C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes

Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/2001
12/04/2001	US6325017 Apparatus for forming a high dielectric film
12/04/2001	CA2158568C Method and apparatus for the combustion chemical vapor deposition of films and coatings
11/2001
11/29/2001	WO2001090441A2 Surface alloyed high temperature alloys
11/29/2001	WO2001090439A1 Method for making an extreme ultraviolet microlithography transmission modulator and resulting modulator
11/29/2001	WO2001090436A2 Mobile plating system and method
11/29/2001	WO2001090434A2 Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
11/29/2001	WO2001089893A1 Method and device for coating at least one wiper-blade element
11/29/2001	US20010046768 Methods and apparatus for thermally processing wafers
11/29/2001	US20010046567 Siloxan polymer film on semiconductor substrate and method for forming same
11/29/2001	US20010046558 By chemical vapor deposition of atomic layer deposition; using adduct of neutral ligand improves reaction stability, uniformity and reproducibility of metal sulfide and selenide thin films
11/29/2001	US20010045351 Plasma polymerization on surface of material
11/29/2001	US20010045262 Chemical vapor deposition chamber
11/29/2001	US20010045187 Passing gas stream through ionic liquid
11/29/2001	DE10026540A1 Gegenstand, insbesondere Implantat Object, in particular implant
11/29/2001	DE10025346A1 Amorphous and/or polycrystalline growth for a composite semiconductor based comprises growing a first composite semiconductor layer in the gas phase on a substrate
11/29/2001	DE10022159A1 Substrate holding arrangement for coating devices comprises a tempering device and a holder having an inner chamber system with a chamber region containing a fluid which vaporizes in a partial region and condenses in another region
11/29/2001	CA2410347A1 Mobile plating system and method
11/29/2001	CA2408959A1 Method for making an extreme ultraviolet microlithography transmission modulator and resulting modulator
11/28/2001	EP1158577A2 Method for forming an insulating film with low dielectric constant
11/28/2001	EP1158576A2 Method for etching a compound metal oxide film and processing apparatus
11/28/2001	EP1158568A2 Plasma assisted semiconductor substrate processing chamber
11/28/2001	EP1158565A2 Toroidal plasma source for plasma processing
11/28/2001	EP1158072A2 Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
11/28/2001	EP1158071A2 Method for depositing a layer on a surface of a substrate
11/28/2001	EP1158070A1 Tungsten carbide coatings and method for producing the same
11/28/2001	EP1157598A1 Method and apparatus for deposition of diamond-like carbon coatings from a hall-current ion source
11/28/2001	EP1157415A1 Silicon oxynitride film
11/28/2001	EP1157145A1 Method and installation for forming a deposit on a substrate
11/28/2001	EP1157143A1 Mt cvd process
11/28/2001	EP1156992A1 Densification of porous bodies
11/28/2001	EP0633997B1 A rapid thermal processing apparatus for processing semiconductor wafers
11/28/2001	CN1324412A Method for metallizing surface of a solid polymer substrate and the product obtd.
11/28/2001	CN1323917A Film deposition equipment, film deposition art, vacuum system and leakage judging method
11/28/2001	CN1075658C Membrane forming material and circuit layout forming method
11/28/2001	CN1075569C Method and apparatus for preparing crystalline films for solid-state lasers
11/27/2001	US6324439 Method and apparatus for applying films using reduced deposition rates
11/27/2001	US6323595 High frequency discharging method and apparatus, and high frequency processing apparatus
11/27/2001	US6323511 Structures including low carbon/oxygen conductive layers
11/27/2001	US6323463 Method and apparatus for reducing contamination in a wafer loadlock of a semiconductor wafer processing system
11/27/2001	US6323297 Low dielectric constant materials with improved thermal and mechanical properties
11/27/2001	US6323142 APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical
11/27/2001	US6323141 Method for forming anti-reflective coating layer with enhanced film thickness uniformity
11/27/2001	US6323137 Method for forming an arsenic doped dielectric layer
11/27/2001	US6323134 Plasma processing methods and apparatus
11/27/2001	US6323133 Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
11/27/2001	US6323129 Process for maintaining a semiconductor substrate layer deposition equipment chamber in a preconditioned and low particulate state
11/27/2001	US6323126 Tungsten formation process
11/27/2001	US6323119 CVD deposition method to improve adhesion of F-containing dielectric metal lines for VLSI application
11/27/2001	US6323081 Diffusion barrier layers and methods of forming same
11/27/2001	US6322943 Photoconductive layer comprising a non-single crystal material containing silicon atoms as a matrix and a surface layer carbon containing at least fluorine
11/27/2001	US6322756 Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases
11/27/2001	US6322671 Method for formation of protective coatings with quasi-plasticity properties
11/27/2001	US6322662 Plasma treatment system
11/27/2001	US6322661 Method and apparatus for controlling the volume of a plasma
11/27/2001	US6322057 Auxiliary gasline-heating unit in chemical vapor deposition
11/27/2001	US6321680 Vertical plasma enhanced process apparatus and method
11/25/2001	CA2357232A1 Surface alloyed high temperature alloys
11/22/2001	WO2001088221A1 Plasma cvd apparatus and method
11/22/2001	WO2001088220A1 System for precision control of the position of an atmospheric plasma jet
11/22/2001	WO2001087789A1 Method for imparting hydrophilicity to substrate
11/22/2001	WO2001087772A1 Method and apparatus for production of high purity silicon
11/22/2001	WO2001029282A3 Fluid processing system
11/22/2001	US20010044222 Method for forming a nitridized interface on a semiconductor substrate
11/22/2001	US20010044220 Method Of Forming Silicon Oxynitride Films
11/22/2001	US20010044217 Plasma deposition of spin chucks to reduce contamination of silicon wafers
11/22/2001	US20010044033 Surface treated vacuum material and a vacuum chamber having an interior surface comprising same
11/22/2001	US20010044030 Hydrophobic coating with DLC & FAS on substrate
11/22/2001	US20010044028 Diamond-like carbon coated pet film and pet film glass laminate glazing structures for added hardness and abrasion resistance
11/22/2001	US20010044027 Diamond-like carbon coating on glass for added hardness and abrasion resistance
11/22/2001	US20010043989 Film forming apparatus and film forming method
11/22/2001	US20010043984 Apparatus for monitoring thickness of deposited layer in reactor and dry processing method
11/22/2001	US20010043453 Method of forming metal electrodes
11/22/2001	US20010042930 Auxiliary gasline-heating unit in chemical vapor deposition
11/22/2001	US20010042799 Showerhead apparatus for radical-assisted deposition
11/22/2001	US20010042744 Heating apparatus
11/22/2001	US20010042554 Used in semiconductor manufacturing, a plate-shaped protector made of dielectric and having similar electrical properties as the deposited film; removing thin film deposited on inner face of vacuum vessel
11/22/2001	US20010042523 Method and apparatus for feeding gas phase reactant into a reaction chamber
11/22/2001	US20010042514 CVD apparatus
11/22/2001	US20010042513 Apparatus for improved remote microwave plasma source for use with substrate processing systems
11/22/2001	US20010042512 CVD apparatus
11/22/2001	US20010042511 Reduction of plasma edge effect on plasma enhanced CVD processes
11/22/2001	US20010042510 Hollow containers with inert or impermeable inner surface through plasma-assisted surface reaction or on-surface polymerization
11/22/2001	US20010042505 Precursor mixtures for use in preparing layers on substrates
11/22/2001	US20010042290 Method of forming electrode film
11/21/2001	EP1156518A1 Heat treating device and heat treating method
11/21/2001	EP1156516A1 Method and apparatus for plasma processing
11/21/2001	EP1156511A1 Remote plasma CVD apparatus
11/21/2001	EP1156136A1 Method for manufacturing an array of indented diamond cylinders
11/21/2001	EP1156135A2 Vacuum processing apparatus
11/21/2001	EP1156134A2 Method and apparatus of depositing a layer of nitrogen-doped fluorinated silicate glass
11/21/2001	EP1156133A2 Method of manufacturing a multilayered dielectric film and semiconductor device
11/21/2001	EP1156132A2 Method of forming electrode film
11/21/2001	EP1156131A1 Process for making coated plastic parts and its application
11/21/2001	EP1156130A1 Plasma processing container internal member and production method therefor
11/21/2001	EP1156096A1 Titanium chromium alloy coated diamond crystals for use in saw blade segments and method for their production
11/21/2001	EP1155442A1 Multilayer structure with controlled internal stresses and method for making same
11/21/2001	EP1155437A1 Cooled showerhead for rapid thermal processing (rtp) system
11/21/2001	EP1155164A1 In situ chemical generator and method
11/21/2001	EP0836654B1 Process for the preparation of magnesium oxide films using organomagnesium compounds
11/21/2001	EP0822995B1 Modification of surfaces of polymers

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