001US6300217 Vpor deposition, a substrate, setting the temperature and crystallizing
10/09/2001US6300185 Polyacrystalline silicon film formation method
10/09/2001US6299971 Ceramic coatings containing layered porosity
10/09/2001US6299948 Introducing treatment gas comprising one or more components into a treatment reactor, the treatment reactor comprising two exciting electrodes; applying voltage to electrodes to cause discharge in a region of the treatment gas
10/09/2001US6299725 Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
10/09/2001US6299692 Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition
10/09/2001US6299691 Method of and apparatus for processing a substrate under a reduced pressure
10/09/2001US6299689 Reflow chamber and process
10/09/2001US6299683 Method and apparatus for the production of SiC by means of CVD with improved gas utilization
10/09/2001US6299425 Member having sliding contact surface, compressor and rotary compressor
10/04/2001WO2001073957A2 Battery-operated wireless-communication apparatus and method
10/04/2001WO2001073883A2 Low-temperature fabrication of thin-film energy-storage devices
10/04/2001WO2001073870A2 Integrated capacitor-like battery and associated method