Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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03/28/2002 | US20020037801 Vapor deposition |
03/28/2002 | US20020037756 Battery-operated wireless-communication apparatus and method |
03/28/2002 | US20020037653 Chamber having improved gas energizer and method |
03/28/2002 | US20020037652 Semiconductor device manufacturing apparatus and method for manufacturing a semiconductor device |
03/28/2002 | US20020037645 Method and apparatus for processing substrates and method for manufacturing a semiconductor device |
03/28/2002 | US20020037635 Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures |
03/28/2002 | US20020037634 Process and apparatus for forming semiconductor thin film |
03/28/2002 | US20020037440 Magnetic recording medium having a magnetic film on a non-magnetic substrate by intercalating an under layer, the proportion of functional groups/100 carbon atoms in a diamond like carbon protective coating composed of carbon exceeds 20% |
03/28/2002 | US20020037374 Applying a supply voltage to the two electrodes, characterized in that supply voltage is an alternating current voltage whose amplitude and frequency are adapted in order to maintain portion of the components of the gas in the excited state |
03/28/2002 | US20020037373 Material deposition |
03/28/2002 | US20020037362 Method of and arrangement for producing a fluorescent layer |
03/28/2002 | US20020037247 Substantially pure bulk pyrocarbon and methods of preparation |
03/28/2002 | US20020037210 Substrate processing apparatus |
03/28/2002 | US20020036343 Semiconductor fabrication device and method for preventing the attachment of extraneous particles |
03/28/2002 | US20020036187 Plasma processing device |
03/28/2002 | US20020036132 Vapor deposition using electrical fields (magnets) for angular distribution of ionized particles |
03/28/2002 | US20020036131 Method of Producing negative electrode for lithium secondary cell |
03/28/2002 | US20020036064 Reactor with heated and textured electrodes and surfaces |
03/28/2002 | US20020035962 Photo-excited gas processing apparatus for semiconductor process |
03/28/2002 | US20020035960 Silicon carbide film and method for manufacturing the same |
03/27/2002 | EP1191582A1 Production method for semiconductor device |
03/27/2002 | EP1191570A2 Performance evaluation method for plasma processing apparatus for continuously maintainning a desired performance level |
03/27/2002 | EP1191569A2 Method for reducing plasma-induced damage |
03/27/2002 | EP1191124A1 Copper source liquid for MOCVD processes and method for the preparation thereof |
03/27/2002 | EP1191123A2 Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers |
03/27/2002 | EP1191122A2 Modified platinum aluminide diffusion coating and CVD coating method |
03/27/2002 | EP1190846A2 Rubber-based composite material and rubber article using the same |
03/27/2002 | EP1190604A1 Apparatus for plasma treatment using capillary electrode discharge plasma shower |
03/27/2002 | EP1190435A1 A plasma reaction chamber component having improved temperature uniformity |
03/27/2002 | EP1190285A1 Method and device for conditioning atmosphere in a process chamber |
03/27/2002 | EP1190122A1 Method and apparatus for epitaxially growing a material on a substrate |
03/27/2002 | EP1190121A1 Truncated susceptor for vapor-phase deposition |
03/27/2002 | EP1190120A1 Compound gas injection system and methods |
03/27/2002 | EP1190111A2 Method of coating ceramics using ccvd |
03/27/2002 | EP1189706A1 Method and apparatus for metal oxide chemical vapor deposition on a substrate surface |
03/27/2002 | EP1189676A1 Organic acid scrubber & methods |
03/27/2002 | EP0778838B1 Formation of a metalorganic compound for growing epitaxial metal or semiconductor layers |
03/27/2002 | EP0770265B1 Method of forming doped bst layers and integrated circuit capacitors comprising magnesium doped bst layers |
03/27/2002 | CN1342216A MT CVD process |
03/27/2002 | CN1342215A Tungsten carbide coatings and method for producing the same |
03/27/2002 | CN1342214A Distributed control system architecture and method for material transport system |
03/27/2002 | CN1342213A Processing chamber for atomic layer deposition processes |
03/27/2002 | CN1342212A Wafer processing reactor having gas flow control system and method |
03/27/2002 | CN1341774A Conductive diamond film for electrode and its preparation method |
03/27/2002 | CN1081683C Epitaxial reactor |
03/26/2002 | US6362494 Semiconductor device and method and apparatus for manufacturing semiconductor device |
03/26/2002 | US6362414 Transparent layered product and glass article using the same |
03/26/2002 | US6362099 Providing a barrier layer having a first surface that is substantially unoxidized; depositing a first copper layer onto the first surface of the barrier layer, wherein the first copper layer is deposited from a precursor |
03/26/2002 | US6362098 Plasma-enhanced chemical vapor deposition (CVD) method to fill a trench in a semiconductor substrate |
03/26/2002 | US6362096 Wafer processing with water vapor pumping |
03/26/2002 | US6361707 Apparatus and methods for upgraded substrate processing system with microwave plasma source |
03/26/2002 | US6361706 Abatement using water vapor; improved safety; reduced perfluorocarbon emissions |
03/26/2002 | US6361607 Apparatus for controlling polymerized teos build-up in vacuum pump lines |
03/26/2002 | US6361567 Non-irritating antimicrobial coating for medical implants and a process for preparing same |
03/26/2002 | US6361313 Ladder boat for supporting wafers |
03/26/2002 | US6360762 Method for feeding gases for use in semiconductor manufacturing |
03/26/2002 | US6360754 Method of protecting quartz hardware from etching during plasma-enhanced cleaning of a semiconductor processing chamber |
03/26/2002 | US6360686 Plasma reactor with a deposition shield |
03/26/2002 | US6360685 Sub-atmospheric chemical vapor deposition system with dopant bypass |
03/21/2002 | WO2002023964A1 Processing chamber with multi-layer brazed lid |
03/21/2002 | WO2002023614A1 Method for film formation of gate insulator, apparatus for film formation of gate insulator, and cluster tool |
03/21/2002 | WO2002023608A1 Cleaning gasses and etching gases |
03/21/2002 | WO2002023599A1 Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates |
03/21/2002 | WO2002023594A2 Apparatus and method for reducing contamination on thermally processed semiconductor substrates |
03/21/2002 | WO2002023588A2 Capacitively coupled plasma reactor |
03/21/2002 | WO2001082355A3 Method and apparatus for plasma cleaning of workpieces |
03/21/2002 | WO2001074708A3 Method for depositing polycrystalline sige suitable for micromachining and devices obtained thereof |
03/21/2002 | US20020034885 Coating film and method of producing the same |
03/21/2002 | US20020034880 Wherein gas is introduced into a vacuum chamber for treating a substrate to be processed |
03/21/2002 | US20020034862 Method and apparatus for use in manufacturing a semiconductor device |
03/21/2002 | US20020034857 6555395 withdrawn after electronic O.G. published |
03/21/2002 | US20020034645 Effecting high frequency plasma chemical vapor deposition using a source gas comprising a silicon halide (silicon chloride or fluoride) and hydrogen forming a silicon thin film |
03/21/2002 | US20020034595 Substrate processing equipment and method and covering member for use therein |
03/21/2002 | US20020034586 Chemical vapour deposition precursors |
03/21/2002 | US20020034585 Thermally decomposing cyclopentasilane and/or silylcyclopentasilane in the presence of an inert organic medium vapor under atmospheric pressure; efficiency, yield, simplification |
03/21/2002 | US20020034467 Process for purifying ammonia |
03/21/2002 | US20020033533 Interconnect structure for use in an integrated circuit |
03/21/2002 | US20020033497 Haze-free BST films |
03/21/2002 | US20020033381 Susceptor and surface processing method |
03/21/2002 | US20020033377 Replacement of fluorocarbons with hydrogen; decomposition |
03/21/2002 | US20020033274 Low resistance contacts fabricated in high aspect ratio openings by resputtering |
03/21/2002 | US20020033232 Quartz wafer processing chamber |
03/21/2002 | US20020033191 Silicon-type thin-film formation process, silicon-type thin film, and photovoltaic device |
03/21/2002 | US20020033183 Method and apparatus for enhanced chamber cleaning |
03/21/2002 | US20020033136 Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system |
03/20/2002 | EP1189261A2 Batch-type heat treatment apparatus and method for controlling it |
03/20/2002 | EP1188847A2 Plasma processing method and apparatus |
03/20/2002 | EP1188504A1 Coated cutting tool |
03/20/2002 | EP1187950A2 Method for making a bowl in thermostructural composite material, resulting bowl and use of same as crucible support |
03/20/2002 | EP1187945A1 Use of a method for the plasma-supported reactive deposition of a material |
03/20/2002 | CN1341158A Parts for vacuum film-forming device and vacuum film-forming device using the same and board device thereof |
03/19/2002 | US6359388 Cold cathode ion beam deposition apparatus with segregated gas flow |
03/19/2002 | US6359264 Thermal cycling module |
03/19/2002 | US6359250 RF matching network with distributed outputs |
03/19/2002 | US6359160 Bis(diethylamide)bis(tert-butylimido)molybdenum |
03/19/2002 | US6358863 Metal oxides and poly(para-xylylenes) for use in semiconductor devices; less interference (cross talk) and better reliability; improved thermal properties |
03/19/2002 | US6358573 Mixed frequency CVD process |
03/19/2002 | US6358485 Semiconductor processing exhaust abatement |
03/19/2002 | US6358433 Ceramic compositions |
03/19/2002 | US6358428 Method of etching |