Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
03/2002
03/19/2002US6358361 Plasma processor
03/19/2002US6358327 Method for endpoint detection using throttle valve position
03/19/2002US6358324 Microwave plasma processing apparatus having a vacuum pump located under a susceptor
03/19/2002US6358323 Method and apparatus for improved control of process and purge material in a substrate processing system
03/19/2002US6357385 Plasma device
03/15/2002CA2357324A1 Continuous feed coater
03/14/2002WO2002021610A1 Plasma encapsulation for electronic and microelectronic components such as oleds
03/14/2002WO2002021590A2 Electrostatic chuck with porous regions
03/14/2002WO2002020881A2 Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor
03/14/2002WO2002020871A1 Plasma boat
03/14/2002WO2002020870A1 Chemical vapor deposition of tantalum oxide using oxygen-free liquid precursors
03/14/2002WO2002020864A2 System and method for depositing high dielectric constant materials and compatible conductive materials
03/14/2002WO2002020420A2 Coated article including a dlc inclusive layer(s) and a layer(s) deposited using siloxyne gas, and corresponding method
03/14/2002WO2002020282A1 Method for providing a semitransparent metallic aspect to cosmetic case or compact components and resulting components
03/14/2002WO2001090436A3 Mobile plating system and method
03/14/2002WO2001045135A3 Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates
03/14/2002WO2000065126A9 Cvd tantalum nitride plug formation from tantalum halide precursors
03/14/2002US20020032073 Highly durable and abrasion resistant composite diamond-like carbon decorative coatings with controllable color for metal substrates
03/14/2002US20020031846 Method and device for manufacturing ceramics, semiconductor device and piezoelectric device
03/14/2002US20020031687 Carbide coated steel articles and method of making them
03/14/2002US20020031655 Process for the production of improved boron coatings
03/14/2002US20020031618 Sequential chemical vapor deposition
03/14/2002US20020031617 Plasma processing apparatus and method with controlled biasing functions
03/14/2002US20020030246 Structure and method for fabricating semiconductor structures and devices not lattice matched to the substrate
03/14/2002US20020030047 Heat treatment apparatus having a thin light-transmitting window
03/14/2002US20020030038 System for precision control of the position of an atmospheric plasma
03/14/2002US20020029955 Photocatalysts are semiconductors such as titanium dioxide and are coated onto a substrate by flame aerosol coating
03/14/2002US20020029850 System for the plasma treatment of large area substrates
03/14/2002US20020029818 Vacuum processing methods
03/14/2002US20020029791 Processing apparatus having particle counter and cleaning device, cleaning method, cleanliness diagnosis method and semiconductor fabricating apparatus using the same
03/14/2002US20020029748 Shower head structure and cleaning method thereof
03/14/2002US20020029747 Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
03/14/2002US20020029745 Worktable device and plasma processing apparatus for semiconductor process
03/14/2002DE10043601A1 Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten Apparatus and method for depositing in particular crystalline layers on in particular crystalline substrates
03/14/2002DE10043600A1 Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren, insbesondere ebenfalls kristallinen Substraten Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates
03/14/2002DE10043599A1 Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren insbesondere ebenfalls kristalliner Substraten Device for depositing in particular crystalline layers on in particular also one or more crystalline substrates
03/14/2002DE10043597A1 Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf insbesonder e kristallinen Substraten Device for depositing in particular crystalline layers on crystalline substrates insbesonder e
03/14/2002DE10042098A1 Gasversorgung für Additive Lithographie Gas supply for additives lithography
03/14/2002DE10041698A1 Verfahren zur Herstellung einer ferroelektrischen Festkörperschicht unter Verwendung eines Hilfsstoffes A method of manufacturing a ferroelectric solid state layer using an excipient
03/13/2002EP1187188A1 Method of processing wafer
03/13/2002EP1187187A1 Plasma processing apparatus
03/13/2002EP1187183A1 Method of manufacturing semiconductor device and manufacturing line thereof
03/13/2002EP1186685A2 Method for forming silicon carbide films
03/13/2002EP1186025A1 Tungsten-filled deep trenches
03/13/2002EP1186005A1 Multi-zone resistive heater
03/13/2002EP1185727A1 Sequential hydride vapor-phase epitaxy
03/13/2002EP1185723A1 Utilization of sih4, soak and purge in deposition processes
03/13/2002EP1185722A1 Pecvd of tan films from tantalum halide precursors
03/13/2002EP1185721A1 A doped diamond-like carbon coating
03/13/2002EP1185538A1 Copper source reagent compositions, and method of making and using same for microelectronic device structures
03/13/2002CN1339617A Chemical gas phase deposit method for non-crystalline silicon and forming film
03/12/2002US6356071 Self-contained position detection apparatus
03/12/2002US6355909 Method and apparatus for thermal processing of semiconductor substrates
03/12/2002US6355902 Plasma film forming method and plasma film forming apparatus
03/12/2002US6355582 Silicon nitride film formation method
03/12/2002US6355581 Placing substrate having stepped upper surface in reaction chamber, inducing reaction in gaseous mixture comprising silicon and oxygen sources, carrier gas and halide-containing inorganic gas additive to deposit silicon oxide film
03/12/2002US6355577 System to reduce particulate contamination
03/12/2002US6355574 Method and device for treating a semiconductor surface
03/12/2002US6355573 Plasma processing method and apparatus
03/12/2002US6355571 Method and apparatus for reducing copper oxidation and contamination in a semiconductor device
03/12/2002US6355561 ALD method to improve surface coverage
03/12/2002US6355560 Sputtering titanium layer over surfaces of aperture, chemical vapor depositing titanium nitride over titanium layer, each layer having specified thickness, depositing metal over titanium nitride
03/12/2002US6355545 Method and apparatus for wiring, wire, and integrated circuit
03/12/2002US6355353 Useful as a substrate for an amorphous silicon solar cell
03/12/2002US6355116 Method for renewing diffusion coatings on superalloy substrates
03/12/2002US6355109 Vacuum processing apparatus
03/12/2002US6355108 Film deposition using a finger type shadow frame
03/12/2002US6355107 Compound gas injection system
03/12/2002US6355106 Deposition of copper with increased adhesion
03/12/2002US6355097 Organic titanium compound suitable for MOCVD
03/12/2002US6354241 Heated electrostatic particle trap for in-situ vacuum line cleaning of a substrated processing
03/12/2002US6354109 Process and apparatus for providing a film with a gradient
03/12/2002US6354008 Sliding member, inner and outer blades of an electric shaver and film-forming method
03/12/2002CA2065581C Plasma enhancement apparatus and method for physical vapor deposition
03/07/2002WO2002019411A2 Method of forming a pre-metal dielectric film on a semiconductor substrate
03/07/2002WO2002019403A1 Composite structure for electronic microsystems and method for production of said composite structure
03/07/2002WO2002019390A2 Cleaning of semiconductor process equipment chamber parts using organic solvents
03/07/2002WO2002019380A1 Plasma processing
03/07/2002WO2002019375A1 Device, set and method for carrying a gas or a liquid to a surface through a tube
03/07/2002WO2002019366A2 Cold cathode ion beam deposition apparatus with segregated gas flow
03/07/2002WO2002019363A2 Pre-polycoating of glass substrates
03/07/2002WO2002018680A1 Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
03/07/2002WO2002018679A1 Device for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
03/07/2002WO2002018672A1 Cvd coating device
03/07/2002WO2002018671A1 Substantially pure bulk pyrocarbon and methods of preparation
03/07/2002WO2002018670A2 Cvd reactor with a gas outlet ring made of solid graphite
03/07/2002WO2002018394A1 Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
03/07/2002WO2001093312A3 Method for depositing a selected thickness of an interlevel dielectric material to achieve optimum global planarity on a semiconductor wafer
03/07/2002WO2001073822A3 Visibly marked parts and method for using same
03/07/2002WO2001050510A3 Low thermal budget metal oxide deposition for capacitor structures
03/07/2002US20020028587 Method of manufacturing interlayer dielectric film using vacuum ultraviolet CVD
03/07/2002US20020028584 Covering wires with dielectrics
03/07/2002US20020028570 Control stoichiometry
03/07/2002US20020028567 Film formation method and film formation apparatus
03/07/2002US20020028566 CVD film formation method
03/07/2002US20020028383 Uniformity thin film; oxidation resistance; vapor deposition
03/07/2002US20020028358 Method for manufacturing thin-film magnetic recording medium
03/07/2002US20020028336 Packaging laminate with gas and aroma barrier properties
03/07/2002US20020028322 Mask for the selective growth of a solid, a manufacturing method for the mask, and a method for selectively growing a solid using the mask
03/07/2002US20020028304 Blow molding; carbon coating interiors wall