Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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02/05/2002 | US6344420 Plasma processing method and plasma processing apparatus |
02/05/2002 | US6344416 Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small productions |
02/05/2002 | US6344387 Wafer boat and film formation method |
02/05/2002 | US6344363 Method of making ferroelectric film with protective cover film against hydrogen and moisture |
02/05/2002 | US6344265 Coated cutting insert |
02/05/2002 | US6344232 Computer controlled temperature and oxygen maintenance for fiber coating CVD |
02/05/2002 | US6344149 Polycrystalline diamond member and method of making the same |
02/05/2002 | US6344115 Pattern forming method using charged particle beam process and charged particle beam processing system |
02/05/2002 | US6344079 Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition |
02/05/2002 | US6343565 Flat antenna having rounded slot openings and plasma processing apparatus using the flat antenna |
01/31/2002 | WO2002009172A1 Workpiece holding mechanism |
01/31/2002 | WO2002009166A1 Method for manufacturing semiconductor device, substrate treater, and substrate treatment system |
01/31/2002 | WO2002009162A2 Heated substrate support assembly and method |
01/31/2002 | WO2002009155A2 Wafer chuck having with interleaved heating and cooling elements |
01/31/2002 | WO2002008489A2 Emissivity-change-free pumping plate kit in a single wafer chamber |
01/31/2002 | WO2002008488A1 Method of growing a thin film onto a substrate |
01/31/2002 | WO2002008487A1 Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation |
01/31/2002 | WO2002008485A2 Method for vapour deposition of a film onto a substrate |
01/31/2002 | WO2002007966A1 Reduced grain boundary crystalline thin films |
01/31/2002 | WO2001072377A3 Treatment of hazardous gases in effluent |
01/31/2002 | WO2001069131A3 Chamber cleaning mechanism |
01/31/2002 | WO2000019481A9 Low contamination high density plasma processing chamber and methods for processing a semiconductor substrate |
01/31/2002 | US20020013487 Using organometallic compound; vapor deposition |
01/31/2002 | US20020013068 Vapor deposition using diluent gas |
01/31/2002 | US20020013066 Semiconductor device and semiconductor device manufacturing method |
01/31/2002 | US20020013060 Semiconductor device and method of manufacturing the same |
01/31/2002 | US20020013052 Methods for preparing ruthenium metal films |
01/31/2002 | US20020013051 CVD of tantalum and tantalum nitride films from tantalum halide precursors |
01/31/2002 | US20020013050 Chemistry for chemical vapor deposition of titanium containing films |
01/31/2002 | US20020013046 Multilayer dielectric |
01/31/2002 | US20020013041 Process control; controlling temperature |
01/31/2002 | US20020013038 Semiconductor device and production thereof |
01/31/2002 | US20020012876 Lithography structure |
01/31/2002 | US20020012819 Reaction product of organozirconium compound and diketone compound |
01/31/2002 | US20020012818 Coated body with nanocrystalline CVD coating for enhanced edge toughness and reduced friction |
01/31/2002 | US20020012798 Highly tetrahedral amorphous carbon coating on glass |
01/31/2002 | US20020012756 Plasma coating; uniformity |
01/31/2002 | US20020012749 Method and apparatus for coating and/or treating substrates |
01/31/2002 | US20020012581 Substrate processing apparatus and method for manufacturing a semiconductor device |
01/31/2002 | US20020011672 Semiconductor device and semiconductor device manufacturing method |
01/31/2002 | US20020011620 Capacitor having a TaON dielectric film in a semiconductor device and a method for manufacturing the same |
01/31/2002 | US20020011478 Hot wall rapid thermal processor |
01/31/2002 | US20020011465 Etching metal oxide film by supplying first etching gas to film to remove metallic element from film, supplying second etching gas to film to remove secong metallic element |
01/31/2002 | US20020011463 Isotropic dry cleaning process for noble metal integrated circuit structures |
01/31/2002 | US20020011310 Downstream sapphire elbow joint for remote plasma generator |
01/31/2002 | US20020011268 Modular gas panel closet for a semiconductor wafer processing platform |
01/31/2002 | US20020011216 Integral susceptor-wall reactor system and method |
01/31/2002 | US20020011215 Plasma treatment apparatus and method of manufacturing optical parts using the same |
01/31/2002 | US20020011214 Remote plasma mixer |
01/31/2002 | US20020011213 Formed under plasma conditions in which high and low frequency rf power is employed to generate the plasma. |
01/31/2002 | US20020011212 Plasma cvd apparatus |
01/31/2002 | US20020011211 Barrier coating for vitreous materials |
01/31/2002 | US20020011210 Semiconductor-processing device provided with a remote plasma source for self-cleaning |
01/31/2002 | US20020011204 Shell and tube heat exchangers |
01/31/2002 | US20020011201 Controlled source for material processing |
01/31/2002 | DE10035507A1 Verfahren zur Verminderung von Knarzgeräuschen zwischen Bauteilen A process for the reduction of creaking noises between components |
01/31/2002 | DE10010016C1 Vorrichtung und Verfahren zur plasmagestützten Oberflächenbehandlung von Substraten im Vakuum Apparatus and method for plasma-enhanced surface treatment of substrates in vacuum |
01/30/2002 | EP1176226A1 Method of deposition of silicon carbide film in integrated circuit fabrication |
01/30/2002 | EP1176120A1 Process for purifying ammonia |
01/30/2002 | EP1175949A1 Coated cemented carbide |
01/30/2002 | EP1175695A1 Plasma polymerizing apparatus having an electrode with a lot of uniform edges |
01/30/2002 | EP1175694A2 Semiconductor devices with selectively doped iii-v nitride layers |
01/30/2002 | EP1116225A4 Hard disk vapor lube |
01/30/2002 | CN1333575A Method for preparing negative pole of lithium secondary cell |
01/30/2002 | CN1333574A Alkali metal film element and making method thereof |
01/29/2002 | US6343183 Wafer support system |
01/29/2002 | US6342453 Method for CVD process control for enhancing device performance |
01/29/2002 | US6342445 Multistep deposition process for the separate control of the ru reagent, relative to the sr reagent, which requires a much lower temperature, ru reagent gas is supplied by a bubbler, following the deposition of the ru reagent the sr liquid |
01/29/2002 | US6342405 Growing thin layers in sequences that result in the overall lattice match and bandgap desired; varying concentration of the elements varies the bandgaps; for lasers that emit light in the blue, short wavelength region; desorption of the group |
01/29/2002 | US6342291 Coated grooving or parting insert and method of making same |
01/29/2002 | US6342277 Sequential chemical vapor deposition |
01/29/2002 | US6342275 Method and apparatus for atmospheric pressure plasma surface treatment, method of manufacturing semiconductor device, and method of manufacturing ink jet printing head |
01/29/2002 | US6341574 Plasma processing systems |
01/29/2002 | CA2054805C Enhanced silicon nitride thin layers |
01/24/2002 | WO2002007212A1 Holding device for treated body |
01/24/2002 | WO2002007204A1 Method and apparatus for manufacturing semiconductor device |
01/24/2002 | WO2002007197A1 Adapter, chamber, and plasma processing device |
01/24/2002 | WO2002007194A2 Cleaning gas for semiconductor production equipment |
01/24/2002 | WO2002007193A1 Method for heating a semiconductor wafer in a process chamber, and process chamber |
01/24/2002 | WO2002006560A1 Graded material and method for synthesis thereof and method for processing thereof |
01/24/2002 | WO2002006559A1 Method for making carbon films capable of emitting electrons, by chemical vapour deposition |
01/24/2002 | WO2002006554A1 Deposition of carbon and carbon-based materials |
01/24/2002 | WO2002006174A1 Hydrophobic coating with dlc and fas on substrate |
01/24/2002 | WO2002005969A2 Apparatus and method for synthesizing films and coatings by focused particle beam deposition |
01/24/2002 | WO2001083847A3 Method of making dielectric films |
01/24/2002 | WO2001077406A3 A method of determining the end point of a plasma cleaning operation |
01/24/2002 | WO2001071056A3 Nickel vapour deposition manufacture of aircraft engine parts |
01/24/2002 | WO2001066819A3 Methods for preparing ruthenium metal films |
01/24/2002 | US20020009896 Chemical vapor deposition using organometallic precursors |
01/24/2002 | US20020009892 Plasma preclean with argon, helium, and hydrogen gases |
01/24/2002 | US20020009888 Method of producing a semiconductor device |
01/24/2002 | US20020009884 Method of forming a metal wiring in a semiconductor device |
01/24/2002 | US20020009872 Fabrication process of a semiconductor device including a CVD process of a metal film |
01/24/2002 | US20020009868 Method of growing a thin film in gaseous phase and apparatus for growing a thin film in gaseous phase for use in said method |
01/24/2002 | US20020009864 Methods, complexes, and system for forming metal-containing films |
01/24/2002 | US20020009861 Oxidation, heating, annealing |
01/24/2002 | US20020009848 Methods of forming dielectric layers and methods of forming capacitors |
01/24/2002 | US20020009637 Graphite nanofibers, electron-emitting source and method for preparing the same, display element equipped with the electron-emitting source as well as lithium ion secondary battery |
01/24/2002 | US20020009604 Plasma-deposited coatings, devices and methods |
01/24/2002 | US20020009546 Method and apparatus for deposited film |