Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
01/2002
01/10/2002WO2002003440A1 Method for predicting consumption of consumable part, method for predicting deposited-film thickness, and plasma processor
01/10/2002WO2002003427A2 Semiconductor processing equipment having improved particle performance
01/10/2002WO2002003415A2 Switched uniformity control
01/10/2002WO2002002843A2 Carbide coated steel articles and method of making them
01/10/2002WO2002002842A2 Low temperature cvd bst deposition
01/10/2002WO2002002574A1 Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives
01/10/2002WO2000048435A9 Method of plasma enhanced chemical vapor deposition of diamond
01/10/2002US20020004444 Vapor deposition; self-supporting
01/10/2002US20020004309 Processes used in an inductively coupled plasma reactor
01/10/2002US20020004298 Method of forming interlayer insulating film
01/10/2002US20020004272 Multiple step methods for forming comformal layers
01/10/2002US20020004167 Device enclosures and devices with integrated battery
01/10/2002US20020004149 Magnetic recording medium, magnetic recording medium manufacture method, and information regeneration apparatus
01/10/2002US20020004139 Vapor deposition; overcoating semiconductor substrate
01/10/2002US20020003664 Optical filter construction by atomic layer control for next generation dense wavelength division multiplexer
01/10/2002US20020003239 Semiconductor structure and device including a carbon film and method of forming the same
01/10/2002US20020003238 Structure including cubic boron nitride films and method of forming the same
01/10/2002US20020002981 Utilizing the surface as an electrode to form a plasma, which removes a portion of the deposit
01/10/2002US20020002951 Heating installation for a reactor
01/10/2002US20020002950 Wafer processing apparatus
01/10/2002US20020002949 PCVD apparatus and a method of manufacturing an optical fiber, a preform rod and a jacket tube as well as the optical fiber manufactured therewith
01/10/2002US20020002948 Plasma processing apparatus having an evacuating arrangement to evacuate gas from a gas-introducing part of a process chamber
01/10/2002US20020002947 Inductive coupling plasma processing apparatus
01/10/2002DE10130942A1 Magnetic plate production comprises depositing a first carbon layer containing predominantly SP3-carbon on the plate, and depositing a second carbon layer containing less SP3-carbon
01/10/2002DE10031577A1 Kondensator für ein Halbleiterpeicherbauelement und Verfahren zu dessen Herstellung A capacitor for Halbleiterpeicherbauelement and process for its preparation
01/10/2002DE10029523A1 Verfahren und Vorrichtung zum Reinigen eines PVD- oder CVD-Reaktors sowie von Abgasleitungen desselben The same process and apparatus for cleaning a PVD or CVD reactor and exhaust gas lines
01/09/2002EP1170784A1 Semiconductor device and its production method
01/09/2002EP1170398A1 Cutting tool and its fabrication method
01/09/2002EP1170397A2 Deposition of amorphous silicon films by high density plasma CVD at low temperatures
01/09/2002EP1170251A1 Compositions for forming metal oxide films
01/09/2002EP1169490A1 Vacuum processing apparatus
01/09/2002EP1169489A1 Method and getter devices for use in deposition of thin layers
01/09/2002EP1027169B1 Method for corrosion-resistant coating of metal substrates by means of plasma polymerisation
01/09/2002EP0956376B1 A susceptor for a device for epitaxially growing objects and such a device
01/09/2002EP0839218B1 Method for forming tin oxide coating on glass
01/09/2002CN1330753A Burner manifold apparatus for use in chemical vapor deposition process
01/09/2002CN1330507A Radio frequency plasma generator
01/09/2002CN1330412A Vertical nanometer size transistor using carbon monometer tube and manufacturing method thereof
01/09/2002CN1330397A Method and device for manufacturing active matrix device containing top grid type TFT
01/09/2002CN1330392A Forming method for silicon based film, silicon based film and photoelectric element
01/09/2002CN1330262A Microtome
01/09/2002CN1330169A Nozzle plate unit for supplying fluid after dispersed and manfacturing method thereof
01/09/2002CN1077608C Method for growing high-oriented BCN nanometer tube material
01/09/2002CN1077607C Method and device for GaN growth by light radiation-heated metallic organic chemical gas-state deposition
01/08/2002US6337518 Integrated circuit interconnect structure comprising substrate with electroconductive layer, layer of non-fluorinated diamond-like carbon, graded layer, layer of amorphous fluorinated carbon, electroconductive layer, metal connector
01/08/2002US6337292 Vapor deposition of silicon oxide layer
01/08/2002US6337290 Semiconductor device having fluorine-added carbon dielectric film and method of fabricating the same
01/08/2002US6337289 Method and apparatus for integrating a metal nitride film in a semiconductor device
01/08/2002US6337276 Methods of forming a copper wiring in a semiconductor device using chemical vapor deposition
01/08/2002US6337148 Copper source reagent compositions, and method of making and using same for microelectronic device structures
01/08/2002US6337110 Heating substrate; creating plasma from ionized, gaseous mixture, for a magnetic field value corresponding to electron cyclotron resonance of organic molecules, creating a positive potential difference between plasma and substrate, diffusing
01/08/2002US6337102 Low pressure vapor phase deposition of organic thin films
01/08/2002US6337000 Removing cobalt from cemented carbide alloy by etching, forming intermediate layer bt sputtering, disposing guide bush, forming diamond-like carbon film alloy
01/08/2002US6336975 Thin film forming equipment and method
01/08/2002US6336423 Apparatus for forming a deposited film by plasma chemical vapor deposition
01/08/2002CA2218317C Vapour phase chemical infiltration process for densifying porous substrates disposed in annular stacks
01/03/2002WO2002001648A1 Semiconductor structure, device, circuit, and process
01/03/2002WO2002001628A2 Formation of boride barrier layers using chemisorption techniques
01/03/2002WO2002001622A2 Novel non-crystalline oxides for use in microelectronic, optical, and other applications
01/03/2002WO2002001615A2 Crystal structure control of polycrystalline silicon in a single wafer chamber
01/03/2002WO2002001608A2 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
01/03/2002WO2002000971A1 Silicon epitaxial wafer manufacturing method and silicon epitaxial wafer
01/03/2002WO2002000968A1 A method for manufacturing a susceptor, a susceptor thus obtained and its application
01/03/2002WO2002000963A1 Selective beam deposition
01/03/2002WO2002000962A1 System and method for in-situ cleaning of process monitor of semi-conductor wafer fabricator
01/03/2002WO2002000961A1 Method for producing a multi-functional, multi-ply layer on a transparent plastic substrate and a multi-functional multi-ply layer produced according to said method
01/03/2002US20020001976 Chamber for constructing a film on a semiconductor wafer
01/03/2002US20020001974 Atomic layer deposition (ALD) using zirconium tetra-tert-butoxide as a zirconium source material instead of conventional ZrCl4, so resulting film is chlorine-free
01/03/2002US20020001971 Made by exposing an insulation layer that includes oxygen to a metal precursor reactive with oxygen to produce a first metal oxide layer on the insulation layer
01/03/2002US20020001969 Method of forming an Al2O3 film in a semiconductor device
01/03/2002US20020001953 Method and system for semiconductor crystal production with temperature management
01/03/2002US20020001948 Method of manufacturing a semiconductor device
01/03/2002US20020001929 Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
01/03/2002US20020001928 Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature
01/03/2002US20020001924 Production process of semiconductor layer, fabrication process of photovoltaic cell and production apparatus of semiconductor layer
01/03/2002US20020001905 Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
01/03/2002US20020001890 Method for forming semiconductor device having epitaxial channel layer using laser treatment
01/03/2002US20020001778 Photolithography scheme using a silicon containing resist
01/03/2002US20020001747 Solid state electronics
01/03/2002US20020001746 Low-temperature fabrication of thin-film energy-storage devices
01/03/2002US20020001725 Low refractive index sio2 film and process for producing the same
01/03/2002US20020001717 Diamond coated tool and method of manufacturing the diamond coated tool
01/03/2002US20020001674 Vaporization, transportation; using an ionic solvent
01/03/2002US20020001164 Method for manufacturing capacitor in semiconductor device and the capacitor
01/03/2002US20020000670 A low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds
01/03/2002US20020000667 Method of manufacturing an insulation film in a semiconductor device
01/03/2002US20020000664 Silicon nitride composite hdp/cvd process
01/03/2002US20020000662 Chemical vapor deposition of titanium
01/03/2002US20020000661 Method for fabricating metal wiring and the metal wiring
01/03/2002US20020000653 Method for forming an aluminum contact
01/03/2002US20020000644 Insulating layer, semiconductor device and methods for fabricating the same
01/03/2002US20020000598 Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors
01/03/2002US20020000591 Continuous good step coverage cvd platinum metal deposition
01/03/2002US20020000587 Method for forming capacitor of nonvolatile semiconductor memory device and the capacitor
01/03/2002US20020000584 Semiconductor structure and device including a monocrystalline conducting layer and method for fabricating the same
01/03/2002US20020000556 Hexagonal boron nitride film with low dielectric constant, layer dielectric film and method of production thereof, and plasma CVD apparatus
01/03/2002US20020000263 Reducing alkylmetal to the metal and alkane, then reaction with titanium tetrachloride which deposits titanium which can further be annealed to form titanium silicide; low resistance contacts
01/03/2002US20020000247 Pressure control valve having enhanced durability
01/03/2002US20020000203 Multi-thermal zone shielding apparatus
01/03/2002US20020000202 Remote plasma apparatus for processing sustrate with two types of gases