Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
04/2002
04/09/2002US6368658 Coating medical devices using air suspension
04/09/2002US6368567 Point-of-use exhaust by-product reactor
04/09/2002US6368452 Plasma treatment apparatus and method of semiconductor processing
04/09/2002US6368450 Processing apparatus
04/09/2002US6368410 Semiconductor processing article
04/09/2002US6368405 Apparatus for growing single crystal silicon and method for forming single crystal silicon layer using the same
04/09/2002US6368404 Induction heated chemical vapor deposition reactor
04/09/2002US6368398 Method of depositing films by using carboxylate complexes
04/09/2002US6368051 Multi-position load lock chamber
04/09/2002US6367415 View port of a chemical vapor deposition device for manufacturing semiconductor devices
04/09/2002US6367412 Porous ceramic liner for a plasma source
04/09/2002US6367411 Plasma CVD apparatus
04/09/2002CA2077205C Titanium carbonitride coated stratified substrate
04/04/2002WO2002027772A1 Heat-treating apparatus and heat-treating method
04/04/2002WO2002027771A1 Semiconductor industry-use silica glass jig and production method therefor
04/04/2002WO2002027078A1 Method for depositing, in particular, crystalline layers, a gas inlet element, and device for carrying out said method
04/04/2002WO2002027064A1 Method and device for depositing especially, organic layers by organic vapor phase deposition
04/04/2002WO2002027063A2 Vapor deposition of oxides, silicates and phosphates
04/04/2002WO2002027061A2 Process chamber lid
04/04/2002WO2002027060A2 Process chamber lid service system
04/04/2002WO2002027059A2 System and method for controlling movement of a workpiece in a thermal processing system
04/04/2002WO2002026435A1 Apparatus and method for controlling temperature uniformity of substrates
04/04/2002WO2002026401A1 Method for deposition of an internal coating in a plastic container
04/04/2002WO2002001615A3 Crystal structure control of polycrystalline silicon in a single wafer chamber
04/04/2002WO2001073157A3 Method and apparatus for reducing contamination in a loadlock
04/04/2002US20020039835 Method of depositing a conformal hydrogen-rich silicon nitride layer onto a patterned structure
04/04/2002US20020039832 Forming an amorphous silicon film where the silicon product and the flow rate of a gas mixture of hydrogen and silicon compound(s) are set to meet a given relation; large area, high conversion efficiency, increased film forming rate
04/04/2002US20020039803 Method for CVD process control for enhancing device performance
04/04/2002US20020039626 Formation of said plasma is performed by applying an RF power and a DC power, and said DC power is applied to an electrode carrying the deposition target object.
04/04/2002US20020039625 Contoured plate or profiler is provided for modifying the distribution.
04/04/2002US20020038870 Nitride-based semiconductor element and method of preparing nitride-based semiconductor
04/04/2002US20020038791 Plasma processing method and apparatus
04/04/2002US20020038692 Plasma Processing apparatus
04/04/2002US20020038690 Electric arc spraying
04/04/2002US20020038689 Reduced and atmospheric pressure process capable epitaxial chamber
04/04/2002US20020038688 Plasma processing apparatus and system, performance validation system and inspection method therefor
04/04/2002US20020038676 Refillable ampule and method re same
04/04/2002US20020038669 Gas-line system for semiconductor-manufacturing apparatus
04/04/2002US20020038665 Substrate treatment process
04/04/2002US20020038632 Plasma treatment method and plasma treatment apparatus
04/04/2002US20020038631 Plasma processing apparatus and method using active matching
04/04/2002US20020038630 Apparatus and method for forming deposited film
04/04/2002US20020038528 Inflatable slit/gate valve
04/04/2002DE10134866A1 Horizontally growing carbon nanotubes for field effect transistors, involves synthesizing carbon nanotubes at exposed surfaces of catalyst pattern
04/04/2002DE10045958A1 Unit introducing gas into and from plasma processing chamber has lines of identical flow resistance connecting between gas connection and chamber
04/04/2002DE10043511A1 Kompositstruktur für elektronische Mikrosysteme sowie Verfahren zur Herstellung der Kompositstruktur The composite structure for electronic microsystems, and process for producing the composite structure
04/03/2002EP1193331A2 Chemical vapor deposition apparatus and chemical vapor deposition method
04/03/2002EP1193327A1 Silica glass apparatus for semiconductor industry and method for producing the same
04/03/2002EP1193326A2 Apparatus for reducing particle residues in a semiconductor processing chamber
04/03/2002EP1193325A1 Process and apparatus for forming semiconductor thin film
04/03/2002EP1193324A2 A method of producing high aspect ratio domes by vapor deposition
04/03/2002EP1192637A1 Method and device for electronic cyclotronic resonance plasma deposit of carbon nanofibre layers in fabric form and resulting fabric layers
04/03/2002EP1192294A1 Chamber for chemical vapour deposition
04/03/2002EP1192293A1 CVD OF INTEGRATED Ta AND TaNx FILMS FROM TANTALUM HALIDE PRECURSORS
04/03/2002EP1192292A1 Plasma treatment of thermal cvd tan films from tantalum halide precursors
04/03/2002EP1192291A1 Device for monitoring intended or unavoidable layer deposits and corresponding method
04/03/2002EP1192050A1 Substrate treatment method
04/03/2002EP1191834A1 Cold-plasma deposition treatment of seeds and other living matter
04/03/2002EP1042529B1 Method for selectively depositing bismuth based ferroelectric films
04/03/2002EP1029107B1 Method for applying a diamond layer on substrates made of sintered metallic carbide
04/03/2002EP1009543A4 Application of diamond-like carbon coatings to cobalt-cemented tungsten carbide components
04/03/2002EP0991792B1 Gas injection disc assembly for cvd applications
04/03/2002EP0953067B1 A process and apparatus for depositing a carbon-rich coating on a moving substrate
04/03/2002EP0888213A4 Diamond film deposition
04/03/2002CN1343266A Truncated susceptor for vapor-phase deposition
04/03/2002CN1082100C Industrial pulse or DC plasma and chemical gas phase deposition equipment for strengthening surface of tool or mould
04/03/2002CN1082099C Process for selective growth of diamond film by nano crystal introduction
04/02/2002US6366346 Method and apparatus for optical detection of effluent composition
04/02/2002US6365921 Low-temperature buffer layer; underlying layer; and gan flattening layer containing a group iv element
04/02/2002US6365528 Providing reactor having a semiconductor substrate mounted on a substrate support; formingfluorine and carbon-containing silicon oxide dielectric material by reacting together: oxidizer and silane compound
04/02/2002US6365527 Method for depositing silicon carbide in semiconductor devices
04/02/2002US6365519 Placing wafers into diffusion furnace, increasing temperature of wafers, introducing aluminum nitride precursor into diffusion furnace, forming layer of aluminum nitride
04/02/2002US6365517 Simultaneously subjecting the semiconductor wafer to titanium chloride (ticl.sub.4), hydrogen and nitrogen; subjecting the semiconductor wafer to plasma to cause deposition of titanium nitride based film, reacting with silane
04/02/2002US6365495 Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature
04/02/2002US6365460 Silicon carbide mass by chemical vapor deposition, and thermally treating the silicon carbide mass under vacuum or in an inert gas
04/02/2002US6365237 Method of making non-planar micro-optical structures
04/02/2002US6365235 Streams of active particles are created, these being directed onto the surface which is to be treated, and caused to interact with the surface
04/02/2002US6365231 Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process
04/02/2002US6365230 Method of manufacturing a diamond film coated cutting tool
04/02/2002US6365225 Ingots; using a consumable, removable, thin wall tubular casing, heating the reaction chamber radiantly, flowing and counterflowing reactant gas, depositing polysilicon directly upon the interior wall of the tubular casing.
04/02/2002US6365063 Plasma reactor having a dual mode RF power application
04/02/2002US6365016 Method and apparatus for arc plasma deposition with evaporation of reagents
04/02/2002US6365015 Method for depositing high density plasma chemical vapor deposition oxide in high aspect ratio gaps
04/02/2002US6365013 Coating method and device
04/02/2002US6364958 Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges
04/02/2002US6364957 Support assembly with thermal expansion compensation
04/02/2002US6364954 High temperature chemical vapor deposition chamber
04/02/2002US6364951 Moisture insensitive electroluminescent phosphor
04/02/2002US6364949 300 mm CVD chamber design for metal-organic thin film deposition
04/02/2002US6363958 Flow control of process gas in semiconductor manufacturing
04/02/2002US6363882 Lower electrode design for higher uniformity
04/02/2002US6363881 Plasma chemical vapor deposition apparatus
04/02/2002US6363624 Apparatus for cleaning a semiconductor process chamber
03/2002
03/28/2002WO2002025713A1 Gas compositions for cleaning the interiors of reactors as well as for etching films of silicon-containing compounds
03/28/2002WO2002025712A1 Heating element cvd device
03/28/2002WO2002025696A2 Reducing deposition of process residues on a surface in a chamber
03/28/2002WO2002025695A2 Tunable focus ring for plasma processing
03/28/2002WO2002025693A1 Method and device for treating surfaces using a glow discharge plasma
03/28/2002WO2002024985A1 Gas inlet mechanism for cvd-method and device
03/28/2002WO2000049198A9 Method and apparatus for controlling polymerized teos build-up in vacuum pump lines