Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
02/2002
02/05/2002US6344420 Plasma processing method and plasma processing apparatus
02/05/2002US6344416 Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small productions
02/05/2002US6344387 Wafer boat and film formation method
02/05/2002US6344363 Method of making ferroelectric film with protective cover film against hydrogen and moisture
02/05/2002US6344265 Coated cutting insert
02/05/2002US6344232 Computer controlled temperature and oxygen maintenance for fiber coating CVD
02/05/2002US6344149 Polycrystalline diamond member and method of making the same
02/05/2002US6344115 Pattern forming method using charged particle beam process and charged particle beam processing system
02/05/2002US6344079 Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition
02/05/2002US6343565 Flat antenna having rounded slot openings and plasma processing apparatus using the flat antenna
01/2002
01/31/2002WO2002009172A1 Workpiece holding mechanism
01/31/2002WO2002009166A1 Method for manufacturing semiconductor device, substrate treater, and substrate treatment system
01/31/2002WO2002009162A2 Heated substrate support assembly and method
01/31/2002WO2002009155A2 Wafer chuck having with interleaved heating and cooling elements
01/31/2002WO2002008489A2 Emissivity-change-free pumping plate kit in a single wafer chamber
01/31/2002WO2002008488A1 Method of growing a thin film onto a substrate
01/31/2002WO2002008487A1 Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
01/31/2002WO2002008485A2 Method for vapour deposition of a film onto a substrate
01/31/2002WO2002007966A1 Reduced grain boundary crystalline thin films
01/31/2002WO2001072377A3 Treatment of hazardous gases in effluent
01/31/2002WO2001069131A3 Chamber cleaning mechanism
01/31/2002WO2000019481A9 Low contamination high density plasma processing chamber and methods for processing a semiconductor substrate
01/31/2002US20020013487 Using organometallic compound; vapor deposition
01/31/2002US20020013068 Vapor deposition using diluent gas
01/31/2002US20020013066 Semiconductor device and semiconductor device manufacturing method
01/31/2002US20020013060 Semiconductor device and method of manufacturing the same
01/31/2002US20020013052 Methods for preparing ruthenium metal films
01/31/2002US20020013051 CVD of tantalum and tantalum nitride films from tantalum halide precursors
01/31/2002US20020013050 Chemistry for chemical vapor deposition of titanium containing films
01/31/2002US20020013046 Multilayer dielectric
01/31/2002US20020013041 Process control; controlling temperature
01/31/2002US20020013038 Semiconductor device and production thereof
01/31/2002US20020012876 Lithography structure
01/31/2002US20020012819 Reaction product of organozirconium compound and diketone compound
01/31/2002US20020012818 Coated body with nanocrystalline CVD coating for enhanced edge toughness and reduced friction
01/31/2002US20020012798 Highly tetrahedral amorphous carbon coating on glass
01/31/2002US20020012756 Plasma coating; uniformity
01/31/2002US20020012749 Method and apparatus for coating and/or treating substrates
01/31/2002US20020012581 Substrate processing apparatus and method for manufacturing a semiconductor device
01/31/2002US20020011672 Semiconductor device and semiconductor device manufacturing method
01/31/2002US20020011620 Capacitor having a TaON dielectric film in a semiconductor device and a method for manufacturing the same
01/31/2002US20020011478 Hot wall rapid thermal processor
01/31/2002US20020011465 Etching metal oxide film by supplying first etching gas to film to remove metallic element from film, supplying second etching gas to film to remove secong metallic element
01/31/2002US20020011463 Isotropic dry cleaning process for noble metal integrated circuit structures
01/31/2002US20020011310 Downstream sapphire elbow joint for remote plasma generator
01/31/2002US20020011268 Modular gas panel closet for a semiconductor wafer processing platform
01/31/2002US20020011216 Integral susceptor-wall reactor system and method
01/31/2002US20020011215 Plasma treatment apparatus and method of manufacturing optical parts using the same
01/31/2002US20020011214 Remote plasma mixer
01/31/2002US20020011213 Formed under plasma conditions in which high and low frequency rf power is employed to generate the plasma.
01/31/2002US20020011212 Plasma cvd apparatus
01/31/2002US20020011211 Barrier coating for vitreous materials
01/31/2002US20020011210 Semiconductor-processing device provided with a remote plasma source for self-cleaning
01/31/2002US20020011204 Shell and tube heat exchangers
01/31/2002US20020011201 Controlled source for material processing
01/31/2002DE10035507A1 Verfahren zur Verminderung von Knarzgeräuschen zwischen Bauteilen A process for the reduction of creaking noises between components
01/31/2002DE10010016C1 Vorrichtung und Verfahren zur plasmagestützten Oberflächenbehandlung von Substraten im Vakuum Apparatus and method for plasma-enhanced surface treatment of substrates in vacuum
01/30/2002EP1176226A1 Method of deposition of silicon carbide film in integrated circuit fabrication
01/30/2002EP1176120A1 Process for purifying ammonia
01/30/2002EP1175949A1 Coated cemented carbide
01/30/2002EP1175695A1 Plasma polymerizing apparatus having an electrode with a lot of uniform edges
01/30/2002EP1175694A2 Semiconductor devices with selectively doped iii-v nitride layers
01/30/2002EP1116225A4 Hard disk vapor lube
01/30/2002CN1333575A Method for preparing negative pole of lithium secondary cell
01/30/2002CN1333574A Alkali metal film element and making method thereof
01/29/2002US6343183 Wafer support system
01/29/2002US6342453 Method for CVD process control for enhancing device performance
01/29/2002US6342445 Multistep deposition process for the separate control of the ru reagent, relative to the sr reagent, which requires a much lower temperature, ru reagent gas is supplied by a bubbler, following the deposition of the ru reagent the sr liquid
01/29/2002US6342405 Growing thin layers in sequences that result in the overall lattice match and bandgap desired; varying concentration of the elements varies the bandgaps; for lasers that emit light in the blue, short wavelength region; desorption of the group
01/29/2002US6342291 Coated grooving or parting insert and method of making same
01/29/2002US6342277 Sequential chemical vapor deposition
01/29/2002US6342275 Method and apparatus for atmospheric pressure plasma surface treatment, method of manufacturing semiconductor device, and method of manufacturing ink jet printing head
01/29/2002US6341574 Plasma processing systems
01/29/2002CA2054805C Enhanced silicon nitride thin layers
01/24/2002WO2002007212A1 Holding device for treated body
01/24/2002WO2002007204A1 Method and apparatus for manufacturing semiconductor device
01/24/2002WO2002007197A1 Adapter, chamber, and plasma processing device
01/24/2002WO2002007194A2 Cleaning gas for semiconductor production equipment
01/24/2002WO2002007193A1 Method for heating a semiconductor wafer in a process chamber, and process chamber
01/24/2002WO2002006560A1 Graded material and method for synthesis thereof and method for processing thereof
01/24/2002WO2002006559A1 Method for making carbon films capable of emitting electrons, by chemical vapour deposition
01/24/2002WO2002006554A1 Deposition of carbon and carbon-based materials
01/24/2002WO2002006174A1 Hydrophobic coating with dlc and fas on substrate
01/24/2002WO2002005969A2 Apparatus and method for synthesizing films and coatings by focused particle beam deposition
01/24/2002WO2001083847A3 Method of making dielectric films
01/24/2002WO2001077406A3 A method of determining the end point of a plasma cleaning operation
01/24/2002WO2001071056A3 Nickel vapour deposition manufacture of aircraft engine parts
01/24/2002WO2001066819A3 Methods for preparing ruthenium metal films
01/24/2002US20020009896 Chemical vapor deposition using organometallic precursors
01/24/2002US20020009892 Plasma preclean with argon, helium, and hydrogen gases
01/24/2002US20020009888 Method of producing a semiconductor device
01/24/2002US20020009884 Method of forming a metal wiring in a semiconductor device
01/24/2002US20020009872 Fabrication process of a semiconductor device including a CVD process of a metal film
01/24/2002US20020009868 Method of growing a thin film in gaseous phase and apparatus for growing a thin film in gaseous phase for use in said method
01/24/2002US20020009864 Methods, complexes, and system for forming metal-containing films
01/24/2002US20020009861 Oxidation, heating, annealing
01/24/2002US20020009848 Methods of forming dielectric layers and methods of forming capacitors
01/24/2002US20020009637 Graphite nanofibers, electron-emitting source and method for preparing the same, display element equipped with the electron-emitting source as well as lithium ion secondary battery
01/24/2002US20020009604 Plasma-deposited coatings, devices and methods
01/24/2002US20020009546 Method and apparatus for deposited film