Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/2001
12/13/2001US20010050144 Plasma processing apparatus
12/13/2001US20010050059 Plasma processing apparatus with a dielectric plate having a thickness based on a wavelength of a microwave introduced into a process chamber through the dielectric plate
12/13/2001US20010050058 Plasma process apparatus
12/13/2001US20010050057 Plasma CVD device and discharge electrode
12/13/2001US20010050056 Graft polymerization
12/13/2001US20010050054 Process tube having slit type process gas injection portion and hole type waste gas exhaust portion, and apparatus for fabricating semiconductor device
12/13/2001US20010050053 Gate valve for an integrated temperature controlled exhaust and cold trap assembly
12/13/2001US20010050051 Gas delivering device
12/13/2001US20010050039 Method of forming a thin film using atomic layer deposition method
12/13/2001US20010050028 Forming dielectrics
12/13/2001DE10028022A1 Production of highly ordered low molecular inorganic thin action layers at low temperatures on silicon chips in e.g., pyroelectric detectors comprises applying action layer to substrate with a highly ordered polytetrafluoroethylene coating
12/13/2001DE10012516C1 Component with a transparent scratch-resistant protective gradient layer consisting of silicon, oxygen, hydrocarbon residues and a metal whose oxides absorb UV light
12/13/2001CA2409282A1 Barrier layer for polymers and containers
12/12/2001EP1162667A1 Semiconductor photodetector and fabrication process thereof
12/12/2001EP1162652A2 Semiconductor-manufacturing device
12/12/2001EP1162651A2 Substrate rotating apparatus
12/12/2001EP1162650A2 Apparatus for surface conditioning
12/12/2001EP1162647A2 Cathode electrode for plasma source and plasma source for a vacuum coating system
12/12/2001EP1162285A2 Method and apparatus for forming diamond film
12/12/2001EP1161574A1 Method and apparatus for arc deposition
12/12/2001EP1161573A1 Tool with a molybdenum sulphide coating and method for producing the same
12/12/2001EP1161572A1 Tool with a molybdenum sulfide containing coating and method for its production
12/12/2001EP0871804B1 Rotatable susceptor with integrated ferromagnetic element
12/12/2001EP0730679B1 An epitaxial reactor, susceptor and gas-flow system
12/12/2001CN1326426A Method and device for spraying of material
12/11/2001US6329899 Formation of thin film resistors
12/11/2001US6329540 Volatile organogallium compound and deposition of gallium nitride film using same
12/11/2001US6329303 Thin film forming method, thin film forming apparatus and method for manufacturing semiconductor device
12/11/2001US6329297 Dilute remote plasma clean
12/11/2001US6329286 Methods for forming conformal iridium layers on substrates
12/11/2001US6329237 Method of manufacturing a capacitor in a semiconductor device using a high dielectric tantalum oxide or barium strontium titanate material that is treated in an ozone plasma
12/11/2001US6328864 Vacuum processing apparatus
12/11/2001US6328808 Apparatus and method for aligning and controlling edge deposition on a substrate
12/11/2001US6328807 Chuck heater for improved planar deposition process
12/11/2001US6328805 Equipment for processing a container using a low-pressure plasma having an improved vacuum circuit
12/11/2001US6328803 Method and apparatus for controlling rate of pressure change in a vacuum process chamber
12/11/2001US6328802 Method and apparatus for determining temperature of a semiconductor wafer during fabrication thereof
12/11/2001US6328221 Method for controlling a gas injector in a semiconductor processing reactor
12/11/2001US6328043 Filtering technique for CVD chamber process gases
12/11/2001US6328041 Universal cleaning wafer for a plasma chamber
12/11/2001CA2074964C Formation process of a deposited film containing silica on a surface of a glass piece
12/11/2001CA2019077C Coated cutting insert
12/06/2001WO2001093321A1 Gas introducing system for temperature control of processed body
12/06/2001WO2001093312A2 Method for depositing a selected thickness of an interlevel dielectric material to achieve optimum global planarity on a semiconductor wafer
12/06/2001WO2001092611A1 Method of forming high-quality diamond and device therefor
12/06/2001WO2001092172A1 Method of making a titania-doped fused silica preform
12/06/2001WO2001033615A3 Method and apparatus for supercritical processing of multiple workpieces
12/06/2001WO1999062099A9 Gas distributor for a semiconductor process chamber
12/06/2001US20010049205 After forming a layer comprising liquid silicon oxide precursor (especially SI(O4)4) onto a substrate, the layer is doped and transformed into a solid doped silicon oxide containing layer
12/06/2001US20010049203 Chemical vapor deposition from bis-trimethylsilylmethane as a source for silicon and carbon and an oxygen gas as a source for oxygen
12/06/2001US20010049192 Method and system for selectively coupling a conductive material to a surface of a semiconductor device
12/06/2001US20010049181 Plasma treatment for cooper oxide reduction
12/06/2001US20010049080 Heat treatment system and method
12/06/2001US20010049066 Cleaning method and cleaning apparatus, and electrophotographic photosensitive member and cleaning method of electrophotographic photosensitive member
12/06/2001US20010049003 Decorative stone
12/06/2001US20010048981 High speed plasma vapor deposition; exhaustion ventilation gas
12/06/2001US20010048980 High density plasma enhanced chemical vapor deposition method
12/06/2001US20010048973 Using silicon compound and hydrazine; vapor phase
12/06/2001US20010048972 Galvanizing; controlling tolerances
12/06/2001US20010048867 Method and apparatus for processing semiconductor wafers
12/06/2001US20010048171 Method of producing near-net shape free standing articles by chemical vapor deposition
12/06/2001US20010048146 Method of forming composite silicon oxide layer over a semiconductro device
12/06/2001US20010048118 Semiconductor photodetection device and fabrication process thereof
12/06/2001US20010048095 Method for improving thermal stability of fluorinated amorphous carbon low dielectric constant materials
12/06/2001US20010047849 Apparatus and method for fabricating semiconductor device
12/06/2001US20010047764 Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors
12/06/2001US20010047762 Processing apparatus
12/06/2001US20010047761 Vertical oven with a boat for the uniform treatment of wafers
12/06/2001US20010047759 Plasma CVD apparatus
12/06/2001US20010047758 Apparatus and method for coating a substrate by means of a chemical gas phase corporation process
12/06/2001US20010047756 Gas distribution system
12/06/2001US20010047750 Apparatus and method for depositing semiconductor film
12/06/2001DE10026180A1 Apparatus for coating a semiconductor wafer in the production of microelectronics has a gas inlet system for introducing process gases into the process chamber via inlets
12/06/2001DE10025689A1 Verfahren und Vorrichtung zum Beschichten von mindestens einem Wischgummi Method and device for coating at least one wiper rubber
12/06/2001CA2409156A1 Method for depositing a selected thickness of an interlevel dielectric material to achieve optimum global planarity on a semiconductor wafer
12/05/2001EP1160879A2 Method of forming silicon-based thin film, silicon-based thin film and photovoltaic element
12/05/2001EP1160870A2 Oriented rhombohedral composition of PbZr1-xTix03 thin films for low voltage operation ferroelectric ram
12/05/2001EP1160838A2 Heat treatment system and method
12/05/2001EP1160826A2 Coating, modification and etching of substrate surface with particle beam irradiation
12/05/2001EP1160361A1 Method of manufacturing silicon carbide, silicon carbide, composite material, and semiconductor element
12/05/2001EP1160355A2 Bubbler
12/05/2001EP1160354A1 Apparatus and method for depositing semiconductor film
12/05/2001EP1160353A1 Coated cemented carbide cutting tool member and process for producing the same
12/05/2001EP1160352A1 Method of adjusting the size of cooling holes of a gas turbine component
12/05/2001EP1159465A1 Processing chamber for atomic layer deposition processes
12/05/2001EP1159464A1 Wafer processing reactor having a gas flow control system and method
12/05/2001EP1080244B1 Anti-adherent coating and method for the production thereof
12/05/2001EP0650465B1 Conversion of fullerenes to diamond
12/05/2001CN1075841C Process for etching diamond film pattern with reactive ion beam
12/04/2001US6327135 Thin film capacitors on gallium arsenide substrate
12/04/2001US6326690 Method of titanium/titanium nitride integration
12/04/2001US6326505 Methods, complexes, and system for forming metal-containing films
12/04/2001US6326322 Method for depositing a silicon nitride layer
12/04/2001US6326090 Ten different inorganic materials that cannot interdiffuse, area within regions is hydrophilic, outside regions is hydrophobic
12/04/2001US6326064 Introducing carbon-free silicon reactant, halogen etchant, and oxygen reactant into reactor, growing film by decomposing and plasma reacting, removing atoms in disordered crystallographic state
12/04/2001US6326056 Mobile cellular tumble coating method
12/04/2001US6325858 Long life high temperature process chamber
12/04/2001US6325857 CVD apparatus
12/04/2001US6325855 Gas collector for epitaxial reactors
12/04/2001US6325018 Flat antenna having openings provided with conductive materials accommodated therein and plasma processing apparatus using the flat antenna