Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
01/2002
01/03/2002US20020000201 Plasma chemical vapor deposition apparatus
01/03/2002US20020000200 Chemical vapor deposition apparatus
01/03/2002US20020000199 Film forming apparatus and method for producing tungsten nitride film
01/03/2002US20020000198 The dome: shape and temperature controlled surfaces
01/03/2002US20020000197 Vacuum processing apparatus and multi-chamber vacuum processing apparatus
01/03/2002US20020000196 Reactor for depositing thin film on wafer
01/03/2002US20020000195 Concentration profile on demand gas delivery system (individual divert delivery system)
01/03/2002US20020000175 New complex of an element of transition group IV or V for forming an improved precursor combination
01/03/2002US20020000034 Continuous processing of thin-film batteries and like devices
01/03/2002DE10029905A1 Reflektor, insbesondere zur Anwendung bei einem Kraftfahrzeug Reflector, in particular for use in a motor vehicle
01/03/2002DE10024573C1 Apparatus for coating substrates in a plasma CVD coating process has metallic electrically conducting elements with a predetermined electrical potential arranged in the dark chamber between the substrate and the plasma
01/02/2002EP1168427A1 Method of plasma depositing silicon nitride
01/02/2002EP1168426A2 Method of plasma depositing a low dielectric constant insulating film
01/02/2002EP1168420A2 Nozzle plate member for supplying fluids in dispersed manner and manufacturing method of the same
01/02/2002EP1168415A2 Power supply antenna and power supply method
01/02/2002EP1167573A1 Substrate support for a semiconductor processing chamber
01/02/2002EP1167572A2 Lid assembly for a semiconductor processing chamber
01/02/2002EP1167571A2 Showerhead for semiconductor processing chamber
01/02/2002EP1167570A1 Reactor for depositing thin film
01/02/2002EP1167569A1 Apparatus and method for depositing thin film on wafer using atomic layer deposition
01/02/2002EP1167568A1 Heat treatment apparatus and cleaning method of the same
01/02/2002EP1167567A1 Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
01/02/2002EP1167485A1 CVD titanium-boron or chromium-boron coating of diamond
01/02/2002EP1167291A1 Hexagonal boron nitride film with low dielectric constant, layer dielectric film and method of production thereof, and plasma CVD apparatus
01/02/2002EP1166900A2 Multiple contents container assembly for ultrapure solvent purging
01/02/2002EP1166324A2 Apparatus for improving plasma distribution and performance in an inductively coupled plasma
01/02/2002EP1166323A1 Method and apparatus for compensating non-uniform wafer processing in plasma processing
01/02/2002EP1166180A1 Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
01/02/2002EP1165860A1 Diamond-coated tool and process for producing thereof
01/02/2002EP1165856A1 Method of making a multilayer article by arc plasma deposition
01/02/2002EP1165855A1 Method for treating polymer surface
01/02/2002EP1028798B1 Gas purification system with safety device and method for purifying gases
01/02/2002EP0963455B1 A coating comprising layers of diamond like carbon and diamond like nanocomposite compositions
01/02/2002EP0958195B1 Method for coating surfaces using an installation with sputter electrodes
01/02/2002EP0954620A4 Vapor deposition components and corresponding methods
01/02/2002CN1328888A Direct quick precision metal type forming method based on liquid thermochemical reaction
01/01/2002US6335288 Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
01/01/2002US6335281 Deposited film forming process
01/01/2002US6335277 Method for forming metal nitride film
01/01/2002US6335268 Plasma immersion ion processor for fabricating semiconductor integrated circuits
01/01/2002US6335263 Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
01/01/2002US6335261 Directional CVD process with optimized etchback
01/01/2002US6335232 Method of manufacturing a thin film transistor
01/01/2002US6335105 For forming part for a gas turbine engine, heat resistance
01/01/2002US6335054 Air lock for introducing substrates to and/or removing them from a treatment chamber
01/01/2002US6335049 Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor
01/01/2002US6334983 Processing system
01/01/2002US6334928 Semiconductor processing system and method of using the same
01/01/2002US6334907 Method of controlling thickness and aluminum content of a diffusion aluminide coating
01/01/2002US6334404 Method and apparatus for reducing particle contamination on wafers
01/01/2002US6334249 Cavity-filling method for reducing surface topography and roughness
01/01/2002CA2134290C Process for depositing a thin layer on the surface of a plastic material substrate
12/2001
12/31/2001WO2001094291A1 Self-reducible copper(ii) source reagents for chemical vapor deposition of copper metal
12/31/2001CA2419837A1 Self-reducible copper(ii) source reagents for chemical vapor deposition of copper metal
12/27/2001WO2001099171A1 Gas supply device and treating device
12/27/2001WO2001099166A1 Thin film forming method
12/27/2001WO2001099165A1 Method for forming thin film and apparatus for forming thin film
12/27/2001WO2001099145A1 A method for fault identification in a plasma process
12/27/2001WO2001098556A2 Temperature controlled gas feedthrough
12/27/2001WO2001098555A1 Method and device for cleaning a pvd or cvd reactor and waste-gas lines of the same
12/27/2001US20010055889 Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers
12/27/2001US20010055888 Semiconductor vacuum deposition system and method having a reel-to-reel substrate cassette
12/27/2001US20010055877 Methods, complexes, and systems for forming metal-containing films on semiconductor structures
12/27/2001US20010055875 Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer
12/27/2001US20010055869 Oxidation using organometallic compound as catalyst
12/27/2001US20010055824 Oxidation rate of the thermal oxidation is reduced and the growth of the oxide layer on the silicon surface is inhibited. The thickness of the oxide layer is thus used as a measure for the nitrogen content.
12/27/2001US20010055821 Vapor deposition
12/27/2001US20010055775 Generating preferential layouts; mix particles, allow particle to form layout, recover layout
12/27/2001US20010055738 Heat treatment apparatus and cleaning method of the same
12/27/2001US20010055672 Low dielectric constant materials and processes
12/27/2001US20010055669 Magnetoresistive cobalt oxide mixture
12/27/2001US20010055654 Method and apparatus for the deposition of metal nanoclusters and films on a substrate
12/27/2001US20010055650 Apparatus and method for selectively coating internal and external surfaces of an airfoil
12/27/2001US20010055649 Coating, modification and etching of substrate surface with particle beam irradiation of the same
12/27/2001US20010054769 Protective layers prior to alternating layer deposition
12/27/2001US20010054765 Semiconductor device and method and apparatus for manufacturing the same
12/27/2001US20010054749 Method for filling depressions in a surface of a semiconductor structure, and a semiconductor structure filled in this way
12/27/2001US20010054601 Etchant and polymer precursor species contain fluorine (especially CHF3 AND CH2F2), and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material
12/27/2001US20010054484 Plasma processor, cluster tool, and method of controlling plasma
12/27/2001US20010054483 Thermal control apparatus for inductively coupled rf plasma reactor having an overhead solenoidal antenna
12/27/2001US20010054430 Method of cleaning a film deposition apparatus, method of dry etching a film deposition apparatus, and an article production method including a process based on the cleaning or dry etching method
12/27/2001US20010054391 Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
12/27/2001US20010054390 Wafer support system
12/27/2001US20010054389 Electro-static chucking mechanism and surface processing apparatus
12/27/2001US20010054388 Single-substrate-film-forming method and single-substrate-heat-processing apparatus
12/27/2001US20010054386 Oxidation processing unit
12/27/2001US20010054385 Single-substrate-processing apparatus for semiconductor process
12/27/2001US20010054382 Chemical vapor deposition system
12/27/2001US20010054381 High temperature chemical vapor deposition chamber
12/27/2001US20010054379 Film or coating deposition on a substrate
12/27/2001US20010054377 Method of growing a thin film onto a substrate
12/26/2001CN1328562A Complex compound of element of sub-group IV
12/26/2001CN1328344A Substrate of silicon structure on insulating layer using alumina as buried layer and its preparing process
12/26/2001CN1328172A Non-crystalline hard carbon film, mechanical part and method for producing non-crystalline hard carbon film
12/26/2001CN1076864C Laser process
12/25/2001US6333601 Planar gas introducing unit of a CCP reactor
12/25/2001US6333269 Plasma treatment system and method
12/25/2001US6333266 Manufacturing process for a semiconductor device
12/25/2001US6333246 Semiconductor device manufacturing method using electrostatic chuck and semiconductor device manufacturing system
12/25/2001US6333130 Method and apparatus for correcting defects in photomask