Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
02/2002
02/13/2002EP1179843A2 Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition
02/13/2002EP1179838A2 Deposition of tungsten films from W(CO)6
02/13/2002EP1179837A2 Transistor structure comprising doped zirconia, or zirconia-like dielectic film
02/13/2002EP1179835A2 Improved slit valve door and method of assembling
02/13/2002EP1179834A2 Plasma processing apparatus and performance validation system therefor
02/13/2002EP1179729A1 Process for real time control of the making of thin film structure through ellipsometric measurement
02/13/2002EP1179381A2 Surface treatment apparatus
02/13/2002EP1178873A1 Superhard material article of manufacture
02/13/2002EP0910685B1 Coated cutting insert
02/13/2002EP0874919B1 Coated turning insert and method of making it
02/13/2002EP0870073B1 Coated cutting insert and method of making it
02/13/2002CN2476564Y Multifunction combined nanometer material generator
02/13/2002CN1335805A Aerogel substrate and method for preparing the same
02/13/2002CN1335640A Method for producing thermal plate and semi-conductor device
02/13/2002CN1335259A Process for purifying ammonia
02/12/2002USRE37546 Reactor and method of processing a semiconductor substrate
02/12/2002US6346915 Plasma processing method and apparatus
02/12/2002US6346747 Method for fabricating a thermally stable diamond-like carbon film as an intralevel or interlevel dielectric in a semiconductor device and device made
02/12/2002US6346487 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer
02/12/2002US6346483 Film forming method and film formed by the method
02/12/2002US6346481 Polishing sharp corners of heater; forming protective coating; high temperature vapor depositing film on heated substrate; corrosion resistance
02/12/2002US6346478 Method of forming a copper wiring in a semiconductor device
02/12/2002US6346477 Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt
02/12/2002US6346425 Vapor-phase processing method capable of eliminating particle formation
02/12/2002US6346304 Density of foreign body, exposure
02/12/2002US6346303 Process for synthesizing one-dimensional nanosubstances by electron cyclotron resonance chemical vapor deposition
02/12/2002US6346302 Silica film on silicon
02/12/2002US6346294 Coating substrates with vapor and condensation, roughness
02/12/2002US6346290 Organic polymer on substrate, delivering an initiator, polymerization and screening
02/12/2002US6345642 Method and apparatus for removing processing liquid from a processing liquid path
02/12/2002US6345589 Formed under plasma conditions in which high and low frequency rf power is employed to generate the plasma.
02/12/2002CA2354952A1 A supported metal membrane, a process for its preparation and use
02/07/2002WO2002011204A1 Multiphase low dielectric constant material and method of deposition
02/07/2002WO2002011190A2 Precursors for incorporating nitrogen into a dielectric layer
02/07/2002WO2002010475A1 Ring-shaped high-density plasma source and method
02/07/2002WO2002010474A1 Plasma coating method
02/07/2002WO2002010473A1 Barrier coating
02/07/2002WO2002010472A1 Method for forming film
02/07/2002WO2002009891A1 Plasma deposited barrier coating comprising an interface layer, method for obtaining same and container coated therewith
02/07/2002WO2001088220A8 System for precision control of the position of an atmospheric plasma jet
02/07/2002WO2001080286A3 Deposited thin films and their use in separation and sarcrificial layer applications
02/07/2002WO2001075189A3 Cleaning of a plasma processing system silicon roof
02/07/2002WO2001065895A3 Electrically controlled plasma uniformity in a high density plasma source
02/07/2002WO2001057289B1 Device and method for depositing one or more layers onto a substrate
02/07/2002WO2001045134A3 Method and apparatus for producing uniform process rates
02/07/2002US20020016085 Method and apparatus for treating low k dielectric layers to reduce diffusion
02/07/2002US20020016084 Chemical vapor deposition of a precursor comprised of one or more N-Si chemical bonds such as trisilylamine, or a mixture comprised of a N-containing chemical precursor and a Si-containing chemical precursor
02/07/2002US20020016069 Method of forming substrate
02/07/2002US20020016068 Method and its apparatus for detecting floating particles in a plasma processing chamber and an apparatus for processing a semiconductor device
02/07/2002US20020016065 Metal complexes with chelating C-, N-donor ligands for forming metal-containing films
02/07/2002US20020016045 Method for forming capacitor of semiconductor device
02/07/2002US20020016044 Method of producing doped polysilicon layers and polysilicon layered structrues and method of structuring layers and layered structures which comprise polysilicon layers
02/07/2002US20020016037 Method for manufacturing capacitor in semiconductor device
02/07/2002US20020016026 Method and apparatus for manufacturing active matrix device including top gate type TFT
02/07/2002US20020015855 System and method for depositing high dielectric constant materials and compatible conductive materials
02/07/2002US20020015802 Method and apparatus for forming deposited film
02/07/2002US20020015797 Chemical vapor deposition and powder formation using thermal spray with near supercritical and supercritical fluid solutions
02/07/2002US20020015793 Method of manufacturing metallic film consisting of giant single crystal grains
02/07/2002US20020015791 Vapor deposition of titanium nitride from organotitanium compound
02/07/2002US20020015790 Source reagent compositions for CVD formation of high dielectric constant and ferroelectric metal oxide thin films and method of using same
02/07/2002US20020015789 Vapor deposition using organometallic compound; integrated circuit; film
02/07/2002US20020015466 Plasma facing components of nuclear fusion reactors employing tungsten materials
02/07/2002US20020014700 Method and system for forming film, semiconductor device and fabrication method thereof
02/07/2002US20020014667 Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
02/07/2002US20020014644 Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
02/07/2002US20020014597 Appartus for surface modification of polymer, metal and ceramic materials using ion beam
02/07/2002US20020014483 Batch type heat treatment system, method for controlling same, and heat treatment method
02/07/2002US20020014471 Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
02/07/2002US20020014325 Mechanical, electrochemical polishing pretreatment; vaporization of organosilicon compound and hydrocarbon
02/07/2002US20020014311 Substrate processing apparatus and method
02/07/2002US20020014263 Method of manufacturing a non-single-crystal thin film solar cell
02/07/2002US20020014207 Vaporizing reactant liquids for chemical vapor deposition film processing
02/07/2002US20020014205 Chemical vapor deposition method for depositing silicide and apparatus for performing the same
02/07/2002US20020014204 Heater block having catalyst spray means
02/07/2002US20020014203 View port of a chemical vapor deposition device for manufacturing semiconductor devices
02/07/2002US20020014198 Silicon carbide and method for producing the same
02/07/2002US20020014197 Chemical vapor deposition system for polycrystalline silicon rod production
02/07/2002US20020014013 Knife
02/07/2002DE10035177A1 Plasma treatment method for hollow body internal surface uses partial discharge within hollow space in electrical AC field
02/07/2002DE10017120C1 Surface exposure device for supporting annular object in material or energy particle stream uses fixing hoop for suspension of object attached to rotatable bolt
02/07/2002CA2416521A1 Plasma coating method
02/07/2002CA2416518A1 Plasma deposited barrier coating comprising an interface layer, method for obtaining same and container coated therewith
02/07/2002CA2416515A1 Barrier coating
02/06/2002EP1178528A2 Wafer pretreatment to decrease the deposition rate of silicon dioxide on silicon nitride in comparison to its deposition rate on a silicon substrate
02/06/2002EP1178133A2 Method of extending life of a recyclable process kit
02/06/2002EP1178132A2 SiC material and method for manufacturing same
02/06/2002EP1178131A1 Chemical vapor deposition of ruthemium films
02/06/2002EP1178128A1 Method of forming chromium coated copper for printed circuit boards
02/06/2002EP1177156A1 Highly tetrahedral amorphous carbon coating on glass
02/06/2002EP1177112A1 Remote plasma generator
02/06/2002EP1064418B1 Apparatus for moving exhaust tube of barrel reactor
02/06/2002EP1012358B1 Inflatable elastomeric element for rapid thermal processing (rtp) system
02/06/2002EP0987966B1 Decorative stone
02/06/2002EP0912775B1 Process for coating the interior wall of a container
02/06/2002EP0896640B1 Diamond-like nanocomposite compositions
02/06/2002CN1334962A Reduced degradation of metal oxide ceramic due to diffusion of mobile matter therefrom
02/06/2002CN1334885A Large area plasma source
02/06/2002CN1334234A Method of horizontal growth of carbon nanotube and field effect transistor using carbon nanotube
02/05/2002US6344631 Substrate support assembly and processing apparatus
02/05/2002US6344422 Method of depositing a BSG layer