Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
02/2002
02/21/2002WO2002014569A2 Chromium-containing cemented tungsten carbide body
02/21/2002WO2002014568A2 Chromium-containing cemented carbide body having a surface zone of binder enrichment
02/21/2002WO2001086034A3 Modified susceptor for use in chemical vapor deposition process
02/21/2002WO2001080291B1 Methods and apparatus for thermally processing wafers
02/21/2002WO2001073146A3 Cemented carbide tool and method of making
02/21/2002WO2001068271A8 Controlling surface chemistry on solid substrates
02/21/2002WO2000066506A9 Highly tetrahedral amorphous carbon coating on glass
02/21/2002US20020022365 Method and apparatus for wiring, wire, and integrated circuit
02/21/2002US20020022349 Semiconductor thin-film formation process, and amorphous silicon solar-cell device
02/21/2002US20020022347 Doping source gas, etching gas, and reducing gas to produce smooth uniform layer of silicon/germanium over semiconductor substrate
02/21/2002US20020022283 Apparatus for conditioning the atmosphere in a chamber
02/21/2002US20020022278 Capacitor utilizing C-axis oriented lead germanate film
02/21/2002US20020022210 Wafer treatment chamber having thermal reflector
02/21/2002US20020022139 Applying radio frequency; durability; waterproofing; ink repellents
02/21/2002US20020022137 Plastic overcoated with iridium film
02/21/2002US20020022129 Friction resistance; wear resistance; mixture of hydrocarbon and metal oxide
02/21/2002US20020022089 Method of forming a MOCVD-TiN thin film
02/21/2002US20020022088 Purified silicon production system
02/21/2002US20020022087 Mixing organometallic compound gases
02/21/2002US20020021545 Electrostatic chucking device and manufacturing method thereof
02/21/2002US20020021542 Lock for vacuum chamber
02/21/2002US20020020869 Semiconductor device incorporated therein high K capacitor dielectric and method for the manufacture thereof
02/21/2002US20020020767 Showerhead and liquid raw material supply apparatus using the same
02/21/2002US20020020499 Inductively coupled RF plasma reactor and plasma chamber enclosure structure therefor
02/21/2002US20020020498 Plasma processing apparatus and plasma processing method
02/21/2002US20020020496 Substrate treatment apparatus
02/21/2002US20020020429 Systems and methods for remote plasma clean
02/21/2002US20020020358 Method and apparatus for improving film deposition uniformity on a substrate
02/21/2002US20020020353 Gas panel
02/21/2002US20020020344 Semiconductor manufacturing method, substrate processing method, and semiconductor manufacturing apparatus
02/21/2002US20020020298 Supported metal membrane, a process for its preparation and use
02/21/2002US20020020189 Temperature adjustment apparatus
02/21/2002DE10063717C1 Chemical vapor deposition of thin film e.g. dielectric material, metal (alloy) or metal nitride or silicide on semiconductor, especially for filling deep trench capacitors and contact holes, is carried out in presence of nitroxyl radical
02/20/2002EP1180793A2 Electrostatic chuck and manufacturing method thereof
02/20/2002EP1180791A1 Method for forming a nitride layer on a semiconductor substrate
02/20/2002EP1180785A2 Means for directing a flow of gas in a substrate processing chamber
02/20/2002EP1180554A2 Method of depositing organosilicate layers
02/20/2002EP1180553A1 CVD process for depositing copper on a barrier layer
02/20/2002EP1180429A2 Lens plasma coating system
02/20/2002EP1180392A1 Supported metal membrane, method for the production and the use thereof
02/20/2002EP1099007B1 Susceptor for barrel reactor
02/20/2002EP1076732B1 Injector for reactor
02/20/2002EP1017874B1 Colorless diamond-like carbon coatings
02/20/2002CN1079577C Vertical rack used for semiconductor round chip
02/19/2002US6348725 Plasma processes for depositing low dielectric constant films
02/19/2002US6348705 Low temperature process for high density thin film integrated capacitors and amorphously frustrated ferroelectric materials therefor
02/19/2002US6348421 Dielectric gap fill process that effectively reduces capacitance between narrow metal lines using HDP-CVD
02/19/2002US6348420 Situ dielectric stacks
02/19/2002US6348412 Organometallic compound mixtures in chemical vapor deposition
02/19/2002US6348376 Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same
02/19/2002US6348238 Thin film fabrication method and thin film fabrication apparatus
02/19/2002US6348237 Jet plasma process for deposition of coatings
02/19/2002US6348099 Methods and apparatus for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
02/19/2002US6348096 Method for manufacturing group III-V compound semiconductors
02/19/2002US6347918 Inflatable slit/gate valve
02/19/2002US6347749 Semiconductor processing reactor controllable gas jet assembly
02/19/2002US6347636 Methods and apparatus for gettering fluorine from chamber material surfaces
02/19/2002US6347602 Plasma processing apparatus
02/19/2002US6347601 Film forming apparatus
02/19/2002CA2198453C Metalorganic compounds
02/19/2002CA2076029C Method of depositing a silicon oxide film bonded to a polymer substrate
02/14/2002WO2002013275A1 Electronic component and method for producing an electronic component
02/14/2002WO2002013251A1 Vapor phase deposition method for metal oxide dielectric film
02/14/2002WO2002013249A1 Radial antenna and plasma processing apparatus comprising the same
02/14/2002WO2002013246A1 Process for growing a magnesium oxide film on a silicon (100) substrate coated with a cubic silicon carbide buffer layer
02/14/2002WO2002013239A2 Heater for jmf type wafers
02/14/2002WO2002012972A2 Direct temperature control for a component of a substrate processing chamber
02/14/2002WO2002012589A2 Barrier layer structure for copper metallization and method of forming the structure
02/14/2002WO2002012588A1 Gas collector for epitaxial reactor
02/14/2002WO2002012587A2 Processing apparatus and cleaning method
02/14/2002WO2002012585A2 Processing apparatus and cleaning method
02/14/2002WO2002011980A1 Electronic and optical materials
02/14/2002WO2002011912A1 Method and device for preventing solid product from adhering to inner surface of exhaust gas pipe and exhaust gas treatment device with the device
02/14/2002WO2001073820A3 Flow control of process gas in semiconductor manufacturing
02/14/2002WO2001066832A3 Graded thin films
02/14/2002WO2001061068A3 Tumble coater
02/14/2002WO2001055489A3 Protective and/or diffusion barrier layer
02/14/2002US20020019149 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process
02/14/2002US20020019147 Plasma CVD method
02/14/2002US20020019144 Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby
02/14/2002US20020019131 Manufacture of semiconductor device with copper wiring
02/14/2002US20020019116 To deposit a multi-component layer on a semiconductor substrate; for example a dielectric layer from a gaseous titanium organometallic precursor, reactive silane-based gas and gaseous oxidant
02/14/2002US20020019093 Barium strontium titanate, (Sr,Ba)TiO3 (BST) by supplying BST sources into a chamber; and inducing textured growth of the film over the substrate in a uniform desired crystal orientation; metal-organic chemical vapor deposition (MOCVD)
02/14/2002US20020018921 Multilayer coating
02/14/2002US20020018904 Ferroelectric
02/14/2002US20020018862 Method of annealing large area glass substrates
02/14/2002US20020018849 Vapor deposition using basic catalyst
02/14/2002US20020018737 Removal waste gases from semiconductors by scrubbing, oxidation
02/14/2002US20020018025 Power supply antenna and power supply method
02/14/2002US20020017724 Chemical vapor deposition of titanium
02/14/2002US20020017694 Electrostatic attraction mechanism, surface processing method and surface processing device
02/14/2002US20020017377 Heating and cooling apparatus, and vacuum processing apparatus equipped with this apparatus
02/14/2002US20020017363 Substrate processing apparatus and substrate processing method
02/14/2002US20020017246 Gas phase growth system, method of operating the system, and vaporizer for the system
02/14/2002US20020017244 Gas collector for epitaxial reactor
02/14/2002US20020017243 Showerhead in chemical-enhanced chemical vapor deposition equipment
02/14/2002US20020017242 Inner tube for CVD apparatus
02/14/2002US20020017241 Semiconductor-manufacturing device
02/14/2002DE10039327A1 Elektronisches Bauelement und Herstellungsverfahren für elektronisches Bauelement Electronic device and manufacturing method of electronic component
02/13/2002EP1179859A2 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device