Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
03/2002
03/28/2002US20020037801 Vapor deposition
03/28/2002US20020037756 Battery-operated wireless-communication apparatus and method
03/28/2002US20020037653 Chamber having improved gas energizer and method
03/28/2002US20020037652 Semiconductor device manufacturing apparatus and method for manufacturing a semiconductor device
03/28/2002US20020037645 Method and apparatus for processing substrates and method for manufacturing a semiconductor device
03/28/2002US20020037635 Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures
03/28/2002US20020037634 Process and apparatus for forming semiconductor thin film
03/28/2002US20020037440 Magnetic recording medium having a magnetic film on a non-magnetic substrate by intercalating an under layer, the proportion of functional groups/100 carbon atoms in a diamond like carbon protective coating composed of carbon exceeds 20%
03/28/2002US20020037374 Applying a supply voltage to the two electrodes, characterized in that supply voltage is an alternating current voltage whose amplitude and frequency are adapted in order to maintain portion of the components of the gas in the excited state
03/28/2002US20020037373 Material deposition
03/28/2002US20020037362 Method of and arrangement for producing a fluorescent layer
03/28/2002US20020037247 Substantially pure bulk pyrocarbon and methods of preparation
03/28/2002US20020037210 Substrate processing apparatus
03/28/2002US20020036343 Semiconductor fabrication device and method for preventing the attachment of extraneous particles
03/28/2002US20020036187 Plasma processing device
03/28/2002US20020036132 Vapor deposition using electrical fields (magnets) for angular distribution of ionized particles
03/28/2002US20020036131 Method of Producing negative electrode for lithium secondary cell
03/28/2002US20020036064 Reactor with heated and textured electrodes and surfaces
03/28/2002US20020035962 Photo-excited gas processing apparatus for semiconductor process
03/28/2002US20020035960 Silicon carbide film and method for manufacturing the same
03/27/2002EP1191582A1 Production method for semiconductor device
03/27/2002EP1191570A2 Performance evaluation method for plasma processing apparatus for continuously maintainning a desired performance level
03/27/2002EP1191569A2 Method for reducing plasma-induced damage
03/27/2002EP1191124A1 Copper source liquid for MOCVD processes and method for the preparation thereof
03/27/2002EP1191123A2 Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers
03/27/2002EP1191122A2 Modified platinum aluminide diffusion coating and CVD coating method
03/27/2002EP1190846A2 Rubber-based composite material and rubber article using the same
03/27/2002EP1190604A1 Apparatus for plasma treatment using capillary electrode discharge plasma shower
03/27/2002EP1190435A1 A plasma reaction chamber component having improved temperature uniformity
03/27/2002EP1190285A1 Method and device for conditioning atmosphere in a process chamber
03/27/2002EP1190122A1 Method and apparatus for epitaxially growing a material on a substrate
03/27/2002EP1190121A1 Truncated susceptor for vapor-phase deposition
03/27/2002EP1190120A1 Compound gas injection system and methods
03/27/2002EP1190111A2 Method of coating ceramics using ccvd
03/27/2002EP1189706A1 Method and apparatus for metal oxide chemical vapor deposition on a substrate surface
03/27/2002EP1189676A1 Organic acid scrubber & methods
03/27/2002EP0778838B1 Formation of a metalorganic compound for growing epitaxial metal or semiconductor layers
03/27/2002EP0770265B1 Method of forming doped bst layers and integrated circuit capacitors comprising magnesium doped bst layers
03/27/2002CN1342216A MT CVD process
03/27/2002CN1342215A Tungsten carbide coatings and method for producing the same
03/27/2002CN1342214A Distributed control system architecture and method for material transport system
03/27/2002CN1342213A Processing chamber for atomic layer deposition processes
03/27/2002CN1342212A Wafer processing reactor having gas flow control system and method
03/27/2002CN1341774A Conductive diamond film for electrode and its preparation method
03/27/2002CN1081683C Epitaxial reactor
03/26/2002US6362494 Semiconductor device and method and apparatus for manufacturing semiconductor device
03/26/2002US6362414 Transparent layered product and glass article using the same
03/26/2002US6362099 Providing a barrier layer having a first surface that is substantially unoxidized; depositing a first copper layer onto the first surface of the barrier layer, wherein the first copper layer is deposited from a precursor
03/26/2002US6362098 Plasma-enhanced chemical vapor deposition (CVD) method to fill a trench in a semiconductor substrate
03/26/2002US6362096 Wafer processing with water vapor pumping
03/26/2002US6361707 Apparatus and methods for upgraded substrate processing system with microwave plasma source
03/26/2002US6361706 Abatement using water vapor; improved safety; reduced perfluorocarbon emissions
03/26/2002US6361607 Apparatus for controlling polymerized teos build-up in vacuum pump lines
03/26/2002US6361567 Non-irritating antimicrobial coating for medical implants and a process for preparing same
03/26/2002US6361313 Ladder boat for supporting wafers
03/26/2002US6360762 Method for feeding gases for use in semiconductor manufacturing
03/26/2002US6360754 Method of protecting quartz hardware from etching during plasma-enhanced cleaning of a semiconductor processing chamber
03/26/2002US6360686 Plasma reactor with a deposition shield
03/26/2002US6360685 Sub-atmospheric chemical vapor deposition system with dopant bypass
03/21/2002WO2002023964A1 Processing chamber with multi-layer brazed lid
03/21/2002WO2002023614A1 Method for film formation of gate insulator, apparatus for film formation of gate insulator, and cluster tool
03/21/2002WO2002023608A1 Cleaning gasses and etching gases
03/21/2002WO2002023599A1 Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates
03/21/2002WO2002023594A2 Apparatus and method for reducing contamination on thermally processed semiconductor substrates
03/21/2002WO2002023588A2 Capacitively coupled plasma reactor
03/21/2002WO2001082355A3 Method and apparatus for plasma cleaning of workpieces
03/21/2002WO2001074708A3 Method for depositing polycrystalline sige suitable for micromachining and devices obtained thereof
03/21/2002US20020034885 Coating film and method of producing the same
03/21/2002US20020034880 Wherein gas is introduced into a vacuum chamber for treating a substrate to be processed
03/21/2002US20020034862 Method and apparatus for use in manufacturing a semiconductor device
03/21/2002US20020034857 6555395 withdrawn after electronic O.G. published
03/21/2002US20020034645 Effecting high frequency plasma chemical vapor deposition using a source gas comprising a silicon halide (silicon chloride or fluoride) and hydrogen forming a silicon thin film
03/21/2002US20020034595 Substrate processing equipment and method and covering member for use therein
03/21/2002US20020034586 Chemical vapour deposition precursors
03/21/2002US20020034585 Thermally decomposing cyclopentasilane and/or silylcyclopentasilane in the presence of an inert organic medium vapor under atmospheric pressure; efficiency, yield, simplification
03/21/2002US20020034467 Process for purifying ammonia
03/21/2002US20020033533 Interconnect structure for use in an integrated circuit
03/21/2002US20020033497 Haze-free BST films
03/21/2002US20020033381 Susceptor and surface processing method
03/21/2002US20020033377 Replacement of fluorocarbons with hydrogen; decomposition
03/21/2002US20020033274 Low resistance contacts fabricated in high aspect ratio openings by resputtering
03/21/2002US20020033232 Quartz wafer processing chamber
03/21/2002US20020033191 Silicon-type thin-film formation process, silicon-type thin film, and photovoltaic device
03/21/2002US20020033183 Method and apparatus for enhanced chamber cleaning
03/21/2002US20020033136 Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
03/20/2002EP1189261A2 Batch-type heat treatment apparatus and method for controlling it
03/20/2002EP1188847A2 Plasma processing method and apparatus
03/20/2002EP1188504A1 Coated cutting tool
03/20/2002EP1187950A2 Method for making a bowl in thermostructural composite material, resulting bowl and use of same as crucible support
03/20/2002EP1187945A1 Use of a method for the plasma-supported reactive deposition of a material
03/20/2002CN1341158A Parts for vacuum film-forming device and vacuum film-forming device using the same and board device thereof
03/19/2002US6359388 Cold cathode ion beam deposition apparatus with segregated gas flow
03/19/2002US6359264 Thermal cycling module
03/19/2002US6359250 RF matching network with distributed outputs
03/19/2002US6359160 Bis(diethylamide)bis(tert-butylimido)molybdenum
03/19/2002US6358863 Metal oxides and poly(para-xylylenes) for use in semiconductor devices; less interference (cross talk) and better reliability; improved thermal properties
03/19/2002US6358573 Mixed frequency CVD process
03/19/2002US6358485 Semiconductor processing exhaust abatement
03/19/2002US6358433 Ceramic compositions
03/19/2002US6358428 Method of etching