| Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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| 12/25/2001 | US6333103 Aluminum oxide-coated article |
| 12/25/2001 | US6333099 For metal machining |
| 12/25/2001 | US6333098 For dry milling of grey cast iron |
| 12/25/2001 | US6333079 Feeding material gas for film formation into reactor inside of which is kept evacuated; decomposing gas into plasma by using power having high frequency to form deposited film on substrate provided inside reactor |
| 12/25/2001 | US6333066 Method for forming PZT thin film using seed layer |
| 12/25/2001 | US6333010 Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases |
| 12/25/2001 | US6332947 Plasma processing apparatus and plasma processing method using the same |
| 12/25/2001 | US6332928 High throughput OMPVE apparatus |
| 12/25/2001 | US6332927 Substrate processing apparatus |
| 12/25/2001 | US6332926 Apparatus and method for selectively coating internal and external surfaces of an airfoil |
| 12/25/2001 | US6332925 Evacuation system |
| 12/25/2001 | US6332898 Substrate processing apparatus and maintenance method therefor |
| 12/25/2001 | US6332601 Liquid vaporizers for semiconductor processing systems |
| 12/25/2001 | US6332425 Surface treatment method and system |
| 12/25/2001 | US6332363 Biosensor, method of forming and use |
| 12/25/2001 | CA2229423C Method of and device for measuring return losses in optical fibre components |
| 12/20/2001 | WO2001097264A1 Hot plate |
| 12/20/2001 | WO2001097263A1 Hot plate |
| 12/20/2001 | WO2001096634A1 Thick single crystal diamond layer method for making it and gemstones produced from the layer |
| 12/20/2001 | WO2001096633A1 Single crystal diamond prepared by cvd |
| 12/20/2001 | WO2001096407A2 Apparatus and process for plasma treatment of particulate matter |
| 12/20/2001 | WO2001038625A3 Method for making a bowl in thermostructural composite material, resulting bowl and use of same as crucible support |
| 12/20/2001 | WO2001038596A3 Plasma coating metals at atmospheric pressure |
| 12/20/2001 | WO2000019481A3 Low contamination high density plasma processing chamber and methods for processing a semiconductor substrate |
| 12/20/2001 | US20010053615 Ammonia activation gas is delivered into a reactor at the same time as trimethylaluminum and using methanol, ethanol or isopropanol as oxygen source instead of water vapor |
| 12/20/2001 | US20010053614 Semiconductor device and method of manufacturing the same |
| 12/20/2001 | US20010053603 Method of manufacturing a copper metal wiring in a semiconductor device |
| 12/20/2001 | US20010053587 Apparatus for supplying a liquid raw material and method of manufacturing a copper layer using the same |
| 12/20/2001 | US20010053558 Oxidizing in the presence of an organometallic catalyst using chemical vapor deposition; for use in dynamic random access memory devices; integrated circuits; semiconductors |
| 12/20/2001 | US20010053423 Improvement includes a second process gas distributor having a second process gas exit spaced apart from the substrate support, and an oxygen-supplying gas distributor have a third exit spaced above the substrate support |
| 12/20/2001 | US20010053422 Diamond film depositing apparatus and method thereof |
| 12/20/2001 | US20010053412 Method of curing hydrophobic coating with DLC & FAS on substrate, and resulting coated article |
| 12/20/2001 | US20010052596 Semiconducting devices and method of making thereof |
| 12/20/2001 | US20010052556 Injector |
| 12/20/2001 | US20010052393 Vacuum processing apparatus |
| 12/20/2001 | US20010052359 Method of substrate temperature control and method of assessing substrate temperature controllability |
| 12/20/2001 | US20010052325 Substrate processing apparatus |
| 12/20/2001 | US20010052324 Device for producing and processing semiconductor substrates |
| 12/20/2001 | US20010052323 Method and apparatus for forming material layers from atomic gasses |
| 12/20/2001 | US20010052322 Plasma process device |
| 12/20/2001 | US20010052321 Single-substrate-processing apparatus for semiconductor |
| 12/20/2001 | US20010052319 Plasma processing apparatus and plasma processing method |
| 12/20/2001 | US20010052316 Apparatus for reduced-pressure epitaxial growth and method of controlling the apparatus |
| 12/20/2001 | EP1145273A3 Low contamination high density plasma etch chambers and methods for making the same |
| 12/20/2001 | DE10120295A1 Vapor deposition apparatus for producing stacked layer structure, includes first and second run lines, vent lines, and line-switching mechanism |
| 12/20/2001 | DE10119049A1 Thermische Bearbeitungseinrichtung und thermisches Bearbeitungsverfahren Thermal processing device and thermal processing method |
| 12/20/2001 | DE10028792A1 Messer Knife |
| 12/19/2001 | EP1164632A2 Method of forming a fluoro-organosilicate layer on a substrate |
| 12/19/2001 | EP1164628A2 Processing system and method |
| 12/19/2001 | EP1164620A2 Plasma display panel suitable for high-quality display and production method |
| 12/19/2001 | EP1164388A2 Device with optical layers |
| 12/19/2001 | EP1164206A2 Chemical vapor deposition method for amorphous silicon and resulting film |
| 12/19/2001 | EP1163544A1 Ultraviolet filters with enhanced weatherability and method of making |
| 12/19/2001 | EP1034320B1 Method and apparatus for coating diamond-like carbon onto particles |
| 12/19/2001 | EP0960435A4 Apparatus and methods for minimizing as-deposited stress in tungsten silicide films |
| 12/19/2001 | CN1327612A Semiconductor processing equipment having tiled ceramic liner |
| 12/19/2001 | CN1327490A Reaction chamber for an epitaxial reactor |
| 12/19/2001 | CN1327486A Apparatus for forming thin film |
| 12/19/2001 | CN1327434A Method for the production of single isotope silicon Si-28 |
| 12/19/2001 | CN1327259A Low resistant tungsten silicide rigidly adhesive to low layer and semiconductor device using it |
| 12/19/2001 | CN1327084A Method for preparing wire drawing mold with diamond compoiste coating |
| 12/19/2001 | CN1327082A Computer control device for vacuum coating |
| 12/19/2001 | CN1076518C Plasma treating device |
| 12/18/2001 | US6331697 System and method for rapid thermal processing |
| 12/18/2001 | US6331494 Deposition of low dielectric constant thin film without use of an oxidizer |
| 12/18/2001 | US6331485 Electron cyclotron resonance plasma/chemical vapor deposition of titanium, zirconium or hafnium by reducing halide; conformally covering; noncracking; forming barrier layer; filling with electroconductive material |
| 12/18/2001 | US6331483 Method of film-forming of tungsten |
| 12/18/2001 | US6331330 Pressure feeding precursor solvent and a ph-modifying catalyst, generating electric providing corona spray of droplets, electrostatically guiding towards the substrate, decreasing temperature gradient, evaporating from solvent, |
| 12/18/2001 | US6331260 VD process and apparatus for producing stand-alone thin films |
| 12/18/2001 | US6331212 Methods and apparatus for thermally processing wafers |
| 12/18/2001 | US6331211 Method and apparatus for forming low dielectric constant polymeric films |
| 12/18/2001 | US6331209 Method of forming carbon nanotubes |
| 12/18/2001 | US6331095 Transportation system and processing apparatus employing the transportation system |
| 12/18/2001 | CA2091711C Method for producing glass thin film |
| 12/13/2001 | WO2001095376A2 Methods for forming rough ruthenium-containing layers and structures/methods using same |
| 12/13/2001 | WO2001094662A1 Method for preparing a coating on a substrate by ald process using a deuterized reactant |
| 12/13/2001 | WO2001094661A1 A method of growing a zno film |
| 12/13/2001 | WO2001094657A2 Bearing with amorphous boron carbide coating |
| 12/13/2001 | WO2001094448A2 Barrier layer for polymers and containers |
| 12/13/2001 | WO2001048263A3 Method for producing a layer which influences the orientation of liquid crystal and a liquid crystal cell which has at least one layer of this type |
| 12/13/2001 | WO2001041942A3 Method for depositing a coating on the wall of metallic containers |
| 12/13/2001 | WO2001040535A3 System and method relating to vapor deposition |
| 12/13/2001 | WO2001032359A3 Ultrasonic metal finishing involving cavitational erosion |
| 12/13/2001 | US20010051499 Substrate rotating apparatus |
| 12/13/2001 | US20010051447 Semiconductor device, semiconductor wafer, and methods of producing the same device and wafer |
| 12/13/2001 | US20010051445 Semiconductor device and method of manufacturing the same |
| 12/13/2001 | US20010051444 Method for manufacturing aluminum oxide film for use in semiconductor device |
| 12/13/2001 | US20010051435 Chemical-organic planarization process for atomically smooth interfaces |
| 12/13/2001 | US20010051429 High vacuum apparatus for fabricating semiconductor device and method for forming epitaxial layer using the same |
| 12/13/2001 | US20010051428 Low-resistive tungsten silicide layer strongly adhered to lower layer and semiconductor device using the same |
| 12/13/2001 | US20010051289 Anti-corrosion ceramic member |
| 12/13/2001 | US20010051232 Plasma processing method |
| 12/13/2001 | US20010051231 Method for improving electrical conductivity of metals, metal alloys and metal oxides |
| 12/13/2001 | US20010051228 Method of forming interlayer insulating film |
| 12/13/2001 | US20010051216 Corrosion resistant coating |
| 12/13/2001 | US20010051215 Silicon titanium nitrides formed by reacting titanium halide such as titanium tetraiodide, a vapor phase silicon compound and a reactive nitrogen gas such as ammonia in presence of the substrate at given temperature range until nitride forms |
| 12/13/2001 | US20010051214 Includes two manifolds capable of separating, so it is easy to separate the second manifold supporting the inner tube from the first manifold supporting the outer tube; inner tube can be exchanged without cooling for cleaning |
| 12/13/2001 | US20010051081 Processes for vacuum treating workpieces, and corresponding process equipment |
| 12/13/2001 | US20010050391 Liquid chemical vapor deposition source material including at least one organometallic compound of platinum group metal dissolved in tetrahydrofuran and having moisture content of not more than 200 ppm |
| 12/13/2001 | US20010050146 Substrate processing apparatus and substrate processing method |