Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
01/2002
01/24/2002US20020009545 Method for vaporization of liquid organic feedstock and method for growth of insulation film
01/24/2002US20020009544 Adding to a solid precursor in a liquid bubbler apparatus a liquid chosen to have a vapor pressure of the precursor under opertating conditions and that the precursor is insoluble in; attaching said bubbler to reactor; nitride, metal coatings
01/24/2002US20020008801 Glass substrate assembly, semiconductor device and method of heat-treating glass substrate
01/24/2002US20020008297 Gate structure and method for manufacture thereof
01/24/2002US20020008270 Diffusion barrier layers and methods of forming same
01/24/2002US20020008265 Methods for producing a structured metal layer
01/24/2002US20020008245 Semiconductor devices with selectively doped iii-v nitride layers
01/24/2002US20020008234 Mixed-signal semiconductor structure, device including the structure, and methods of forming the device and the structure
01/24/2002US20020008099 Method and apparatus for reducing contamination in a wafer loadlock of a semiconductor wafer processing system
01/24/2002US20020008009 Spinning disk evaporator
01/24/2002US20020007914 Etching and cleaning apparatus
01/24/2002US20020007912 Coolant for plasma generator
01/24/2002US20020007802 Clog resistant injection valve
01/24/2002US20020007797 Heat lamps for zone heating
01/24/2002US20020007796 Filtered cathodic arc deposition method and apparatus
01/24/2002US20020007793 Plasma deposition device for forming thin film
01/24/2002US20020007792 Cathode with wide band gaps
01/24/2002US20020007790 Atomic layer deposition (ALD) thin film deposition equipment having cleaning apparatus and cleaning method
01/24/2002US20020007785 Semiconductor substrate support assembly having lobed o-rings therein
01/24/2002DE10033940A1 Epitaxial semiconductor layer formation method uses heating to pre-bake temperature before chemical vapor deposition at lower deposition temperature
01/24/2002DE10031280A1 Multifunktionale Mehrlagenschicht auf transparenten Kunststoffen und Verfahren zur ihrer Herstellung Multifunctional multilayer coating on transparent plastic materials and methods for their preparation
01/23/2002EP1174936A2 Thin alkali metal film member and method of producing the same
01/23/2002EP1174934A2 Method of producing negative electrode for lithium secondary cell
01/23/2002EP1174916A2 Semiconductor device and semiconductor device manufacturing method
01/23/2002EP1174915A2 Deposition of a silicon containing insulating thin film
01/23/2002EP1174914A2 Semiconductor device and semiconductor device manufacturing method
01/23/2002EP1174527A1 Atomic layer deposition (ALD) film deposition equipment and cleaning method
01/23/2002EP1174298A2 Method for noise reducing between components
01/23/2002EP1173632A1 Reaction chamber for an epitaxial reactor
01/23/2002CN1332268A Nanometer diamond film preparing apparatus
01/23/2002CN1332267A Method and device for deposition of high melting metal layer using continuous deposition technology
01/23/2002CN1078264C Synthesis method of crystalline phase carbonitride film by microwave plasma chemical gas-phase deposition
01/22/2002US6340843 Plasma CVD dielectric film and process for forming the same
01/22/2002US6340769 Structures with iridium reagents and heterocyclic lewis bases
01/22/2002US6340768 MOCVD precursors based on organometalloid ligands
01/22/2002US6340628 Providing a semiconductor substrate in chemical vapor deposition chamber; introducing a precursor gas, introducing carbon dioxide containing gas, heating to deposit dielectric layer
01/22/2002US6340622 Forming a lower electrode on a semiconductor substrate, depositing an amorphous tantalum oxynitride (taon) thin film over the lower electrode, and subjecting to thermal procedure to form dielectric film, forming upper electrode
01/22/2002US6340505 Forming hydrogenated carbon protective film on disk through a plasma chemical vapor deposition method using a reaction gas containing a hydrocarbon, supplying high-frequency power to electrodes, applying pulse direct-current bias to disk
01/22/2002US6340499 Method to increase gas residence time in a reactor
01/22/2002US6340435 Integrated low K dielectrics and etch stops
01/22/2002US6340393 Method for synthesizing n-type diamond having low resistance
01/22/2002US6340386 MOCVD of SBT using toluene based solvent system for precursor delivery
01/22/2002US6339997 Plasma processing apparatus
01/17/2002WO2002005339A1 Plasma processing apparatus
01/17/2002WO2002005338A1 Cleaning gas and etching gas
01/17/2002WO2002005329A2 Chemical vapor deposition of barrier layers
01/17/2002WO2002005321A2 Method to isolate multi zone heater from atmosphere
01/17/2002WO2002005308A2 A plasma reactor having a symmetric parallel conductor coil antenna
01/17/2002WO2002005296A1 Ultraviolet-transparent conductive film and process for producing the same
01/17/2002WO2002004697A1 Apparatus for performing at least one process on a substrate
01/17/2002WO2002004691A2 Systems and methods for remote plasma clean
01/17/2002US20020006766 Process for cleaning ceramic articles
01/17/2002US20020006739 Vapor deposition of titanium nbitride and tantalum oxide
01/17/2002US20020006724 Composite friction elements for brakes and clutches; uniform array of predominately glass strands of reinforcing fibers, in a matrix of phenolic resin material
01/17/2002US20020006708 Forming sacrificial metal layer; replacement
01/17/2002US20020006689 Thin film semiconductor device and method for producing the same
01/17/2002US20020006680 Hot plate and method of manufacturing semiconductor device
01/17/2002US20020006525 Chemical vapor deposition of titanium
01/17/2002US20020006487 Transmission barrier layer for polymers and containers
01/17/2002US20020006478 Separating a plasma generating region from a deposition region wherein oxygen atoms are formed within plasma while silicon atoms are supplied at controlled rate to depostion region; vapor deposition; semiconductors
01/17/2002US20020006477 Exhaust processing method, plasma processing method and plasma processing apparatus
01/17/2002US20020006476 Apparatus and method for forming a deposited film by means of plasma CVD
01/17/2002US20020006468 Method for forming a copper film on a substrate
01/17/2002US20020005442 Nozzle plate member for supplying fluids in dispersed manner and manufacturing method of the same
01/17/2002US20020005253 Modular device of tubular plasma source
01/17/2002US20020005171 Foaming mixture; pressurization
01/17/2002US20020005170 Method of forming diamond film and film-forming apparatus
01/17/2002US20020005167 Substrate processing apparatus
01/17/2002US20020005159 Method of producing thin semiconductor film and apparatus therefor
01/17/2002DE10031327A1 Cutter insert used for cutting tools consists of hard metal, cermet, ceramic or steel base body and a lubricant layer made of a metal sulfide
01/16/2002EP1172867A2 Method for producing P-Type Gallium Nitride-Based compound semiconductor, method for producing Gallium Nitride-Based compound semiconductor light-emitting device, and gallium nitride-based compound semiconductor light-emitting device
01/16/2002EP1172846A2 Method of plasma depositing a low dielecric constant insulating film on a copper surface
01/16/2002EP1172845A2 Method for treating dielectric layers with low dielectric constant to reduce oxygen diffusion
01/16/2002EP1172843A2 Material handling system and methods for a multichamber plasma treatment system
01/16/2002EP1172458A2 Components peripheral to the pedestal in the gas flow path within a chemical vapor deposition chamber
01/16/2002EP1172457A1 Thin film formation method
01/16/2002EP1172456A1 Lock for vacuum chamber
01/16/2002EP1171907A1 Method of performing plasma warm-up on semiconductor wafers
01/16/2002EP1171900A1 Large area atmospheric-pressure plasma jet
01/16/2002EP1171645A1 Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor
01/16/2002EP1171644A1 Method and apparatus for controlling polymerized teos build-up in vacuum pump lines
01/16/2002EP1171245A2 Coating medical devices using air suspension
01/16/2002EP0763148B1 Reactor and process for coating flat substrates
01/16/2002CN1078014C Semiconductor device and process for fabricating same
01/15/2002US6339023 Multistep cvd from a mixed gas containing tungsten hexafluoride and silane; in third step adding hydrogen to gas mix
01/15/2002US6339009 Method of manufacturing capacitor of semiconductor device
01/15/2002US6338894 Coated cemented carbide cutting tool member and process for producing the same
01/15/2002US6338882 Multilayer element with light blockers
01/15/2002US6338881 Diamond-like coating and method of making same
01/15/2002US6338880 Chemical vapor deposition process for depositing titanium nitride films from an organometallic compound
01/15/2002US6338876 Priming with acrylic acid primer, hydrofluoric acid and organic reducing agent with nitrate and metal on aluminum
01/15/2002US6338874 Vapor deposition on a support in a chamber on a silicon film
01/15/2002US6338873 Vapor deposition group ii metal film using
01/15/2002US6338872 Film forming method
01/15/2002US6338870 Lamination packaging with silicon oxide coating on plastic substrate
01/15/2002US6338759 Metal organic chemical vapor deposition apparatus and deposition method
01/15/2002US6338313 System for the plasma treatment of large area substrates
01/15/2002CA2119561C Apparatus for rapid plasma treatments and method
01/10/2002WO2002003474A2 N-type nitride semiconductor laminate and semiconductor device using same
01/10/2002WO2002003455A2 Highly conformal titanium nitride deposition process for high aspect ratio structures