Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
11/2001
11/21/2001CN2460530Y Non-crystal-carbon film coating machine for internal wall of plastic bottle
11/21/2001CN1323276A Method and apparatus for the preparation of high purity phosphine or other gas
11/21/2001CN1075244C Method for producing metal wire
11/20/2001US6321134 Clustertool system software using plasma immersion ion implantation
11/20/2001US6320736 Chuck having pressurized zones of heat transfer gas
11/20/2001US6320320 Method and apparatus for producing uniform process rates
11/20/2001US6320154 Plasma processing method
11/20/2001US6319860 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process
11/20/2001US6319856 Methods of forming dielectric layers and methods of forming capacitors
11/20/2001US6319841 Semiconductor processing using vapor mixtures
11/20/2001US6319832 Methods of making semiconductor devices
11/20/2001US6319766 Method of tantalum nitride deposition by tantalum oxide densification
11/20/2001US6319765 Method for fabricating a memory device with a high dielectric capacitor
11/20/2001US6319764 Method of forming haze-free BST films
11/20/2001US6319728 Decreasing chemical resistance of copper on surface; deposit copper containing moisture upon substrate, plasma treat copper and monitor chemical resistance
11/20/2001US6319608 Titanium chromium alloy coated diamond crystals for use in saw blade segments and method for their production
11/20/2001US6319567 Vaporization and injection of tantalum nitrogen compounds
11/20/2001US6319565 Applying metal such as antimony from metal hydride and metal hydride mixtures
11/20/2001US6319556 Reflective surface for CVD reactor walls
11/20/2001US6319554 Method and apparatus for surface metallization
11/20/2001US6319553 Isolation of incompatible processes in a multi-station processing chamber
11/20/2001US6319439 Method of synthesizing even diamond film without cracks
11/20/2001US6319419 Method of manufacturing member for thin-film formation apparatus and the member for the apparatus
11/20/2001US6319373 Substrate transfer apparatus of substrate processing system
11/20/2001US6319327 MOCVD system
11/20/2001US6319326 Apparatus for surface modification of polymer, metal and ceramic materials using ion beam
11/20/2001US6319325 Apparatus for producing thin film, process for producing thin film and guide roller
11/20/2001US6319324 Method and apparatus for elimination of TEOS/ozone silicon oxide surface sensitivity
11/20/2001US6318382 Cleaning method and cleaning apparatus, and electrophotographic photosensitive member and cleaning method of electrophotographic photosensitive member
11/20/2001US6318381 Methods of cleaning vaporization surfaces
11/20/2001CA2244248C Process for producing wear-resistant boride layers on metallic material surfaces
11/20/2001CA2041360C Hardened insert and brake shoe for backstopping clutch
11/15/2001WO2001086035A1 Epitaxial silicon wafer free from autodoping and backside halo
11/15/2001WO2001086034A2 Modified susceptor for use in chemical vapor deposition process
11/15/2001WO2001086019A1 Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth
11/15/2001WO2001085612A2 Process for preparing carbon nanotubes
11/15/2001WO2001085364A1 Combinatorial synthesis of material chips
11/15/2001WO2001017569A3 Improved container composition for radiopharmaceutical agents
11/15/2001WO2000079568A3 Plasma reactor with multiple small internal inductive antennas
11/15/2001WO2000000663A9 Method and device for displacing wafers in a deposition reactor
11/15/2001US20010041463 Electo-optical apparatus and method for fabricating a film, semiconductor device and memory device
11/15/2001US20010041458 Forming silicon-containing insulating film on substrate by plasmanizing and reacting reaction gas that contains hydrogen, an oxidizing gas, and a compound having siloxane bond and silicon-alkyl bond
11/15/2001US20010041442 Fabrication process of semiconductor device with titanium film.
11/15/2001US20010041441 Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds
11/15/2001US20010041374 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
11/15/2001US20010041250 Graded thin films
11/15/2001US20010041230 Borating wing boron halide
11/15/2001US20010041218 High rate silicon nitride deposition method at low pressures
11/15/2001US20010041107 Cemented carbide tool and method of making
11/15/2001US20010040238 Electronic devices with composite atomic barrier film and process for making same
11/15/2001US20010040157 Heat exchanger apparatus for a semiconductor wafer support and method of fabricating same
11/15/2001US20010040144 Methods of cleaning vaporization surfaces
11/15/2001US20010039924 Apparatus for forming deposited film
11/15/2001US20010039923 Vaporizing device for CVD source materials and CVD apparatus employing the same
11/15/2001US20010039922 Processing chamber
11/15/2001US20010039921 Method and apparatus for controlling rate of pressure change in a vacuum process chamber
11/15/2001US20010039919 Chemical vapor deposition and powder formation using thermal spray
11/15/2001US20010039917 Silicon epitaxial wafer and production method therefor
11/14/2001EP1154466A1 Method and apparatus for plasma processing
11/14/2001EP1154040A2 Reduction of plasma edge effect on plasma enhanced CVD processes
11/14/2001EP1154039A1 A rapid thermal processing apparatus for processing semiconductor wafers
11/14/2001EP1154038A1 Method of conditioning a chamber for chemical vapor deposition
11/14/2001EP1154037A1 Methods for improving chemical vapor deposition processing
11/14/2001EP1154036A1 Gas reactions to eliminate contaminates in a CVD chamber
11/14/2001EP1154035A1 Amorphous carbon film containing oxide
11/14/2001EP1153894A1 Manufacturing method of optical waveguide
11/14/2001EP1153739A1 Aerogel substrate and method for preparing the same
11/14/2001EP1153340A1 Method of regulating a high temperature gaseous phase process and use of said method
11/14/2001EP1153157A1 Thermal barrier coating resistant to sintering
11/14/2001EP1153155A1 Planetary system workpiece support and method for surface treatment of workpieces
11/14/2001EP1153000A1 Method for making a bowl in thermostructural composite material in particular for a monocrystalline silicon producing installation
11/14/2001EP1152993A1 Method for producing an anhydrite iii or alpha based hydraulic bonding agent
11/14/2001EP0871795A4 A scalable helicon wave plasma processing device with a non-cylindrical source chamber
11/14/2001EP0793855B1 Plasma processor for large workpieces
11/14/2001CN1322264A Textile articles or clothing having supper hydrophobic coating
11/14/2001CN1322007A Plasma processing device
11/14/2001CN1321993A Film capacitor and its production method
11/13/2001US6316797 Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
11/13/2001US6316754 Frequency selected, variable output inductor heater system
11/13/2001US6316734 Flexible circuits with static discharge protection and process for manufacture
11/13/2001US6316361 CVD reactor and process for producing an epitally coated semiconductor wafer
11/13/2001US6316167 Lithography structure with multilayer element
11/13/2001US6316098 Molecular layer epitaxy method and compositions
11/13/2001US6316064 Chemical vapor deposition using a specific organoruthenium complex, a beta-diketonato ruthenium useful as a ruthenium source
11/13/2001US6316063 Chemical vapor deposition using a source gas that includes an alkyl-alkoxysilane
11/13/2001US6316062 Forming a carbon protective film onto a disc using a reactant gas containing carbon atoms as a starting material, according to a plasma cvd method, using a mixed gas of hydrocarbon and hydrogen
11/13/2001US6316055 Near-room temperature thermal chemical vapor deposition of oxide films
11/13/2001US6316054 Heating a surface to be coated with the carbon layer; adjusting a partial pressure of moisture in a film deposition system of the carbon layer to 5 times 10-16 torr or less; and then starting a film deposition process of the carbon layer.
11/13/2001US6316052 Method for the surface treatment of vacuum materials and surface treated vacuum
11/13/2001US6316045 Using a primary pump, a secondary pump, speed control means for controlling the speed of the primary pump, and first gas analyzer means for analyzing the extracted gases upstream from the primary pump and for producing first analysis signals.
11/13/2001US6315859 Apparatus and method for improving uniformity in batch processing of semiconductor wafers
11/13/2001US6315834 Method for removing extraneous matter by using fluorine-containing solution
11/13/2001CA2261062C Hard graphite-like material bonded by diamond-like framework
11/11/2001CA2308015A1 Method for manufacturing carbon nanotubes as functional elements of mems devices
11/08/2001WO2001084622A1 Wafer supporting device of semiconductor manufacturing device
11/08/2001WO2001083852A1 Method and apparatus for distributing gas within high density plasma process chamber to ensure uniform plasma
11/08/2001WO2001083847A2 Method of making dielectric films
11/08/2001WO2001083846A1 Method for producing ceramic and apparatus for producing the same, semiconductor device, and piezoelectric device
11/08/2001WO2001083843A1 Substrate processing system
11/08/2001WO2001083333A1 Throughput enhancement for single wafer reactor