Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
11/2001
11/08/2001WO2001083084A1 Gas cabinet assembly comprising sorbent-based gas storage and delivery system
11/08/2001WO2001083082A1 Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels
11/08/2001WO2001082958A2 Methods of producing membrane vesicles
11/08/2001US20010039115 Method and apparatus for manufacturing semiconductor devices
11/08/2001US20010038894 Gas barrier film
11/08/2001US20010037771 Apparatus And Method For Aligning A Wafer
11/08/2001US20010037770 Plasma processing apparatus and processing method
11/08/2001US20010037769 Method of forming thin film onto semiconductor substrate
11/08/2001US20010037768 Conveyor device and film formation apparatus for a flexible substrate
11/08/2001US20010037767 Bell jar having integral gas distribution channeling
11/08/2001US20010037761 Epitaxial silicon wafer free from autodoping and backside halo and a method and apparatus for the preparation thereof
11/08/2001US20010037760 Epitaxial film produced by sequential hydride vapor phase epitaxy
11/08/2001DE10119766A1 Radio frequency plasma reactor has distribution chamber with wall opposite metal plate with gas inlet openings distributed along wall and connected to at least one gas feed line to reactor
11/08/2001DE10023218A1 Coating a heat exchanger comprises subjecting the heat exchanger to a plasma stream produced from a process gas to which silicon dioxide, aluminum oxide, silicon compounds and/or titanium compounds are added
11/08/2001CA2407358A1 Throughput enhancement for single wafer reactor
11/08/2001CA2407225A1 Methods of producing membrane vesicles
11/07/2001EP1152463A1 Semiconductor device and its production method
11/07/2001EP1152066A1 Coloured metal nitride films and process of manufacturing
11/07/2001EP1151155A1 Cdv method of and reactor for silicon carbide monocrystal growth
11/07/2001EP1068214A4 Lewis base adducts of anhydrous mononuclear tris(beta-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same
11/07/2001EP1007761B1 Gas distribution system for a process reactor and method for processing semiconductor substrates
11/07/2001EP0857224A4 Durable plasma treatment apparatus and method
11/07/2001EP0850324B1 Coated turning insert
11/07/2001EP0769980B1 Membrane reparation and pore size reduction using interfacial ozone assisted chemical vapor deposition
11/07/2001CN1321333A Wafer holder
11/07/2001CN1321332A Plasma polymerizing apparatus having electrode with lot of uniform edges
11/07/2001CN1321326A Device and method for generating local plasma by micro-structure electrode discharges with microwaves
11/07/2001CN1321132A Plastic container having carbon-treated internal surface
11/07/2001CN1320952A Process for preparing film cathode of nm carbon tubes used for generating catalyst particles
11/06/2001US6313430 Plasma processing apparatus and plasma processing method
11/06/2001US6313047 Mixing organic tantalum and oxidizing agent in two different batches, adsorbing onto surface of target substrate first and second layers of tantalum oxide
11/06/2001US6313035 Chemical vapor deposition using organometallic precursors
11/06/2001US6312816 A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators
11/06/2001US6312808 Hydrophobic coating with DLC & FAS on substrate
11/06/2001US6312761 Film forming method for processing tungsten nitride film
11/06/2001US6312569 Chemical vapor deposition apparatus and cleaning method thereof
11/06/2001US6312526 Chemical vapor deposition apparatus and a method of manufacturing a semiconductor device
11/06/2001US6312525 Modular architecture for semiconductor wafer fabrication equipment
11/06/2001US6312524 Plasma CVD apparatus
11/06/2001US6311959 Method and apparatus for generating controlled mixture of organic vapor and inert gas
11/06/2001US6311902 Dispersion nozzle for gas delivery tube
11/06/2001US6311638 Plasma processing method and apparatus
11/01/2001WO2001082368A2 Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
11/01/2001WO2001082355A2 Method and apparatus for plasma cleaning of workpieces
11/01/2001WO2001082349A1 Thermal processing system and thermal processing method
11/01/2001WO2001082348A1 Thermal processing system
11/01/2001WO2001082341A1 Thermal processing system and thermal processing method
11/01/2001WO2001082328A2 Magnetic barrier for plasma in chamber exhaust
11/01/2001WO2001082019A1 Method and device for conditioning atmosphere in a process chamber
11/01/2001WO2001081780A1 Magnetic bearing and magnetic levitation apparatus
11/01/2001WO2001081651A1 Method and system for pumping semiconductor equipment from transfer chambers
11/01/2001WO2000066353A8 Wear-resistant polymeric articles and methods of making the same
11/01/2001US20010036754 Flattened multilayer dielectric film
11/01/2001US20010036752 Methods and apparatus for forming a high dielectric film and the dielectric film formed thereby
11/01/2001US20010036751 Method for forming a thin oxide layer using wet oxidation
11/01/2001US20010036706 Thermal processing apparatus for introducing gas between a target object and a cooling unit for cooling the target object
11/01/2001US20010036509 CVD Process for forming a thin film
11/01/2001US20010036507 Surface-treating holder having tubular structure and method using the same
11/01/2001US20010036388 Coated cutting tool and method for producing the same
11/01/2001US20010035581 Electronic devices with barium barrier film and process for making same
11/01/2001US20010035530 Vapor phase deposition system
11/01/2001US20010035241 Method for forming metal nitride film
11/01/2001US20010035132 Electrical coupling between chamber parts in electronic device processing equipment
11/01/2001US20010035131 Single-substrate-heat-processing apparatus for semiconductor process
11/01/2001US20010035127 Deposition reactor having vaporizing, mixing and cleaning capabilities
11/01/2001US20010035124 Substrate processing apparatus and semiconductor manufacturing method
10/2001
10/31/2001EP1150345A2 Fluorine-containing materials and processes
10/31/2001EP1150332A2 Integration of remote plasma generator with semiconductor processing chamber
10/31/2001EP1150331A2 Gas distribution plate assembly for providing laminar gas flow across the surface of a substrate
10/31/2001EP1150330A2 Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
10/31/2001EP1150328A2 Vacuum system for film formation apparatus and process, leak judgement method, and computer-readable recording medium with recorded leak-judgment-executable program
10/31/2001EP1149934A2 CVD synthesis of silicon nitride materials
10/31/2001EP1149933A1 Deposition method of dielectric films having a low dielectric constant
10/31/2001EP1149932A2 Thermal chemical vapor deposition apparatus and method of synthesizing carbon nanotubes using the same
10/31/2001EP1149184A1 Method and system for producing semiconductor crystals using temperature management
10/31/2001EP0663456B1 Method of producing coated particles
10/31/2001CN1320062A Surface coatings
10/31/2001CN1319883A Ultraviolet correcting method and device used in forming low K film
10/31/2001CN1319683A Apparatus for treatment plasma
10/31/2001CN1319682A Free floating barrier and semiconductor technological system
10/31/2001CN1074006C Coated plastic substrate
10/30/2001US6310432 Surface treatment process used in growing a carbon film
10/30/2001US6310373 Metal insulator semiconductor structure with polarization-compatible buffer layer
10/30/2001US6310327 Rapid thermal processing apparatus for processing semiconductor wafers
10/30/2001US6310323 Water cooled support for lamps and rapid thermal processing chamber
10/30/2001US6310228 Organic copper compound, liquid mixture containing the compound, and copper thin-film prepared using the solution
10/30/2001US6309713 Deposition of tungsten nitride by plasma enhanced chemical vapor deposition
10/30/2001US6309702 Process for the production of improved boron coatings
10/30/2001US6309508 Spinning disk evaporator
10/30/2001US6309466 Vapor deposition apparatus
10/30/2001US6309465 CVD reactor
10/30/2001US6309458 Method for fabricating silicon thin film
10/30/2001US6308738 Drafting apparatus
10/30/2001CA2227233C Plasma treatment apparatus for large area substrates
10/25/2001WO2001080309A2 A method to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon using a silicon carbide adhesion promoter layer
10/25/2001WO2001080298A1 Uv pretreatment process for ultra-thin oxynitride for formation of silicon nitride films
10/25/2001WO2001080297A1 Plasma processing apparatus
10/25/2001WO2001080291A1 Methods and apparatus for thermally processing wafers
10/25/2001WO2001080286A2 Deposited thin films and their use in separation and sarcrificial layer applications
10/25/2001WO2001079587A1 A process for the purification of organometallic compounds or heteroatomic organic compounds with hydrogenated getter alloys