Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
03/2002
03/07/2002US20020028300 Manufacturing method of optical waveguide
03/07/2002US20020028290 Rotation in gas flow; forming polycrystalline silicon
03/07/2002US20020028286 Method for depositing a protective film on a data recording disk, and apparatus for depositing a thin film on a data recording disk
03/07/2002US20020026984 By which a predetermined number of flat workpieces may be parallel processed, whereby the number of operating cycles for such treatment is minimalized so as to reach optimal short throughput times with optimal low handling
03/07/2002US20020026983 Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
03/07/2002US20020026951 Method and apparatus for removing processing liquid from a processing liquid delivery line
03/07/2002US20020026900 Depolymerization of starch particles, heating, acidolysis and spray drying to form starch hydrolzylates having heat and enzyme resistance, used for tablets, dietery fiber, fat substitutes and antiicing agents
03/07/2002US20020026899 Apparatus and method for coating substrates with vacuum depositable materials
03/07/2002US20020026892 Impurity doping method for semiconductor as well as system therefor and semiconductor materials prepared thereby
03/07/2002DE19635736C2 Diamantähnliche Beschichtung Diamond-like coating
03/07/2002CA2417236A1 Method of forming a pre-metal dielectric film on a semiconductor substrate
03/06/2002EP1184489A2 Impurity doping method for semiconductor as well as system therefor and semiconductor materials prepared thereby
03/06/2002EP1184485A1 MOCVD precursors in mixed solvents
03/06/2002EP1184365A2 Novel group IV metal precursors and chemical vapor deposition method using thereof
03/06/2002EP1183719A1 Scalable lead zirconium titanate (pzt) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
03/06/2002EP1183716A1 Substrate support for plasma processing
03/06/2002EP1183406A1 Sequential chemical vapor deposition
03/06/2002EP1183405A1 Method for vacuum treatment of workpieces and vacuum treatment facility
03/06/2002EP0951394B1 Passivation of ink-jet printheads
03/06/2002CN1338782A Method for forming films
03/05/2002US6353201 Discharge electrode, RF plasma generation apparatus using the same, and power supply method
03/05/2002US6352945 Introducing silicon compound having two alkoxy groups or less with no additive gas into reaction chamber for plasma chemical vapor deposition containing semiconductor substrate, activating plasma polymerization to form silicone film
03/05/2002US6352944 Positioning semiconductor substrate within chemical vapor deposition reactor, feeding ammonia and trialkylaluminum compound to reactor at specified temperature and pressure to deposit layer comprising amorphous aluminum nitride
03/05/2002US6352910 Method of depositing amorphous silicon based films having controlled conductivity
03/05/2002US6352865 Method for fabricating a capacitor for a semiconductor device
03/05/2002US6352636 Electrochemical system and process for stripping metallic coatings
03/05/2002US6352611 Ceramic composition for an apparatus and method for processing a substrate
03/05/2002US6352594 Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors
03/05/2002US6352593 Mini-batch process chamber
03/05/2002US6352592 Free floating shield and semiconductor processing system
03/05/2002US6352591 Methods and apparatus for shallow trench isolation
03/05/2002US6352406 Method for assessing quality of a coating process and assembly therefor
03/05/2002US6352244 Auxiliary gasline-heating unit in chemical vapor deposition
03/05/2002US6352050 Remote plasma mixer
02/2002
02/28/2002WO2002017374A1 Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof
02/28/2002WO2002017368A1 Semiconductor polysilicon component and method of manufacture thereof
02/28/2002WO2002017359A2 High carrier concentration p-type transparent conducting oxide films
02/28/2002WO2002016679A1 Polycrystalline semiconductor material and method of manufacture thereof
02/28/2002WO2002016012A1 Method for purifying fluorinated gas effluents
02/28/2002WO2001066834A3 Chemical vapor deposition process for fabricating layered superlattice materials
02/28/2002WO2001055478A3 Method and device for depositing a precursor on a substrate, said precursor being present in liquid form
02/28/2002US20020025693 Method of manufacturing low dielectric film by a vacuum ultraviolet chemical vapor deposition
02/28/2002US20020025684 Etching silicon oxide surface using anhydrous fluorine gas
02/28/2002US20020025660 Growth of epitaxial semiconductor material with improved crystallographic properties
02/28/2002US20020025657 Wafer processing in a chamber with novel gas inlets
02/28/2002US20020025651 Semiconductor device manufacturing method and semiconductor manufacturing apparatus
02/28/2002US20020025646 Method for forming capacitor of semiconductor device
02/28/2002US20020025453 Perovskite mixed oxide
02/28/2002US20020025389 Lens plasma coating system
02/28/2002US20020025378 Exposing the primary carbides embedded in a steel matrix by at least one of uncovering and cutting, forming recess in the surface for one of detaching or removing the exposed primary carabides, depositing a hard material coating on the surface
02/28/2002US20020025377 Method of producing a ferroelectric solid-state layer using an auxiliary substance
02/28/2002US20020025374 Parallel and selective growth method of carbon nanotube on the substrates for electronic-spintronic device applications
02/28/2002US20020024118 Semiconductor device having a capacitor and a fabrication process thereof
02/28/2002US20020024108 Novel non-crystalline oxides for use in microelectronic, optical, and other applications
02/28/2002US20020024072 Ferroelastic lead germanate thin film and deposition method
02/28/2002US20020023906 Method of producing through-hole in aromatic polyimide film
02/28/2002US20020023589 Plasma generating apparatus
02/28/2002US20020023588 Substrate holder, a blow inlet for source gas, exhaust outlets for source gas; where direction of flow of source gas relative the substrate is varied with time using valves; barium strontium titanate films
02/28/2002DE10136682A1 Selektives Epitaxieverfahren für Halbleiterbauelemente Selective epitaxy for semiconductor devices
02/28/2002DE10134181A1 P-type nitride semiconductor manufacturing method for light emitting and receiving elements, involves cooling substrate of nitride semiconductor layer in environment of hydrogen
02/28/2002DE10120184A1 Herstellung einer Halbleitervorrichtung mit Kupferverdrahtung Manufacturing a semiconductor device having copper wiring
02/28/2002DE10039596A1 Metal membrane for removing hydrogen from gas mixtures contains metal membrane formed on supporting surface of porous membrane carrier
02/28/2002DE10038887A1 Production of a silicon nitride layer used in the production of a semiconductor device comprises reacting silicon wafers with ammonia gas in two separate chambers
02/28/2002DE10027427A1 Production of a substrate used in the production of heat sinks comprises depositing a polycrystalline diamond layer in the gas phase containing activated carbon using coating parameters
02/27/2002EP1182276A2 Process for the production of a ferroelectric solid layer using an additive
02/27/2002EP1182275A2 Method of forming an interlayer insulating film
02/27/2002EP1182274A1 Coated hard metal cutting tool and its fabrication method
02/27/2002EP1182273A2 Gas chemistry cycling to achieve high aspect ratio gapfill with hdp-cvd
02/27/2002EP1182271A2 Apparatus and method for coating substrate
02/27/2002EP1181095A1 The surface modification of solid supports through the thermal decomposition and functionalization of silanes
02/27/2002CN1338007A Indium source reagent compositions
02/27/2002CN1337736A Method for producing semiconductor integrated circuit device
02/27/2002CN1079843C Deposited film forming apparatus and electrode for use in it
02/26/2002US6351036 Electronic devices with a barrier film and process for making same
02/26/2002US6350961 Method and device for improving surfaces
02/26/2002US6350708 Silicon nitride deposition method
02/26/2002US6350697 Method of cleaning and conditioning plasma reaction chamber
02/26/2002US6350686 Vapor deposition multi-metallic mixture of metalloamides; alloying, boriding, siliciding, oxidation, nitriding, and/or sulfiding; controlled stoichiometry; semiconductors
02/26/2002US6350648 Formation of conductive rugged silicon
02/26/2002US6350644 Ferroelectric thin-film device and method for producing the same
02/26/2002US6350643 Vapor deposition; annealing to ferroelectric layer; semiconductors, integrated circuits
02/26/2002US6350510 Cermet or ceramic substrate with multilayer coating and covering with hafnium or zirconium carbides, nitrides or carbonitrides formed by vapor deposition
02/26/2002US6350497 Plasma processing method
02/26/2002US6350489 Deposited-film forming process and deposited-film forming apparatus
02/26/2002US6350488 Forming insulating layer over substrate, etching and growing carbon
02/26/2002US6350320 Heater for processing chamber
02/26/2002US6350317 Linear drive system for use in a plasma processing system
02/26/2002US6350191 Surface functionalized diamond crystals and methods for producing same
02/26/2002US6349887 Liquid delivery system
02/26/2002US6349744 Manifold for modular gas box system
02/26/2002US6349669 Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction
02/26/2002US6349668 Method and apparatus for thin film deposition on large area substrates
02/26/2002US6349454 Method of making thin film resonator apparatus
02/21/2002WO2002015649A2 Close coupled match structure for rf drive electrode
02/21/2002WO2002015275A1 Method for manufacturing semiconductor device
02/21/2002WO2002015255A1 System and method for cleaning semiconductor fabrication equipment parts
02/21/2002WO2002015243A1 Device and method for processing substrate
02/21/2002WO2002015239A2 Dispersion plate for flowing vaporized compounds used in chemical vapor deposition of films onto semiconductor surfaces
02/21/2002WO2002014579A1 Method for depositing a glass layer on a substrate
02/21/2002WO2002014578A2 Chromium-containing cemented tungsten carbide coated cutting insert